Image not available
Illustrative purposes only
FDMA1032CZ
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Volta
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: µFET
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.4W
- Power Dissipation P Channel: 1.4W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 3.7A
- Continuous Drain Current Id P Channel: 3.7A
- Drain Source On State Resistance N Channel: 0.037ohm
- Drain Source On State Resistance P Channel: 0.037ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.206 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **FDMA1032CZ** ## **20V Complementary PowerTrench MOSFET** ## **Features** ## **General Description** Q1: N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2: P-Channel features an independent N-Channel & P-Channel –3.1 A, –20V. RDS(ON) = 95 m @ VGS = –4.5V MOSFET with low on-state resistance for minimum RDS(ON) = 141 m @ VGS = –2.5V conduction losses. The gate charge of each MOSFET Low profile – 0.8 mm maximum – in the new package is also minimized to allow high frequency switching MicroFET 2x2 mm directly from the controlling device. The MicroFET 2x2 HBM ESD protection level > 2 kV (Note 3) package offers exceptional thermal performance for its RoHS Compliant physical size and is well suited to switching applications. Free from halogenated compounds and antimony oxides **PIN 1 S1 G1 D2 S1** 1 (aN 6 **D1 D1 D2 G1** 2 5 **G2** ~~a~~ **D1 G2 S2 D2** 3 et 4 **S2 MicroFET 2x2 Absolute Maximum Ratings** TA=25[o] C unless otherwise noted **Symbol** ~~a~~ **Parameter** en **Q1 Q2 Units** VDS e Drain-Source Voltage ~~s~~ 20 –20 V VGS e Gate-Source Voltage ~~s~~ 12 ±12 V Drain Current – Continuous (Note 1a) 3.7 –3.1 A ID – Pulsed 6 –6 ~~i~~ e ~~e~~ PD Power Dissipation for Single Operation (Note 1a) 1.4 W (Note 1b) 0.7 TJ, TSTG e Operating and Storage Junction Temperature Ran ~~d~~ ge –55 to +150 C **Thermal Characteristics** R JA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) R JA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) C/W R JA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) R JA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) **Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity** 032 FDMA1032CZ 7’’ 8mm 3000 units 20 10 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDMA1032CZ/D ||**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Type Min**<br>**Typ Max