FD300R12KE3HOSA1
IGBT Module, Single Chopper, 480 A, 1.7 V, 1.47 kW, 150 °C, Module
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: 1.47kW
- IGBT Configuration: Single Chopper
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 480A
- Power Dissipation Pd: 1.47kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 480A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 105.25 € |
| Current stock | 10+ |
| Lead time | 30 days |
IGBT-Module FD300R12KE3 IGBT-Modules ## **Technische Information / technical information** ## **Höchstzulässige Werte / maximum rated values** ## **Elektrische Eigenschaften / electrical properties** |Kollektor Emitter Sperrspannung<br>collector emitter voltage|Tvj= 25°C|VCES|1200|V| |---|---|---|---|---| |Kollektor Dauergleichstrom|Tc= 80°C|IC, nom|300|A| |DC collector current|Tc= 25°C|IC|480|A| |repetitive peak collector current<br>Periodischer Kollektor Spitzenstrom|tp= 1ms, Tc= 80°C|ICRM|600|A| |Gesamt Verlustleistung<br>total power dissipation|Tc= 25°C, Transistor|Ptot|1470|W| |gate emitter peak voltage<br>Gate Emitter Spitzenspannung||VGES|+/- 20|V| |DC forward current<br>Dauergleichstrom||IF|300|A| |repetitive peak forward current<br>Periodischer Spitzenstrom|tp= 1ms|IFRM|600|A| |Grenzlastintegral<br>I²t value|VR= 0V, tp= 10ms, Tvj= 125°C|I²t|19|k A²s| |Isolations Prüfspannung<br>insulation test voltage|RMS, f= 50Hz, t= 1min.|VISOL|2,5|kV| ## **Charakteristische Werte / characteristic values** ## **Transistor Wechselrichter / transistor inverter** |**Transistor Wechselrichter / transistor inverter**|**Transistor Wechselrichter / transistor inverter**||**min.**|**typ.**|**max.**|| |---|---|---|---|---|---|---| |Kollektor Emitter Sättigungsspannung<br>collector emitter saturation voltage|IC= 300A, VGE= 15V, Tvj= 125°C<br>IC= 300A, VGE= 15V, Tvj= 25°C|VCEsat|-<br>-|1,7<br>2,0|2,15<br>-|V<br>V| |gate threshold voltage<br>Gate Schwellenspannung|IC= 12mA, VCE= VGE, Tvj= 25°C|VGE(th)|5,0|5,80|6,50|V| |Gateladung<br>gate charge|VGE= -15V...+15V|QG|-|2,80|-|µC| |Eingangskapazität<br>input capacitance|f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V|Cies|-|21|-|nF| |reverse transfer capacitance<br>Rückwirkungskapazität|f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V|Cres|-|0,85|-|nF| |collector emitter cut off current<br>Kollektor Emitter Reststrom|VCE= 1200V, VGE= 0V, Tvj= 25°C|ICES|-|-|5|mA| |gate emitter leakage current<br>Gate Emitter Reststrom|VCE= 0V, VGE= 20V, Tvj= 25°C|IGES|-|-|400|nA| |||||||| |prepared by: MOD-D2; Mark Münzer|date of publication: 2002-10-02|||||| |approved: SM TM; Wilhelm Rusche|revision: 3.0|||||| DB_FD300R12KE3_3.0 1 (8) 2002-10-02 IGBT-Module FD300R12KE3 IGBT-Modules ## **Technische Information / technical information** ## **Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter** |**Charakteristische Werte / characteristic values**<br>**Transistor Wechselrichter / transistor inverter**|||||| |---|---|---|---|---|---| |**Transistor Wechselrichter / transistor inverter**||**min.**|**typ.**|**max.**|| |IC= 300A, VCC= 600V|||||| |VGE= ±15V, RG= 2,4Ω, Tvj= 25°C|td,on|-|0,25|-|µs| |VGE= ±15V, RG= 2,4Ω, Tvj= 125°C||-|0,30|-|µs| |IC= 300A, VCC= 600V|||||| |VGE= ±15V, RG= 2,4Ω, Tvj= 25°C|tr|-|0,09|-|µs| |VGE= ±15V, RG= 2,4Ω, Tvj= 125°C||-|0,10|-|µs| |IC= 300A, VCC= 600V|||||| |VGE= ±15V, RG= 2,4Ω, Tvj= 25°C|td,off|-|0,55|-|µs| |VGE= ±15V, RG= 2,4Ω, Tvj= 125°C||-|0,65|-|µs| |IC= 300A, VCC= 600V|||||| |VGE= ±15V, RG= 2,4Ω, Tvj= 25°C|tf|-|0,13|-|µs| |VGE= ±15V, RG= 2,4Ω, Tvj= 125°C||-|0,18|-|µs| |IC= 300A, VCC= 600V, Lσ= 80nH<br>VGE= ±15V, RG= 2,4Ω, Tvj= 125°C|Eon|-|25|-|mJ| |VGE= ±15V, RG= 2,4Ω, Tvj= 125°C<br>IC= 300A, VCC= 600V, Lσ= 80nH|Eoff|-|44|-|mJ| |VCC= 900V, VCEmax= VCES- LσCE·di/dt<br>tP ≤10µs, VGE ≤15V, TVj ≤125°C|ISC|-|1200|-|A| ||LσCE|-|20|-|nH| |Tc= 25°C|RCC´/EE´|-|0,7|-|mΩ| |**Charakteristische Werte / characteristic values**|||||| |IF= 300A, VGE= 0V, Tvj= 125°C<br>IF= 300A, VGE= 0V, Tvj= 25°C|VF|-<br>-|1,65<br>1,65|2,15<br>-|V<br>V| |IF= 300A, -diF/dt= 3000A/µs|||||| |VR= 600V, VGE= -15V, Tvj= 25°C|IRM|-|210|-|A| |VR= 600V,VGE= -15V,Tvj= 125°C||-|270|-|A| |IF= 300A, -diF/dt= 3000A/µs|||||| |VR= 600V, VGE= -15V, Tvj= 25°C|Qr|-|30|-|µC| |VR= 600V,VGE= -15V,Tvj= 125°C||-|56|-|µC| |IF= 300A, -diF/dt= 3000A/µs|||||| |VR= 600V, VGE= -15V, Tvj= 25°C|Erec|-|14|-|mJ| |VR= 600V,VGE= -15V,Tvj= 125°C||-|26|-|mJ| Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulinduktivität stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip ## **Charakteristische Werte / characteristic values Inversdiode / free-wheel diode** Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Ausschaltenergie pro Puls reverse recovery energy DB_FD300R12KE3_3.0 2002-10-02 2 (8) IGBT-Module FD300R12KE3 IGBT-Modules ## **Technische Information / technical information** ## **Charakteristische Werte / characteristic values Chopperdiode / chopper diode** |**Chopperdiode / chopper diode**||||||| |---|---|---|---|---|---|---| |Durchlassspannung<br>forward voltage|IF=400A, VGE= 0V, Tvj= 25°C<br>IF= 400A, VGE= 0V, Tvj= 125°C|VF|-<br>-|1,65<br>1,65|2,1<br>-|V<br>V| ||IF=400A, -diF/dt= 4000A/µs|||||| |Rückstromspitze<br>peak reverse recovery current|VR= 600V, VGE= -15V, Tvj= 25°C|IRM|-|280|-|A| ||VR= 600V,VGE= -15V,Tvj= 125°C||-|360|-|A| ||IF=400A, -diF/dt= 4000A/µs|||||| |Sperrverzögerungsladung<br>recovered charge|VR= 600V, VGE= -15V, Tvj= 25°C|Qr|-|40|-|µC| ||VR= 600V,VGE= -15V,Tvj= 125°C||-|75|-|µC| ||IF=400A, -diF/dt= 4000A/µs|||||| |Ausschaltenergie pro Puls<br>reverse recovery energy|VR= 600V, VGE= -15V, Tvj= 25°C|Erec|-|18|-|mJ| ||VR= 600V,VGE= -15V,Tvj= 125°C||-|34|-|mJ| |**Thermische Eigenschaften / thermal properties**||||||| ||Transistor Wechelr. / transistor inverter||-|-|0,085|K/W| |Innerer Wärmewiderstand; DC<br>thermal resistance, junction to case; DC|Inversdiode / free wheel diode|RthJC|-|-|0,150|K/W| ||Chopper Diode / chopper diode||-|-|0,125|K/W| |thermal resistance, case to heatsink<br>Übergangs Wärmewiderstand|pro Modul / per module<br>λPaste= 1W/m*K /λgrease= 1W/m*K|RthCK|-|0,010|-|K/W| |maximum junction temperature<br>Höchstzulässige Sperrschichttemp.||Tvj max|-|-|150|°C| |Betriebstemperatur<br>operation temperature||Tvj op|-40|-|125|°C| |Lagertemperatur<br>storage temperature||Tstg|-40|-|125|°C| ## **Mechanische Eigenschaften / mechanical properties** Gehäuse, siehe Anlage case, see appendix |Innere Isolation<br>internal insulation||||Al2O3||| |---|---|---|---|---|---|---| |CTI<br>comperative tracking index||||425||| |mounting torque<br>Anzugsdrehmoment, mech. Befestigung|Schraube M6 / screw M6|M|3,0|-|6,0|Nm| |Anzugsdrehmoment, elektr. Anschlüsse<br>terminal connection torque|Anschlüsse / terminals M6|M|2,5|-|5,0|Nm| |weight<br>Gewicht||G||340||g| Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. DB_FD300R12KE3_3.0 2002-10-02 3 (8) ## **Technische Information / technical information** IGBT-Module FD300R12KE3 IGBT-Modules **==> picture [437 x 308] intentionally omitted <==** **----- Start of picture text -----**<br> Ausgangskennlinie (typisch) IC= f(VCE)<br>output characteristic (typical) VGE= 15V<br>600 ’<br>,<br>,<br>Tvj = 25°C ,<br>500 Tvj = 125°C ’ , ,<br>,<br>,<br>’<br>400 ’ ,<br>,<br>,<br>,<br>,<br>300 , ,<br>,<br>,<br>,<br>y<br>200 ,<br>,<br>,<br>”<br>,<br>,<br>100 , ,<br>7<br>,<br>,<br>-<br>a<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Ausgangskennlinienfeld (typisch) output characteristic (typical)** **IC= f(VCE) T = 125°C vj** **==> picture [398 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> 600 ,a7 7<br>’ ’ ,<br>of ZY<br>an “ --<br>VGE=19V ton, , cee<br>500 VGE=17VVGE=15V a, ‘,,4aor 7’ r,’, 7 a- a - 7ae _o<br>VGE=13V ,, , Y. ,--<br>400 VGE=11V 4aafa7 ’ , , ‘ - -<br>VGE=9V ‘va,f , ,’ - , o<br>1, , ,<br>300 "46 ‘a , , , , , , id<br>/", ’ , , s , , eee wee eee See<br>nao, ae<br>oe a<br>200 po4 ato af ” fF7,7, ft - - . - . - -<br>4.06 , , -<br>reggt , so, -<br>tere<br>100 4aie444" 4 vA 4,4 ca 0°<br>0 - . oF a abe4%é<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> DB_FD300R12KE3_3.0 2002-10-02 4 (8) ## **Technische Information / technical information** IGBT-Module FD300R12KE3 IGBT-Modules **==> picture [437 x 301] intentionally omitted <==** **----- Start of picture text -----**<br> Übertragungscharakteristik (typisch) IC= f(VGE)<br>transfer characteristic (typical) VCE= 20V<br>600<br>,<br>,<br>/<br>wane Tvj=25°C , ,<br>500 ,<br>Tvj=125°C ,<br>se<br>,<br>,<br>400 ,<br>oS<br>,<br>,<br>,<br>300 - ,<br>,<br>,<br>,<br>200 , ,<br>,<br>¢<br>,<br>,<br>100 ,<br>,<br>4<br>- ,<br>.* -<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Durchlasskennlinie der Dioden (typisch) IF= f(VF) forward caracteristic of diodes (typical)** **==> picture [407 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 600 7 ] 800<br>’ |<br>‘ |<br>525 --eeee Tvj = 25°C va ’ || 700<br>‘ |<br>Tvj = 125°C ’ |<br>450 , m7 ’ || 600<br>. |<br>, |<br>375 , ’ ’ ’ ||| 500<br>, |<br>Y |<br>300 , , | 400<br>, |<br>225 oa , , ’ ||| 300<br>, , , ||<br>150 ’ , - , , ||| 200<br>“ |<br>75 4 “ | 100<br>Pa 4 ||<br>- s |<br>0 7 | 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VF [V]<br> [A] of inverse diodeIF [A] of chopper diodeIF<br>**----- End of picture text -----**<br> DB_FD300R12KE3_3.0 2002-10-02 5 (8) ## **Technische Information / technical information** IGBT-Module FD300R12KE3 IGBT-Modules **Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=±15V, RG=2,4** Ω **, VCE=600V, Tvj=125°C** **==> picture [397 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>7<br>7<br>80 Eon 7 7<br>Eoff<br>70 wa eee Erec | -<br>~*~<br>60 7<br>a<br>a<br>50 2<br>Uc<br>~<br>40 a<br>“7<br>~<br>30 “7 2 eee ee<br>20 a tee<br>10 aa<br>oe<br>0<br>0 100 200 300 400 500 600<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br> **Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) Switching losses (typical) VGE=±15V, IC=300A, VCE=600V, Tvj=125°C** **==> picture [397 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160 Eon<br>Eoff<br>140 Erec<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 4 8 12 16 20 24 28<br>RG [ Ω ]<br>E [mJ]<br>**----- End of picture text -----**<br> DB_FD300R12KE3_3.0 2002-10-02 6 (8) ## **Technische Information / technical information** IGBT-Module FD300R12KE3 IGBT-Modules ## **Transienter Wärmewiderstand ZthJC = f (t) Transient thermal impedance** **==> picture [389 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0,1<br>Zth : IGBT<br>0,01 Zth : Inversdiode<br>Zth : Diode Chopper<br>0,001<br>0,001 0,01 0,1 1<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> |**i**|**1**|**2**|**3**|**4**| |---|---|---|---|---| |**ri [K/kW] : IGBT**|**35,73**|**42,82**|**4,84**|**1,61**| |τ**i [s] : IGBT**|**6,499E-02**|**2,601E-02**|**2,364E-03**|**1,187E-05**| |**ri [K/kW] :Inversdiode**|**62,99**|**75,66**|**8,52**|**2,83**| |τ**i [s] :Inversdiode**|**6,499E-02**|**2,601E-02**|**2,364E-03**|**1,187E-05**| |**ri [K/kW] :Chopper Diode**|**52,51**|**63,02**|**7,10**|**2,37**| |τ**i [s] :Chopper Diode**|**6,499E-02**|**2,601E-02**|**2,364E-03**|**1,187E-05**| **==> picture [437 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> Sicherer Arbeitsbereich (RBSOA)<br>Reverse bias safe operation area (RBSOA) VGE=±15V, Tvj=125°C, RG=2,4 Ω<br>700<br>600<br>Z<br>|<br>500 |<br>|<br>400 ___ |<br>IC,Chip<br>IC,Modul<br>300 |<br>—_| ||<br>200 |<br>|<br>|<br>100<br>|<br>|<br>0<br>0 200 400 600 800 1000 1200 1400<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> DB_FD300R12KE3_3.0 2002-10-02 7 (8) ## **Technische Information / technical information** **==> picture [224 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>FD300R12KE3<br>IGBT-Modules<br>Gehäusemaße / Schaltbild<br>Package outline / Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [466 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> Kriechstrecke<br>20 mm<br>creepage distance<br>Luftstrecke<br>11 mm<br>clearance distance<br>**----- End of picture text -----**<br> DB_FD300R12KE3_3.0 2002-10-02 8 (8) ## **Nutzungsbedingungen** Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen. Sollten Sie von uns Produktinformationen benötigen, die über den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem für Sie zuständigen Vertriebsbüro in Verbindung (siehe www.eupec.com, Vertrieb&Kontakt). Für Interessenten halten wir Application Notes bereit. 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Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten. ## **Terms & Conditions of usage** The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Risk and Quality Assessments; - the conclusion of Quality Agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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