FDMA3028N

## **FDMA3028N** 

## **Dual N-Channel PowerTrench[®] MOSFET 30 V, 3.8 A, 68 m** Ω 

## **Features** 

## **General Description** 

|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**<br>**30 V, 3.8 A, 68 m**Ω<br>**Features**<br>**General Description**|
|---|---|---|---|---|---|---|---|---|---|
|Max. RDS(on)= 68 mΩat  VGS= 4.5 V, ID= 3.8 A<br>Max. RDS(on)= 88 mΩat  VGS= 2.5 V, ID= 3.4 A<br>Max. RDS(on)= 123 mΩat  VGS= 1.8 V, ID= 2.9 A<br>Low profile - 0. 8 mm maximum - in the new package<br>MicroFET 2x2 mm<br>RoHS Compliant<br>This device is designed specifically as a single package solution<br>for dual switching requirements in cellular handset and other<br>ultra-portable<br>applications.<br>It<br>features<br>two independent<br>N-Channel MOSFETs with low on-state resistance for minimum<br>conduction losses. The MicroFET 2x2 package offers<br>exceptional thermal performance for its physical size and is well<br>suited to linear mode applications.<br>**G2**<br>**S1**<br>**G1**<br>**D2**<br>**D1**<br>**S2**<br>**S1**<br>**G1**<br>**D2**<br>**S2**<br>**D1**<br>**G2**<br>**PIN 1**<br>**D1**<br>**D2**<br>**1**<br>**2**<br>**3**<br>**6**<br>**5**<br>**4**<br>**Top**<br>**Bottom**<br>~~wa~~||||||||||
|**MicroFET 2x2**||||||||||
|**MOSFET Maximum Ratings  **TA= 25 °C unless otherwise noted||||||||||
|**Symbol**<br>**Parameter**||||||**Ratings**|||**Units**|
|VDS<br>Drain to Source Voltage||||||30|||V|
|VGS<br>Gate to Source Voltage||||||±12|||V|
|ID<br>Drain Current   -Continuous<br> (Note 1a)<br>-Pulsed||||||3.8<br>16|||A|
|PD<br>Power Dissipation<br> (Note 1a)<br>Power Dissipation<br> (Note 1b)||||||1.5<br>0.7|||W|
|TJ, TSTG<br>Operatingand Storage Junction Temperature Range||||||-55 to +150|||°C|
|**Thermal Characteristics**||||||||||
|Thermal Resistance for Single Operation, Junction to Ambient<br> (Note 1a)||||||86||||
|Thermal Resistance for Single Operation, Junction to Ambient<br> (Note 1b)||||||173||||
|RθJA<br>Thermal Resistance for Dual Operation, Junction to Ambient<br>(Note 1c)<br>Thermal Resistance for Dual Operation, Junction to Ambient<br>(Note 1d)||||||69<br>151|||°C/W|
|Thermal Resistance for Single Operation, Junction to Ambient          (Note 1e)||||||160||||
|Thermal Resistance for Dual Operation, Junction to Ambient<br>(Note 1f)||||||133||||
|**Package Marking and Ordering Information**||||||||||
|**Device Marking**<br>**Device**<br>**Package**<br>**Reel Size**<br>328<br>FDMA3028N<br>MicroFET 2X2<br>7 ’’<br>~~[_~~|||**Tape Width**<br>8 mm||||||**Quantity**<br>3000 units|



