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FDMS9600S
Dual MOSFET, N Channel, 30 V, 30 V, 32 A, 32 A, 0.0085 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: PowerTrench Series
- Qualification: -
- Transistor Case Style: WDFN
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 32A
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 32A
- Continuous Drain Current Id P Channel: 32A
- Drain Source On State Resistance N Channel: 0.0085ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.977 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [40 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> May 2014<br>**----- End of picture text -----**<br> ## **FDMS9600S** **Dual N-Channel PowerTrench[®] MOSFET Q1: 30V, 32A, 8.5m Q2: 30V, 30A, 5.5m** ## **General Description** ## **Features** **==> picture [391 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> Q1: N-Channel<br>Max rDS(on) = 8.5m at VGS = 10V, ID = 12A<br>Max rDS(on) = 12.4m at VGS = 4.5V, ID = 10A<br>Q2: N-Channel<br>Max rDS(on) = 5.5m at VGS = 10V, ID = 16A<br>Max rDS(on) = 7.0m at VGS = 4.5V, ID = 14A Applications<br>Synchronous Buck Converter for:<br>Low Qg high side MOSFET<br>Low r low side MOSFET Notebook System Power<br>DS(on)<br>Thermally efficient dual Power 56 package General Purpose Point of Load<br>Pinout optimized for simple PCB design<br>RoHS Compliant<br>G1<br>D1 Q2<br>D1 5 4<br>D1 D1<br>6 3<br>S1/D2<br>G2 7 2<br>S2<br>S2 8 1<br>Q1<br>S2<br>Power 56<br>**----- End of picture text -----**<br> This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss "High Side" MOSFET is complemented by a Low Conduction Loss "Low Side" SyncFET. ## **MOSFET Maximum Ratings** TA = 25°C unless otherwise noted |**Symbol**<br>**Parameter**|||||**Q1**||**Q2**|**Q2**|**Units**| |---|---|---|---|---|---|---|---|---|---| |VDS<br>Drain to Source Voltage|||||30|||30|V| |VGS<br>Gate to Source Voltage|||||±20||±20||V| |Drain Current -Continuous<br>T|C= 25°C||||32|||30|| |ID<br>-Continuous TA= 25°C (Note 1a)|||= 25°C (Note 1a)||12|||16|A| |-Pulsed|||||60|||60|| |PD<br>Power Dissipation for Single Operation (Note 1a)<br>(Note 1b)|Power Dissipation for Single Operation (Note 1a)<br>(Note 1b)|Power Dissipation for Single Operation (Note 1a)<br>(Note 1b)|Power Dissipation for Single Operation (Note 1a)<br>(Note 1b)|||2.5<br>1.0|||W| |TJ, TSTG<br>Operating and Storage Junction Temperature Range|||||-55 to +150|-55 to +150|-55 to +150||°C| |**Thermal Characteristics**|||||||||| |R JA<br>Thermal Resistance, Junction to Ambient (Note 1a)<br>~~a~~|Thermal Resistance, Junction to Ambient (Note 1a)|Thermal Resistance, Junction to Ambient (Note 1a)|Thermal Resistance, Junction to Ambient (Note 1a)|||50|||| |R JA<br>Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient(Note 1b)|||120|||°C/W| |R JC<br>Thermal Resistance, Junction to Case|||||3||1.2||| |**Package Marking and Ordering Information**|||||||||| |**Device Marking**<br>**Device**<br>**Package**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FDMS9600S<br>FDMS9600S<br>Power 56<br>13”<br>12mm<br>3000 units<br>~~**e**s~~<br>~~e~~|||||||||| **1** ©2008 Fairchild Semiconductor Corporation FDMS9600S Rev.D2 www.fairchildsemi.com ## **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Electrica**|**l Characteristics**TJ= 25°C un|less otherwise noted|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**| |**Off Characteristics**|||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250�A, VGS= 0V<br>ID= 1mA, VGS= 0V|Q1<br>Q2|30<br>30|||V| |�BVDSS<br>�J<br>T|Breakdown Voltage Temperature<br>Coefficient|ID= 250�A, referenced to 25°C<br>ID= 1mA, referenced to 25°C|Q1<br>Q2||35<br>29||mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 24V, VGS= 0V|Q1<br>Q2|||1<br>500|�A| |IGSS|Gate to Source Leakage Current|VGS= ±20V, VDS= 0V|Q1<br>Q2|||±100<br>±100|nA<br>nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250�A<br>VGS= VDS, ID= 