FDC6333C..

## **Is Now Part of** 

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October 2001<br>**----- End of picture text -----**<br>


## **FDC6333C** 

## **30V N & P-Channel PowerTrench[] MOSFETs** 

## **General Description** 

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. 

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. 

## **Applications** 

- DC/DC converter 

- Load switch 

## **Features** 

   - **Q1** 2.5 A, 30V. RDS(ON) =   95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V 

   - • **Q2** –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = –4.5 V 

   - Low gate charge 

   - High performance trench technology for extremely low RDS(ON). 

   - SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). 

- LCD display inverter 

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D2<br>S1 Q2(P)<br>D1 4 3<br>G2 Z 5 ine 2<br>SuperSOT    -6TM G1 S2<br>Pin 1 6 1<br>Q1(N)<br>SuperSOT™-6<br>**----- End of picture text -----**<br>


|**Absolute Maximum Ratings**TA=25oC unless otherwise noted|**Absolute Maximum Ratings**TA=25oC unless otherwise noted|**Absolute Maximum Ratings**TA=25oC unless otherwise noted|**Absolute Maximum Ratings**TA=25oC unless otherwise noted|**Absolute Maximum Ratings**TA=25oC unless otherwise noted||||||
|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||||**Q1**||**Q2**||**Units**|
|VDSS|Drain-Source Voltage||||30||–30||V|
|VGSS|Gate-Source Voltage||||±16||±25||V|
|ID|Drain Current<br>– Continuous||(Note 1a)||2.5||–2.0||A|
||– Pulsed||||8||–8|||
|PD|Power Dissipation for Single Operation||(Note 1a)||0.96|||||
||||(Note 1b)||0.9||||W|
||||(Note 1c)||0.7|||||
|TJ, TSTG|Operatingand Storage Junction Temperature Range||||–55 to +150||||°C|
|**Thermal Characteristics**||||||||||
|RθJA<br>Thermal Resistance, Junction-to-Ambient<br>(Note 1a)<br>RθJC<br>Thermal Resistance, Junction-to-Case<br>(Note 1)<br>**Package Marking and Ordering Information**<br>~~——~~|||||130<br>60||||°C/W<br>°C/W|
|**Device Marking**<br>**Device**||**Reel Size**|||**Tape width**|||**Quantity**||
|.333<br>FDC6333C|||7’’||8mm|||3000 units||



2001 Fairchild Semiconductor Corporation 

FDC6333C  Rev C (W) 

