Image not available
Illustrative purposes only
FDD3510H
Dual MOSFET, Complementary N and P Channel, 80 V, 80 V, 13.9 A, 13.9 A, 0.08 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:13.9A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 5Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 3.1W
- Power Dissipation P Channel: 3.1W
- Drain Source Voltage Vds N Channel: 80V
- Drain Source Voltage Vds P Channel: 80V
- Continuous Drain Current Id N Channel: 13.9A
- Continuous Drain Current Id P Channel: 13.9A
- Drain Source On State Resistance N Channel: 0.08ohm
- Drain Source On State Resistance P Channel: 0.19ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.594 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
|
|---|
Updated at March 22, 2026