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FDMD8540L
Dual MOSFET, N Channel, 40 V, 156 A, 0.0015 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: PQFN
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 62W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 156A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.0015ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 2.1 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## MOSFET – Dual, N-Channel, ® POWERTRENCH ## Q1: 40 V, 156 A, 1.5 m Q2: 40 V, 156 A, 1.5 m ## FDMD8540L ## **www.onsemi.com** ## **General Description** This device includes two 40 V N−Channel MOSFETs in a dual Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. ## **Features** Q1: N−Channel - Max rDS(on) = 1.5 m Q at VGS = 10 V, ID = 33 A - Max rDS(on) = 2.2 m Q at VGS = 4.5 V, ID = 26 A - Q2: N−Channel - Max rDS(on) = 1.5 m Q at VGS = 10 V, ID = 33 A - Max rDS(on) = 2.2 m Q at VGS = 4.5 V, ID = 26 A - Ideal for Flexible Layout in Primary Side of Bridge Topology - 100% UIL Tested - Kelvin High Side MOSFET Drive Pin−out Capability - This Device is Pb−Free and are RoHS Compliant ## **Applications** **==> picture [191 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> VDS rDS(ON) MAX ID MAX<br>a ee<br>40 V 1.5 m @ 10 V 156 A<br>2.2 m @ 4.5 V<br>eee<br>D2/S1<br>D2/S1<br>Pin 1<br>D2/S1<br>S2 G2<br>D1<br>D1<br>D1<br>GR Pin 1<br>G1<br>Top Bottom<br>PQFN8 5X6, 1.27P<br>Power 5 x 6<br>CASE 483AT<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** - POL Synchronous Dual - One Phase Motor Half Bridge - Half/Full Bridge Secondary Synchronous Rectification **==> picture [42 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> $Y&Z&3&K<br>FDMD<br>8540L<br>**----- End of picture text -----**<br> FDMD8540L = Specific Device Code $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code Format &K = 2−Digits Lot Run Traceability Data **==> picture [159 x 70] intentionally omitted <==** **----- Start of picture text -----**<br> G1 G2<br>GR D2/S1<br>D1 D2/S1<br>D1 D2/S1<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 9 of this data sheet. Publication Order Number: **FDMD8540L/D** **1** © Semiconductor Components Industries, LLC, 2020 **June, 2024 − Rev. 3** **FDMD8540L** **MOSFET MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) |**MOSFET MAXIMUM RATINGS**|**MOSFET MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|**MOSFET MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|**MOSFET MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|||| |---|---|---|---|---|---|---| |**Symbol**<br>~~a~~|**Parameter**|||**Q1**|**Q2**|**Unit**| |VDS<br>~~a~~|Drain to Source Voltage|||40|40|V| |VGS<br>~~a~~|Gate to Source Voltage|||±20|±20|V| |ID|Drain Current|− Continuous<br>~~po~~|TC= 25°C (Note 3)<br>~~po~~<br>~~ee~~|156<br>~~po~~|156<br>~~po~~|A| |||− Continuous<br>~~ee~~|TC= 100°C (Note 3)<br>~~ee~~<br>~~ee~~<br>~~ee~~|99<br>~~ee~~|99<br>~~ee~~|| |||− Continuous<br>~~ee~~|TA= 25°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|33 (Note 4a)<br>~~ee~~|33 (Note 4b)<br>~~ee~~|| |||− Pulsed<br>~~po~~|(Note 2)<br>~~ee~~<br>~~po~~|886<br>~~po~~|886<br>~~po~~|| |EAS<br>~~a~~<br>~~——————ee~~|Single Pulse Avalanche Energy (Note 1)<br>~~ee~~<br>~~——————ee~~|||541<br>~~ee~~<br>~~——————ee~~|541<br>~~ee~~<br>~~——————ee~~|mJ<br>~~ee~~| |PD<br>~~——————ee~~|Power Dissipation<br>~~——————ee~~||TC= 25°C<br>~~——————ee~~|62<br>~~——————ee~~|62<br>~~——————ee~~|W| ||Power