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FDG6332C

Dual MOSFET, Complementary N and P Channel, 20 V, 700 mA, 0.18 ohm, SC-70, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Dual MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • Channel Type: Complementary N and P Channel
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Complementary N and P Channel
  • Power Dissipation Pd: 300mW
  • Rds(on) Test Voltage: 4.5V
  • On Resistance Rds(on): 0.18ohm
  • Transistor Case Style: SC-70
  • Drain Source Voltage Vds: 20V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 700mA
  • Power Dissipation N Channel: 300mW
  • Power Dissipation P Channel: 300mW
  • Gate Source Threshold Voltage Max: 1.1V
  • Drain Source Voltage Vds N Channel: 20V
  • Drain Source Voltage Vds P Channel: 20V
  • Continuous Drain Current Id N Channel: 700mA
  • Continuous Drain Current Id P Channel: 700mA
  • Drain Source On State Resistance N Channel: 0.18ohm
  • Drain Source On State Resistance P Channel: 0.18ohm
Delivery and price
Units per pack 3000
Price 0.179 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet