FD300R17KE4PHOSA1

IGBT Module, Single Chopper, 300 A, 1.95 V, 150 °C, Module

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Manufacturer: INFINEON
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Trans
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 7Pins
Product Range: C
IGBT Technology: IGBT 4 [Trench/Field Stop]
IGBT Termination: Tab
Power Dissipation: -
IGBT Configuration: Single Chopper
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 300A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 300A
Collector Emitter Voltage Max: 1.7kV
Collector Emitter Voltage V(br)ceo: 1.7kV
Collector Emitter Saturation Voltage: 1.95V
Collector Emitter Saturation Voltage Vce(on): 1.95V

Delivery and price
Units per pack	10
Price	127.02 €
Current stock	10+
Lead time	30 days

Datasheet

## FD300R17KE4P 

VCES = 1700V IC nom = 300A / ICRM = 600A 

- 3-Level-Applikationen 

- • Chopper-Anwendungen • Motorantriebe 

- 

- CEsat 

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- VCEsat 

- 

- 

- 

• Thermisches Interface Material bereits aufgetragen 

- 3-level-applications 

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- 

- 

- CEsat 

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- VCEsat 

- 

- 

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**Digit** 

Datasheet www.infineon.com 

2019-04-02 

FD300R17KE4P 

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## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|1700||V|
|---|---|---|---|---|---|---|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 80°C, Tvj max= 175°C|ICDC|300|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|600|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 300 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,95<br>2,35<br>2,45|2,30|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 12,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||3,05||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||2,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||24,5||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,81||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,24<br>0,28<br>0,30||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,05<br>0,055<br>0,055||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,70<br>0,74<br>0,78||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 300 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,13<br>0,15||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 300 A, VCE= 900 V, Lσ= 60 nH<br>di/dt = 4800 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||63,0<br>86,0<br>93,0||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 300 A, VCE= 900 V, Lσ= 60 nH<br>du/dt = 3600 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 2,4Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||55,0<br>90,0<br>100||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||1400||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,114|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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FD300R17KE4P 

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## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|14500<br>14000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||270<br>340<br>360||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,0<br>105<br>120||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||28,0<br>58,0<br>68,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,177|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Revers�/�Diode,�Reverse Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|14500<br>14000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,177|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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FD300R17KE4P 

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## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||0,70||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm|
|Gewicht<br>Weight||G||340||g|



Lagerung und Transport von Modulen mit TIM => siehe AN 2012-07 Storage and shipment of modules with TIM => see AN 2012-07 

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Datasheet 

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## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,�Brems-Chopper�(typisch) output�characteristic�IGBT,�Brake-Chopper�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,�Brems-Chopper�(typisch) output�characteristic�IGBT,�Brake-Chopper�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
600 600<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>Tvj = 150°C VGE = 12 V<br>VGE = 10V<br>500 500 VGE = 9V<br>VGE = 8V<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,�Brems-Chopper�(typisch) transfer�characteristic�IGBT,�Brake-Chopper�(typical)** IC�=�f�(VGE) VCE�=�20�V 

**Schaltverluste�IGBT,�Brems-Chopper�(typisch) switching�losses�IGBT,�Brake-Chopper�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�2.4� Ω ,�RGoff�=�2.4� Ω ,�VCE�=�900�V 

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**----- Start of picture text -----**<br>
600 200<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 180 E off , T vj  = 125°C<br>Eoff, Tvj = 150°C<br>500<br>160<br>140<br>400<br>120<br>300 100<br>80<br>200<br>60<br>40<br>100<br>20<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =300A,V CE =900V<br>300 1<br>Eon, Tvj = 125°C ee ZthJH : IGBT<br>Eon, Tvj = 150°C<br>270 E off , T vj  = 125°C<br>Eoff, Tvj = 150°C<br>240<br>7<br>210 y io aee [|]<br>0,1 =<br>a ST Tey<br>180<br>WA Pr<br>ne2a<br>150 JZ a<br>120 41/ Wid<br>4 / 0,01 ynil<br>90<br>fn eee eeeerie<br>60<br>i: 1 2 3 4<br>30 ri[K/W]: 0,008097 0,0451 0,04271 0,01814<br>τ i[s]: 0,0008055 0,03331 0,1352 1,053<br>BERR REREE a |<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Riickw.-Arbeitsber. IGBT, Brems-Chopper (RBSOA) Durchlasskennlinie der Diode, Brems-Chopper (typisch)<br>reverse bias safe operating area IGBT, Brake-Chopper forward characteristic of Diode, Brake-Chopper (typical)<br>(RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =24 Ω ,T vj =150°C<br>800 600<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>700 Tvj = 150°C<br>500<br>600<br>| 400<br>500 |<br>|<br>|<br>400 | 300<br>|<br>|<br>300 |<br>| 200<br>|<br>200 | |<br>|<br>| 100<br>100 |<br>A7<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f il F) Erec =f(R G)<br>RGon =24 Ω ,V CE =900V IF =300A,V CE =900V<br>90 100<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>80 = Erec, Tvj = 150°C | = [_] oO 7 90 (ET Erec, Tvj = 150°C C<br>a<br>a<br>7<br>70 Zz 80<br>a<br>7<br>/ 70<br>60<br>7<br>/ 60 ~“.<br>7<br>50<br>7<br>/ 50<br>40 / SL<br>40<br>30<br>30<br>20<br>fo 20 te>—<br>10 10<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18 20 22 24<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJH =f (t) IF =f(V F)<br>1 600<br>ZthJH : Diode Tvj = 25°C<br>Tvj = 125°C<br>Tvj = 150°C<br>500<br>400<br>0,1 300<br>200<br>100<br>i: 1 2 3 4<br>ri[K/W]: 0,01345 0,06861 0,06934 0,02553<br>τ i[s]: 0,0006914 0,0267 0,1083 0,8363<br>| 7<br>0,01 7 0 oat<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VF [V]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

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FD300R17KE4P 

ZthJH 

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**----- Start of picture text -----**<br>
1<br>ZthJH : Diode<br>0,1<br>i: 1 2 3 4<br>ri[K/W]: 0,01345 0,06861 0,06934 0,02553<br>τ i[s]: 0,0006914 0,0267 0,1083 0,8363<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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FD300R17KE4P 

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## **Schaltplan�/�Circuit�diagram** 

## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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Datasheet 

## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS**

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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