FDG6332C-F085

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FDG6332C_F085<br>20V N & P-Channel PowerTrench []  MOSFETs<br>Features General Description<br>• Q1     0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V The N & P-Channel MOSFETs are produced usingFairchild Semiconductor’s advanced PowerTrench<br>RDS(ON) = 400 mΩ @ VGS = 2.5 V process that has been especially tailored to minimize<br>on-state resistance and yet maintain superior<br>• Q2     –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V switching performance.<br>RDS(ON) = 630 mΩ @ VGS = –2.5 V<br>These devices have been designed to offer<br>• Low gate charge exceptional power dissipation in a very small footprint<br>for applications where the bigger more expensive<br>• High performance trench technology for extremely TSSOP-8 and SSOP-6 packages are impractical.<br>low RDS(ON) Applications<br>• SC70-6 package: small footprint (51% smaller than • DC/DC converter<br>SSOT-6); low profile (1mm thick) • Load switch<br>• Qualified to AEC Q101 RO HS • LCD display inverter<br>• RoHS Compliant N KS<br>re<br>):2<br>y<br>@ Co<br>C, r<br>S<br>G<br>1 6<br>D<br>2 5<br>D<br>G<br>Pin 1 S 3 4<br>“ SC70-6 fa<br>Complementary<br>Absolute Maximum Ratings TA=25 [o] C unless otherwise noted<br>Symbol Parameter Q1 Q2 Units<br>VDSS Drain-Source Voltage 20 –20 V<br>VGSS Gate-Source Voltage ±12 ±12 V<br>ID Drain Current – Continuous (Note 1) 0.7 –0.6 A<br>– Pulsed 2.1 –2<br>PD Power Dissipation for Single Operation (Note 1) 0.3 W<br>TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C<br>Thermal Characteristics<br>RθJA Thermal Resistance, Junction-to-Ambient  (Note 1) 415 °C/W<br>Package Marking and Ordering Information<br>Device Marking Device Reel Size Tape width Quantity<br>.32  FDG6332C_F085 7’’  8mm  3000 units<br>**----- End of picture text -----**<br>


2009 Fairchild Semiconductor Corporation 

FDG6332C_F085  Rev C2 (W) 

