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FD150R12RT4HOSA1
IGBT Module, Single Chopper, 150 A, 1.75 V, 790 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Tra
- SVHC: No SVHC (23-Jan-2024)
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: 790W
- IGBT Configuration: Single Chopper
- Transistor Mounting: Panel
- DC Collector Current: 150A
- Power Dissipation Pd: 790W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 85.6 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## FD150R12RT4 VCES = 1200V IC nom = 150A / ICRM = 300A - - Motorantriebe - USV-Systeme - - - CEsat - • T yop = 150°C • VCEsat mit - - Standardgehäuse - - - - - - CEsat - • T - VCEsat - - 1 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FD150R12RT4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FD150R12RT4<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>790<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 5,70 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,90<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,30<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,50<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 3400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>8,50<br>13,5<br>15,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>8,50<br>13,5<br>15,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,19<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,092<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 > IGBT-ModuleIGBT-modules FD150R12RT4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode-Chopper�/�Diode-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|4100<br>4000|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,65<br>1,65|2,20|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||120<br>140<br>150||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||14,0<br>24,0<br>28,0||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||5,00<br>8,50<br>10,0||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,31|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| date�of�publication:�2013-11-05 revision:�2.3 prepared�by:�MK approved�by:�WR 3 > IGBT-ModuleIGBT-modules FD150R12RT4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Revers�/�Diode,�Reverse Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|600<br>550|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,65<br>1,65|2,20|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||55,0<br>60,0<br>65,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,00<br>9,00<br>10,0||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 1300 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,00<br>3,20<br>3,60||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,84|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,405||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| date�of�publication:�2013-11-05 revision:�2.3 prepared�by:�MK approved�by:�WR 4 > IGBT-ModuleIGBT-modules FD150R12RT4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||17,0<br>20,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||17,0<br>9,5|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,05||K/W| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,65||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00|-|5,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm| |Gewicht<br>Weight||G||160||g| Power Cycling Zuverlässigkeit bei Tvjop=125°C: - entspricht gültiger Spezifikation für Standard Module bei Tvjmax=125°C; 300.000 Zyklen @ dTj=50K Power Cycling Capability at Tvjop=125°C: - according to valid specification for standard modules at Tvjmax=125°C; 300.000 cycles @ dTj=50K date�of�publication:�2013-11-05 revision:�2.3 prepared�by:�MK approved�by:�WR 5 ## IGBT-Module IGBT-modules Technische Information FD150R12RT4 / Technical Information **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 B VGE = 17V oe<br>E Tvj = 150°C LS) VGE = 15V |<br>VGE = 13V<br>240 240 VGE = 11V<br>e— |} [fie] |} i7eeane<br>VGE = 9V<br>e e<br>210 210<br>ee [Ls /ee<br>180 180<br>re /; ;<br>150 150<br>120 120<br>ee ee ee ee<br>90 [fo 90<br>ee ‘ ee ee Ars / |<br>/<br>60 60<br>30 30<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C 45 Eoff, Tvj = 125°C<br>y Tvj = 150°C e Eon, Tvj = 150°C Litt ty<br>Eoff, Tvj = 150°C<br>240 40<br>oes ee ee Sl sees<br>Pi t<br>210 35<br>| Eve E E<br>ee<br>180 30<br>pt [|] ; A<br>Re 72a<br>150 25<br>120 20<br>fliliAt | SERREEP 228<br>ee Ae eee cee<br>90 15<br>ee ee me<br>60 10<br>i eee eecee<br>30 5<br>0 0<br>wi | | | tT | Pe<br>5 6 7 8 9 10 11 12 13 0 30 60 90 120 150 180 210 240 270 300<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 6 IGBT-Module IGBT-modules ## FD150R12RT4 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =150A,V CE =600V<br>40 1<br>Eon, Tvj = 125°C | ZthJC : IGBT ee<br>36 mH Eoff, Tvj = 125°C J ill i i 4 HH—roU== r=_—— E E0...HH}S00; tHee oessana<br>EEonoff, T, Tvjvj = 150°C = 150°C PTa [TT] eeT eeeT<br>32<br>— ——— |<br>a PTT TTI ETE ETT]<br>28 aaT a<br>0,1<br>24 Pf ft | foe TF fd | SS aero ee0 eet!<br>4ca a<br>20 Pf fo Leb TT ft fd | 2 | |<br>16 | wa |<br>| by | | ft | tees ATT TT<br>0,01<br>12 aro LATECETIE ETE Tl<br>8 Pt fT } fo) tt pt dd aPT2eee eee<br>i: 1 2 3 4<br>4 PLE EE PT t TT T r τ ii[K/W]: [s]: 0,0114 0,01 t 0,0627 0,02 T 0,0608 0,05 0,0551 0,1<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode-Chopper (typisch) Schaltverluste Diode-Chopper (typisch)<br>forward characteristic of Diode-Chopper (typical) switching losses Diode-Chopper (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon =1.1 Ω ,V CE =600V<br>300 14<br>Tvj = 25°C Erec, Tvj = 125°C<br>270 Tvj = 125°C Erec, Tvj = 150°C<br>F Tvj = 150°C y 12 EJ<br>hast | T T<br>240<br>10<br>210<br>180<br>PoceEeeeHA) CEE<br>8<br>150 PCA To<br>6<br>120<br>90 SOGGeeny seen pos<br>4<br>60<br>SOGG00 40000; 2 anne<br>SEREP Ane<br>30<br>BE BE ZAR<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0 30 60 90 120 150 180 210 240 270 300<br>VF [V] IF [A]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br> 7 ## IGBT-Module IGBT-modules ## FD150R12RT4 **==> picture [485 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(R G) ZthJC =f(t<br>IF i604. V CE = 600 V 0<br>14 ——_ Erec, Tvj = 125°C 1 S ZthJC : Diode oon<br>H— ee<br>Erec, Tvj = 150°C<br>12 Ey— _____. |ca g E E Ht HH<br>10<br>aa a ann Milian<br>0,1<br>8 — Pt<br>a ETE EH EH<br>ee |<br>6 in ae ot<br>0,01<br>4<br>a eee<br>aYT TT TE TTT rTee TTT eeTT TTT|<br>2 i: 1 2 3 4<br>ri[K/W]: 0,0186 0,1023 0,0992 0,0899<br>τ i[s]: 0,01 0,02 0,05 0,1<br>PCAC) LLLEt Ebro om c<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode, Revers (typisch) Transienter Warmewiderstand Diode, Revers<br>forward characteristic of Diode, Reverse (typical) transient thermal impedance Diode, Reverse<br>IF =f(V F) ZthJC = f (t)<br>100 1<br>Tvj = 25°C ZthJC : Diode<br>90 Tvj = 125°C<br>F Tvj = 150°C y —<br>80 = TT P y | Ty | aa<br>70 P} Td PT CEE<br>| tty lt | LAE 4 ET RaLTILTI RR EAHT R<br>60<br>EERE EREE eee<br>50 0,1 OE ATE EAE ALLL<br>J a<br>See if Ane Yr [| YT oTee TT ee TTT|TT TTT]<br>40 See rT 7E TT<br>30<br>i eee a | |<br>20 Pt | |) | vr] dT td ReVI EE EET| el<br>i: 1 2 3 4<br>10 SRGn0 7400000 e |e | r τ ii[K/W]: [s]: 0,0504 0,01 0,2772 0,02 0,2688 0,05 0,2436 0,1<br>Ba pe Zane Toon<br>0 0,01<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0,001 0,01 0,1 1 10<br>VF [V] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]IF [K/W]thJC<br>Z<br>**----- End of picture text -----**<br> 8 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FD150R12RT4 **==> picture [217 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br> **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **==> picture [246 x 139] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�MK date�of�publication:�2013-11-05<br>approved�by:�WR revision:�2.3<br>**----- End of picture text -----**<br> 9 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FD150R12RT4 ## **Nutzungsbedingungen** ## application. 10
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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