FDMQ8403

**DATA SHEET** ~~ee~~ **www.onsemi.com** 

## MOSFET ~~—~~ – N-Channel, POWERTRENCH , . GreenBridge Series of High-Efficiency Bridge Rectifiers 

## 100 V, 6 A, 110 m 

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VDSS RDS(ON) MAX ID MAX<br>100 V 110  @ 10 V 6 A<br>esee<br>Pin 1<br>G4 G1<br>D1/D4 D1/D4<br>D3/S4 S1/D2<br>G3 G2<br>S3 S2<br>S3 S2<br>**----- End of picture text -----**<br>


## FDMQ8403 

**WDFN12 5 x 4.5, 0.8P (MLP 4.5 x 5) CASE 511CR** 

## **General Description** 

This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. 

## **Features** 

- Max rDS(on) = 110 m at VGS = 10 V, ID = 3 A 

## **MARKING DIAGRAM** 

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$Y&Z&2&K<br>FDMQ<br>8403<br>**----- End of picture text -----**<br>


- Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A 

- Substantial Efficiency Benefit in PD Solutions 

- This Device is Pb−Free, Halid Free and is RoHS Compliant 

## **Applications** 

- High−Efficiency Bridge Rectifiers 

FDMQ8403 = Specific Device Code $Y = **onsemi** Logo &Z = Assembly plant code &2 = Date Code format (Year and Week) &K = Lot Run Traceability Code 

**MOSFET MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

## **PIN CONNECTION** 

|**Symbol**|**Rating**||**Value**|**Unit**|||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|VDS<br>VGS|Drain to Source Voltage<br>Gate to Source Voltage||100<br>±20|V<br>V|S3|7||||||Q3||Q2|||||||6|S2|
|ID|Drain Current|||A|S3|8|||||||||||||||5|S2|
|PD<br>TJ, TSTG|− Continuous (Package Limited)<br>− Continuous (Silicon Limited)<br>− Continuous (Note 1a.)<br>− Pulsed<br>Power Dissipation<br>Power Dissipation (Note 1a.)<br>Operating and Storage Junction Temperature|TC= 25°C<br>TC= 25°C<br>TA= 25°C<br>TC= 25°C<br>TA= 25°C<br>Operating and Storage Junction Temperature|6<br>9<br>3.1<br>12<br>17<br>1.9<br>−55 to|W<br>°C|G3<br>D3/S4<br>D1/D4<br>G4|Q4<br>9<br>10<br>11<br>12<br>~~@~~||||||||Q1<br>1<br>2<br>3<br>4<br> ~~Oye~~||||||||G2<br>S1/D2<br>D1/D4<br>G1|
||Range||+150||||||||||||||||||||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 5 of this data sheet. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Rating**|**Value**|**Unit**|
|---|---|---|---|
|R JA|Thermal Resistance, Junction to Ambient<br>(Note 1a.)|65|°C/W|
|R JA<br>~~peop~~|Thermal Resistance, Junction to Ambient<br>(Note 1b.)<br>~~peop~~|135<br>~~peop~~||



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2012 **July, 2022 − Rev. 3** 