Units**<br>Q1<br>Q2<br>20<br>–20<br>V<br>Q1<br>Q2<br>15<br>–12<br>mV/�C<br>Q1<br>Q2<br>1<br>–1<br>�A<br>All<br>±10<br>�A<br>Q1<br>Q2<br>0.6<br>–0.6<br>1.0<br>–1.0<br>1.5<br>–1.5<br>V<br>Q1<br>Q2<br>–4<br>4<br>mV/�C<br>Q1<br>37<br>50<br>53<br>68<br>86<br>90<br>m�<br>Q2<br>60<br>88<br>87<br>95<br>141<br>140<br>m�<br>Q1<br>Q2<br>16<br>–11<br>S<br>Q1<br>Q2<br>340<br>540<br>pF<br>Q1<br>Q2<br>80<br>120<br>pF<br>Q1<br>Q2<br>60<br>100<br>pF<br>Q1<br>Q2<br>8<br>13<br>16<br>24<br>ns<br>Q1<br>Q2<br>8<br>11<br>16<br>20<br>ns<br>Q1<br>Q2<br>14<br>37<br>26<br>59<br>ns<br>Q1<br>Q2<br>3<br>36<br>6<br>58<br>ns<br>Q1<br>Q2<br>4<br>7<br>6<br>10<br>nC<br>Q1<br>Q2<br>0.7<br>1.1<br>nC<br>Q1<br>Q2<br>1.1<br>2.4<br>nC|**Type Min**<br>**Typ Max Units**<br>Q1<br>Q2<br>20<br>–20<br>V<br>Q1<br>Q2<br>15<br>–12<br>mV/�C<br>Q1<br>Q2<br>1<br>–1<br>�A<br>All<br>±10<br>�A<br>Q1<br>Q2<br>0.6<br>–0.6<br>1.0<br>–1.0<br>1.5<br>–1.5<br>V<br>Q1<br>Q2<br>–4<br>4<br>mV/�C<br>Q1<br>37<br>50<br>53<br>68<br>86<br>90<br>m�<br>Q2<br>60<br>88<br>87<br>95<br>141<br>140<br>m�<br>Q1<br>Q2<br>16<br>–11<br>S<br>Q1<br>Q2<br>340<br>540<br>pF<br>Q1<br>Q2<br>80<br>120<br>pF<br>Q1<br>Q2<br>60<br>100<br>pF<br>Q1<br>Q2<br>8<br>13<br>16<br>24<br>ns<br>Q1<br>Q2<br>8<br>11<br>16<br>20<br>ns<br>Q1<br>Q2<br>14<br>37<br>26<br>59<br>ns<br>Q1<br>Q2<br>3<br>36<br>6<br>58<br>ns<br>Q1<br>Q2<br>4<br>7<br>6<br>10<br>nC<br>Q1<br>Q2<br>0.7<br>1.1<br>nC<br>Q1<br>Q2<br>1.1<br>2.4<br>nC|**Type Min**<br>**Typ Max Units**<br>Q1<br>Q2<br>20<br>–20<br>V<br>Q1<br>Q2<br>15<br>–12<br>mV/�C<br>Q1<br>Q2<br>1<br>–1<br>�A<br>All<br>±10<br>�A<br>Q1<br>Q2<br>0.6<br>–0.6<br>1.0<br>–1.0<br>1.5<br>–1.5<br>V<br>Q1<br>Q2<br>–4<br>4<br>mV/�C<br>Q1<br>37<br>50<br>53<br>68<br>86<br>90<br>m�<br>Q2<br>60<br>88<br>87<br>95<br>141<br>140<br>m�<br>Q1<br>Q2<br>16<br>–11<br>S<br>Q1<br>Q2<br>340<br>540<br>pF<br>Q1<br>Q2<br>80<br>120<br>pF<br>Q1<br>Q2<br>60<br>100<br>pF<br>Q1<br>Q2<br>8<br>13<br>16<br>24<br>ns<br>Q1<br>Q2<br>8<br>11<br>16<br>20<br>ns<br>Q1<br>Q2<br>14<br>37<br>26<br>59<br>ns<br>Q1<br>Q2<br>3<br>36<br>6<br>58<br>ns<br>Q1<br>Q2<br>4<br>7<br>6<br>10<br>nC<br>Q1<br>Q2<br>0.7<br>1.1<br>nC<br>Q1<br>Q2<br>1.1<br>2.4<br>nC|**Type Min**<br>**Typ Max Units**<br>Q1<br>Q2<br>20<br>–20<br>V<br>Q1<br>Q2<br>15<br>–12<br>mV/�C<br>Q1<br>Q2<br>1<br>–1<br>�A<br>All<br>±10<br>�A<br>Q1<br>Q2<br>0.6<br>–0.6<br>1.0<br>–1.0<br>1.5<br>–1.5<br>V<br>Q1<br>Q2<br>–4<br>4<br>mV/�C<br>Q1<br>37<br>50<br>53<br>68<br>86<br>90<br>m�<br>Q2<br>60<br>88<br>87<br>95<br>141<br>140<br>m�<br>Q1<br>Q2<br>16<br>–11<br>S<br>Q1<br>Q2<br>340<br>540<br>pF<br>Q1<br>Q2<br>80<br>120<br>pF<br>Q1<br>Q2<br>60<br>100<br>pF<br>Q1<br>Q2<br>8<br>13<br>16<br>24<br>ns<br>Q1<br>Q2<br>8<br>11<br>16<br>20<br>ns<br>Q1<br>Q2<br>14<br>37<br>26<br>59<br>ns<br>Q1<br>Q2<br>3<br>36<br>6<br>58<br>ns<br>Q1<br>Q2<br>4<br>7<br>6<br>10<br>nC<br>Q1<br>Q2<br>0.7<br>1.1<br>nC<br>Q1<br>Q2<br>1.1<br>2.4<br>nC|**Type Min**<br>**Typ Max