## **MOSFET Maximum Ratings** 

## **Thermal Characteristics** 

## **Package Marking and Ordering Information** 

2013 ON Semiconductor Components Industries,LLC August-2017.Rev3 

Product Order Number: FDMA3028N/D 

|**Electrical Characteristics**TJ= 25 °C unless otherwise noted|**Electrical Characteristics**TJ= 25 °C unless otherwise noted|**Electrical Characteristics**TJ= 25 °C unless otherwise noted|**Electrical Characteristics**TJ= 25 °C unless otherwise noted|||||
|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|**Off Characteristics**||||||||
|BVDSS||Drain to Source Breakdown Voltage|ID= 250μA, VGS= 0 V|30|||V|
|ΔBVDSS<br>ΔTJ||Breakdown Voltage Temperature<br>Coefficient|ID= 250μA, referenced to 25 °C||23||mV/°C|
|IDSS||Zero Gate Voltage Drain Current|VDS= 24 V, VGS= 0 V|||1|μA|
|IGSS||Gate to Source Leakage Current|VGS= ±12 V, VDS= 0 V|||±100|nA|
|**On Characteristics**||||||||
|VGS(th)||Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA|0.6|0.9|1.5|V|
|ΔVGS(th)<br>ΔTJ||Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250μA, referenced to 25 °C||-3||mV/°C|
|rDS(on)||Static Drain to Source On Resistance|VGS= 4.5 V, ID= 3.8 A||46|68|mΩ|
||||VGS= 2.5 V, ID= 3.4 A||56|88||
||||VGS= 1.8 V, ID= 2.9 A||80|123||
||||VGS= 4.5 V, ID= 3.8 A, TJ= 125 °C||72|108||
|gFS||Forward Transconductance|VDS= 5 V, ID= 3.8 A||15||S|
|**Dynamic Characteristics**||||||||
|Ciss||Input Capacitance|VDS= 15 V, VGS= 0 V,<br>f = 1 MHz||282|375|pF|
|Coss||Output Capacitance|||40|55|pF|
|Crss||Reverse Transfer Capacitance|||29|45|pF|
|Rg||Gate Resistance|||2.4||Ω|
|**Switching Characteristics**||||||||
|td(on)||Turn-On Delay|VDD= 15 V, ID= 3.8 A,<br>VGS= 4.5 V, RGEN= 6Ω||5.3|11|ns|
|tr||Rise Time|||3|10|ns|
|td(off)||Turn-Off Delay|||15|27|ns|
|tf||Fall Time|||2.5|10|ns|
|Qg(TOT)||Total Gate Charge|VDD= 15 V, ID= 3.8 A<br>VGS= 5 V||3.7|5.2|nC|
|Qgs||Gate to Source Charge|||0.4||nC|
|Qgd||Gate to Drain “Miller” Charge|||1||nC|
|**Drain-Source Diode Characteristics**||||||||
|VSD|Source to Drain Diode  Forward Voltage||VGS= 0 V, IS= 1.3 A<br> (Note 2)||0.7|1.2|V|
|trr|Reverse RecoveryTime||IF= 3.8 A, di/dt = 100 A/μs||12|22|ns|
|Qrr|Reverse RecoveryCharge||||3.3|10|nC|



**www.onsemi.com** 

**2** 

## **Electrical Characteristics** TJ = 25 °C unless otherwise noted 

## **Notes:** 

1. RθJA is determined with the device mounted on a 1 in[2] oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. 

   - (a) RθJA = 86 °C/W when mounted on a 1 in[2] pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. 

   - (b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. 

   - (c) RθJA  = 69[o] C/W when mounted on a 1 in[2  ] pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. 

   - (d) RθJA  = 151[o] C/W when mounted on a minimum pad of 2 oz copper. For dual operation. 

   - (e) RθJA  = 160[o] C/W when mounted on a 30mm[2] pad of 2 oz copper. For single operation. (f) RθJA  = 133[o] C/W when mounted on a 30mm[2] pad of 2 oz copper. For dual operation. 

