Illustrative purposes only
FDMD8530
Dual MOSFET, Power Trench, N Channel, 30 V, 201 A, 770 µohm, PQFN, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 78W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 770µohm
- Transistor Case Style: PQFN
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 201A
- Power Dissipation N Channel: 78W
- Power Dissipation P Channel: 78W
- Gate Source Threshold Voltage Max: 1.5V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 201A
- Continuous Drain Current Id P Channel: 201A
- Drain Source On State Resistance N Channel: 770µohm
- Drain Source On State Resistance P Channel: 770µohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 1.16 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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