Units**<br>Q1<br>Q2<br>20<br>–20<br>V<br>Q1<br>Q2<br>15<br>–12<br>mV/�C<br>Q1<br>Q2<br>1<br>–1<br>�A<br>All<br>±10<br>�A<br>Q1<br>Q2<br>0.6<br>–0.6<br>1.0<br>–1.0<br>1.5<br>–1.5<br>V<br>Q1<br>Q2<br>–4<br>4<br>mV/�C<br>Q1<br>37<br>50<br>53<br>68<br>86<br>90<br>m�<br>Q2<br>60<br>88<br>87<br>95<br>141<br>140<br>m�<br>Q1<br>Q2<br>16<br>–11<br>S<br>Q1<br>Q2<br>340<br>540<br>pF<br>Q1<br>Q2<br>80<br>120<br>pF<br>Q1<br>Q2<br>60<br>100<br>pF<br>Q1<br>Q2<br>8<br>13<br>16<br>24<br>ns<br>Q1<br>Q2<br>8<br>11<br>16<br>20<br>ns<br>Q1<br>Q2<br>14<br>37<br>26<br>59<br>ns<br>Q1<br>Q2<br>3<br>36<br>6<br>58<br>ns<br>Q1<br>Q2<br>4<br>7<br>6<br>10<br>nC<br>Q1<br>Q2<br>0.7<br>1.1<br>nC<br>Q1<br>Q2<br>1.1<br>2.4<br>nC|**Type Min**<br>**Typ Max Units**<br>Q1<br>Q2<br>20<br>–20<br>V<br>Q1<br>Q2<br>15<br>–12<br>mV/�C<br>Q1<br>Q2<br>1<br>–1<br>�A<br>All<br>±10<br>�A<br>Q1<br>Q2<br>0.6<br>–0.6<br>1.0<br>–1.0<br>1.5<br>–1.5<br>V<br>Q1<br>Q2<br>–4<br>4<br>mV/�C<br>Q1<br>37<br>50<br>53<br>68<br>86<br>90<br>m�<br>Q2<br>60<br>88<br>87<br>95<br>141<br>140<br>m�<br>Q1<br>Q2<br>16<br>–11<br>S<br>Q1<br>Q2<br>340<br>540<br>pF<br>Q1<br>Q2<br>80<br>120<br>pF<br>Q1<br>Q2<br>60<br>100<br>pF<br>Q1<br>Q2<br>8<br>13<br>16<br>24<br>ns<br>Q1<br>Q2<br>8<br>11<br>16<br>20<br>ns<br>Q1<br>Q2<br>14<br>37<br>26<br>59<br>ns<br>Q1<br>Q2<br>3<br>36<br>6<br>58<br>ns<br>Q1<br>Q2<br>4<br>7<br>6<br>10<br>nC<br>Q1<br>Q2<br>0.7<br>1.1<br>nC<br>Q1<br>Q2<br>1.1<br>2.4<br>nC| |---|---|---|---|---|---|---|---|---|---|---|---| ||**Symbol**|**Parameter**||**Test Conditions**||**Type **||**Min**||**Typ **|**Max**| ||**OffCharacteristics**||||||||||| ||BVDSS|Drain-Source Breakdown<br>Voltage||VGS= 0 V,<br>ID= 250�A<br>VGS= 0 V,<br>ID= –250�A||Q1<br>Q2||20<br>–20|||| ||�BVDSS<br>�TJ|Breakdown Voltage<br>Temperature Coefficient||ID= 250�A, Referenced to 25�C<br>ID= –250μA,Referenced to 25�C||Q1<br>Q2||||15<br>–12|| ||IDSS|Zero Gate Voltage Drain<br>Current||VDS= 16 V,<br>VGS= 0 V<br>VDS= –16 V,<br>VGS= 0 V||Q1<br>Q2|||||1<br>–1| ||IGSS|Gate-Body Leakage||VGS= ±12 V,<br>VDS= 0 V||All|||||±10| ||**On Characteristics**<br>**(Note 2)**||||||||||| ||VGS(th)|Gate Threshold Voltage|VDS= VGS,<br>ID= 250�A<br>VDS= VGS,<br>ID= –250μA|||Q1<br>Q2||0.6<br>–0.6||1.0<br>–1.0|1.5<br>–1.5| ||�VGS(th)<br>�TJ|Gate Threshold Voltage<br>Temperature Coefficient|ID= 250�A, Referenced to 25�C<br>ID= –250μA,Referenced to 25�C|||Q1<br>Q2||||–4<br>4|| ||RDS(on)|Static Drain-Source<br>On-Resistance|VGS= 4.5 V, ID= 3.7 A<br>VGS= 2.5 V, ID= 3.3 A<br>VGS= 4.5 V, ID= 3.7 A, TJ= 125�C|||Q1||||37<br>50<br>53|68<br>86<br>90| ||||VGS= –4.5V, ID= –3.1 A<br>VGS= –2.5 V, ID= –2.5 A<br>VGS= –4.5 V, ID= –3.1 A,TJ= 125�C|||Q2||||60<br>88<br>87|95<br>141<br>140| ||gFS|Forward