      - a. 86 °C/W when mounted on b. 173 °C/W when mounted on a 1 in[2  ] pad of  2 oz  copper a minimum pad of 2 oz copper fle0000 oy » 

      - c. 69 °C/W when mounted on d. 151 °C/W when mounted on a 1 in[2  ] pad of  2 oz  copper a minimum pad of 2 oz copper fokeye) 

      - 00000 

      - e. 160 °C/W when mounted on f. 133 °C/W when mounted on 30mm[2  ] pad of  2 oz  copper 30mm[2] of 2 oz copper 

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 

**www.onsemi.com** 

**3** 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

**==> picture [471 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
16 2.5<br>VGS = 4.5 V PULSE DURATION = 80 μ s<br>VGS = 3.5 V VGS = 1.8 V DUTY CYCLE = 0.5%MAX<br>12 V GS  = 3 V 2.0<br>VGS =2.5 V<br>8 1.5 V GS  = 2.5 V<br>4 1.0<br>VGS = 1.8 V PULSE DURATION = 80 μ s VGS = 3 V VGS = 3.5 V VGS =  4.5 V<br>DUTY CYCLE = 0.5%MAX<br>0 0.5<br>0.0 0.5 1.0 1.5 2.0 0 4 8 12 16<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 1.  On Region Characteristics** 

**Figure 2.  Normalized On-Resistance vs. Drain Current and Gate Voltage** 

**==> picture [469 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 200<br>ID = 3.8 A<br>VGS = 4.5 V PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s<br>1.4<br>150<br>ID = 3.8 A<br>1.2<br>TJ = 125  [o] C<br>100<br>1.0<br>50<br>0.8<br>TJ = 25  [o] C<br>0.6 0<br>-75 -50 -25 0 25 50 75 100 125 150 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On  Resistance    Figure 4.   On-Resistance vs  Gate to<br>vs. Junction Temperature Source Voltage<br>16 20<br>PULSE DURATION = 80  μ s 10 VGS = 0 V<br>DUTY CYCLE = 0.5% MAX<br>12<br>VDS = 5 V 1 TJ = 150  [o] C<br>8<br>0.1 TJ = 25 [ o] C<br>TJ = 150  [o] C<br>4<br>TJ = 25  [o] C 0.01 TJ = -55  [o] C<br>TJ = -55  [o] C<br>0 0.001<br>0 1 2 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>)<br>Ω<br>m<br>(<br>DRAIN TO<br>NORMALIZED rDS(on),<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5.  Transfer Characteristics** 

**Figure 6.    Source to Drain  Diode Forward Voltage vs. Source Current** 

**www.onsemi.com** 

**4** 

**Typical Characteristics** TJ = 25°C unless otherwise noted 

**==> picture [469 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 500<br>ID = 3.8 A VDD = 10 V Ciss<br>4<br>VDD = 15 V<br>3 100<br>VDD = 20 V<br>2 C oss<br>1 C rss<br>f = 1 MHz<br>VGS = 0 V<br>0 10<br>0 1 2 3 4 0.1 1 10 30<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs.    Drain<br>to Source Voltage<br>20 100<br>10 SINGLE PULSE<br>R θ JA = 173  [o] C/W<br>100  μ s TA = 25  [o] C<br>1<br>1 ms 10<br>THIS AREA IS<br>10 ms<br>LIMITED BY r<br>DS(on)<br>0.1 SINGLE PULSE 100 ms<br>TJ = MAX RATED 1 s<br>R θ JA = 173 [ o] C/W 10 s 1<br>T A = 25  [o] C DC<br>0.010.1 1 10 100 0.510-4 10-3 10-2 10-1 1 10 100 1000<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)<br>Figure 9.  Forward Bias Safe    Figure 10.   Single-Pulse Maximum<br>Operating Area  Power  Dissipation<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>  0.2 P DM<br>  0.1<br>0.1   0.05<br>  0.02 t 1<br>  0.01 t 2<br>SINGLE PULSE NOTES:<br>DUTY FACTOR: D = t 1 /t 2<br>R θ JA = 173  [o] C/W PEAK TJ = PDM x Z θJA  x R θJA  + TA<br>0.01<br>0.00510-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>PEAK TRANSIENT POWER (W)<br>P)(PK,<br>ZJA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


**Figure 11.  Junction-to-Ambient Transient Thermal Response Curve** 

**www.onsemi.com** 

**5** 

## **Dimensional Outline and Pad Layout** 

_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ 

**www.onsemi.com** 

**6** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

❖ © Semiconductor Components Industries, LLC 

www.onsemi.com