FDC6561AN

## **ON Semiconductor** 

## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## **FDC6561AN** 

## **Dual N-Channel Logic Level  PowerTrench[TM] MOSFET** 

## **General Description** 

## **Features** 

These N-Channel   Logic   Level  MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. 

These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. 

- 2.5 A, 30 V.  RDS(ON) = 0.095 Ω  @ VGS = 10 V RDS(ON) = 0.145 Ω  @ VGS = 4.5 V 

Very fast switching. 

Low gate charge (2.1nC typical). 

- SuperSOT[TM] -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). 

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SOT-23 SuperSOTTM-6 SuperSOTTM-8<br>**----- End of picture text -----**<br>


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SO-8 SOT-223 SOIC-16<br>**----- End of picture text -----**<br>


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D2<br>S1<br>D1<br>G2<br>S2<br>pin  1 G1<br>SuperSOT   -6TM<br>.561<br>**----- End of picture text -----**<br>


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4 3<br>5 2<br>6 1<br>**----- End of picture text -----**<br>


|**Absolute Maximum Ratin**|**Absolute Maximum Ratings**<br>TA= 25°C unless otherwise note|= 25°C unless otherwise note|
|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|
|VDSS|Drain-Source Voltage|30|
|VGSS|Gate-Source Voltage - Continuous|±20|
|ID|Drain Current - Continuous<br>- Pulsed|2.5|
|||10|
|PD|Maximum Power Dissipation<br>(Note 1a)<br>(Note 1b)<br>(Note 1c)|0.96|
|||0.9|
|||0.7|
|TJ,TSTG|Operating and Storage Temperature Range|-55 to 150|



© 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 

Publication Order Number: FDC6561AN/D 

**ELECTRICAL CHARACTERISTICS** (TA = 25°C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= 250 µA||30|||V|
|∆BVDSS/∆TJ|Breakdown Voltage Temp. Coefficient|ID= 250 µA, Referenced to  25oC|||23.6||mV/oC|
|IDSS|Zero Gate Voltage  Drain Current|VDS= 24 V,  VGS= 0 V||||1|µA|
||||TJ= 55oC|||10|µA|
|IGSSF|Gate - Body Leakage, Forward|VGS= 20 V, VDS= 0 V||||100|nA|
|IGSSR|Gate - Body Leakage, Reverse|VGS= -20 V, VDS= 0 V||||-100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS,  ID= 250 µA||1|1.8|3|V|
|∆VGS(th)/∆TJ|Gate Threshold  VoltageTemp.Coefficient|ID= 250 µA, Referenced to  25oC|||-4||mV/oC|
|RDS(ON)|Static Drain-Source On-Resistance|VGS= 10 V,  ID= 2.5 A<br>VGS= 4.5 V,  ID= 2.0 A|||0.082|0.095|Ω|
||||TJ= 125oC||0.122|0.152||
||||||0.113|0.145||
|ID(on)|On-State Drain Current|VGS= 10 V, VDS= 5 V||10|||A|
|gFS|Forward Transconductance|VDS= 5 V,  ID= 2.5 A|||5||S|
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss|Input Capacitance|VDS= 15 V,  VGS= 0 V,<br>f  = 1.0 MHz|||220||pF|
|Coss|Output Capacitance||||50||pF|
|Crss|Reverse Transfer Capacitance||||25||pF|
|**SWITCHING CHARACTERISTICS**(Note 2)||||||||
|tD(on)|Turn - On Delay Time|VDD= 5 V,  ID= 1 A,<br>VGS= 10 V,  RGEN= 6Ω|||6|12|ns|
|tr|Turn - On Rise Time||||10|18|ns|
|tD(off)|Turn - Off Delay Time||||12|22|ns|
|tf|Turn - Off Fall Time||||2|6|ns|
|Qg|Total Gate Charge|VDS= 15 V,  ID= 2.5 A<br>VGS= 5 V|||2.3|3.2|nC|
|Qgs|Gate-Source Charge||||0.7|1|nC|
|Qgd|Gate-Drain Charge||||0.9|1.3|nC|
|**DRAIN-SOURCE DIODE CHARACTERISTICS**||||||||
|IS|Continuous Source Diode Current|||||0.75|A|
|VSD|Drain-Source Diode Forward Voltage|VGS= 0 V,  IS= 0.75 A(|Note 2)||0.78|1.2|V|
|Notes:<br>1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the   drain pins. RθJCis guaranteed<br>by design while RθCAis determined by the user's board design.<br>2. Pulse Test: Pulse Width<<br>300µs, Duty Cycle<<br> 2.0%.<br>c. 180<br>OC/W on a minimum pad.<br>b. 140<br>OC/W on a 0.005 in<br>2pad of<br>2oz copper.<br>a. 130<br>OC/W on a 0.125 in<br>2pad of<br>2oz copper.||||||||



Notes: 

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the   drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 

a. 130OC/W on a 0.125 in2 pad of b. 140OC/W on a 0.005 in2 pad of c. 180OC/W on a minimum pad. 2oz copper. 2oz copper. 

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## **Typical Electrical Characteristics** 

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10<br>V   =10VGS<br> 6.0V<br>8  4.5V<br> 4.0V<br>6<br> 3.5V<br>4<br>2<br> 3.0V<br>0<br>0 1 2 3 4<br>V     , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 1. On-Region Characteristics.<br>1.6<br>I   = 2.5 AD<br>V     = 10 VGS<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>T  , JUNCTION TEMPERATURE (°C)J<br>I    , DRAIN-SOURCE CURRENT (A)D<br>DS(ON)<br>R            , NORMALIZED<br>DRAIN-SOURCE ON-RESISTANCE<br>**----- End of picture text -----**<br>


## **Figure 3. On-Resistance Variation** 

**with Temperature.** 

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10<br>V     = 5VDS<br>T   = -55°CA 125°C<br>8<br>25°C<br>6<br>4<br>2<br>0<br>1 2 3 4 5 6<br>V     , GATE TO SOURCE VOLTAGE (V)GS<br>I   , DRAIN CURRENT (A)D<br>**----- End of picture text -----**<br>


**Figure 5.Transfer Characteristics.** 

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2<br>1.8<br>1.6 V    = 4.0VGS<br>1.4  4.5V<br> 5.0V<br>1.2  6.0V<br>7.0V<br> 10V<br>1<br>0.8<br>0 2 4 6 8 10<br>I   , DRAIN CURRENT (A)D<br>Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>0.3<br>I   = 1.3AD<br>0.25<br>0.2<br>0.15  T   = 125°CA<br>0.1<br> T  = 25°CA<br>0.05<br>2 4 6 8 10<br>V      , GATE TO SOURCE VOLTAGE (V)GS<br>DS(ON)<br>R             , NORMALIZED<br>DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R             , ON-RESISTANCE (OHM)<br>**----- End of picture text -----**<br>


## **Figure 4. On-Resistance Variation with Gate-to-Source Voltage.** 

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10<br>V     = 0VGS<br>1<br>T  = 125A °C<br>0.1 25 ° C<br>-55°C<br>0.01<br>0.001<br>0.0001<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>V     , BODY DIODE FORWARD VOLTAGE (V)SD<br>I   , REVERSE DRAIN CURRENT (A)S<br>**----- End of picture text -----**<br>


**Figure 6. Body Diode Forward Voltage Variation with Source  Current and Temperature.** 

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## **Typical Electrical Characteristics** (continued) 

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10 500<br>I   = 2.5AD<br>8 C  iss<br>V     = 5VDS 15V 200<br>6 100<br>10V<br>C  oss<br>4 50<br>C  rss<br>2 f = 1 MHz<br>20 V     = 0VGS<br>0<br>0 1 2 3 4 10<br>Q   , GATE CHARGE (nC)g 0.1 V     , DRAIN TO SOURCE VOLTAGE (V)DS0.5 1 2 5 10 30<br>Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics .<br>30 5<br>10<br>SINGLE PULSE<br>4<br>3 R     =180°C/W      θ [JA]<br>T  = 25°CA<br>1 3<br>0.3 2<br>0.1 V     = 10VGS<br>SINGLE PULSE<br>0.03 R     θ [JA] =180°C/W       1<br>T  = 25°CA<br>0.01 0<br>0.1 0.3 1 3 10 30 50 0.01 0.1 1 10 100 300<br> V     , DRAIN-SOURCE VOLTAGE (V)DS SINGLE PULSE TIME (SEC)<br>Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power<br>Dissipation.<br>1<br>0.5  D = 0.5<br>R       θ [JA] (t) = r(t)  *  R      θ [JA]<br>0.2   0.2      R        =θ [JA] 180°C/W<br>0.1  0.1  P(pk)<br>0.05  0.05   t  1  t    2<br> 0.02<br> 0.01  T  - T    = P  * R       (t) J A θ [JA]<br>0.02  Single Pulse  Duty Cycle, D = t   / t 1 2<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 300<br>t  , TIME (sec)1<br> 100us<br> 1ms<br>10ms<br>100ms<br> 1s<br> DC<br>RDS(ON) LIMIT<br>CAPACITANCE (pF)<br>GS<br>V      , GATE-SOURCE VOLTAGE (V)<br>POWER (W)<br>I   , DRAIN CURRENT (A)D<br>r(t), NORMALIZED EFFECTIVE<br>TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Figure 11. Transient Thermal Response Curve.** 

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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