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FDS6681Z

Power MOSFET, P Channel, 30 V, 20 A, 4600 µohm, SOIC, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2
  • MSL: -
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 8Pins
  • Channel Type: P Channel
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 2.5W
  • Transistor Mounting: Surface Mount
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: SOIC
  • Drain Source Voltage Vds: 30V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 20A
  • Drain Source On State Resistance: 4600µohm
  • Gate Source Threshold Voltage Max: 1.8V
Delivery and price
Units per pack 1000
Price 0.922 €
Current stock 10+
Lead time 30 days

Updated at April 1, 2026