Dissipation<br>~~——————ee~~<br>~~a~~||TA= 25°C<br>~~——————ee~~<br>~~a~~|2.3 (Note 4a)<br>~~——————ee~~<br>~~a~~|2.3 (Note 4b)<br>~~——————ee~~<br>~~a~~|| |TJ, TSTG<br>~~——————ee~~<br>~~a~~|Operating and Storage Junction Temperature Range<br>~~——————ee~~|||−55 to +150<br>~~——————ee~~||°C| 1. Q1: EAS of 541 mJ is based on starting TJ = 25 ° C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 59 A. Q2: EAS of 541 mJ is based on starting TJ = 25 ° C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 59 A. 2. Pulsed Id please refer to Figure 11 and Figure 24 SOA graph for more details. 3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. **THERMAL CHARACTERISTICS** ~~ee.~~ **Symbol Parameter Q1 Q2 Unit** R JC Thermal Resistance, Junction−to−Case 2.0 2.0 ° C/W ~~eePNR~~ R JA Thermal Resistance, Junction−to−Ambient ~~& X aBN ER~~ 55 (Note 4a) ~~Wh)~~ 55 (Note 4b) ~~eee WMA ee ee~~ 4. R JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R JC is guaranteed by design while R CA is determined by the user’s board design. **==> picture [400 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> a. 55 ° C/W when mounted on b. 55 ° C/W when mounted on<br>a 1 in [2] pad of 2 oz copper a 1 in [2] pad of 2 oz copper<br>c. 155 ° C/W when mounted on d. 155 ° C/W when mounted on<br>a minimum pad of 2 oz copper a minimum pad of 2 oz copper<br>nt dl<br>G DF DS SF SS G DF DS SF SS<br>G DF DS SF SS G DF DS SF SS<br>**----- End of picture text -----**<br> **==> picture [185 x 62] intentionally omitted <==** **----- Start of picture text -----**<br> d. 155 ° C/W when mounted on<br>a minimum pad of 2 oz copper<br>G DF DS SF SS<br>**----- End of picture text -----**<br> **www.onsemi.com** **2** ## **FDMD8540L** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRI**|**CAL CHARACTERISTICS**(TJ= 2|5°C unless otherwise noted)|5°C unless otherwise noted)|||||| |---|---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**||**Type**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250�A, VGS= 0 V||Q1<br>Q2|40<br>40|−<br>−|−<br>−|V| |�BVDSS<br>�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250 mA, referenced to 25°C||Q1<br>Q2|−<br>−|20<br>20|−<br>−|mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 32 V, VGS= 0 V||Q1<br>Q2|−<br>−|−<br>−|1<br>1|�A| |IGSS|Gate to Source Leakage Current|VGS=±20 V, VDS= 0 V||Q1<br>Q2|−<br>−|−<br>−|±100<br>±100|nA| |**ON CHARACTERISTICS**||||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250 mA||Q1<br>Q2|1.0<br>1.0|1.8<br>1.8|3.0<br>3.0|V| |�VGS(th)<br>�TJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250�A, referenced to 25°C||Q1<br>Q2|−<br>−|−6<br>−6|−<br>−|mV/°C| |rDS(on)|Static Drain to Source<br>On Resistance|VGS= 10 V, ID= 33 A||Q1|−|1.25|1.5|m�| |||VGS= 4.5 V, ID= 26 A|||−|1.65|2.2|| |||VGS= 10 V, ID= 33 A, TJ= 125°C|||−|1.7|2.1|| |||VGS= 10 V, ID= 33 A||Q2|−|1.25|1.5|| |||VGS= 4.5 V, ID= 26 A|||−|1.65|2.2|| |||VGS= 10 V, ID= 33 A, TJ= 125°C|||−|1.7|2.1|| |gFS|Forward Transconductance|VDD= 5 V, ID= 33 A||Q1<br>Q2|−<br>−|178<br>178|−<br>−|S| |**DYNAMIC**|**CHARACTERISTICS**|||||||| |Ciss|Input Capacitance|VDS= 20 V, VGS= 0 V<br>f = 1 MHz||Q1<br>Q2|−<br>−|5670<br>5670|7940<br>7940|pF| |Coss|Output Capacitance|||Q1<br>Q2|−<br>−|1668<br>1668|2335<br>2335|pF| |Crss|Reverse Transfer Capacitance|||Q1<br>Q2|−<br>−|75<br>75|135<br>135|pF| |Rg|Gate Resistance|||Q1<br>Q2|0.1<br>0.1|1.6<br>1.6|3.2<br>3.2|�| |**SWITCHING CHARACTERISTICS**||||||||| |td(on)|Turn−On