|||**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**|TA= 25°C unless otherwise noted|TA= 25°C unless otherwise noted||||**Units**<br>V<br>mV/°C<br>µA<br>nA<br>nA<br>V<br>mV/°C<br>mΩ<br>A<br>S<br>pF<br>pF<br>pF<br>ns<br>ns<br>ns<br>ns<br>nC<br>nC<br>nC|
|---|---|---|---|---|---|---|---|---|---|---|
|||**Symbol**|**Parameter**||**Test Conditions**||**Min**|**Typ**|**Max**||
|||**Off Characteristics**|||||||||
|||BVDSS|Drain–Source Breakdown Voltage||VGS= 0 V,      ID= 250µA<br>VGS=0V,ID= –250 µA|**Q1**<br>**Q2**|30<br>–30||||
|||∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coefficient||ID= 250µA,Ref. to 25°C<br>ID= –250 µA,Ref.to25°C|**Q1**<br>**Q2**||27<br>–22|||
|||IDSS|Zero Gate Voltage Drain Current||VDS= 24 V,<br>VGS= 0 V<br>VDS= –24 V, VGS=0V|**Q1**<br>**Q2**|||1<br>–1||
|||IGSSF|Gate–Body Leakage, Forward||VGS= 16 V,<br>VDS= 0 V<br>VGS= 25 V,<br>VDS= 0 V|**Q1**<br>**Q2**|||100<br>100||
|||IGSSR|Gate–Body Leakage, Reverse||VGS= –16 V, VDS= 0 V<br>VGS = –25 V, VDS =0 V|**Q1**<br>**Q2**|||–100<br>–100||
|||**On Characteristics**<br>**(Note 2)**|||||||||
|||VGS(th)|Gate Threshold Voltage|**Q1**|VDS= VGS,  ID= 250µA||1|1.8|3||
|||||**Q2**|VDS= VGS,  ID= –250µA||–1|–1.8|–3||
|||∆VGS(th)<br>∆TJ|Gate Threshold Voltage<br>Temperature Coefficient|**Q1**|ID= 250µA,Ref. To 25°C|||4|||
|||||**Q2**|ID= –250µA,Ref. to 25°C|||–4|||
|||RDS(on)|Static Drain–Source<br>On–Resistance|**Q1**|VGS= 10 V,<br>ID= 2.5 A<br>VGS= 4.5 V, ID= 2.0 A<br>VGS= 10 V, ID= 2.5 A,TJ=125°C|||73<br>90<br>106|95<br>150<br>148||
|||||**Q2**|VGS= –10 V, ID= –2.0 A<br>VGS=– 4.5 V, ID= –1.7 A<br>VGS= 10 V, ID= –2.0 A,TJ=125°C|||95<br>142<br>149|130<br>220<br>216||
|||ID(on)|On–State Drain Current|**Q1**|VGS= 10 V,<br>VDS= 5 V||8||||
|||||**Q2**|VGS= –10 V, VDS= –5 V||–8||||
|||gFS|Forward Transconductance|**Q1**|VDS= 5 V<br>ID= 2.5 A|||7|||
|||||**Q2**|VDS= –5 V<br>ID=  –2.0A|||3|||
|||**Dynamic Characteristics**|||||||||
|||Ciss|Input Capacitance|**Q1**|VDS=15 V,VGS= 0 V,f=1.0MHz|||282|||
|||||**Q2**|VDS=–15 V, VGS= 0 V, f=1.0MHz|||185|||
|||Coss|Output Capacitance|**Q1**|VDS=15 V, VGS= 0 V, f=1.0MHz|||49|||
|||||**Q2**|VDS=–15 V, VGS= 0 V, f=1.0MHz|||56|||
|||Crss|Reverse Transfer Capacitance|**Q1**|VDS=15 V, VGS= 0 V, f=1.0MHz|||20|||
|||||**Q2**|VDS=–15 V, VGS= 0 V, f=1.0MHz|||26|||
|||**Switching Characteristics**<br>**(Note 2)**|||||||||
|||td(on)|Turn–On Delay Time|**Q1**|For**Q1**:<br>VDS=15 V,<br>IDS= 1 A<br>VGS= 10 V,<br>RGEN= 6Ω<br>For**Q2**:<br>VDS=–15 V,<br>IDS= –1 A<br>VGS= –10 V, RGEN= 6Ω|||4.5|9||
|||||**Q2**||||4.5|9||
|||tr|Turn–On Rise Time|**Q1**||||6|12||
|||||**Q2**||||13|23||
|||td(off)|Turn–Off Delay Time|**Q1**||||19|34||
|||||**Q2**||||11|20||
|||tf|Turn–Off Fall Time|**Q1**||||1.5|3||
|||||**Q2**||||2|4||
|||Qg|Total Gate Charge|**Q1**|For**Q1**:<br>VDS=15 V,<br>IDS= 2.5 A<br>VGS= 10 V,<br>RGEN= 6Ω<br>For**Q2**:<br>VDS=–15 V,<br>IDS= –2.0 A<br>VGS= –10 V,|||4.7|6.6||
|||||**Q2**||||4.1|5.7||
|||Qgs|Gate–Source Charge|**Q1**||||0.9|||
|||||**Q2**||||0.8|||
|||Qgd|Gate–Drain Charge|**Q1**||||0.6|||
|||||**Q2**||||0.4|||
||||||||||||



