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FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:460mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Volt
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SuperSOT
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 900mW
- Power Dissipation P Channel: 900mW
- Drain Source Voltage Vds N Channel: 25V
- Drain Source Voltage Vds P Channel: 25V
- Continuous Drain Current Id N Channel: 680mA
- Continuous Drain Current Id P Channel: 460mA
- Drain Source On State Resistance N Channel: 0.45ohm
- Drain Source On State Resistance P Channel: 1.1ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.205 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DATA SHEET www.onsemi.com** ## Dual, N & P-Channel, Digital FET FDC6321C ## **General Description** These dual N & P Channel logic level enhancement mode field effect transistors are produced using **onsemi** ’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors. ## **Features** - N−Channel 0.68 A, 25 V - RDS(ON) = 0.45 � @ VGS = 4.5 V - P−Channel −0.46 A, −25 V - RDS(ON) = 1.1 � @ VGS = −4.5 V - Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.0 V. - Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model - Replace Multiple Dual NPN & PNP Digital Transistors - This is a Pb−Free Device |**N−Channel**|**N−Channel**|**N−Channel**| |---|---|---| |**VDSS**|**RDS(ON) MAX**|**ID MAX**| |25 V|0.45�@ 4.5 V|0.68 A| |||| |**P−Channel**||| |**VDSS**|**RDS(ON) MAX**|**ID MAX**| |−25 V|1.1�@ −4.5 V|−0.46 A| |||| |**TSOT23 6−Lead**<br>**SUPERSOT**�**−6**<br>**CASE 419BL**<br>G1S2<br>G2<br>D1<br>D2<br>S1||| |**MARKING DIAGRAM**<br>321 M�<br>�<br>1||| 321 = Specific Device Code M = Assembly Operation Month � = Pb−Free Package (Note: Microdot may be in either location) ## **PINOUT** **==> picture [95 x 94] intentionally omitted <==** **----- Start of picture text -----**<br> 4 3<br>5 2<br>6 1<br>**----- End of picture text -----**<br> **ORDERING INFORMATION** |**Device**|**Packag**|**e**<br>**Shipping**†| |---|---|---| |FDC6321C|TSOT−23<br>(Pb−fre|−6<br>e)<br>3000 /<br>Tape & Reel| |†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specification<br>Brochure, BRD8011/D.||| Publication Order Number: **FDC6321C/D** **1** © Semiconductor Components Industries, LLC, 1999 **February, 2022 − Rev. 3** **FDC6321C** **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) |**ABSOLUT**|**E MAXIMUM RATINGS** (TA= 25°C unless othe|**E MAXIMUM RATINGS** (TA= 25°C unless othe|rwise noted)||| |---|---|---|---|---|---| |**Symbol**|**Parameter**||**N−Channel**|**P−Channel**|**Unit**| |VDSS, VCC|Drain−Source Voltage, Power Supply Voltage||25|−25|V| |VGSS, VIN|Gate−Source Voltage||8|−8|V| |ID, IO|Drain/Output Current|− Continuous|0.68|−0.46|A| |||− Pulsed|2|−1.5|A| |PD|Power Dissipation|(Note 1a)|0.9||W| |||(Note 1b)|0.7||W| |TJ, TSTG|Operating and Storage Temperature Range||−55 to +150||°C| |ESD|Electrostatic Discharge Rating MIL−STD−883D<br>Human Body Model (100 pF / 