**FDMQ8403/D** 

**FDMQ8403** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Symbol**<br>**Parameter**<br>**Test Condition**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~a|~~|
|---|
|BVDSS<br>Drain to Source Breakdown Voltage<br>VGS= 0 V, ID= 250 A<br>100<br>−<br>−<br>V<br>BVDSS<br>TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250 A, Referenced to 25°C<br>−<br>72<br>−<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VGS= 0 V, VDS= 80 V<br>−<br>−<br>1<br>nA<br>~~a~~<br>~~eses~~<br>~~ee~~<br>~~ee ee ee~~<br>~~a as~~|
|IGSS<br>Gate to Source Leakage Current<br>VGS=±20 V, VDS= 0 V<br>−<br>−<br>±100<br>A<br>~~a es~~|
|**OFF CHARACTERISTICS**|
|VGS(th)<br>Drain to Source Breakdown Voltage<br>VGS= VDS, ID= 250 A<br>2<br>2.8<br>4<br>V<br>VGS(th)<br>TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250 A, Referenced to 25°C<br>−<br>−8<br>−<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10 V, ID= 3 A<br>−<br>85<br>110<br>m<br>VGS= 6 V, ID= 2.4 A<br>−<br>115<br>175<br>VGS= 10 V, ID= 3 A, TJ= 125°C<br>−<br>147<br>191<br>gFS<br>Forward Transconductance<br>VDS= 10 V, ID= 3 A<br>−<br>6<br>−<br>S<br>~~aQe~~<br>~~ee~~<br>~~ee ee~~<br>~~es~~<br>~~ee ee~~<br>ee<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~a~~|
|**DYNAMIC CHARACTERISTICS**|
|Ciss<br>Input Capacitance<br>VDS= 50 V, VGS= 0 V, f = 1 MHz<br>−<br>162<br>215<br>pF|
|Coss<br>Output Capacitance<br>−<br>43<br>60<br>pF|
|Crss<br>Reverse Transfer Capacitance<br>−<br>2.6<br>5<br>pF|
|**DYNAMIC CHARACTERISTICS**|
|td(on)<br>Turn−On Delay Time<br>VDD= 50 V, ID= 3 A,<br>VGS= 10 V, RGEN= 6<br>−<br>4.1<br>10<br>ns<br>tr<br>Rise Time<br>−<br>1.2<br>10<br>ns<br>td(off)<br>Turn−Off Delay Time<br>−<br>7.2<br>15<br>ns<br>tf<br>Fall Time<br>−<br>1.8<br>10<br>ns<br>Qg<br>Total Gate Charge<br>VGS= 0 V to 10 V<br>VDD= 50 V,<br>ID= 3 A<br>−<br>3<br>5<br>nC<br>Qg<br>Total Gate Charge<br>VGS= 0 V to 5 V<br>−<br>1.7<br>3<br>nC<br>Qgs<br>Gate to Source Charge<br>VDD= 50 V,<br>ID= 3 A<br>−<br>0.9<br>−<br>nC<br>Qgd<br>Gate to Drain “Miller” Charge<br>−<br>0.8<br>−<br>nC<br>~~a~~<br>~~ee~~<br>;<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~$f~~<br>~~ee~~<br>~~ee~~<br>~~a a~~<br>~~ee~~|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|
|VSD<br>Source to Drain Diode Forward Voltage<br>VGS= 0 V, IS= 3 A (Note 2)<br>−<br>0.86<br>1.3<br>V<br>trr<br>Reverse Recovery Time<br>IF= 3 A, di/dt = 100 A/ s<br>−<br>33<br>53<br>ns<br>Qrr<br>Reverse Recovery Charge<br>−<br>23<br>37<br>nC<br>~~a~~<br>~~es~~<br>~~$4~~<br>~~8~~<br>~~++~~<br>~~ee~~<br>~~ee~~<br>~~a a~~<br>~~ee~~|
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product|
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.|



1. R JA is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R JC is guaranteed by design while R ~~0~~ CA is determined by the user’s board design. 

a. 65 ° C/W when mounted on a 1 in[2] b. 135 ° C/W when mounted on a minimum pad of 2 oz copper, the board pad of 2 oz copper, the board designed i designed Q1 + Q3 or Q2 + Q4. Q1 + Q3 or Q2 + Q4. 

b. 135 ° C/W when mounted on a minimum 

2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. mM 

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**2** 

**FDMQ8403** 

## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted. 