FDC6333C Rev C (W) 

|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|**Electrical Characteristics**<br>TA= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Test Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**Drain–Source Diode Characteristics and Maximum Ratings**|||||||||
|IS|Maximum Continuous Drain–Source Diode Forward Current|||**Q1**|||0.8|A|
|||||**Q2**|||–0.8||
|VSD|Drain–Source Diode Forward<br>Voltage|**Q1**|VGS= 0 V, IS= 0.8 A<br>(Note 2)|||0.8|1.2|V|
|||**Q2**|VGS= 0 V, IS= 0.8 A<br>(Note 2)|||0.8|–1.2||



## **Notes:** 

**1.** RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.  RθJC is guaranteed by design while RθCA is determined by the user's board design. 

a) 130 °C/W when mounted on a 0.125in[2] pad of 2 oz. b) 140°/W when mountedon a .004 in[2] pad of 2 oz c) 180°/W when mounted on aminimum pad. copper copper. 

Scale 1 : 1 on letter size paper 

**2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 

FDC6333C Rev C (W) 

## **Typical Characteristics: N-Channel** 

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10 2<br>VGS = 10V 4.5V VGS = 3.0V<br>6.0V 3.5V<br>8 1.8<br>1.6<br>6<br>3.5V<br>1.4<br>3.0V 4.0V<br>4<br>4.5V<br>1.2<br>6.0V<br>2 10V<br>1<br>0 0.8<br>0 1 2 3 0 2 4 6 8 10<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.6 0.25<br>ID = 2.5A<br>VGS = 10V ID = 1.25A<br>1.4<br>0.2<br>1.2<br>0.15<br>TA = 125 [o] C<br>1<br>0.1<br>0.8 TA = 25 [o] C<br>0.6 0.05<br>-50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with<br>withTemperature. Gate-to-Source Voltage.<br>10 100<br>VDS =5V TA =-55 [o] C 25 [o] C VGS = 0V<br>10<br>8<br>125 [o] C TA = 125 [o] C<br>1<br>6<br>25 [o] C<br>0.1<br>4 -55 [o] C<br>0.01<br>2<br>0.001<br>0 0.0001<br>1.5 2 2.5 3 3.5 4 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>, NORMALIZED<br>, DRAIN CURRENT (A)ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>DS(ON) , ON-RESISTANCE (OHM)<br>R DS(ON)<br>R<br> DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)ID<br>, REVERSE DRAIN CURRENT (A)IS<br>**----- End of picture text -----**<br>


FDC6333C Rev C (W) 

## **Typical Characteristics: N-Channel** (continued) 

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10 400<br>ID = 2.5A VDS = 5V 10V Vf = 1MHzGS = 0 V<br>8<br>15V 300<br>CISS<br>6<br>200<br>4<br>100<br>2<br>COSS<br>CRSS<br>0 0<br>0 1 2 3 4 5 0 5 10 15 20 25 30<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.<br>100 5<br>SINGLE PULSE<br>R DS(ON)  LIMIT 4 RθJA = 180°C/W<br>10 10µs TA = 25°C<br>100µs<br>1ms 3<br>10ms<br>1 100ms<br>1s 2<br>V GS  = 10V DC<br>SINGLE PULSE<br>0.1 RθJA = 180 [o] C/W 1<br>TA = 25 [o] C<br>0.01 0<br>0.1 1 10 100 0.01 0.1 1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area.** 

**Figure 10. Single Pulse Maximum Power Dissipation.** 

FDC6333C Rev C (W) 