Delay Time|VDD= 20 V, ID= 33 A<br>VGS= 10 V, RGEN= 6�||Q1<br>Q2|−<br>−|15<br>15|28<br>28|ns| |tr|Rise Time|||Q1<br>Q2|−<br>−|13<br>13|24<br>24|ns| |td(off)|Turn−Off Delay Time|||Q1<br>Q2|−<br>−|51<br>51|81<br>81|ns| |tf|Fall Time|||Q1<br>Q2|−<br>−|14<br>14|25<br>25|ns| |Qg(TOT)|Total Gate Charge|VGS= 0 V to 10 V|VDD= 20 V,<br>ID= 33 A|Q1<br>Q2|−<br>−|81<br>81|113<br>113|nC| |Qg(TOT)|Total Gate Charge|VGS= 0 V to 4.5 V|VDD= 20 V,<br>ID= 33 A|Q1<br>Q2|−<br>−|38<br>38|54<br>54|nC| |Qgs|Gate to Source Charge|VDD= 20 V, ID= 33 A||Q1<br>Q2|−<br>−|15<br>15|−<br>−|nC| |Qgd|Gate to Drain “Miller” Charge|VDD= 20 V, ID= 33 A||Q1<br>Q2|−<br>−|11<br>11|−<br>−|nC| **www.onsemi.com** **3** **FDMD8540L** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) |**ELECTRI**|**CAL CHARACTERISTICS**(TJ= 2|5°C unless otherwise noted) (continue|d)||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**|**Type**|**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |VSD|Source to Drain Diode Forward<br>Voltage|VGS= 0 V, IS= 33 A (Note 5)|Q1<br>Q2|−<br>−|0.8<br>0.8|1.3<br>1.3|V| |VSD|Source to Drain Diode Forward<br>Voltage|VGS= 0 V, IS= 2 A (Note 5)|Q1<br>Q2|−<br>−|0.7<br>0.7|1.2<br>1.2|V| |trr|Reverse Recovery Time|IF= 33 A, di/dt = 100 A/�s|Q1<br>Q2|−<br>−|54<br>54|86<br>86|ns| |Qrr|Reverse Recovery Charge||Q1<br>Q2|−<br>−|38<br>38|60<br>60|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width < 300 � s, Duty cycle < 2.0 %. ## **TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [458 x 359] intentionally omitted <==** **----- Start of picture text -----**<br> 150 6.0<br>VGS = 10 V PULSE DURATION = 80 � s<br>DUTY CYCLE = 0.5% MAX<br>120 V GS = 6 V VGS = 3.5 V<br>4.5<br>VGS = 4.5 V<br>90<br>VGS = 4 V VGS = 3.5 V 3.0<br>60 VGS = 4 V<br>1.5<br>30<br>PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX � ss VGS = 4.5 V VGS = 6 V VGS = 10 V<br>0 0.0<br>0.0 0.3 0.6 0.9 0 30 60 90 120 150<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs.<br>Drain Current and Gate Voltage<br>1.8 12<br>1.7 ID = 33 A PULSE DURATION = 80 � s<br>1.6 V GS = 10 V DUTY CYCLE = 0.5% MAX<br>1.5 9<br>1.4 ID = 33 A<br>1.3<br>6<br>1.2<br>1.1<br>1.0 3<br>0.9 TJ = 125 ° C<br>0.8 TJ = 25 ° C<br>0.7 0<br>−75 −50 −25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE ( ° C) VGS, GATE TO SOURCE VOLTAGE (V)<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON−RESISTANCE<br>) �<br> DRAIN TO<br>NORMALIZED<br>rDS(on)<br>SOURCE ON−RESISTANCE (m<br> DRAIN TO SOURCE ON−RESISTANCE<br>**----- End of picture text -----**<br> **Figure 3. Normalized On Resistance vs. Junction Temperature** **Figure 4. On−Resistance vs. Gate to Source Voltage** **www.onsemi.com** **4** **FDMD8540L** ## **TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [211 x 560] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>PULSE DURATION = 80 � s VDS = 5 V<br>DUTY CYCLE = 0.5% MAX<br>120<br>90<br>60<br>TJ = 150 ° C TJ = 25 ° C<br>30<br>TJ = −55 ° C<br>0<br>1 2 3 4 5<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 5. Transfer Characteristics<br>10<br>ID = 33 A<br>8<br>VDD = 15 V<br>6<br>VDD = 20 V VDD = 25 V<br>4<br>2<br>0<br>0 15 30 45 60 75 90<br>Qg, GATE CHARGE (nC)<br>Figure 7. Gate Charge Characteristics<br>100<br>T J = 100 ° C<br>TJ = 125 ° [o] CC TJ = 25 ° C<br>10<br>1<br>0.001 0.01 0.1 1 10 100 1000<br>tAV, TIME IN AVALANCHE (ms)<br>, DRAIN CURRENT (A)<br>ID<br>, GATE TO SOURSE VOLTAGE (V)<br>GS<br>V<br>, AVALANCHE CURRENT (A)<br>IAS<br>**----- End