Transconductance|VDS= 10 V,<br>ID= 3.7 A<br>VDS= –10 V,<br>ID= –3.1 A|||Q1<br>Q2||||16<br>–11|| ||**Dynamic Characteristics**||||||||||| ||Ciss|Input Capacitance|Q1<br>VDS= 10 V, VGS= 0 V, f = 1.0 MHz<br>Q2<br>VDS= –10 V, VGS= 0 V, f = 1.0 MHz|||Q1<br>Q2||||340<br>540|| ||Coss|Output Capacitance||||Q1<br>Q2||||80<br>120|| ||Crss|Reverse Transfer<br>Capacitance||||Q1<br>Q2||||60<br>100|| ||**Switching Characteristics**<br>(Note 2)||||||||||| ||td(on)<br>tr<br>td(off)<br>tf<br>Qg<br>Qgs<br>Qgd|Turn-On Delay Time|Q1<br>VDD= 10 V, ID= 1 A,<br>VGS= 4.5 V, RGEN= 6�<br>Q2<br>VDD= –10 V, ID= –1 A,<br>VGS= –4.5 V, RGEN= 6�|||Q1<br>Q2|||8<br>13||16<br>24| |||Turn-On Rise Time||||Q1<br>Q2|||8<br>11||16<br>20| |||Turn-Off Delay Time||||Q1<br>Q2|||14<br>37||26<br>59| |||Turn-Off Fall Time||||Q1<br>Q2|||3<br>36||6<br>58| |||Total Gate Charge|Q1<br>VDS= 10 V, ID= 3.7 A, VGS= 4.5 V<br>Q2<br>VDS= –10 V,ID=– 3.1 A,<br>VGS=– 4.5 V|||Q1<br>Q2|||4<br>7||6<br>10| |||Gate-Source Charge||||Q1<br>Q2|||0.7<br>1.1||| |||Gate-Drain Charge||||Q1<br>Q2|||1.1<br>2.4||| ||||||||||||| www.onsemi.com 2 ® |**Electrical Characteristics**<br>TA= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Drain–Source Diode Characteristics and Maximum Ratings**<br>IS<br>Maximum ContinuousSource-DrainDiode Forward Current<br>VSD<br>Source-DrainDiode Forward<br>Voltage<br>VGS= 0 V, IS= 1.1 A<br>(Note 2)<br>VGS= 0 V, IS= –1.1 A<br>(Note 2)<br>trr<br>Diode Reverse Recovery<br>Time<br>Qrr<br>Diode Reverse Recovery<br>Charge<br>Q1<br>IF= 3.7 A, dIF/dt = 100 A/μs<br>Q2<br>IF= –3.1 A, dIF/dt = 100 A/μs|**Type**<br>Q1<br>Q2<br>Q1<br>Q2<br>Q1<br>Q2<br>Q1<br>Q2|**Min**|**Typ Max**<br>0.7<br>–0.8<br>11<br>25<br>2<br>9|**Typ Max **<br>1.1<br>–1.1<br>1.2<br>–1.2|**Units**<br>A<br>V<br>ns<br>nC| |---|---|---|---|---|---| ## **Notes:** 1. R 8 JA is determined with the device mounted on a 1 in[2] oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R JC is guaranteed by design while R JA is determined by the user's board design. - (a) R 8 JA = 86 °C/W when mounted on a 1 in[2] pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. - (b) R 8 JA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. - (c) R ) JA = 69[o] C/W when mounted on a 1 in[2] pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. > (d) R 8 JA = 151[o] C/W when mounted on a minimum pad of 2 oz copper. For dual operation. mounted on a 1incopper.a)86[2] pad of 2 oz[o] C/W when b)173 minimum pad of 2oz copper.mounted[o] C/W whenon a c)69 pad of 2 oz copper.mounted on a 1 in[o] C/W when[2] d)151 mounted on a minimum pad of 2 oz copper.