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FDD3510H
Dual MOSFET, Complementary N and P Channel, 80 V, 80 V, 13.9 A, 13.9 A, 0.08 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:13.9A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 5Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 3.1W
- Power Dissipation P Channel: 3.1W
- Drain Source Voltage Vds N Channel: 80V
- Drain Source Voltage Vds P Channel: 80V
- Continuous Drain Current Id N Channel: 13.9A
- Continuous Drain Current Id P Channel: 13.9A
- Drain Source On State Resistance N Channel: 0.08ohm
- Drain Source On State Resistance P Channel: 0.19ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.594 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **FDD3510H** ## **Dual N & P-Channel PowerTrench[®] MOSFET** **N-Channel: 80V, 13.9A, 80m** Ω **P-Channel: -80V, -9.4A, 190m** Ω ## **Features** Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A ## Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant ## **General Description** These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench **[®]** process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. ## **Applications** **==> picture [28 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Inverter<br>**----- End of picture text -----**<br> ## H-Bridge **==> picture [343 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>D1/D2<br>G1 G2<br>G2<br>S2<br>G1<br>S1 S1 S2<br>Dual DPAK 4L N-Channel P-Channel<br>**----- End of picture text -----**<br> ## **MOSFET Maximum Ratings** TC = 25°C unless otherwise noted |**MOSFET Maximum Ratings **TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted|TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted||||||||| |---|---|---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|||**Q1**||**Q2**||**Units**|| |VDS<br>Drain to Source Voltage||||80||-80||V|| |VGS<br>Gate to Source Voltage||||±20||±20||V|| |Drain Current - Continuous|TC= 25°C|||13.9||-9.4|||| |ID<br>- Continuous|TA= 25°C|||4.3||-2.8||A|| |- Pulsed||||20||-10|||| |Power Dissipation for Single Operation<br>TC= 25°C (Note 1)||= 25°C (Note 1)||35|||32||| |PD|TA= 25°C (Note 1a)|= 25°C (Note 1a)|||3.1|||W|| ||TA= 25°C (Note 1b)|= 25°C (Note 1b)|||1.3||||| |EAS<br>Single Pulse Avalanche Energy||(Note 3)||37|||54|mJ|| |TJ, TSTG<br>Operating and Storage Junction Temperature Range||||-55 to +150|-55 to +150|-55 to +150||°C|| |**Thermal Characteristics**|||||||||| |**Package Marking and Ordering Information**<br>RθJC<br>Thermal Resistance, Junction to Case, Single Operation for Q1<br>(Note 1)<br>3.5<br>°C/W<br>RθJC<br>Thermal Resistance, Junction to Case, Single Operation for Q2<br> (Note 1)<br>3.9<br>~~sr~~<br>~~_d~~|||||||||| |**Device Marking**<br>**Device**<br>FDD3510H<br>FDD3510H<br>~~**e**S~~|**Package**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>TO-252-4L<br>13”<br>16mm<br>2500 units<br>~~e~~<br>~~ee ee~~||||||||| |©2008Semiconductor Components Industries, LLC.|**1**|||||Publication Order Number:|||| ©2008 Semiconductor Components Industries, LLC. October-2017, Rev. 2 FDD3510H/D ## **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**| |---|---|---|---|---|---|---|---| |**Off Characteristics**|||||||| |BVDSS|Drain to Source Breakdown Voltage|ID=250µA, VGS= 0V<br>ID= -250µA, VGS= 0V|Q1<br>Q2|80<br>-80|||V| |∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250µA, referenced to 25°C<br>ID= -250µA, referenced to 25°C|Q1<br>Q2||84<br>-67|mV|/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 64V, VGS= 0V<br>VDS= -64V, VGS= 0V|Q1<br>Q2|||1<br>-1|µA| |IGSS|Gate to Source Leakage Current|VGS= ±20V, VDS= 0V|Q1<br>Q2|||±100<br>±100|nA<br>nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250µA<br>VGS= VDS, ID= -250µA|Q1<br>Q2|2.0<br>-1.0|2.6<br>-1.6|4.0<br>-3.0|V| |∆VGS(th)<br>∆TJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250µA, referenced to 25°C<br>ID= -250µA, referenced to 25°C|Q1<br>Q2||-6.7<br>4.6|mV/|°C| |rDS(on)|Static Drain to Source On Resistance|VGS= 10V, ID= 4.3A<br>VGS= 6.0V, ID= 4.1A<br>VGS= 10V, ID= 4.3A, TJ= 125°C|Q1||64<br>70<br>121|80<br>88<br>152|mΩ| |||VGS= -10V, ID= -2.8A<br>VGS= -4.5V, ID= -2.6A<br>VGS= -10V, ID= -2.8A, TJ= 125°C|Q2||153<br>184<br>259|190<br>224<br>322|| |gFS|Forward Transconductance|VDD= 10V, ID= 4.3A<br>VDD= -5V, ID= -2.8A|Q1<br>Q2||15<br>6.8||S| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|Q1<br>VDS= 40V, VGS= 0V, f = 1MHZ<br>Q2<br>VDS= -40V, VGS= 0V, f = 1MHZ|Q1<br>Q2||600<br>660|800<br>880|pF| |Coss|Output Capacitance||Q1<br>Q2||56<br>50|75<br>70|pF| |Crss|Reverse Transfer Capacitance||Q1<br>Q2||27<br>25|41<br>40|pF| |Rg|Gate Resistance|f = 1MHz|Q1<br>Q2||1.7<br>7.2||Ω| |**Switching Characteristics**|||||||| |td(on)|Turn-On Delay Time|Q1<br>VDD= 40V, ID= 4.3A,<br>VGS= 10V, RGEN= 6Ω<br>Q2<br>VDD= -40V, ID= -2.8A,<br>VGS= -10V, RGEN= 6Ω|Q1<br>Q2||7<br>6|13<br>11|ns| |tr|Rise Time||Q1<br>Q2||2<br>3|10<br>10|ns| |td(off)|Turn-Off Delay Time||Q1<br>Q2||16<br>25|29<br>40|ns| |tf|Fall Time||Q1<br>Q2||2<br>5|10<br>10|ns| |Qg(TOT)|Total Gate Charge|Q1<br>VGS= 10V, VDD= 40V, ID= 4.3A<br>Q2<br>VGS= -10V, VDD= -40V, ID= -2.8A|Q1<br>Q2||13<br>14|18<br>20|nC| |Qgs|Gate to Source Charge||Q1<br>Q2||2.3<br>1.9||nC| |Qgd|Gate to Drain “Miller” Charge||Q1<br>Q2||3.2<br>2.9||nC| **www.onsemi.com** **2** ## **Electrical Characteristics** TJ = 25°C unless otherwise noted |VSD|Source to Drain Diode Forward Voltage|VGS= 0V, IS= 2.6A (Note 2)<br>VGS= 0V, IS= -2.6A<br> (Note 2)|Q1<br>Q2||0.8<br>-0.8|1.2<br>-1.2|V| |---|---|---|---|---|---|---|---| |trr|Reverse Recovery Time|Q1<br>IF= 4.3A, di/dt = 100A/s<br>Q2<br>IF= -2.8A, di/dt = 100A/s|Q1<br>Q2||29<br>30|46<br>48|ns| |Qrr|Reverse Recovery Charge||Q1<br>Q2||28<br>30|45<br>48|nC| ## **Notes:** **1.** Rθ **JA** is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. Rθ **JC** is guaranteed by design while Rθ **CA** is determined by the user's board design. **==> picture [392 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> b. 96°C/W when mounted on a<br>Q1 a. 40°C/W when mounted on<br>a 1 in [2 ] pad of 2 oz copper minimum pad of 2 oz copper<br>jelelelele<br> Scale 1 : 1 on letter size paper<br>ao0000 Y<br>o0000<br>a. 40°C/W when mounted on<br>Q2 a 1 in [2 ] pad of 2 oz copper b. 96°C/W when mounted on a<br>minimum pad of 2 oz copper<br>ooo0°0<br> Scale 1 : 1 on letter size paper<br>**----- End of picture text -----**<br> 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V. **www.onsemi.com** **3** ## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted **==> picture [457 x 568] intentionally omitted <==** **----- Start of picture text -----**<br> 20 4.0<br>VGS = 10V VGS = 6V VGS = 4.5V 3.5 VGS = 3.5V PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s<br>15<br>3.0<br>PULSE DURATION = X µ s VGS = 4V<br>DUTY CYCLE = X%MAX 2.5<br>10 VGS = 4.5V<br>2.0<br>VGS = 4V<br>VGS = 6V<br>1.5<br>5<br>VGS = 3.5V 1.0 VGS = 10V<br>0 0.5<br>0 1 2 3 4 0 5 10 15 20<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>2.2 300<br>2.0 IVDGS = 4.3A = 10V ID = 4.3A PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s<br>1.8<br>1.6 200<br>1.4<br>1.2 TJ = 125 [o] C<br>1.0 100<br>0.8<br>0.6 TJ = 25 [o] C<br>0.4 0<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to<br>vs Junction Temperature Source Voltage<br>20 20<br>PULSE DURATION = 80 µ s 10 VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>15<br>VDS = 5V 1 TJ = 150 [o] C<br>TJ = 25 [o] C<br>10<br>0.1<br>TJ = 150 [o] C<br>TJ = 25 [o] C<br>5 0.01 TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>DRAIN TO<br>NORMALIZED rDS(on),<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **www.onsemi.com** **4** ## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted **==> picture [464 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1000<br>ID = 4.3A<br>8 Ciss<br>VDD = 40V<br>6<br>VDD = 30V VDD = 50V 100 Coss<br>4<br>2 f = 1MHz<br>VGS = 0V Crss<br>0 10<br>0 2 4 6 8 10 12 14 0.1 1 10 100<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain<br>to Source Voltage<br>5 15<br>4<br>12<br>3 VGS = 10V<br>TJ = 25 [o] C 9<br>VGS = 6V<br>2<br>6<br>TJ = 125 [o] C<br>3<br>R θ JC = 3.5oC/W<br>1 0<br>0.01 0.1 1 10 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE (oC)<br>Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain<br>Switching Capability Current vs Case Temperature<br>50 105<br>VGS = 10V<br>10 104<br>100us<br>THIS AREA IS 103 SINGLE PULSE<br>1 LIMITED BY rDS(on) R θ JC = 3.5 [o] C/W<br>SINGLE PULSE 1ms TC = 25 [o] C<br>TJ = MAX RATED 10ms 102<br>R θ JC = 3.5 [o] C/W 100ms<br>0.1 TC = 25 [o] C DC<br>0.05 10<br>0.5 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 1<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)<br>Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum<br>Operating Area Power Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>DRAIN CURRENT (A)<br>,<br>ID<br>, AVALANCHE CURRENT(A)<br>IAS<br>, DRAIN CURRENT (A)<br>ID<br>PEAK TRANSIENT POWER (W)<br>P)(PK,<br>**----- End of picture text -----**<br> **www.onsemi.com** **5** **==> picture [470 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted<br>2<br>1<br>DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br> 0.2<br>0.1 0.1 0.05 PDM<br> 0.02<br> 0.01<br>t1<br>0.01 t2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>R θ JC = 3.5 [o] C/W PEAK TJ = PDM x Z θJC x R θJc + TC<br>0.001<br>10-6 10-5 10-4 10-3 10-2 10-1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 13. Transient Thermal Response Curve<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br> 0.2<br> 0.1<br>0.1<br> 0.05<br> 0.02 PDM<br> 0.01<br>t1<br>0.01 SINGLE PULSE t2<br>R(Note 1b θ JA = 96) [o] C/W NOTES:DUTY FACTOR: D = tPEAK TJ = PDM x Z θJA 1 x R/t2 θJA + TA<br>0.001<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 14. Transient Thermal Response Curve<br>ZJC θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br> **www.onsemi.com** **6** ## **Typical Characteristics (Q2 P-Channel)** TJ = 25°C unless otherwise noted **==> picture [468 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2.5<br>VGS = -10V VGS = -4.5V VGS = -2.5V<br>8 VGS = -3.5V 2.0 VGS = -3V<br>6 PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s VGS = -3.5V<br>1.5<br>4<br>VGS = -3V VGS = -4.5V<br>1.0<br>2 PULSE DURATION = 80 µ s VGS = -10V<br>VGS = -2.5V DUTY CYCLE = 0.5%MAX<br>0 0.5<br>0 1 2 3 4 5 0 2 4 6 8 10<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain<br>Current and Gate Voltage<br>2.0 600<br>1.8 VIDGS = -2.8A = -10V ID = -2.8A PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s<br>500<br>1.6<br>1.4<br>400<br>1.2<br>TJ = 125 [o] C<br>1.0 300<br>0.8<br>200<br>0.6<br>0.4 100 TJ = 25 [o] C<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 