1mA|Q1<br>Q2|1<br>1|1.5<br>1.8|3<br>3|V| |�VGS(th)<br> �TJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250�A, referenced to 25°C<br>ID= 1mA, referenced to 25°C|Q1<br>Q2||-4.5<br>-6.0||mV/°C| |rDS(on)|Drain to Source On Resistance|VGS= 10V, ID= 12A<br>VGS= 4.5V, ID= 10A<br>VGS= 10V, ID= 12A , TJ= 125°C|Q1||7.0<br>9.2<br>8.6|8.5<br>12.4<br>13.0|m�| |||VGS= 10V, ID= 16A<br>VGS= 4.5V, ID= 14A<br>VGS= 10V, ID= 16A , TJ= 125°C|Q2||4.5<br>5.3<br>5.4|5.5<br>7.0<br>8.3|| |gFS|Forward Transconductance|VDD= 10V, ID= 12A<br>VDD= 10V, ID= 16A|Q1<br>Q2||54<br>68||S| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|VDS= 15V, VGS= 0V, f= 1MHz|Q1<br>Q2||1280<br>2300|1705<br>3060|pF| |Coss|Output Capacitance||Q1<br>Q2||525<br>1545|700<br>2055|pF| |Crss|Reverse Transfer Capacitance||Q1<br>Q2||80<br>250|120<br>375|pF| |Rg|Gate Resistance|f = 1MHz|Q1<br>Q2||1.0<br>1.7||�| |**Switching Characteristics**|||||||| |td(on)|Turn-On Delay Time|VDD= 10V, ID= 1A,<br>VGS= 10V, RGEN= 6�|Q1<br>Q2||13<br>17|23<br>31|ns| |tr|Rise Time||Q1<br>Q2||6<br>11|12<br>20|ns| |td(off)|Turn-Off Delay Time||Q1<br>Q2||42<br>54|67<br>86|ns| |tf|Fall Time||Q1<br>Q2||12<br>32|22<br>51|ns| |Qg(TOT)|Total Gate Charge|Q1<br>VDD= 15V, VGS= 4.5V, ID= 12A<br>Q2<br>VDD= 15V, VGS= 4.5V, ID= 16A|Q1<br>Q2||9<br>21|13<br>29|nC| |Qgs|Gate to Source Gate Charge||Q1<br>Q2||3<br>8||nC| |Qgd|Gate to Drain “Miller” Charge||Q1<br>Q2||2.7<br>6.5||nC| www.fairchildsemi.com **2** FDMS9600S Rev.D2 **Electrical Characteristics** TJ = 25°C unless otherwise noted **==> picture [470 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> a Symbol Parameter Test Conditions Type Min Typ Max Units<br>Drain-Source Diode Characteristics<br>Q1 2.1<br>IS Maximum Continuous Drain-Source Diode Forward Current Q2 3.5 A<br>a VGS = 0V, IS = 2.1A (Note 2) Q1 0.7 1.2<br>VSD Source to Drain Diode [Forward Voltage] VGS = 0V, IS = 3.5A (Note 2) Q2 0.4 1.0 V<br>VGS = 0V, IS = 8.2A (Note 2) Q2 0.5 1.0<br>Q1 Q1 33<br>trr Reverse Recovery Time IF = 12A, di/dt = 100A/ s Q2 27 ns<br>Q2 Q1 20<br>aee Qrr Reverse Recovery Charge IF = 16A, di/dt = 300A/ eeee s ee Q2 33 nC<br>**----- End of picture text -----**<br> **Notes: 1:** R JA is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R JC is guaranteed by design while R CA is determined by the user's board design. - a.50°C/W when mounted on b. 120°C/W when mounted on a a 1 in[2 ] pad of 2 oz copper minimum pad of 2 oz copper - **2:** Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. www.fairchildsemi.com **3** FDMS9600S Rev.D2 ## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted **==> picture [469 x 576] intentionally omitted <==** **----- Start of picture text -----**<br> 60 2.8<br>VGS = 10V PULSE DURATION = 300 � s 2.6 PULSE DURATION = 300 � s<br>50 DUTY CYCLE = 2.0%MAX VGS = 3V DUTY CYCLE = 2.0%MAX<br>2.4<br>40 VGS = 3.5V 2.2 V GS =3.5V<br>2.0 V GS = 4.5V<br>30 VGS = 6V VGS = 3V 1.81.6 V GS = 10V V GS = 4V<br>20 V GS = 4.5V<br>1.4<br>VGS = 4V VGS = 6V<br>1.2<br>10<br>1.0<br>0 0.8<br>0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 60<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.6 30<br>1.5 IVDGS = 12A =10V 25 ID = 6A PULSE DURATION = 300DUTY CYCLE = 2.0%MAX � s<br>1.4<br>1.3 20<br>1.2<br>15<br>1.1 TJ = 125 [o] C<br>1.0 10<br>0.9<br>5<br>0.8 TJ = 25 [o] C<br>0.7 0<br>-50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. Normalized On-Resistance Figure 4. On-Resistance vs Gate to<br>vs Junction Temperature Source Voltage<br>60 60<br>PULSE DURATION = 300 � s V GS = 0V<br>50 DUTY CYCLE = 2.0%MAX 10<br>VDD = 5V<br>40 T J = 125 [o] C<br>1<br>30<br>TJ =125 [o] C 0.1 TJ = 25 [o] C<br>20<br>TJ = 25 [o] C<br>0.01<br>10<br>TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>1.0 1.5 2.0 2.5 3.0 3.5 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>�<br>m<br>(<br>, DRAIN