[o] C/W when ovucoo oocoocoe 00000 ooo0°o fefeleleze)eoco00 geean° 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 3 **==> picture [447 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Characteristics Q1 (N-Channel)<br>6 VGS = 4.5V 2.5V 2.0V 2<br>VGS = 2.0V<br>5 1.8<br>3.5V 3.0V<br>4 1.6<br>3 1.4<br>2.5V<br>2 1.2<br>3.0V<br>3.5V<br>1 1 4.0V 4.5V<br>1.5V<br>0 0.8<br>0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.6 0.13<br>1.5 ID = 3.7A ID = 1.85A<br>VGS = 4.5V<br>1.4 0.11<br>1.3<br>1.2 0.09<br>1.1<br>1 0.07 T A = 125 [o] C<br>0.9<br>0.8 0.05<br>0.7 TA = 25 [o] C<br>0.6 0.03<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with<br>Temperature. Gate-to-Source Voltage.<br>6 100 VGS = 0V<br>VDS = 5V<br>5 10<br>4 1<br>3 0.1<br>T A = 125 [o] C<br>2 0.01<br>TA = 125 [o] C -55 [o] C 25 [o] C<br>1 0.001 -55 [o] C<br>25 [o] C<br>0 0.0001<br>0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>, NORMALIZED<br>, DRAIN CURRENT (A)ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED FDMA1032CZ 20V Complementary PowerTrench<br>DS(ON) , ON-RESISTANCE (OHM) �<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>MOSFET<br>, DRAIN CURRENT (A)ID<br>, REVERSE DRAIN CURRENT (A)IS<br>**----- End of picture text -----**<br> ## **Typical Characteristics Q1 (N-Channel)** www.onsemi.com 4 ## **Typical Characteristics Q1 (N-Channel)** **==> picture [410 x 514] intentionally omitted <==** **----- Start of picture text -----**<br> 10 500<br>ID = 3.7A VDS = 5V 15V Vf = 1MHzGS = 0 V<br>8 400<br>10V<br>6 300<br>Ciss<br>4 200<br>Coss<br>2 100<br>Crss<br>0 0<br>0 2 4 6 8 10 0 5 10 15 20<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.<br>100 50<br>SINGLE PULSE<br>10 RDS(ON) LIMIT 100us 40 R�JAT = 173°C/WA = 25°C<br>1ms<br>10ms 30<br>100ms<br>1 1s<br>10s 20<br>DC<br>VGS = 4.5V<br>0.1 SINGLE PULSE<br>R�JA = 173°C/W 10<br>TA = 25 ° C<br>0.01 0<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power<br>Dissipation.<br>1<br>D = 0.5<br>R �JA (t) = r(t) * R �JA<br>R �JA =173 °C/W<br>0.2<br>0.1 P(pk)<br>0.1<br>0.05 t1<br>0.02 t2<br>0.01 TJ - TA = P * R�JA(t)<br>SINGLE PULSE Duty Cycle, D = t1 / t2<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 11. Transient Thermal Response Curve.<br> Thermal characterization performed using the conditions described in Note 1b.<br> Transient thermal response will change depending on the circuit board design.