of picture text -----**<br> **==> picture [210 x 561] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>100 VGS = 0 V<br>10<br>1<br>TJ = 150 ° C T J = 25 ° C<br>0.1<br>0.01<br>TJ = −55 ° C<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 6. Source to Gate Diode Forward<br>Voltage vs. Source Current<br>10000<br>C iss<br>1000 Coss<br>100<br>f = 1 MHz<br>V GS = 0 V C rss<br>10<br>0.1 1 10 40<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 8. Capacitance vs. Drain to Source<br>Voltage<br>180<br>150<br>VGS = 10 V<br>120<br>90<br>VGS = 4.5 V<br>60<br>30<br>R � JC = 2.0 ° C/W<br>0<br>25 50 75 100 125 150<br>TC, CASE TEMPERATURE ( ° C)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 9. Unclamped Inductive Switching Capability** **Figure 10. Maximum Continuous Drain Current vs. Case Temperature** **www.onsemi.com** **5** **FDMD8540L** ## **TYPICAL CHARACTERISTICS (Q1 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [447 x 410] intentionally omitted <==** **----- Start of picture text -----**<br> 3000 30000<br>THIS AREA IS<br>1000 SINGLE PULSE<br>LIMITED BY rDS(on) 10000 R � JC = 2.0 ° C/W<br>100 10 � s T C = 25 ° C<br>10 100 � s 1000<br>1 ms<br>1 10 ms<br>SINGLE PULSE 100 ms/D C 100<br>TJ = MAX RATED<br>0.1 R � JC = 2.0 ° C/W CURVE BENT TO<br>TC = 25 ° C MEASURED DATA<br>0.01 10<br>0.01 0.1 1 10 100 200 10−5 10−4 10−3 10−2 10−1 1<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)<br>Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power<br>Dissipation<br>2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D = 0.5<br> 0.2<br> 0.1<br>0.1 0.05 PDM<br>0.02<br> 0.01<br>t 1<br>t2<br>0.01 NOTES:<br>SINGLE PULSE ZR �� JCJC(t=) 2.0 = r( ° tC/W) x R � JC<br>Peak T J = P DM x Z � JC (t) + T C<br>Duty Cycle, D = t 1 / t 2<br>0.001<br>10−5 10−4 10−3 10−2 10−1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 13. Junction−to−Case Transient Thermal Response Curve<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)<br>(pk)<br>P<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br> **www.onsemi.com** **6** **FDMD8540L** ## **TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [218 x 559] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>VGS = 10 V<br>120 V GS = 6 V<br>VGS = 4.5 V<br>90<br>VGS = 4 V VGS = 3.5 V<br>60<br>30<br>PULSE DURATION = 80 � s<br>DUTY CYCLE = 0.5% MAX<br>0<br>0.0 0.3 0.6 0.9<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 14. On−Region Characteristics<br>1.8<br>1.7 ID = 33 A<br>1.6 V GS = 10 V<br>1.5<br>1.4<br>1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>−75 −50 −25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 16. Normalized On Resistance<br>vs. Junction Temperature<br>150<br>PULSE DURATION = 80 � s VDS = 5 V<br>DUTY CYCLE = 0.5% MAX<br>120<br>90<br>60<br>TJ = 150 ° C TJ = 25 ° C<br>30<br>TJ = −55 ° C<br>0<br>1 2 3 4 5<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>NORMALIZED<br> DRAIN TO SOURCE ON−RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [212 x 566] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0<br>PULSE DURATION = 80 � s<br>DUTY CYCLE = 0.5% MAX<br>VGS = 3.5 V<br>4.5<br>3.0<br>VGS = 4 V<br>1.5<br>VGS = 4.5 V VGS = 6 V VGS = 10 V<br>0.0<br>0 30 60 90 120 150<br>ID, DRAIN CURRENT (A)<br>Figure 15. Normalized On−Resistance<br>vs. Drain Current and Gate Voltage<br>12<br>PULSE DURATION = 80 � s<br>DUTY CYCLE = 0.5% MAX<br>9<br>ID = 33 A<br>6<br>3<br>TJ = 125 ° C<br>TJ = 25 ° C<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 17. On−Resistance vs. Gate to<br>Source Voltage<br>300<br>100 VGS = 0 V<br>10<br>1<br>TJ = 150 ° C T J = 25 ° C<br>0.1<br>0.01<br>TJ = −55 ° C<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>NORMALIZED<br>DRAIN TO SOURCE ON−RESISTANCE<br>) �<br> DRAIN TO<br>rDS(on)<br>SOURCE ON−RESISTANCE (m<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 18. Transfer Characteristics** **Figure 19. Source to Gate Diode Forward Voltage vs. Source Current** **www.onsemi.com** **7** **FDMD8540L** ## **TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [451 x 565] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10000<br>ID = 33 A<br>C iss<br>8<br>6 VDD = 15 V 1000 Coss<br>VDD = 20 V VDD = 25 V<br>4<br>100<br>2 f = 1 MHzV GS = 0 V C rss<br>0 10<br>0 15 30 45 60 75 90 0.1 1 10 40<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain to<br>Source Voltage<br>100 180<br>150<br>T J = 100 ° C VGS = 10 V<br>120<br>TJ = 125 ° [o] CC TJ = 25 ° C<br>10 90<br>VGS = 4.5 V<br>60<br>30<br>R � JC = 2.0 ° C/W<br>1 0<br>0.001 0.01 0.1 1 10 100 1000 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( ° C)<br>Figure 22. Unclamped Inductive Figure 23. Maximum Continuous Drain<br>Switching Capability Current vs. Case Temperature<br>3000 30000<br>THIS AREA IS<br>1000 SINGLE PULSE<br>LIMITED BY r DS(on) 10000 R � JC = 2.0 ° C/W<br>100 10 � s T C = 25 ° C<br>10 100 � s 1000<br>1 ms<br>1 10 ms<br>SINGLE PULSE 100 ms/D C 100<br>TJ = MAX RATED<br>0.1 R � JC = 2.0 ° C/W CURVE BENT TO<br>TC = 25 ° C MEASURED DATA<br>0.01 10<br>0.01 0.1 1 10 100 200 10−5 10−4 10−3 10−2 10−1 1<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)<br>CAPACITANCE (pF)<br>, GATE TO SOURSE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, AVALANCHE CURRENT (A)<br>IAS<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)<br>(pk)<br>P<br>**----- End of picture text -----**<br> **Figure 24. Forward Bias Safe Operating Area** **Figure 25. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **8** **FDMD8540L** ## **TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) **==> picture [494 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D = 0.5<br> 0.2<br>0.1 0.1 0.05 PDM<br>0.02<br> 0.01<br>t 1<br>t2<br>NOTES:<br>0.01 Z � JC(t) = r(t) x R � JC<br>SINGLE PULSE R � JC = 2.0 ° C/W<br>Peak T J = P DM x Z � JC (t) + T C<br>Duty Cycle, D = t1 / t2<br>0.001<br>10−5 10−4 10−3 10−2 10−1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 26. Junction−to−Case Transient Thermal Response Curve<br>PACKAGE MARKING AND ORDERING INFORMATION<br>Device Marking Device Package Type Reel Size Tape Width Shipping [†]<br>FDMD8540L FDMD8540L PQFN8 5X6, 1.27P 13” 12 mm 3000 / Tape & Reel<br>Power 5 x 6<br>(Pb−Free)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br> †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **==> picture [42 x 70] intentionally omitted <==** **==> picture [133 x 122] intentionally omitted <==** POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. **www.onsemi.com** **9** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **PQFN8 5X6, 1.27P** CASE 483AT ISSUE B ## DATE 28 APR 2021 ## **DOCUMENT NUMBER:** ## **DESCRIPTION:** ## **98AON13668G** ## **PQFN8 5X6, 1.27P** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. - © Semiconductor Components Industries, LLC, 2016 www.onsemi.com **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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