FDMQ8205

**DATA SHEET www.onsemi.com** 

## GreenBridge�2 Series of High-Efficiency Bridge Rectifiers 

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## FDMQ8205 

## **WDFN12 5x4.5, 0.8P CASE 511CS** 

## **General Description** 

FDMQ8205 is GreenBridge 2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high−efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205 is configured with low RDS(on) dual P−ch MOSFETs and N−ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205 enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications. 

FDMQ8205 GreenBridge 2 is compatible with IEEE802.3at PoE standard by not compromising detection and classification requirement as well as small backfeed voltage. 

## **MARKING DIAGRAM** 

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$Y&Z&2&K<br>FDMQ<br>8205<br>FDMQ8205 = Specific Device Code<br>$Y  =  onsemi  Logo<br>&Z  = Assembly plant code<br>&2  = Date Code format(Year and<br>    Week)<br>&K  = Lot Run Traceability Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 9 of this data sheet. 

## **Features** 

- Low Power Loss GreenBridge Replaces Diode Bridge 

- Self Driving Circuitry for MOSFETs 

- Low R 80 V Rated MOSFETs DS(on) 

- Maximizing Available Power and Voltage 

- Eliminating Thermal Design Problems 

- IEEE802.3at Compatible 

   - ♦ Meet Detection and Classification Requirement 

   - ♦ Work with 2 and 4−pair Architecture 

   - ♦ Small Backfeed Voltage 

- Compact MLP 4.5 x 5 Package 

- These Device is Pb−Free and Halogen Free. 

## **Applications** 

- Power over Ethernet (PoE) Power Device (PD) 

   - ♦ IP Phones 

   - ♦ Network Cameras 

   - ♦ Wireless Access Points 

   - ♦ Thin Clients 

   - ♦ Microcell 

   - ♦ Femtocell 

Publication Order Number: **FDMQ8205/D** 

**1** 

© Semiconductor Components Industries, LLC, 2021 **April, 2022 − Rev. 2** 

**FDMQ8205** 

## **TYPICAL APPLICATION** 

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RJ45<br>Connector<br>1 POUT<br>G3 G2<br>FDMQ8205<br>2 VOUTP<br>INPUT2 INPUT1<br>3<br>VOUT+<br>TVS 0.1  � F PoE PD 22  � F Isolated<br>G4 G1 Interface DC/DC<br>Converter<br>VOUT−<br>6 NOUT<br>4<br>VOUTN<br>POUT<br>5<br>G3 G2<br>7 FDMQ8205<br>INPUT2 INPUT1<br>8<br>G4 G1<br>NOUT<br>**----- End of picture text -----**<br>


**Figure 1. Typical Application of Power Device for Power over Ethernet** 

## **BLOCK DIAGRAM** 

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OUTP OUTP<br>Q3 Q2<br>G3 Gate Gate G2<br>driven driven<br>Q4 Q1<br>Gate Gate<br>G4 driven driven G1<br>OUTN INPUT2 INPUT1 OUTN<br>**----- End of picture text -----**<br>


**Figure 2. Block Diagram** 

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**FDMQ8205** 

## **PIN CONFIGURATION** 

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G4 12 1 G1<br>OUTN 11 INPUT2 INPUT1 2 OUTN<br>(16) (13)<br>OUTN 10 3 OUTN<br>G3 9 4 G2<br>OUTP 8 INPUT2 INPUT1 5 OUTP<br>(15) (14)<br>OUTP 7 6 OUTP<br>**----- End of picture text -----**<br>


MLP 4.5x5 

**Figure 3. Pin Assignment (Bottom View)** 

## **PIN DESCRIPTION** 

|**PIN DESCRIPTION**|||
|---|---|---|
|**Pin No.**|**Name**|**Description**|
|1|G1|Gate of Q1 N−ch MOSFET|
|4|G2|Gate of Q2 P−ch MOSFET|
|9|G3|Gate of Q3 P−ch MOSFET|
|12|G4|Gate of Q4 N−ch MOSFET|
|13, 14|INPUT1|Input1 of GreenBridge|
|15, 16|INPUT2|Input2 of GreenBridge|
|2, 3, 11, 10|OUTN|Negative Output of GreenBridge|
|5, 6, 7, 8|OUTP|Positive Output of GreenBridge|



1. Show the feature that provides orientation or pin 1 location. 

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**3** 

**FDMQ8205** 

**ABSOLUTE MAXIMUM RATINGS** 

**Min Max Unit** ~~a a~~ INPUT1, INPUT2 to OUTN − 80 V ~~a~~ OUTP to INPUT1, INPUT2 − 80 V INPUT1 to INPUT2 − 80 V ~~a~~ INPUT2 to INPUT1 − 80 V ~~a~~ OUTP to OUTN − 80 V ~~eG~~ G1, G2, G3, G4 to OUTN − 70 V ~~a~~ OUTP to G1, G2, G3, G4 − 70 V ~~I~~ VG_TRANSIENT Transient Gate Voltage, Pulse Width < 200 s, − 100 V Duty Cycle < 0.003% ~~aa~~ Continuous IINPUT (GreenBridge Current, TA = 25 ° C (Note 2a) − 3.0 A Q1 + Q3 or Q2 + Q4) TA = 25 ° C (Note 2b) − 1.7 A ~~ee~~ ~~**a**~~ Pulsed IINPUT (Q1 + Q3 or Q2 + Q4) Pulse Width < 300 s, Duty Cycle < 2% (Note 3) ~~ee eee~~ − 58 A PD (Power Dissipation, Q1 + Q3 or Q2 + Q4) TA = 25 ° C (Note 2a) − 2.5 W ~~ee~~ TA = 25 ° C (Note 2b) − 0.78 W ~~a ee a~~ Max Junction Temperature ~~eee~~ − 150 ° C 

- Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

2. R JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R JC is guaranteed by design while R CA is determined by the user’s board design. 

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a. 50 ° C/W when mounted on a 1 in [2]  pad of<br>2 oz copper, the board designed Q1 + Q3<br>or Q2 + Q4.<br>OUTN F OUTN S OUTP F OUTP S<br>**----- End of picture text -----**<br>


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b. 160 ° C/W when mounted on a minimum<br>pad of 2 oz copper, the board designed<br>Q1 + Q3 or Q2 + Q4.<br>OUTN F OUTN S OUTP F OUTP S<br>**----- End of picture text -----**<br>


3. Pulse Id measured at td ≤ 300 s, refer to SOA graph for more details. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~GO~~|**Min**<br>~~GO~~|**Typ**<br>~~GO~~|**Max**<br>~~GO~~|**Unit**<br>~~GO~~|
|---|---|---|---|---|---|
|R JC<br>~~a~~|Thermal Resistance, Junction to Case<br>~~a~~|−<br>~~a~~|5.1<br>~~a~~|−<br>~~a~~|°C/W|
|R JA<br>~~a~~|Thermal Resistance, Junction to Ambient (Note 2a)<br>~~a~~|−<br>~~a~~|50<br>~~a~~|−<br>~~a~~||
|R JA<br>~~A~~|Thermal Resistance, Junction to Ambient (Note 2b)<br>~~A~~|−<br>~~A~~|160<br>~~A~~|−<br>~~A~~||



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**FDMQ8205** 

## **RECOMMENDED OPERATING CONDITIONS** 

|**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|---|
|VINPUT|Input Voltage of Bridge|INPUT1 to INPUT2 or INPUT2 to INPUT1|−|57|V|
|VG|Gate Voltage of MOSFETs|G1, G4 to OUTN<br>G2, G3 to OUTP|−|57|V|
|IINPUT|Input Current of Bridge|Bridge Current through Q2 and Q4 or (Q3 and Q1)|−|1.7|A|
|Ambient Operation Temperature (TA)|||−40|85|°C|
|Junction Operating Temperature (TJ) (Note 4)|||−40|125|°C|



Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 

4. Backfeed Voltage can not be guaranteed for junction temperature in excess of 85 ° C. See VBF in Electrical Characteristics Table. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**AL CHARACTERISTICS**(TJ|= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|VINPUT|Input Voltage of Bridge|At INPUT1 to INPUT2 or INPUT2 to INPUT1|−|−|57|V|
|VG|Gate Voltage of MOSFETs|At G1, G4 to OUTN and G2, G3 to OUTP|−|−|57|V|
|IQ|Quiescent Current|Detection Mode<br>1.5 V < VINPUT= VG< 10.1 V (Note 5)|−|−|5|�A|
|||Classification Mode<br>10.2 V < VINPUT= VG< 23.9 V (Note 5)|−|−|400|�A|
|||Power On Mode<br>Maximum VINPUT= VG= 57 V (Note 5)|−|−|3.2|mA|
|VTURN_ON|Turn−On Voltage of<br>MOSFETs|Turn−On of MOSFETs while VGIncreases<br>(Note 4)|32|−|36|V|
|ILEAKAGE|Turn−Off Leakage Current|VOUTP= 57 V, VOUTN= 0 V<br>TJ= −40°C to 85°C (Note 5)|−|−|700|�A|
|VBF|Backfeed Voltage|VOUTP= 57 V, VOUTN= 0 V, 100 k�<br>between INPUT1 and INPUT2<br>TJ= −40°C to 85°C (Note 5)|−|−|2.7|V|
|RDS(on)|N−ch MOSFET|VG= 42 V, IINPUT= 1.5 A, TA= 25°C|−|35|51|m�|
|||VG= 48 V, IINPUT= 1.5 A, TA= 25°C|−|29|44|m�|
|||VG= 57 V, IINPUT= 1.5 A, TA= 25°C|−|26|37|m�|
||P−ch MOSFET|VG= −42 V, IINPUT= −1.5 A, TA= 25°C|−|95|147|m�|
|||VG= −48 V, IINPUT= −1.5 A, TA= 25°C|−|83|125|m�|
|||VG= −57 V, IINPUT= −1.5 A, TA= 25°C|−|76|107|m�|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. INPUT1 is connected to G3 and G4 and also INPUT2 is connected to G1 and G2 like below. 

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VOUT+<br>OUTP<br>G3 G2<br>FDMQ8205<br>INPUT2 INPUT2 INPUT1<br>G4 G1<br>OUTN<br>INPUT1<br>VOUT+<br>**----- End of picture text -----**<br>


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**5** 

**FDMQ8205** 

## **TYPICAL CHARACTERISTICS (Q1 OR Q4 N−CHANNEL)** 

(TJ = 25 ° C unless otherwise noted.) 

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2.0<br>ID = 1.7 A<br>1.8 V GS  = 57 V<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>−75 −50 −25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>ON−RESISTANCE<br>NORMALIZED DRAIN TO SOURCE<br>**----- End of picture text -----**<br>


**Figure 4. Normalized On Resistance vs. Junction Temperature** 

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10 2<br>VGS = 0 V<br>10<br>1 TJ = 150 ° C TJ = 25 ° C<br>10 [−1]<br>10 [−2]<br>10 [−3]<br>TJ = −55 ° C<br>10 [−4]<br>10 [−5]<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Source to Drain Diode Forward Voltage vs. Source Current** 

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10−1<br>VDS = 0 V<br>10 [−2]<br>10 [−3]<br>10 [−4] TJ = 125 ° C<br>10 [−5]<br>10 [−6]<br>10 [−7] TJ = 25 ° C<br>10 [−8]<br>10 [−9]<br>0 10 20 30 40 50 60 70<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>, GATE LEAKAGE CURRENT (A)<br>Ig<br>**----- End of picture text -----**<br>


**Figure 6. Gate Leakage Current vs. Gate to Source Voltage** 

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**6** 

**FDMQ8205** 

## **TYPICAL CHARACTERISTICS (Q2 OR Q3 P−CHANNEL)** 

(TJ = 25 ° C unless otherwise noted.) 

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1.8<br>ID = −1.7 A<br>1.6 VGS = −57 V<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>−75 −50 −25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 7. Normalized On Resistance vs.<br>Junction Temperature<br>10−1<br>VDS = 0 V<br>10 [−2]<br>10 [−3]<br>10 [−4] TJ = 125 ° C<br>10 [−5]<br>10 [−6]<br>10 [−7] TJ = 25 ° C<br>10 [−8]<br>10 [−9]<br>0 10 20 30 40 50 60 70<br>−VGS, GATE TO SOURCE VOLTAGE (V)<br>ON−RESISTANCE<br>NORMALIZED DRAIN TO SOURCE<br>, GATE LEAKAGE CURRENT (A)<br>g<br>−I<br>**----- End of picture text -----**<br>


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10 2<br>VGS = 0 V<br>10<br>1 TJ = 150 ° C TJ = 25 ° C<br>10 [−1]<br>10 [−2]<br>10 [−3]<br>TJ = −55 ° C<br>10 [−4]<br>10 [−5]<br>0.2 0.4 0.6 0.8 1.0 1.2<br>−VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, REVERSE DRAIN CURRENT (A)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 8. Source to Drain Diode Forward Voltage vs. Source Current** 

**Figure 9. Gate Leakage Current vs. Gate to Source Voltage** 

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**7** 

**FDMQ8205** 

## **TYPICAL CHARACTERISTICS (Q1 + Q3 OR Q2 + Q4 IN SERIAL)** 

(TJ = 25 ° C unless otherwise noted.) 