1500�)||6||kV| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Ratings**|**Unit**| |---|---|---|---| |R�JA|Thermal Resistance, Junction−to−Ambient<br>(Note 1a)|140|°C/W| |R�JC|Thermal Resistance, Junction−to−Case (Note 1)|60|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRI**|**CAL CHARACTERISTICS** (TA=|25°C unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |BVDSS|Drain–Source Breakdown Volt-<br>age|VGS= 0 V, ID= 250�A<br>VGS= 0 V, ID= −250�A|N−Ch<br>P−Ch|25<br>−25|−<br>−|−<br>−|V| |�BVDSS<br>�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250�A,Referenced to 25°C<br>ID= −250�A,Referenced to 25°C|N−Ch<br>P−Ch|−<br>−|26<br>−22|−<br>−|mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 20 V, VGS= 0 V<br>VDS= 20 V, VGS= 0 V, TJ= 55°C|N−Ch|−<br>−|−<br>−|1<br>10|�A| |||VDS= −20 V, VGS= 0 V<br>VDS= −20 V, VGS= 0 V, TJ= 55°C|P−Ch|−<br>−|−<br>−|−1<br>−10|nA| |IGSS|Gate–Body Leakage Current|VGS= 8 V, VDS= 0 V<br>VGS= –8 V, VDS= 0 V|N−Ch<br>P−Ch|−|−|100<br>−100|nA| |**ON CHARACTERISTICS**(Note 2)|||||||| |�VGS(th)<br>�TJ|Gate Threshold Voltage<br>Temperature Coefficient|ID= 250�A, Referenced to 25°C<br>ID= −250�A, Referenced to 25°C|N−Ch<br>P−Ch|−<br>−|–2.6<br>2.1|−<br>−|mV/°C| |VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250�A<br>VDS= VGS, ID= −250�A|N−Ch<br>P−Ch|0.65<br>−0.65|0.8<br>−0.86|1.5<br>−1.5|V| |RDS(on)|Static Drain–Source<br>On–Resistance|VGS= 4.5 V, ID= 0.5 A<br>VGS= 4.5 V, ID= 0.5 A, TJ= 125°C<br>VGS= 2.7 V, ID= 0.25 A<br>VGS= −4.5 V, ID= −0.5 A<br>VGS= −4.5 V, ID= −0.5 A, TJ= 125°C<br>VGS= −2.7 V, ID= −0.25 A|N−Ch<br>N−Ch<br>N−Ch<br>P−Ch<br>P−Ch<br>P−Ch|−<br>−<br>−<br>−<br>−<br>−|0.33<br>0.51<br>0.44<br>0.87<br>1.21<br>1.22|0.45<br>0.72<br>0.6<br>1.1<br>1.8<br>1.5|�| |ID(on)|On−State Drain Current|VGS= 4.5 V, VDS= 5 V<br>VGS= −4.5 V, VDS= −5 V|N−Ch<br>P−Ch|1<br>−1|−<br>−|−<br>−|A| |gFS|Forward Transconductance|VDS= 5 V, ID= 0.5 A<br>VDS= −5 V, ID= −0.5 A|N−Ch<br>P−Ch|−<br>−|1.45<br>0.8|−<br>−|S| **www.onsemi.com** **2** **FDC6321C** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (continued) |**ELECTRI**|**CAL CHARACTERISTICS** (TA=|25°C unless otherwise noted) (continued)|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Unit**| |**DYNAMIC CHARACTERISTICS**|||||||| |Ciss|Input Capacitance|N−Channel<br>VDS= 10 V, VGS= 0 V, f = 1.0 MHz<br>P−Channel<br>VDS= −10 V, VGS= 0 V, f = 1.0 MHz|N−Ch<br>P−Ch|−<br>−|50<br>63|−<br>−|pF| |Coss|Output Capacitance||N−Ch<br>P−Ch|−<br>−|28<br>34|−<br>−|pF| |Crss|Reverse Transfer Capacitance||N−Ch<br>P−Ch|−<br>−|9<br>10|−<br>−|pF| |**SWITCHING CHARACTERISTICS**(Note 2)|||||||| |td(on)|Turn–On Delay Time|N−Channel<br>VDD= 6 V, ID= 0.5 A,<br>VGS= 4.5 V, RGEN= 50�<br>P−Channel<br>VDD= −6 V, ID= −0.5 A,<br>VGS= −4.5 V, RGEN= 50�|N−Ch<br>P−Ch|−<br>−|3<br>7|6<br>20|ns| |tr|Turn–On Rise Time||N−Ch<br>P−Ch|−<br>−|8<br>9|16<br>18|ns| |td(off)|Turn–Off Delay Time||N−Ch<br>P−Ch|−<br>−|17<br>55|30<br>110|ns| |tf|Turn–Off Fall Time||N−Ch<br>P−Ch|−<br>−|13<br>35|25<br>70|ns| |Qg|Total Gate Charge|N−Channel<br>VDS= 5 V, ID= 0.5 A, VGS= 4.5 V<br>P−Channel<br>VDS= −5 V, ID= −0.25 A, VGS= −4.5 V|N−Ch<br>P−Ch|−<br>−|1.64<br>1.1|2.3<br>1.5|nC| |Qgs|Gate–Source Charge||N−Ch<br>P−Ch|−<br>−|0.38<br>0.32|−<br>−|nC| |Qgd|Gate–Drain Charge||N−Ch<br>P−Ch|−<br>−|0.45<br>0.25|−<br>−|nC| |**DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS**|||||||| |IS|Maximum Continuous Drain–Source Diode Forward Current||N−Ch<br>P−Ch|−<br>−|−<br>−|0.3<br>−0.5|A| |VSD|Drain–Source Diode Forward<br>Voltage (Note 2)|VGS= 0 V, IS= 0.5 A<br>VGS= 0 V, IS= 0.5 A, TJ= 125°C<br>VGS= 0 V, IS= −0.5 A<br>VGS= 0 V, IS= −0.5 A, TJ= 125°C|N−Ch<br>N−Ch<br>P−Ch<br>P−Ch|−<br>−<br>−<br>−|0.83<br>0.69<br>−0.89<br>−0.75|1.2<br>0.85<br>−1.2<br>−0.85|V| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R � JA is the sum of the junction−to−case and case−to−ambient thermal resistance where thecase thermal reference is defined as the solder mounting surface of the drain pins. R � JC is guaranteed by design while R � CA is determined by the user’s board design. a. 140 ° C/W on a 0.125 in[2] pad of 2 oz. copper. b. 180 ° C/W on a 0.005 in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width < 300 � s, Duty cycle < 2.0 %. **www.onsemi.com** **3** **FDC6321C** ## **TYPICAL CHARACTERISTICS: N−CHANNEL** **==> picture [224 x 340] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5<br>VGS = 4.5 V<br>3.5<br>3.0<br>1.2 2.0<br>2.7<br>2.5<br>0.9<br>0.6<br>0.3 1.5<br>0<br>0 0.5 1 1.5 2<br>VDS, Drain−Source Voltage (V)<br>Figure 1. On−Region Characteristics<br>1.6<br>ID = 0.5 A<br>VGS = 4.5 V<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>−50 −25 0 25 50 75 100 125 150<br>TJ, Junction Temperature ( ° C)<br>, Drain−Source Current (A)<br>ID<br>, Normalized<br>DS(ON)<br>R<br>Drain−Source On−Resistance<br>**----- End of picture text -----**<br> **Figure 3. On−Resistance Variation with Temperature** **==> picture [212 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>VDS = 5 V TJ = −55 ° C 25 ° C<br>0.8<br>125 ° C<br>0.6<br>0.4<br>0.2<br>0<br>0 0.5 1 1.5 2 2.5<br>VGS, Gate to Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 5. Transfer Characteristics** **==> picture [226 x 532] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>VGS = 2.0 V<br>1.5<br>2.5<br>2.7<br>3.0<br>3.5<br>1 4.5<br>0.5<br>0 0.2 0.4 0.6 0.8 1 1.2<br>ID, Drain Current (A)<br>Figure 2. On−Resistance Variation with<br>Drain Current and Gate Voltage<br>2<br>ID = 0.5 A<br>1.6<br>1.2<br>0.8<br>125 ° C<br>0.4 25 ° C<br>0<br>1 1.5 2 2.5 3 3.5 4 4.5 5<br>VGS, Gate to Source Voltage (V)<br>Figure 4. On−Resistance Variation with<br>Gate−to−Source Voltage<br>1<br>VGS = 0 V<br>T J = 125 ° C<br>0.1 25 ° C<br>−55 ° C<br>0.01<br>0.001<br>0.0001<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VSD, Body Diode Forward Voltage (V)<br>, Normalized<br>DS(ON)<br>R<br>Drain−Source On−Resistance<br>) �<br>, On−Resistance (<br>DS(ON)<br>R<br>, Reverse Drain Current (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature** **www.onsemi.com** **4** **FDC6321C** ## **TYPICAL CHARACTERISTICS: N−CHANNEL** (continued) **==> picture [215 x 344] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>ID = 0.5 A VDS = 5 V<br>4<br>10 V<br>3<br>15 V<br>2<br>1<br>0<br>0 0.4 0.8 1.2 1.6 2<br>Qg, Gate Charge (nC)<br>Figure 7. Gate Charge Characteristics<br>5<br>R DS(ON) LIMIT 100 � s<br>1 ms<br>1<br>10 ms<br>0.3<br>100 ms<br>0.1 1 s<br>VGS = 4.5 V<br>SINGLE PULSE DC<br>0.03 R � JA = 180 ° C/W<br>TA = 25 ° C<br>0.01<br>0.1 0.2 0.5 1 2 5 10 20 40<br>VDS, Drain−Source Voltage (V)<br>, Gate−Source Voltage (V)<br>GS<br>V<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 9. Maximum Safe Operating Area** **==> picture [214 x 344] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>100<br>50 C ISS<br>COSS<br>20<br>f = 1 MHz<br>VGS = 0 V<br>10<br>CRSS<br>5<br>0.1 0.5 1 2 5 10 25<br>VDS, Drain to Source Voltage (V)<br>Figure 8. Capacitance Characteristics<br>5<br>SINGLE PULSE<br>R � JA = 180 ° C/W<br>4 T A = 25 ° C<br>3<br>2<br>1<br>0<br>0.01 0.1 1 10 100 300<br>t1, Single Pulse Time (s)<br>Capacitance (pF)<br>Power (W)<br>**----- End of picture text -----**<br> **Figure 10. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **5** **FDC6321C** ## **TYPICAL CHARACTERISTICS: P−CHANNEL** **==> picture [222 x 532] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5<br>VGS = −4.5 V<br>−3.5<br>1.25 −3.0 −2.7<br>1 −2.5<br>0.75<br>−2.0<br>0.5<br>0.25<br>−1.5<br>0<br>0 1 2 3 4 5<br>−VDS, Drain−Source Voltage (V)<br>Figure 11. On−Region Characteristics<br>1.6<br>ID = −0.5 A<br>VGS = −4.5 V<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>−50 −25 0 25 50 75 100 125 150<br>TJ, Junction Temperature ( ° C)<br>Figure 13. On−Resistance Variation with<br>Temperature<br>−1<br>VDS = −5 V TJ = −55 ° C<br>25 ° C<br>−0.75<br>125 ° C<br>−0.5<br>−0.25<br>0<br>−0.5 −1 −1.5 −2 −2.5 −3<br>VGS, Gate to Source Voltage (V)<br>, Drain−Source Current (A)<br>D<br>−I<br>, Normalized<br>DS(ON)<br>R<br>Drain−Source On−Resistance<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 15. Transfer Characteristics** **==> picture [228 x 531] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>2.2<br>VGS = −2.0 V<br>2<br>1.8<br>1.6<br>−2.5<br>−2.7<br>1.4<br>−3.0<br>1.2 −3.5<br>−4.0<br>−4.5<br>1<br>0.8<br>0 0.2 0.4 0.6 0.8 1<br>−ID, Drain Current (A)<br>Figure 12. On−Resistance Variation with<br>Drain Current and Gate Voltage<br>5<br>ID = −0.5 A<br>4<br>125 ° C<br>3<br>25 ° C<br>2<br>1<br>0<br>−1 −1.5 −2 −2.5 −3 −3.5 −4 −4.5 −5<br>VGS, Gate to Source Voltage (V)<br>Figure 14. On−Resistance Variation with<br>Gate−to−Source Voltage<br>0.5<br>VGS = 0 V<br>0.1<br>TJ = 125 ° C<br>25 ° C<br>0.01<br>−55 ° C<br>0.001<br>0.0001<br>0 0.2 0.4 0.6 0.8 1 1.2<br>−VSD, Body Diode Forward Voltage (V)<br>, Normalized<br>DS(ON)<br>R<br>Drain−Source On−Resistance<br>) �<br>, On−Resistance (<br>DS(ON)<br>R<br>, Reverse Drain Current (A)<br>S<br>−I<br>**----- End of picture text -----**<br> **Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature** **www.onsemi.com** **6** **FDC6321C** ## **TYPICAL CHARACTERISTICS: P−CHANNEL** (continued) **==> picture [216 x 343] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>ID = −0.5 A VDS = −5 V<br>−10 V<br>4<br>−15 V<br>3<br>2<br>1<br>0<br>0 0.3 0.6 0.9 1.2 1.5 1.8<br>Qg, Gate Charge (nC)<br>Figure 17. Gate Charge Characteristics<br>2<br>1 1 ms<br>RDS(ON) LIMIT<br>10 ms<br>0.3<br>100 ms<br>0.1<br>1 s<br>VGS = −4.5 V<br>DC<br>SINGLE PULSE<br>0.03 R � JA = 180 ° C/W<br>TA = 25 ° C<br>0.01<br>0.1 0.2 0.5 1 2 5 10 20 40<br>−VDS, Drain−Source Voltage (V)<br>, Gate−Source Voltage (V)<br>GS<br>−V<br>, Drain Current (A)<br>D<br>−I<br>**----- End of picture text -----**<br> **Figure 19. Maximum Safe Operating Area** **==> picture [213 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>100<br>CISS<br>50 COSS<br>20<br>CRSS<br>10<br>f = 1 MHz<br>VGS = 0 V<br>5<br>0.1 0.3 0.5 1 5 10 15 25<br>−VDS, Drain to Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **Figure 18. Capacitance Characteristics** **==> picture [213 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>SINGLE PULSE<br>R � JA = 180 ° C/W<br>4 TA = 25 ° C<br>3<br>2<br>1<br>0<br>0.01 0.1 1 10 100 300<br>Single Pulse Time (s)<br>Power (W)<br>**----- End of picture text -----**<br> **Figure 20. Single Pulse Maximum Power Dissipation** **==> picture [457 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.5<br>R � JA(t) = r(t) * R � JA<br>0.2 R � JA = 180 ° C/W<br>0.1 0.1<br>P(pk)<br>0.05<br>t1<br>0.02<br>0.01 t2<br>SINGLE PULSE T J − T A = P * R � JA (t)<br>Duty Cycle, D = t1 / t2<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 300<br>t1, Time (s)<br>Thermal Resistance<br>r(t), Normalized Effective Transient<br>**----- End of picture text -----**<br> **Figure 21. Transient Thermal Response Curve** Note: Thermal characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design. **www.onsemi.com** **7** **FDC6321C** SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **www.onsemi.com** **8** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **TSOT23 6−Lead** CASE 419BL ISSUE A **==> picture [5 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>**----- End of picture text -----**<br> ## DATE 31 AUG 2020 **==> picture [42 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SCALE 2:1<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER: 98AON83292G** ## **TSOT23 6−Lead** ## **DESCRIPTION:** **==> picture [257 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>LAND PATTERN MARKING DIAGRAM*<br>RECOMMENDATION r ] ]<br>*FOR ADDITIONAL INFORMATION ON OUR<br>PB - FREE STRATEGY AND SOLDERING DETAILS, XXX M<br>PLEASE DOWNLOAD THE ON SEMICONDUCTOR<br>SOLDERING AND MOUNTING TECHNIQUES<br>REFERENCE MANUAL, SOLDERRMID. 1 | | | | i<br>XXX = Specific Device Code<br>M = Date Code<br>: = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”, a<br>may or may not be present. Some products<br>may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>**----- End of picture text -----**<br> ## **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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