17. Normalized On-Resistance Figure 18. On-Resistance vs Gate to<br> vs Junction Temperature Source Voltage<br>10 10<br>PULSE DURATION = 80 µ s VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>8<br>VDS = -5V 1<br>6 TJ = 150 [o] C<br>0.1 TJ = 25 [o] C<br>4<br>TJ = 150 [o] C<br>0.01<br>2<br>TJ = 25 [o] C TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode<br> Forward Voltage vs Source Current<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>DRAIN TO<br>,<br>NORMALIZED<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>-I , REVERSE DRAIN CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br> **www.onsemi.com** **7** ## **Typical Characteristics (Q2 P-Channel)** TJ = 25°C unless otherwise noted **==> picture [471 x 363] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1000<br>ID = -2.8A<br>8 Ciss<br>VDD = -40V<br>6<br>VDD = -30V VDD = -50V 100 Coss<br>4<br>2 f = 1MHz<br>VGS = 0V Crss<br>0 10<br>0 2 4 6 8 10 12 14 16 0.1 1 10 100<br>Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 21. Gate Charge Characteristics Figure 22. Capacitance vs Drain<br>to Source Voltage<br>4 10<br>3 8<br>VGS = -10V<br>TJ = 25 [o] C 6<br>2 VGS = -4.5V<br>4<br>TJ = 125 [o] C 2<br>R θ JC = 3.9 [o] C/W<br>1 0<br>0.1 1 10 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( [o] C)<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>, AVALANCHE CURRENT(A)<br>IAS-<br>**----- End of picture text -----**<br> **Figure 23. Unclamped Inductive Switching Capability** **==> picture [227 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>10<br>100us<br>1ms<br>1 THIS AREA IS<br>LIMITED BY rds(on)<br>10ms<br>SINGLE PULSE<br>TJ = MAX RATED 100ms<br>0.1 R θ JC = 3.9 [o] C/W DC<br>TC = 25 [o] C<br>0.05<br>1 10 100 200<br>-VDS, DRAIN to SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br> **Figure 25. Forward Bias Safe Operating Area** **Figure 24. Maximum Continuous Drain Current vs Case Temperature** **==> picture [226 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 20000<br>10000 VGS = -10V<br>FOR TEMPERATURES<br>ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>SINGLE PULSE<br>X – T<br>1000 I = I25 R θ JC = 3.9 ------------------- 125 [o] C/W x<br>TX = 25 [o] C<br>100<br>10<br>10-6 10-5 10-4 10-3 10-2 10-1 1<br>t, PULSE WIDTH (s)<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br> **Figure 26. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **8** **==> picture [470 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted<br>2<br>1<br>DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br> 0.2<br>0.1 0.1 PDM<br> 0.05<br> 0.02<br> 0.01 t1<br>0.01 t2<br>NOTES:<br>DUTY FACTOR: D = t1/t2<br>SINGLE PULSE PEAK TJ = PDM x Z θJC x R θJC + TC<br>R θ JC = 3.9 [o] C/W<br>0.001<br>10-6 10-5 10-4 10-3 10-2 10-1 1<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 27. Transient Thermal Response Curve<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br> 0.2<br> 0.1<br>0.1<br> 0.05<br> 0.02 PDM<br> 0.01<br>t1<br>0.01 SINGLE PULSE t2<br>R θ JA = 96 [o] C/W NOTES:DUTY FACTOR: D = t1/t2<br>(Note 1b) PEAK TJ = PDM x Z θJA x R θJA + TA<br>0.001<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>IMPEDANCE, ZJC θ<br>NORMALIZED THERMAL<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br> **Figure 28. Transient Thermal Response Curve** **www.onsemi.com** **9** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ❖ © Semiconductor Components Industries, LLC www.onsemi.com
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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