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100<br>THIS AREA IS<br>LIMITED BY rDS(on)<br>10 100  � s<br>1 ms<br>1<br>10 ms<br>100 m s<br>0.1<br>SINGLE PULSE 1 s<br>0.01 RT J �  = MAX RATEDJA = 160 ° C/W 10 sDC<br>TA = 25 ° C<br>0.001<br>0.01 0.1 1 10 100 400<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 10. Forward Bias Safe Operating Area** 

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2000<br>1000<br>100<br>10<br>1 SINGLE PULSE<br>R � JA = 160 ° C/W<br>TA = 25 ° C<br>0.1<br>10 [−4] 10 [−3] 10 [−2] 10 [−1] 1 10 10 [2] 103<br>t, PULSE WIDTH (sec)<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>**----- End of picture text -----**<br>


**Figure 11. Single Pulse Maximum Power Dissipation** 

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2<br>1 DUTY CYCLE−DESCENDING ORDER<br>D = 0.5<br>   0.2<br>10 [−1]    0.1 PDM<br>   0.05<br>   0.02<br>   0.01 t  1<br>10 [−2]<br>t 2<br>NOTES:<br>SINGLE PULSE Z � JA  (t) = r(t) x R � JA<br>10 [−3] R � JA = 160 ° C/W<br>DUTY FACTOR: D = t1 / t2<br>TJ − TA = PDM x Z � JA (t)<br>10 [−4]<br>10 [−4] 10 [−3] 10 [−2] 10 [−1] 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 12. Junction−to−Ambient Transient Thermal Response Curve<br>0.6<br>0.5<br>0.4<br>0.3<br>TJ = 85 ° C<br>0.2<br>TJ = 25 ° C<br>0.1<br>TJ = −40 ° C<br>0<br>0 15 30 45 60<br>OUTP to OUTN (V)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>, LEAKAGE CURRENT (mA)<br>ILEAKAGE<br>**----- End of picture text -----**<br>


**Figure 13. Leakage vs. Output Voltage Curve** 

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**8** 

**FDMQ8205** 

## **ORDERING INFORMATION** 

|**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Shipping**†|
|---|---|---|---|---|---|
|FDMQ8205|FDMQ8205|MLP4.5x5|13�|12 mm|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

StaGreenBridge is trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. 

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**9** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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WDFN12 5x4.5, 0.8P<br>CASE 511CS<br>ISSUE O<br>DATE 31 AUG 2016<br>**----- End of picture text -----**<br>


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5.00 A 4.45<br>0.10 C<br>2X B (0.40) 2.10(4X)<br>12 (0.25) 7<br>|<br>1.00(4X) PRReraneceteteceecatecece,PREBLEKK RK | [RRRKK RRM<br>4.50 11 RY || ESSEREevetesatecetatecetetesSY 3.50<br>PIN#1 W (0.50) a<br>4.80<br>IDENT AREA<br>Vy PSRPSS RRREG | | BOSSavetetatecetatecetetesRRRI<br>PSSSTPSR] 1| RSS BOSSI<br>OOOO | OOOO<br> (0.50)2X t<br>\ mn 0.10 C |<br>TOP VIEW 2X (0.65) 1 6<br>0.40<br>0.80<br>(12x)<br>0.80 MAX RECOMMENDED LAND PATTERN<br>0.10 C<br>(0.20)<br>LJ [ L] [] [ _ ] [J<br>0.08 C<br>0.050.00 i C a NOTES:<br>SEATING A.  PACKAGE DOES NOT FULLY CONFORM TO<br>SIDE VIEW<br>PLANE      JEDEC MO−229 REGISTRATION<br>5.00 ± 0.05 B.  DIMENSIONS ARE IN MILLIMETERS.<br>C.  DIMENSIONS AND TOLERANCES PER<br>1.95<br>1.85(4X) (0.35)4X      ASME Y14.5M, 1994.<br>1 6<br>(0.50)2X<br>PIN#1<br>IDENT 1<br>a U U ; U U Wd<br>. |<br>1 (0.50)2X<br>| + | +<br>4.50 ± 0.05 ne<br>|<br>1.05<br>0.95(4X) +|1+ 0.55<br>' 0.45<br>0.10 C A B<br>' 0.05 C<br>on t Mom oe b ess<br>12 7<br>0.80<br>0.35<br>0.25(12X)<br>2.40<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER:** 

**98AON13607G DESCRIPTION: WDFN12 5X4.5, 0.8P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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