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FDD4N60NZ

Power MOSFET, N Channel, 600 V, 3.4 A, 1.9 ohm, TO-252 (DPAK), Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Product Range: UniFET II
  • Power Dissipation: 114W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 114W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 1.9ohm
  • Transistor Case Style: TO-252 (DPAK)
  • Drain Source Voltage Vds: 600V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 3.4A
  • Drain Source On State Resistance: 1.9ohm
  • Gate Source Threshold Voltage Max: 5V
Delivery and price
Units per pack 500
Price 0.505 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet