Illustrative purposes only
FDD3510H
Dual MOSFET, Complementary N and P Channel, 80 V, 13.9 A, 0.08 ohm, TO-252 (DPAK), Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 5Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 3.1W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.08ohm
- Transistor Case Style: TO-252 (DPAK)
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 13.9A
- Power Dissipation N Channel: 3.1W
- Power Dissipation P Channel: 3.1W
- Gate Source Threshold Voltage Max: 2.6V
- Drain Source Voltage Vds N Channel: 80V
- Drain Source Voltage Vds P Channel: 80V
- Continuous Drain Current Id N Channel: 13.9A
- Continuous Drain Current Id P Channel: 13.9A
- Drain Source On State Resistance N Channel: 0.08ohm
- Drain Source On State Resistance P Channel: 0.08ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.663 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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