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FDD7N60NZTM

Power MOSFET, N Channel, 600 V, 5.5 A, 1.05 ohm, TO-251AA, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Product Range: UniFET II
  • Power Dissipation: 90W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 90W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 1.05ohm
  • Transistor Case Style: TO-251AA
  • Drain Source Voltage Vds: 600V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 5.5A
  • Drain Source On State Resistance: 1.05ohm
  • Gate Source Threshold Voltage Max: 5V
Delivery and price
Units per pack 7500
Price 0.404 €
Current stock 2678
Lead time 7 days
PDF File icon Datasheet