|||**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**|TA= 25°C unless otherwise noted|TA= 25°C unless otherwise noted||||**Units**<br>V<br>mV/°C<br>µA<br>nA<br>nA<br>V<br>mV/°C<br>mΩ<br>S<br>A<br>pF<br>pF<br>pF<br>ns<br>ns<br>ns<br>ns<br>nC<br>nC<br>nC|
|---|---|---|---|---|---|---|---|---|---|---|
|||**Symbol**|**Parameter**||**Test Conditions**||**Min**|**Typ**|**Max**||
|||**Off Characteristics**|||||||||
|||BVDSS|Drain–Source Breakdown Voltage||VGS= 0 V,<br>ID= 250µA<br>VGS=0V,<br>ID= –250 µA|**Q1**<br>**Q2**|20<br>–20||||
|||∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coefficient||ID= 250µA,Ref. to 25°C<br>ID= –250 µA,Ref.to25°C|**Q1**<br>**Q2**||14<br>–14|||
|||IDSS|Zero Gate Voltage Drain Current||VDS=   16 V,<br>VGS= 0 V<br>VDS= –16 V,<br>VGS= 0 V|**Q1**<br>**Q2**|||1<br>–1||
|||IGSSF/IGSSR|Gate–BodyLeakage,Forward||VGS=±12 V, VDS=0V||||±100||
|||IGSSF/IGSSR|Gate–BodyLeakage,Reverse||VGS=±12V, VDS=0V||||±100||
|||**On Characteristics**<br>**(Note 2)**|||||||||
|||VGS(th)|Gate Threshold Voltage|**Q1**|VDS= VGS, ID= 250µA||0.6|1.1|1.5||
|||||**Q2**|VDS= VGS, ID= –250µA||-0.6|–1.2|–1.5||
|||∆VGS(th)<br>∆TJ|Gate Threshold Voltage<br>Temperature Coefficient|**Q1**<br>**Q2**|ID= 250µA,Ref. To 25°C<br>ID= –250µA,Ref. to 25°C|||–2.8<br>3|||
|||RDS(on)|Static Drain–Source<br>On–Resistance|**Q1**|VGS= 4.5 V, ID=0.7 A<br>VGS= 2.5 V, ID=0.6 A<br>VGS= 4.5 V, ID=0.7A,TJ=125°C|||180<br>293<br>247|300<br>400<br>442||
|||||**Q2**|VGS= –4.5 V, ID= –0.6 A<br>VGS= –2.5 V, ID= –0.5 A<br>VGS=–4.5 V, ID=–0.6 A,TJ=125°C|||300<br>470<br>400|420<br>630<br>700||
|||gFS|Forward Transconductance|**Q1**|VDS= 5 V<br>ID= 0.7 A|||2.8|||
|||||**Q2**|VDS= –5 V<br>ID=  –0.6A|||1.8|||
|||ID(on)|On–State Drain Current|**Q1**|VGS= 4.5 V, VDS= 5 V||1||||
|||||**Q2**|VGS= –4.5 V, VDS= –5 V||–2||||
|||**Dynamic Characteristics**|||||||||
|||Ciss|Input Capacitance|**Q1**|VDS=10 V,VGS= 0 V,f=1.0MHz|||113|||
|||||**Q2**|VDS=–10 V, VGS= 0 V, f=1.0MHz|||114|||
|||Coss|Output Capacitance|**Q1**|VDS=10 V, VGS= 0 V, f=1.0MHz|||34|||
|||||**Q2**|VDS=–10 V, VGS= 0 V, f=1.0MHz|||24|||
|||Crss|Reverse Transfer Capacitance|**Q1**|VDS=10 V, VGS= 0 V, f=1.0MHz|||16|||
|||||**Q2**|VDS=–10 V, VGS= 0 V, f=1.0MHz|||9|||
|||**Switching Characteristics**<br>**(Note 2)**|||||||||
|||td(on)|Turn–On Delay Time|**Q1**|For**Q1**:<br>VDS=10 V,<br>ID= 1 A<br>VGS= 4.5 V,<br>RGEN= 6Ω<br>For**Q2**:<br>VDS=–10 V,<br>ID= –1 A<br>VGS= –4.5 V, RGEN= 6Ω|||5|10||
|||||**Q2**||||5.5|11||
|||tr|Turn–On Rise Time|**Q1**||||7|15||
|||||**Q2**||||14|25||
|||td(off)|Turn–Off Delay Time|**Q1**||||9|18||
|||||**Q2**||||6|12||
|||tf|Turn–Off Fall Time|**Q1**||||1.5|3||
|||||**Q2**||||1.7|3.4||
|||Qg|Total Gate Charge|**Q1**|For**Q1**:<br>VDS=10 V,<br>ID= 0.7 A<br>VGS= 4.5 V,<br>RGEN= 6Ω<br>For**Q2**:<br>VDS=–10 V,    ID= –0.6 A<br>VGS= –4.5 V,  RGEN= 6Ω|||1.1|1.5||
|||||**Q2**||||1.4|2||
|||Qgs|Gate–Source Charge|**Q1**||||0.24|||
|||||**Q2**||||0.3|||
|||Qgd|Gate–Drain Charge|**Q1**||||0.3|||
|||||**Q2**||||0.4|||
||||||||||||



FDG6332C_F085 Rev C2  (W) 

|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Test Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**Drain–Source Diode Characteristics and Maximum Ratings**|||||||||
|IS|Maximum Continuous Drain–Source Diode Forward Current|||**Q1**|||0.25|A|
|||||**Q2**|||–0.25||
|VSD|Drain–Source Diode Forward<br>Voltage|**Q1**|VGS= 0 V, IS= 0.25 A<br>(Note 2)|||0.74|1.2|V|
|||**Q2**|VGS= 0 V, IS= –0.25 A<br>(Note 2)|||–0.77|–1.2||



## **Notes:** 

**1.** RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.  RθJC is guaranteed by design while RθJA is determined by the user's board design.  RθJA  = 415°C/W when mounted on a minimum pad of FR-4 PCB in a still air environment. 

**2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 

FDG6332C_F085 Rev C2  (W) 

## **Typical Characteristics: N-Channel** 

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4 1.8<br>VGS=4.5V 3.0V<br>3.5V 1.6<br>3 2.5V<br>VGS = 2.5V<br>1.4<br>2<br>3.0V<br>1.2<br>3.5V<br>2.0V 4.0V<br>1 4.5V<br>1<br>0 0.8<br>0 1 2 3 4 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.6 0.8<br>ID =0.7A<br>VGS = 4.5V ID =0.4A<br>1.4<br>0.6<br>1.2 TA = 125 [o] C<br>0.4<br>1 TA = 25 [o] C<br>0.2<br>0.8<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 1 2 3 4 5<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with<br>Temperature. Gate-to-Source Voltage.<br>2.5 10<br>VDS = 5V TA = -55 [o] C 25 [o] C VGS = 0V<br>2 1<br>125 [o] C TA = 125 [o] C<br>1.5 0.1 25 [o] C<br>-55 [o] C<br>1 0.01<br>0.5 0.001<br>0 0.0001<br>0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>, NORMALIZED<br>, DRAIN CURRENT (A)ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>DS(ON) , ON-RESISTANCE (OHM)<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)ID<br>, REVERSE DRAIN CURRENT (A)IS<br>**----- End of picture text -----**<br>


FDG6332C_F085 Rev C2  (W) 

## **Typical Characteristics: N-Channel** 

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5 200<br>ID = 0.7A VDS = 5V 10V Vf = 1MHzGS = 0 V<br>4<br>15V 150<br>CISS<br>3<br>100<br>2<br>COSS<br>50<br>1<br>CRSS<br>0 0<br>0 0.4 0.8 1.2 1.6 0 5 10 15 20<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Gate Charge Characteristics.** 

**Figure 8. Capacitance Characteristics.** 

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10 10<br>SINGLE PULSE<br>R DS(ON)  LIMIT 1ms100µs 8 RθJA T  = 415°C/WA  = 25°C<br>1<br>10ms<br>6<br>100ms<br>1s<br>VGS = 4.5V DC 4<br>0.1 SINGLE PULSE<br>RθJA = 415 [o] C/W<br>TA = 25 [o] C 2<br>0.01 0<br>0.1 1 10 100 0.001 0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area.** 

**Figure 10. Single Pulse Maximum Power Dissipation.** 

FDG6332C_F085 Rev C2  (W) 

## **Typical Characteristics: P-Channel** 

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2 1.8<br>VGS = -4.5V -3.0V<br>-3.5V VGS = -2.5V<br>1.6 -2.5V 1.6<br>1.2 1.4<br>-3.0V<br>0.8 1.2 -3.5V<br>-2.0V -4.0V<br>-4.5V<br>0.4 1<br>0 0.8<br>0 1 2 3 4 0 0.5 1 1.5 2<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)<br>Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.4 1.2<br>1.3 VIGSD = -0.6A = -4.5V 1 ID = -0.3 A<br>1.2<br>1.1 0.8<br>TA = 125 [o] C<br>1<br>0.6<br>0.9 TA = 25 [o] C<br>0.4<br>0.8<br>0.7 0.2<br>-50 -25 0 25 50 75 100 125 150 1 2 3 4 5<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with<br>Temperature. Gate-to-Source Voltage.<br>2 10<br>VDS = -5V TA = -55 [o] C 25 [o] C VGS = 0V<br>125 [o] C 1<br>1.5<br>T A  = 125 [o] C<br>0.1<br>1 25 [o] C<br>0.01<br>-55 [o] C<br>0.5<br>0.001<br>0 0.0001<br>0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>, NORMALIZED<br>, DRAIN CURRENT (A)-ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>DS(ON) , ON-RESISTANCE (OHM)<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)-ID<br>, REVERSE DRAIN CURRENT (A)-IS<br>**----- End of picture text -----**<br>


FDG6332C_F085 Rev C2  (W) 

## **Typical Characteristics: P-Channel** 

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5 160<br>ID = -0.6A VDS = -5V -10V f = 1MHz<br>VGS = 0 V<br>4<br>120<br>-15V<br>CISS<br>3<br>80<br>2<br>COSS<br>40<br>1<br>CRSS<br>0 0<br>0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 10 15 20<br>Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.<br>10 10<br>SINGLE PULSE<br>R DS(ON)  LIMIT 100µs 8 RθJAT = 415A = 25 [o] oCC/W<br>1ms<br>1<br>10ms 6<br>100ms<br>1s 4<br>0.1 V GS  = -4.5V DC<br>SINGLE PULSE<br>RθJA = 415 [o] C/W 2<br>T A  = 25 [o] C<br>0.01<br>0<br>0.1 1 10 100<br>0.001 0.01 0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>SINGLE PULSE TIME (SEC)<br>Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum<br>Power Dissipation.<br>1<br>D = 0.5 R θ JA(t) = r(t) * R θ JA<br>0.2 R θJA  = 415 °C/W<br>0.1<br>0.1 0.05 P(pk)<br>0.02 t1<br>0.01 t2<br>0.01 TJ - TA = P * RθJA(t)<br>SINGLE PULSE Duty Cycle, D = t1 / t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100<br>t1, TIME (sec)<br>Figure 21. Transient Thermal Response Curve.<br>Thermal characterization performed using the conditions described in Note 1.<br>Transient thermal response will change depending on the circuit board design.<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>POWER (W)<br>, DRAIN CURRENT (A)-ID<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


FDG6332C_F085 Rev C2  (W) 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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