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FDPC8014AS
Dual MOSFET, PQFN
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Case Style: PQFN
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 37W
- Drain Source Voltage Vds N Channel: 25V
- Continuous Drain Current Id N Channel: 159A
- Drain Source On State Resistance N Channel: 0.0038ohm
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.24 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## MOSFET – Dual, N-Channel, POWERTRENCH , Power Clip, Asymmetric 25 V ## FDPC8014AS ## **General Description** This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. ## **Features** - Q1: N−Channel - ♦ Max rDS(on) = 3.8 m Q at VGS = 10 V, ID = 20 A - ♦ Max rDS(on) = 4.7 m Q at VGS = 4.5 V, ID = 18 A - Q2: N−Channel ## **www.onsemi.com** **==> picture [125 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> PIN1 PIN1<br>Top Bottom<br>Power Clip 5x6<br>PDFN8 5x6, 1.27P,<br>CASE 483AR<br>**----- End of picture text -----**<br> - ♦ Max rDS(on) = 1.0 m Q at VGS = 10 V, ID = 40 A - ♦ Max rDS(on) = 1.2 m Q at VGS = 4.5 V, ID = 37 A - Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses - MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing ## **MARKING DIAGRAM** **==> picture [42 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> $Y&Z&3&K<br>FDPC<br>8014AS<br>**----- End of picture text -----**<br> - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - Computing - Communications - General Purpose Point of Load ## **PIN DESCRIPTION** |**Pin**|**Name**|**Description**| |---|---|---| |1|HSG|High Side Gate| |2|GR|Gate Return| |3, 4, 9|V+ (HSD)|High Side Drain| |5, 6, 7|SW|Switching Node, Low Side Drain| |8|LSG|Low Side Gate| |10|GND (LSS)|Low Side Source| FDPC8014AS = Specific Device Code $Y = ON semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digits Lot Run Traceability Code **==> picture [105 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> PAD9<br>V+(HSD)<br>HSG LSG<br>GR 2.14 117 SW<br>Siti} PAD10 a<br>x1 lyf irs<br>V+ 31144 GND(LSS) 116 SW<br>V+ <4-44) H|1tJyyidLud11 t=pm1 SW<br>HSG 1} i8 LSG<br>a2<br>GR =42} ‘7r= SW<br>V+ 3} 16 SW<br>V+ ae | re SW<br>**----- End of picture text -----**<br> **==> picture [88 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> N−Channel MOSFET<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 10 of this data sheet. Publication Order Number: **FDPC8014AS/D** **1** © Semiconductor Components Industries, LLC, 2015 **December, 2020 − Rev. 2** **FDPC8014AS** **MOSFET MAXIMUM RATINGS** (TA = 25 ° C, unless otherwise noted) |**MOSFET MAXIMUM RATINGS**|**MOSFET MAXIMUM RATINGS**(TA = 25A = 25= 25°C, unless otherwise noted)|**MOSFET MAXIMUM RATINGS**(TA = 25A = 25= 25°C, unless otherwise noted)|||| |---|---|---|---|---|---| |**Symbol**<br>~~LG~~|**Parameter**<br>~~LG~~||**Q1**<br>~~LG~~|**Q2**<br>~~LG~~|**Unit**<br>~~LG~~| |VDS<br>~~a~~|Drain to Source Voltage||25 (Note 4)|25|V| |VGS<br>~~a~~|Gate to Source Voltage<br>||±12<br>|±12<br>|V| |ID<br>|Drain Current<br>−Continuous<br>~~ee~~|TC= 25°C (Note 5)<br>~~ee~~|59<br>~~ee~~|159<br>~~ee~~|A| ||−Continuous<br>~~ee~~|TC= 100°C (Note 5)<br>~~ee~~|37<br>~~ee~~|100<br>~~ee~~|| ||−Continuous<br>~~ee~~|TA= 25°C<br>~~ee~~|20 (Note 1a)<br>~~ee~~|40 (Note 1b)<br>~~ee~~|| ||−Pulsed<br>~~ee~~|(Note 3)<br>~~ee~~|266<br>~~ee~~|1116<br>~~ee~~|| |EAS<br>~~a~~|Single Pulse Avalanche Energy<br>|(Note 2)<br>|73<br>|294<br>|mJ| |PD<br><br>~~a~~|Power Dissipation for Single Operation<br>~~ee~~<br>|TC= 25°C<br>~~ee~~<br>~~ee~~<br>|21<br>~~ee~~<br>|37<br>~~ee~~<br>|W<br>| ||Power Dissipation for Single Operation<br>~~ee~~<br>|TA= 25°C<br>~~ee~~<br>~~ee~~<br>|2.1 (Note 1a)<br>~~ee~~<br>|2.3 (Note 1b)<br>~~ee~~<br>|| |TJ, TSTG<br>~~a~~|Operating and Storage Junction Temperature Range<br>~~ee~~<br>~~Ge~~||−55 to +150<br>~~Ge~~||°C<br>~~Ge~~| **THERMAL CHARACTERISTICS** (TA = 25 ° C, unless otherwise noted) ~~a~~ **Symbol Parameter Q1 Q2 Unit** R JC Thermal Resistance, Junction to Case 6.0 3.3 ° C/W ~~aa~~ R JA Thermal Resistance, Junction to Ambient 60 (Note 1a) 55 (Note 1b) ~~aa a~~ R JA Thermal Resistance, Junction to Ambient 130 (Note 1c) 120 (Note 1d) 1. R θ JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R θ JC is guaranteed by design while R θ CA is determined by the user’s board design. **==> picture [427 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> a. 60 ° C/W when mounted on b. 55 ° C/W when mounted on<br>a 1 in [2] pad of 2 oz copper a 1 in [2] pad of 2 oz copper<br>Q) : :<br>oooocd ooood<br>00000 ooooo<br>c. 130 ° C/W when mounted on d. 120 ° C/W when mounted on<br>a minimum pad of 2 oz copper a minimum pad of 2 oz copper<br>4[|t tT90000<br>ooo0°0<br>G DF DS SF SS G DF DS SF SS<br>G DF DS SF SS G DF DS SF SS<br>**----- End of picture text -----**<br> 2. Q1: EAS of 73 mJ is based on starting TJ = 25 ° C; N−ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 24 A. Q2: EAS of 294 mJ is based on starting TJ = 25 ° C; N−ch: L = 3 mH, IAS = 14 A, VDD = 25 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A. 3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details. 4. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 kHz frequency can be applied. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. **www.onsemi.com** **2** ## **FDPC8014AS** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICA**|**L CHARACTERISTICS**(TJ= 25°C|unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**|**Type**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |BVDSS|Drain to Source Breakdown<br>Voltage|ID= 250�A, VGS= 0 V<br>ID= 1 mA, VGS= 0 V|Q1<br>Q2|25<br>25|−<br>−|−<br>−|V| |�BVDSS/�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250�A, referenced to 25°C<br>ID= 10 mA, referenced to 25°C|Q1<br>Q2|−<br>−|24<br>25|−<br>−|mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 20 V, VGS= 0 V<br>VDS= 20 V, VGS= 0 V|Q1<br>Q2|−<br>−|−<br>−|1<br>500|�A<br>�A| |IGSS|Gate to Source Leakage Current,<br>Forward|VGS= 12 V / −8 V, VDS= 0 V<br>VGS= 12 V / −8 V, VDS= 0 V|Q1<br>Q2|−<br>−|−<br>−|±100<br>±100|nA<br>nA| |**ON CHARACTERISTICS**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250�A<br>VGS= VDS, ID= 1 mA|Q1<br>Q2|0.8<br>1.0|1.3<br>1.5|2.5<br>3.0|V| |�VGS(th)/�TJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250�A, referenced to 25°C<br>ID= 10 mA, referenced to 25°C|Q1<br>Q2|−<br>−|−4<br>−3|−<br>−|mV/°C| |rDS(on)|Drain to Source On Resistance|VGS= 10 V, ID= 20 A<br>VGS= 4.5 V, ID= 18 A<br>VGS= 10 V, ID= 20 A, TJ=125°C|Q1|−<br>−<br>−|2.9<br>3.6<br>3.9|3.8<br>4.7<br>5.3|m�| |||VGS= 10 V, ID= 40 A<br>VGS= 4.5 V, ID= 37 A<br>VGS= 10 V, ID= 40 A , TJ=125°C|Q2|−<br>−<br>−|0.75<br>0.9<br>1.0|1.0<br>1.2<br>1.5|| |gFS|Forward Transconductance|VDS= 5 V, ID= 20 A<br>VDS= 5 V, ID= 40 A|Q1<br>Q2|−<br>−|182<br>296|−<br>−|S| |**DYNAMIC CHARACTERISTICS**|||||||| |Ciss|Input Capacitance|Q1:<br>VDS= 13 V, VGS= 0 V, f = 1 MHZ<br>Q2:<br>VDS= 13 V, VGS= 0 V, f = 1 MHZ|Q1<br>Q2|−<br>−|1695<br>6985|2375<br>9780|pF| |Coss|Output Capacitance||Q1<br>Q2|−<br>−|495<br>2170|710<br>3040|pF| |Crss|Reverse Transfer Capacitance||Q1<br>Q2|−<br>−|54<br>172|100<br>245|pF| |Rg|Gate Resistance||Q1<br>Q2|0.1<br>0.1|0.4<br>0.4|1.2<br>1.2|�| |**SWITCHING CHARACTERISTICS**|||||||| |td(on)|Turn−On Delay Time|Q1:<br>VDD= 13 V, ID= 20 A, RGEN= 6�<br>Q2:<br>VDD= 13 V, ID= 40 A, RGEN= 6�|Q1<br>Q2|−<br>−|8<br>16|16<br>29|ns| |tr|Rise Time||Q1<br>Q2|−<br>−|2<br>6|10<br>12|ns| |td(off)|Turn−Off Delay Time||Q1<br>Q2|−<br>−|24<br>48|38<br>76|ns| |tf|Fall Time||Q1<br>Q2|−<br>−|2<br>5|10<br>10|ns| |Qg|Total Gate Charge|VGS= 0 V to 10 V<br>Q1: VDD= 13 V, ID= 20 A<br>Q2: VDD= 13 V, ID= 40 A|Q1<br>Q2|−<br>−|25<br>97|35<br>135|nC| |Qg|Total Gate Charge|VGS= 0 V to 4.5 V<br>Q1: VDD= 13 V, ID= 20 A<br>Q2: VDD= 13 V, ID= 40 A|Q1<br>Q2|−<br>−|11<br>44|16<br>62|nC| |Qgs|Gate to Source Gate Charge|Q1: VDD= 13 V, ID= 20 A<br>Q2: VDD= 13 V, ID= 40 A|Q1<br>Q2|−<br>−|3.4<br>14|−<br>−|nC| |Qgd|Gate to Drain “Miller” Charge||Q1<br>Q2|−<br>−|2.2<br>9|−<br>−|nC| **www.onsemi.com** **3** **FDPC8014AS** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) |**ELECTRICAL**|**CHARACTERISTICS**(TJ= 25°C|unless otherwise noted) (continued)|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**|**Type**|**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |VSD<br> <br>|Source to Drain Diode Forward<br>Voltage|VGS= 0 V, IS= 20 A (Note 6)<br>VGS= 0 V, IS= 40 A (Note 6)|Q1<br>Q2|−<br>−|0.8<br>0.8|1.2<br>1.2|V| |IS<br> <br>|Diode Continuous Forward<br>Current|TC= 25°C|Q1<br>Q2|−<br>−|59<br>159|−<br>−|A| |IS,Pulse<br>|Diode Pulse Current||Q1<br>Q2|−<br>−|266<br>1116|−<br>−|A| |trr<br>|Reverse Recovery Time|Q1: IF= 20 A, di/dt = 100 A/�s<br>Q2: IF= 40 A, di/dt = 300 A/�s|Q1<br>Q2|−<br>−|25<br>44|40<br>70|ns| |Qrr<br>|Reverse Recovery Charge||Q1<br>Q2|−<br>−|10<br>78|20<br>125|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: Pulse Width < 300 � s, Duty cycle < 2.0%. **TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [488 