## **Typical Characteristics: P-Channel** 

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10 3<br>VGS = -10V -6.0V VGS = -3.5V<br>8 -4.5V 2.5<br>6 -4.0V 2 -4.0V<br>-4.5V<br>4 -3.5V 1.5 -5.0V -6.0V<br>-10V<br>2 1<br>0 0.5<br>0 1 2 3 4 5 0 2 4 6 8 10<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)<br>Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>1.6 0.4<br>ID = -2A<br>VGS =-10V ID = -1A<br>1.4<br>0.3<br>1.2 TA = 125 [o] C<br>0.2<br>1<br>TA = 25 [o] C<br>0.8 0.1<br>0.6<br>-50 -25 0 25 50 75 100 125 150 0<br>2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 13. On-Resistance Variation Figure 14. On-Resistance Variation with<br>withTemperature. Gate-to-Source Voltage.<br>5 10<br>VDS = -5V TA = -55 [o] C 25 [o] C VGS = 0V<br>4 1<br>125 [o] C T A  = 125 [o] C<br>3 0.1<br>25 [o] C<br>2 0.01<br>-55 [o] C<br>1 0.001<br>0 0.0001<br>1.5 2.5 3.5 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>, NORMALIZED<br>, DRAIN CURRENT (A)-ID RDS(ON)<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>RDS(ON) , ON-RESISTANCE (OHM)DS(ON)<br> DRAIN-SOURCE ON-RESISTANCE R<br>, DRAIN CURRENT (A)-ID<br>, REVERSE DRAIN CURRENT (A)-IS<br>**----- End of picture text -----**<br>


FDC6333C Rev C (W) 

## **Typical Characteristics: P-Channel** (continued) 

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**----- Start of picture text -----**<br>
10 300<br>f = 1MHz<br>ID = -2.0A VDS = -5V -10V 250 VGS = 0 V<br>8<br>-15V CISS<br>200<br>6<br>150<br>4 COSS<br>100<br>2<br>50<br>CRSS<br>0 0<br>0 1 2 3 4 5 0 5 10 15 20 25 30<br>Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.<br>100 5<br>SINGLE PULSE<br>R DS(ON)  LIMIT 4 RθJA = 180°C/W<br>10 10µs TA = 25°C<br>100µs<br>1ms 3<br>10ms<br>1 100ms<br>1s 2<br>V GS  = 10V DC<br>SINGLE PULSE<br>0.1 RθJA = 180 [o] C/W 1<br>TA = 25 [o] C<br>0.01 0<br>0.1 1 10 100 0.01 0.1 1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum<br>Power Dissipation.<br>1<br>D = 0.5<br>RθJA(t) = r(t) + RθJA<br>0.2 R θJA  = 180°C/W<br>0.1 0.1<br>0.05<br>0.02 P(pk)<br>0.01 t 1<br>0.01 t2<br>TJ - TA = P * RθJA(t)<br>SINGLE PULSE Duty Cycle, D = t 1  / t 2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 21. Transient Thermal Response Curve.<br>Thermal characterization performed using the conditions described in Note 1c.<br>Transient thermal response will change depending on the circuit board design.<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>r(t), NORMALIZED EFFECTIVE<br>TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


FDC6333C Rev C (W) 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

**==> picture [433 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|ACEx™|FAST||OPTOLOGIC™|SMART START™|VCX™|
|Bottomless™|FASTr™|OPTOPLANAR™|STAR*POWER™|
|CoolFET™|FRFET™|PACMAN™|Stealth™|
|CROSSVOLT|™|GlobalOptoisolator™|POP™|SuperSOT™-3|
|DenseTrench™|GTO™|Power247™|SuperSOT™-6|
|DOME™|HiSeC™|PowerTrench||SuperSOT™-8|
|EcoSPARK™|ISOPLANAR™|QFET™|SyncFET™|
|E|[2]|CMOS|[TM]|LittleFET™|QS™|TinyLogic™|
|EnSigna|[TM]|MicroFET™|QT Optoelectronics™|TruTranslation™|
|FACT™|MicroPak™|Quiet Series™|UHC™|
|FACT Quiet Series™|MICROWIRE™|SILENT SWITCHER||UltraFET||

**----- End of picture text -----**<br>


STAR*POWER is used under license 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 

1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

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**----- Start of picture text -----**<br>
Datasheet Identification Product Status Definition<br>Advance Information Formative or This datasheet contains the design specifications for<br>In Design product development. Specifications may change in<br>any manner without notice.<br>Preliminary First Production This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.<br>No Identification Needed Full Production This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.<br>Obsolete Not In Production This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.<br>**----- End of picture text -----**<br>


Rev. H4 

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