FDMC86160ET100

Power MOSFET, Shielded Gate, N Channel, 100 V, 43 A, 0.0112 ohm, PQFN, Surface Mount

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Manufacturer: ONSEMI
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0112ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Pow
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: PowerTrench
Qualification: -
Power Dissipation: 65W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PQFN
Drain Source Voltage Vds: 100V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 43A
Drain Source On State Resistance: 0.0112ohm
Gate Source Threshold Voltage Max: 2.9V

Delivery and price
Units per pack	1000
Price	1.01 €
Current stock	1000+
Lead time	30 days

Datasheet

Updated at April 10, 2026