TO<br>NORMALIZED rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> www.fairchildsemi.com **4** FDMS9600S Rev.D2 **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted **==> picture [471 x 577] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2000<br>ID = 12A<br>8 V DD =10V 1000 Ciss<br>6 Coss<br>VDD = 15V<br>4<br>VDD = 20V 100<br>2 f = 1MHz<br>VGS = 0V Crss<br>0 30<br>0 5 10 15 20 25 0.1 1 10 30<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain<br>to Source Voltage<br>100 300<br>VGS = 10V SINGLE PULSE<br>10 100 R � JA = 120oC/W<br>1ms TA = 25oC<br>10ms<br>1<br>SINGLE PULSE 10<br>TJ = MAX RATE 100ms<br>R � JA = 120 [o] C/W 1s<br>0.1 TA = 25 [o] C<br>10s<br>THIS AREA IS LIMITED<br> BY r DS(ON) DC 1<br>0.01 0.5<br>0.1 1 10 100 10-3 10-2 10-1 1 10 100 1000<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)<br>Figure 9. Forward Bias Safe Figure 10. Single Pulse Maximum<br>Operating Area Power Dissipation<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br> 0.2<br> 0.1<br> 0.05<br>0.1 0.02 PDM<br>0.01<br>t1<br>0.01 t2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>PEAK T J = P DM x Z �JA x R �JA + T A<br>0.002<br>10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 11. Transient Thermal Response Curve<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>D<br> I<br>, PEAK TRANSIENT POWER (W)P)(PK<br>IMPEDANCE, ZJA �<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br> FDMS9600S Rev.D2 **==> picture [72 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> www.fairchildsemi.com<br>**----- End of picture text -----**<br> **5** ## **Typical Characteristics (Q2 SyncFET)** **==> picture [468 x 578] intentionally omitted <==** **----- Start of picture text -----**<br> 60 2.8<br>50 VGS = 10V VVGSGS = = 3.5V4V 2.62.4 V GS =3V PULSE DURATION = 300DUTY CYCLE = 2.0%MAX � s<br>VGS = 4.5V 2.2<br>40<br>VGS = 6V 2.0 V GS = 3.5V<br>30 1.8 V GS = 6V VGS = 4.5V<br>VGS = 3V 1.6 V GS = 4V<br>20<br>1.4<br>PULSE DURATION = 300 � s 1.2<br>10 DUTY CYCLE = 2.0%MAX<br>1.0<br>0 0.8 VGS = 10V<br>0.0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 12. On-Region Characteristics Figure 13. Normalized on-Resistance v � Drain<br>Current and Gate Voltage<br>1.8 14<br> ID = 16A PULSE DURATION = 300 � s<br>1.6 V GS =10V 12 ID = 8A DUTY CYCLE = 2.0%MAX<br>1.4 10<br>1.2 8<br>TJ = 125 [o] C<br>1.0 6<br>0.8 4<br>TJ = 25 [o] C<br>0.6 2<br>-50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 14. Normalized On-Resistance Figure 15. On-Resistance vs Gate to<br>vs Junction Temperature Source Voltage<br>60 60<br>PULSE DURATION = 300 � s V GS = 0V<br>50 DUTY CYCLE = 2.0%MAX 10<br>VDD = 5V<br>40 T J = 125 [o] C<br>1<br>30<br>TJ =125 [o] C 0.1 TJ = 25 [o] C<br>20<br>TJ = 25 [o] C<br>0.01<br>10<br>TJ = -55 [o] C TJ = -55 [o] C<br>0 0.001<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 16. Transfer Characteristics Figure 17. Source to Drain Diode<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>�<br>m<br>(<br>, DRAIN TO<br>NORMALIZED rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **==> picture [154 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 17. Source to Drain Diode<br> Forward Voltage vs Source Current<br>**----- End of picture text -----**<br> www.fairchildsemi.com **6** FDMS9600S Rev.D2 ## **Typical Characteristics** **==> picture [470 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 10 5000<br>ID = 16A Ciss<br>8 VDD =10V<br>Coss<br>6 1000<br>VDD = 15V<br>4<br>VDD = 20V<br>2 f = 1MHz VGS = 0V C rss<br>0 100<br>0 10 20 30 40 50 0.1 1 10 30<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 18. Gate Charge Characteristics** **Figure 19. Capacitance vs Drain to Source Voltage** www.fairchildsemi.com **7** FDMS9600S Rev.D2 **==> picture [544 x 722] intentionally omitted <==** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. 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