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12 5<br>VGS = 10 V VGS = 5 V PULSE DURATION = 80  � s<br>VGS = 8 V DUTY CYCLE = 0.5% MAX<br>VGS = 7 V VGS = 6 V 4<br>9<br>VGS = 6 V<br>3<br>6<br>2<br>VGS = 5 V VGS = 7 V<br>3<br>1<br>PULSE DURATION = 80  � s VGS = 10 V<br>DUTY CYCLE = 0.5% MAX VGS = 8 V<br>0 0<br>0 1 2 3 4 5 0 3 6 9 12<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. Drain<br>Current and Gate Voltage<br>2.0 400<br>1.8 V ID GS  = 3 A  = 10 V ID = 3 A DUTY CYCLE = 0.5% MAXPULSE DURATION = 80  � s<br>300<br>1.6<br>1.4<br>200<br>1.2<br>TJ = 125 ° C<br>1.0<br>100<br>TJ = 25 ° C<br>0.8<br>0.6 0<br>−75 −50 −25 0 25 50 75 100 125 150 4 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE ( ° C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. Normalized On Resistance Figure 4. On−Resistance vs. Gate<br>vs. Junction Temperature to Source Voltage<br>12 20<br>PULSE DURATION = 80  � s 10 VGS = 0 V<br>DUTY CYCLE = 0.5% MAX<br>9 T J  = 150 ° C<br>VDS = 5 V 1<br>TJ = 150 ° C<br>6 T J  = 25 ° C<br>0.1<br>TJ = 25 ° C<br>3 0.01<br>TJ = −55 ° C<br>TJ = −55 ° C<br>0 0.001<br>2 3 4 5 6 7 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON−RESISTANCE<br>) �<br>NORMALIZED  , DRAIN TO SOURCE<br>ON−RESISTANCE (m<br>rDS(on)<br>DRAIN TO SOURCE ON−RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics** 

**Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** 

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**3** 

**FDMQ8403** 

## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) 

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10 1000<br>ID = 3 A VDD = 50 V<br>8<br>VDD = 25 V VDD = 75 V 100 C iss<br>6<br>C oss<br>4<br>10<br>2<br>f = 1 MHz<br>V GS  = 0 V C rss<br>0 1<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source<br>Voltage<br>20 500<br>10<br>100  � s 100<br>1<br>1 ms<br>10 ms<br>THIS AREA IS<br>10<br>0.1 LIMITED BY rDS(on) 100 ms<br>SINGLE PULSE<br>1 s<br>0.01 RTTAJ �  = MAX RATEDJA= 25 = 135 ° C ° C/W 10 sDC 1 SINGLE PULSE  R TA �  = 25 JA = 135 ° C ° C/W<br>0.005 0.5<br>0.1 1 10 100 300 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1 10 100 1000<br>VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power<br>Dissipation<br>2<br>DUTY CYCLE−DESCENDING ORDER<br>D = 0.5<br>0.2<br>0.1<br>0.1 0.05<br>0.02 PDM<br>0.01<br>t1<br>0.01 t2<br>NOTES:<br>SINGLE PULSE<br>R � JA  = 135 ° C/W DUTY FACTOR: D = t1/t2<br>PEAK TJ = PDM ×  Z � JA ×  R � JA+ TA<br>0.001<br>10 [−4] 10 [−3] 10 [−2] 10 [−1] 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (s)<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLATGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>IMPEDANCE<br>, NORMALIZED THERMAL<br>JA<br>�<br>Z<br>**----- End of picture text -----**<br>


**Figure 11. Junction−to−Ambient Transient Thermal Response Curve** 

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**4** 

**FDMQ8403** 

## **ORDERING INFORMATION** 

|**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Shipping**†|
|---|---|---|---|---|---|
|FDMQ8403|FDMQ8403|WDFN12<br>(Pb−Free)|13�|12 mm|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

GreenBridge is a trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. 

POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. 

**www.onsemi.com** 

**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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WDFN12 5x4.5, 0.8P<br>CASE 511CR<br>ISSUE A<br>DATE 21 MAR 2017<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2019 

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