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> 75 5<br>VGS = 10 V PULSE DURATION = 80 � s<br>DUTY CIRCLE = 0.5% MAX<br>60 4<br>VGS = 2.5 V<br>VGS = 4.5 V<br>45 3<br>VGS = 3.5 V<br>VGS = 3 V<br>30 2 V GS = 3 V<br>VGS = 2.5 V<br>15 1<br>PULSE DURATION = 80 � s VGS= 3.5 V VGS = 4.5 V VGS= 10 V<br>DUTY CIRCLE = 0.5% MAX<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 0 15 30 45 60 75<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current<br>and Gate Voltage<br>1.6 12<br>ID = 20 A PULSE DURATION = 80 � s<br>1.5<br>V GS = 10 V DUTY CIRCLE = 0.5% MAX<br>1.4<br>9<br>1.3 ID = 20 A<br>1.2<br>6<br>1.1<br>TJ = 125 ° C<br>1.0<br>3<br>0.9<br>TJ = 25 ° C<br>0.8<br>0.7 0<br>−75 −50 −25 0 25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE ( ° C) VGS, GATE TO SOURCE VOLTAGE (V)<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON−RESISTANCE<br>rDS(on)<br>NORMALIZED<br>DRAIN TO SOURCE ON−RESISTANCE DRAIN TO SOURCE ON−RESISTANCE<br>**----- End of picture text -----**<br> **Figure 3. Normalized On Resistance vs. Junction Temperature** **Figure 4. On−Resistance vs. Gate to Source Voltage** **www.onsemi.com** **4** **FDPC8014AS** ## **TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [481 x 576] intentionally omitted <==** **----- Start of picture text -----**<br> 75 100<br>PULSE DURATION = 80 � s VDS = 5 V VGS = 0 V<br>DUTY CIRCLE = 0.5% MAX<br>60 10<br>45 1<br>TJ = 150 ° C TJ = 150 ° C TJ = 25 ° C<br>30 0.1<br>TJ = 25 ° C<br>15 0.01<br>TJ = −55 ° C TJ = −55 ° C<br>0 0.001<br>1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs.<br>Source Current<br>10 10000<br>ID = 20 A<br>8<br>VDD = 13 V 1000 Ciss<br>6<br>VDD = 10 V<br>4 Coss<br>VDD = 15 V 100<br>2<br>f = 1 MHz Crss<br>V GS = 0 V<br>0 10<br>0 6 12 18 24 30 0.1 1 10 25<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage<br>30 60<br>50<br>TJ = 25 ° C VGS = 10 V<br>10 40<br>TJ = 100 ° C<br>TJ = 125 ° C 30<br>VGS = 4.5 V<br>20<br>10<br>R � JC = 6.0 ° C/W<br>1 0<br>0.001 0.01 0.1 1 10 100 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( ° C)<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>, AVALANCHE CURRENT (A) ID<br>IAS<br>**----- End of picture text -----**<br> **Figure 9. Unclamped Inductive Switching Capability** **Figure 10. Maximum Continuous Drain Current vs. Case Temperature** **www.onsemi.com** **5** **FDPC8014AS** ## **TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [477 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 300 10000<br>SINGLE PULSE<br>100<br>10 � s R � JC = 6.0 ° C/W<br>TC = 25 ° C<br>10 100 � s 1000<br>THIS AREA IS LIMITED 1 ms<br>1 BY rDS(on) 10 ms<br>100 ms/ DC<br>100<br>SINGLE PULSE<br>0.1 TJ = MAX RATED<br>R � JC = 6.0 ° C/W CURVE BENT TO<br>T C = 25 ° C MEASURED DATA<br>0.01 10<br>0.01 0.1 1 10 100 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation<br>2<br>1 DUTY CYCLE−DESCENDING ORDER<br>D = 0.5<br>0.2 P DM<br>0.1<br>0.1<br>0.05<br>0.02 t1<br>0.01 t2<br>NOTES:<br>0.01 SINGLE PULSE Z � JC (t) = r(t) x R � JC<br>R � JC = 6.0 ° C/W<br>DUTY FACTOR: D = t 1 / t 2<br>TJ − TC = PDM x Z � JC (t)<br>0.001<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br> **Figure 13. Junction−to−Case Transient Thermal Response Curve** **www.onsemi.com** **6** **FDPC8014AS** ## **TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [229 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>VGS = 10 V<br>VGS = 4.5 V<br>120<br>VGS = 3.5 V<br>VGS = 3 V<br>90<br>VGS = 2.5 V<br>60<br>30<br>PULSE DURATION = 80 � s<br>DUTY CIRCLE = 0.5% MAX<br>0<br>0.0 0.2 0.4 0.6 0.8<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 14. On−Region Characteristics** **==> picture [244 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>VGS = 2.5 V PULSE DURATION = 80 � s<br>DUTY CIRCLE = 0.5% MAX<br>6<br>4<br>VGS = 3 V<br>2<br>VGS = 3.5 V VGS = 4.5 V VGS = 10 V<br>0<br>0 30 60 90 120 150<br>ID, DRAIN CURRENT (A)<br>NORMALIZED<br>DRAIN TO SOURCE ON−RESISTANCE<br>**----- End of picture text -----**<br> **Figure 15. Normalized on−Resistance vs. Drain Current and Gate Voltage** **==> picture [241 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5<br>ID = 40 A<br>1.4 VGS = 10 V<br>1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>−75 −50 −25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 16. Normalized On−Resistance vs.<br>Junction Temperature<br>150<br>PULSE DURATION = 80 � s<br>DUTY CIRCLE = 0.5% MAX<br>120<br>VDS = 5 V<br>90<br>60<br>TJ = 125 ° C TJ = 25 ° C<br>30<br>TJ = −55 ° C<br>0<br>1.0 1.5 2.0 2.5 3.0<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>NORMALIZED<br>DRAIN TO SOURCE ON−RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [241 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>PULSE DURATION = 80 � s<br>DUTY CIRCLE = 0.5% MAX<br>4<br>ID = 40 A<br>3<br>2<br>TJ = 125 ° C<br>1<br>TJ = 25 ° C<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>rDS(on)<br>DRAIN TO SOURCE ON−RESISTANCE<br>**----- End of picture text -----**<br> **Figure 17. On−Resistance vs. Gate to Source Voltage** **==> picture [233 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 100 VGS = 0 V<br>10<br>1 T J = 125 ° C<br>TJ = 25 ° C<br>0.1 TJ = −55 ° C<br>0.01<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 18. Transfer Characteristics** **Figure 19. Source to Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **7** **FDPC8014AS** ## **TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [478 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10000<br>ID = 40 A<br>Ciss<br>8<br>VDD = 13 V<br>6<br>Coss<br>1000<br>VDD = 10 V<br>4<br>VDD = 15 V<br>2 C rss<br>f = 1 MHz<br>VGS = 0 V<br>0 100<br>0 20 40 60 80 100 0.1 1 10 25<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain to Source Voltage<br>100 160<br>128<br>VGS = 10 V<br>TJ = 125 ° C TJ = 25 ° C 96<br>10 TJ = 100 ° C 64 VGS = 4.5 V<br>32<br>R � JC = 3.3 ° C/W<br>1 0<br>0.001 0.01 0.1 1 10 100 1000 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( ° C)<br>Figure 22. Unclamped Inductive Switching Capability Figure 23. Maximum Continuous Drain Current vs.<br>Case Temperature<br>2000 10000<br>1000 SINGLE PULSE<br>R � JC = 3.3 ° C/W<br>10 � s TC = 25 ° C<br>100<br>1000<br>100 � s<br>10 THIS AREA IS LIMITED<br>BY rDS(on) 1 ms<br>100<br>SINGLE PULSE 10 ms<br>1<br>TJ = MAX RATED 100 ms/ DC<br>R � JC = 3.3 ° C/W CURVE BENT TO<br>T C = 25 ° C MEASURED DATA<br>0.1 10<br>0.1 1 10 70 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>, AVALANCHE CURRENT (A) ID<br>IAS<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>**----- End of picture text -----**<br> **Figure 24. Forward Bias Safe Operating Area** **Figure 25. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **8** **FDPC8014AS** ## **TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [469 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1 DUTY CYCLE−DESCENDING ORDER<br>D = 0.5<br>0.2 P DM<br>0.1<br>0.1<br>0.05<br>0.02 t1<br>0.01 t2<br>NOTES:<br>0.01 SINGLE PULSE Z � JC (t) = r(t) x R � JC<br>R � JC = 3.3 ° C/W<br>DUTY FACTOR: D = t 1 / t 2<br>TJ − TC = PDM x Z � JC (t)<br>0.001<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br> **Figure 26. Junction−to−Case Transient Thermal Response Curve** ## **TYPICAL CHARACTERISTICS** ## **SyncFET Schottky Body Diode Characteristics** ON Semiconductor’s SyncFET process embeds a Schottky diode in parallel with POWERTRENCH MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverses recovery characteristic of the FDPC8014AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. **==> picture [476 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 50 10−2<br>TJ = 125 ° C<br>40<br>10 [−3]<br>30 TJ = 100 ° C<br>di/dt = 300 A/ � s<br>20 10 [−4]<br>10 T J = 25 ° C<br>10 [−5]<br>0<br>−10 10 [−6]<br>100 150 200 250 300 350 400 450 500 0 5 10 15 20 25<br>TIME (ns) VDS, REVERSE VOLTAGE (V)<br>CURRENT (A)<br>, REVERSE LEAKAGE CURRENT (A)<br>IDSS<br>**----- End of picture text -----**<br> **Figure 27. FDPC8014AS SyncFET Body Diode Reverse Recovery Characteristic** **Figure 28. SyncFET Body Diode Reverse Leakage vs. Drain−source Voltage** **www.onsemi.com** **9** **FDPC8014AS** ## **ORDERING INFORMATION** |**Device**|**Device Marking**|**Package**|**Reel Size**|**Tape Width**|**Shipping**†| |---|---|---|---|---|---| |FDPC8014AS|FDPC8014AS|Power Clip 56<br>PDFN8 5x6, 1.27P<br>(Pb−Free)|13”|12 mm|2000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark and SyncFET is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. **www.onsemi.com** **10** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [124 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> PQFN8 5.00x6.00x0.75, 1.27P<br>CASE 483AR<br>ISSUE D<br>**----- End of picture text -----**<br> ## DATE 06 NOV 2023 Electronic versions are uncontrolled except when accessed directly from the Document Repository. **98AON13666G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: PQFN8 5.00x6.00x0.75, 1.27P PAGE 1 OF 1** ## **DOCUMENT NUMBER:** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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