<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br> www.onsemi.com 5 **==> picture [447 x 583] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Characteristics: Q2 (P-Channel)<br>6 2.6<br>V4 5VGS = 2.5V VGS = -2.0V<br>5<br>2.0V 2.2<br>3.5V 3.0V<br>4<br>1.8<br>3<br>1.4 -2.5V<br>2 -3.0V<br>-3.5V -4.0V<br>1 1 -4.5V<br>1.5V<br>0 0.6<br>0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5 6<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)<br>Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.5 0.2<br>1.4 VIGSD = -3.1A = -4.5V ID = -1.55A<br>1.3 0.16<br>1.2<br>1.1 0.12<br>TA = 125 [o] C<br>1<br>0.9 0.08<br>TA = 25 [o] C<br>0.8<br>0.7 0.04<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 14. On-Resistance Variation with Figure 15. On-Resistance Variation with<br>Temperature. Gate-to-Source Voltage.<br>6 100<br>VDS = -5V VGS = 0V<br>5 10<br>4 1<br>3 0.1 T A = 125 [o] C<br>2 0.01 25 [o] C<br>TA = 125 [o] C -55 [o] C -55 [o] C<br>1 0.001<br>25 [o] C<br>0 0.0001<br>0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>, NORMALIZED<br>, DRAIN CURRENT (A)-ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED FDMA1032CZ 20V Complementary PowerTrench<br>�<br>DS(ON) , ON-RESISTANCE (OHM)<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>MOSFET<br>, DRAIN CURRENT (A)-ID<br>, REVERSE DRAIN CURRENT (A)-IS<br>**----- End of picture text -----**<br> ## **Typical Characteristics: Q2 (P-Channel)** www.onsemi.com 6 **==> picture [415 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Characteristics: Q2 (P-Channel)<br>10 1000<br>f = 1MHz<br>ID = -3.1A VGS = 0 V<br>8 800<br>VDS = -5V -15V<br>6 600<br>-10V Ciss<br>4 400<br>Coss<br>2 200<br>Crss<br>0 0<br>0 2 4 6 8 10 12 14 0 4 8 12 16 20<br>Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> **==> picture [409 x 371] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 18. Gate Charge Characteristics. Figure 19. Capacitance Characteristics.<br>100 50<br>SINGLE PULSE<br>R�JA = 173°C/W<br>40 TA = 25 ° C<br>10 RDS(ON) LIMIT 100us<br>1ms<br>10ms 30<br>100ms<br>1 1s<br>10s<br>DC 20<br>0.1 SINGLE PULSE VGS = -4.5V<br>10<br>R�JA = 173 [o] C/W<br>TA = 25 [o] C<br>0.01 0<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum<br>Power Dissipation.<br>1<br>D = 0.5<br>R �JA (t) = r(t) * R �JA<br>R �JA =173 °C/W<br>0.2<br>0.1 P(pk)<br>0.1<br>0.05 t1<br>0.02 t2<br>0.01 TJ - TA = P * R�JA(t)<br>SINGLE PULSE Duty Cycle, D = t1 / t2<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 22. Transient Thermal Response Curve.<br> Thermal characterization performed using the conditions described in Note 1c.<br> Transient thermal response will change depending on the circuit board design.<br>, DRAIN CURRENT (A)-ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br> www.onsemi.com 7 ## **Dimensional Outline and Pad Layout** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ FDMA1032CZ Rev B5 (W) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ❖ © Semiconductor Components Industries, LLC www.onsemi.com
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →