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FDC6420C

Dual MOSFET, Complementary N and P Channel, 20 V, 3 A, 0.05 ohm, SuperSOT, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Dual MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • Channel Type: Complementary N and P Channel
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Complementary N and P Channel
  • Power Dissipation Pd: 960mW
  • Rds(on) Test Voltage: 4.5V
  • On Resistance Rds(on): 0.05ohm
  • Transistor Case Style: SuperSOT
  • Drain Source Voltage Vds: 20V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 3A
  • Power Dissipation N Channel: 960mW
  • Power Dissipation P Channel: 960mW
  • Gate Source Threshold Voltage Max: 900mV
  • Drain Source Voltage Vds N Channel: 20V
  • Drain Source Voltage Vds P Channel: 20V
  • Continuous Drain Current Id N Channel: 3A
  • Continuous Drain Current Id P Channel: 3A
  • Drain Source On State Resistance N Channel: 0.07ohm
  • Drain Source On State Resistance P Channel: 0.07ohm
Delivery and price
Units per pack 3000
Price 0.247 €
Current stock N/A
Lead time 30 days