FDC6301N.

**DATA SHEET www.onsemi.com** 

## Dual, N-Channel, Digital FET FDC6301N 

## **General Description** 

These dual N−Channel logic level enhancement mode field effect transistors are produced using **onsemi** ’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N−Channel FET’s can replace several digital transistors, with a variety of bias resistors. 

## **Features** 

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D2<br>S1<br>D1<br>G2<br>G1 [S2]<br>TSOT23 6−Lead<br>SUPERSOT � −6<br>CASE 419BL<br>MARKING DIAGRAM<br>301 M �<br>�<br>1<br>**----- End of picture text -----**<br>


- 25 V, 0.22 A Continuous, 0.5 A Peak 

   - ♦ RDS(on) = 5 � @ VGS = 2.7 V 

   - ♦ RDS(on) = 4 � @ VGS = 4.5 V 

- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V 

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301 = Specific Device Code<br>M = Assembly Operation Month<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

- Gate−Source Zener for ESD Ruggedness. >6 kV Human Body Model 

- This is a Pb−Free and Halide Free Device 

## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**ABSOLUT**|**E MAXIMUM RATINGS** (TA= 25°C unle|**E MAXIMUM RATINGS** (TA= 25°C unle|ss otherwise n|oted)|
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Ratings**|**Unit**|
|VDSS, VCC|Drain−Source Voltage,<br>Power Supply Voltage||25|V|
|VGSS, VIN|Gate−Source Voltage, VIN||−0.5 to + 8|V|
|ID, IOUT|Drain / Output Current|− Continuous|0.22|A|
|||− Pulsed|0.5||
|PD|Maximum Power<br>Dissipation|(Note 1a)|0.9|W|
|||(Note 1b)|0.7||
|TJ, TSTG|Operating and Storage Temperature<br>Range||−55 to +150|°C|
|ESD|Electrostatic Discharge Rating<br>MIL−STD−883D Human Body Model<br>(100 pF / 1500�)||6.0|kV|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Ratings**|**Unit**|
|---|---|---|---|
|R�JA|Thermal Resistance, Junction−to−Ambient<br>(Note 1a)|140|°C/W|
|R�JC|Thermal Resistance, Junction−to−Case<br>(Note 1)|60|°C/W|



## **PIN ASSIGNMENT** 

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4 3<br>5 2<br>6 1<br>**----- End of picture text -----**<br>


## **INVERTER APPLICATION** 

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VCC<br>D<br>OUT<br>IN G S<br>GND<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|FDC6301N|TSOT−23−6<br>(SUPERSOT�−6)<br>(Pb−Free)|3000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **FDC6301N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2001 **May, 2023 − Rev. 5** 

**FDC6301N** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**ELECTRIC**|**AL CHARACTERISTICS** (TA= 25°C u|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
||BVDSS|Drain–Source Breakdown Voltage|VGS= 0 V, ID= 250�A|25|−|−|V|
||�BVDSS<br>�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250�A, Referenced to 25°C|−|25|−|mV/°C|
||IDSS|Zero Gate Voltage Drain Current|VDS= 20 V, VGS= 0 V|−|−|1|�A|
||||VDS= 20 V, VGS= 0 V, TJ= 55°C|−|−|10|�A|
||IGSS|Gate–Body Leakage Current|VGS= 8 V, VDS= 0 V|−|−|100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
||�VGS(th)<br>�TJ|Gate Threshold Voltage Temperature<br>Coefficient|ID= 250�A, Referenced to 25°C|−|–2.1|−|mV/°C|
||VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250�A|0.65|0.85|1.5|V|
||RDS(on)|Static Drain–Source On–Resistance|VGS= 2.7 V, ID= 0.2 A<br>VGS= 2.7 V, ID= 0.2 A, TJ= 125°C<br>VGS= 4.5 V, ID= 0.4 A|−<br>−<br>−|3.8<br>6.3<br>3.1|5<br>9<br>4|�|
||ID(on)|On−State Drain Current|VGS= 10 V, VDS= 10 V|0.2|−|−|A|
||gFS|Forward Transconductance|VDS= 5 V, ID= 1.0 A|−|0.25|−|S|
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss||Input Capacitance|VDS= 10 V, VGS= 0 V, f = 1.0 MHz|−|9.5|−|pF|
|Coss||Output Capacitance||−|6|−|pF|
|Crss||Reverse Transfer Capacitance||−|1.3|−|pF|
|**SWITCHING CHARACTERISTICS**(Note 2)||||||||
|tD(on)||Turn–On Delay Time|VDD= 6 V, ID= 0.5 A,<br>VGS= 4.5 V, RGEN= 50�|−|5|10|ns|
|tr||Turn–On Rise Time||−|4.5|10|ns|
|tD(off)||Turn–Off Delay Time||−|4|8|ns|
|tf||Turn–Off Fall Time||−|3.2|7|ns|
|Qg||Total Gate Charge|VDS= 5 V, ID= 0.2 A,<br>VGS= 4.5 V|−|0.49|0.7|nC|
|Qgs||Gate–Source Charge||−|0.22|−|nC|
|Qgd||Gate–Drain Charge||−|0.07|−|nC|
|**INVERTER ELECTRICAL CHARACTERISTICS** (TA= 25°C unless otherwise noted)||||||||
|**Symbol**||**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|IO(off)||Zero Input Voltage Output Current|VCC= 20 V, VI= 0 V|−|−|1|�A|
|VI(off)||Input Voltage|VCC= 5 V, IO= 10�A|−|−|0.5|V|
|VI(on)|||VO= 0.3 V, IO= 0.005 A|1|−|−|V|
|RO(on)||Output to Ground Resistance|VI= 2.7 V, IO= 0.2 A|−|3.8|5|�|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. R � JA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R � JC is guaranteed by design while R � CA is determined by the user’s board design. R � JA shown below for single device operation on FR−4 in still air. 

a. 140 ° C/W on a 0.125 in[2] pad b. 180 ° C/W on a 0.005 in2 pad of 2 oz. copper. of 2 oz. copper. 

2. Pulse Test: Pulse Width ≤ 300 � s, Duty cycle ≤ 2.0 %. 

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**2** 

**FDC6301N** 

## **TYPICAL CHARACTERISTICS** 

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0.5 1.4<br>VGS = 4.5 V<br>VGS = 3 .5 V VGS = 3 V VGS = 2.0 V<br>0.4<br>1.2<br>VGS = 2.7 V<br>2.5 V<br>0.3 VGS = 2.5 V<br>2.7 V<br>1.0<br>3.0 V<br>0.2<br>3.5 V<br>VGS = 2 V 4.0 V<br>0.8 4.5 V<br>0.1<br>VGS = 1.5 V<br>0.0 0.6<br>0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5<br>VDS, Drain − Source Voltage (V) ID, Drain Current (A)<br>Figure 2. On−Resistance Variation with<br>Figure 1. On Region Characteristics<br>Drain Current and Gate Voltage<br>1.8 15<br>ID = 0.2 A ID = 0.2 A<br>1.6 VGS = 2.7 V<br>12<br>1.4<br>9<br>1.2 TA = 125 ° C<br>6<br>1.0<br>3<br>0.8 TA = 25 ° C<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 4.5 5<br>TJ, Junction Temperature ( � C) VGS, Gate to Source Voltage (V)<br>Figure 3. On Resistance Variation  Figure 4. On−Resistance Variation with<br>with Temperature Gate−to−Source Voltage<br>0.2 0.5<br>VDS = 5 V TJ = −55 ° C 0.2 VGS = 0 V<br>0.15 TJ = 25 ° C 0.1 TJ = 125 ° C<br>TJ = 125 ° C TJ  = 25 ° C<br>0.01<br>0.1<br>TJ = −55 ° C<br>0.001<br>0.05<br>0.0 0.0001<br>0.5 1 1.5 2 2.5 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, Gate to Source Voltage (V) VSD, Body Diode Forward Voltage (V)<br>On−Resistance<br>, Normalized Drain − Source<br>, Drain − Source Current (A)<br>ID<br>DS(on)<br>R<br>) �<br>, Normalized   On−Resistance (<br>DS(on)<br>R<br>DS(on),<br>Drain − Source On−Resistance R<br>, Drain Current (A)<br>ID<br>, Reverse Drain Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics** 

**Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature** 

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**3** 

**FDC6301N** 

## **TYPICAL CHARACTERISTICS** (continued) 

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5 30<br>ID = 0.2 A VDS = 5 V 20<br>4<br>VDS = 10 V 10 Ciss<br>3 Coss<br>VDS = 15 V 5<br>2<br>3<br>1 2<br>f = 1 MHz Crss<br>VGS = 0 V<br>0 1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.5 1 2 5 10 25<br>Qg, Gate Charge (nC) VDS, Drain to Source Voltage (V)<br>Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics<br>1 5<br>Single Pulse<br>0.5 1 ms R � JA = See Note 1b<br>10 ms 4 T A  = 25 ° C<br>100 ms<br>0.2<br>3<br>1 s<br>0.1<br>DC<br>This Area is<br>2<br>0.05 Limited by RDS(on)<br>VGS = 2.7 V<br>Single Pulse 1<br>0.02 R � JA  = See Note 1b<br>TA = 25 ° C<br>0.01 0<br>0.5 1 2 5 10 15 25 35 0.01 0.1 1 10 100 300<br>VDS, Drain − N−Source Voltage (V) Single Pulse Time (s)<br>Figure 10. Maximum Safe Operating Area Figure 9. Single Pulse Maximum<br>Power Dissipation<br>1<br>0.5 D = 0.5<br>R � JA (t) = r(t) * R � JA<br>0.2  0.2 R � JA = See Note 1b<br>0.1  0.1 P(pk)<br> 0.05 t1<br>0.05<br> 0.02 t2<br> 0.01<br>0.02 Single pulse T J − T A  = P * R � JA  (t)<br>Duty Cycle, D = t1/t2<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 300<br>t1, Time (s)<br>Capacitance (pF)<br>, Gate − Source Voltage (V)<br>GS<br>V<br>Power (W)<br>, Drain Current (A)<br>ID<br>Thermal Resistance<br>r(t), Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Figure 11. Transient Thermal Response Curve** 

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 

SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TSOT23 6−Lead** CASE 419BL ISSUE A 

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## DATE 31 AUG 2020 

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SCALE 2:1<br>**----- End of picture text -----**<br>


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**DOCUMENT NUMBER: 98AON83292G DESCRIPTION: TSOT23 6−Lead** 

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GENERIC<br>MARKING DIAGRAM*<br>XXX M �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “  � ”,<br>may or may not be present. Some products<br>may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>**----- End of picture text -----**<br>


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**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2018 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

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