FCPF7N60YDTU

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ 

## MOSFET – N-Channel, SUPERFET ~~—e~~ 

## 600 V, 7 A, 600 m FCPF7N60, FCP7N60 

## **Description** 

SUPERFET MOSFET is **onsemi** ’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. 

## **Features** 

- 650 V @ TJ = 150°C 

- RDS(on) = 530 m (Typ.) 

- Ultra Low Gate Charge (Typ. Qg =  23 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF) 

- 100% Avalanche Tested 

**==> picture [190 x 49] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS RDS(on) MAX ID MAX<br>a 600 V 600 m ee  @ 10 V ee 7 A* ee<br>*Drain current limited by maximum junction<br>temperature.<br>**----- End of picture text -----**<br>


**==> picture [77 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G<br>S<br>N−Channel<br>**----- End of picture text -----**<br>


**==> picture [186 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−220 Fullpack, 3−Lead<br>G D / TO−220F−3SG<br>S CASE 221AT<br>TO−220−3LD<br>G D CASE 340AT<br>S<br>**----- End of picture text -----**<br>


- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

## **MARKING DIAGRAM** 

- LCD/LED/PDP TV 

- Solar Inverter 

- AC−DC Power Supply 

**==> picture [166 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
FCP(F)<br>7N60<br>AYWWZZ<br>Ny<br>FCP(F)7N60 = Specific Device Code<br>A = Assembly Location<br>YWW = Date Code (Year & Week)<br>ZZ = Assembly Lot<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|FCPF7N60|FCPF7N60<br>TO−220−3<br>FullPak|1000 Units / Tube|
|FCP7N60|TO−220−3|1000 Units / Tube|



Publication Order Number: **FCPF7N60/D** 

**1** 

© Semiconductor Components Industries, LLC, 2005 **January, 2024 − Rev. 3** 

## **FCPF7N60, FCP7N60** 

## **MOSFET MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**MOSFET MAXIMUM RATINGS**<br>~~a~~|**MOSFET MAXIMUM RATINGS**(TC = 25C = 25= 25°C unless otherwise noted)<br>|**MOSFET MAXIMUM RATINGS**(TC = 25C = 25= 25°C unless otherwise noted)<br>||~~a~~||
|---|---|---|---|---|---|
|**Symbol**<br>~~SS~~<br>~~a~~|**Parameter**<br>~~SS~~<br>||**FCP7N60**<br>~~SS~~|**FCPF7N60**<br>~~SS~~<br>~~a~~|**Unit**<br>~~SS~~|
|VDSS<br>~~SS~~<br>~~a~~|Drain−Source Voltage<br>~~SS~~<br>~~aa~~||600<br>~~SS~~<br>~~a~~<br>~~eeeee~~||V<br>~~SS~~<br>~~eee~~|
|ID<br>~~a ~~<br>~~SS~~|Drain Current<br> ~~a~~<br>~~SS~~|− Continuous (TC= 25°C)<br>~~a~~|7<br>~~ee~~|7*<br>~~a~~<br>~~eee~~|A<br>~~eee~~|
|||− Continuous (TC= 100°C)<br>~~a~~<br>~~SS~~|4.4<br>~~ee~~<br>~~SS~~|4.4*<br>~~a~~<br>~~eee~~<br>~~SS~~||
|IDM<br> <br>~~SS~~<br>~~SS~~|Drain Current<br> ~~a ~~<br>~~SS~~<br>~~—~~|− Pulsed (Note 1)<br> ~~a~~<br>~~SS~~|21<br>~~ee ~~<br>~~SS~~|21*<br> ~~eee~~<br>~~SS~~|A<br>~~eee~~|
|VGSS<br>~~SS~~<br>~~SS~~|Gate−Source Voltage<br>~~SS~~<br>~~SS~~<br>~~—~~||±30<br>~~SSSS~~||V|
|EAS<br>~~SS~~<br>~~SS~~|Single Pulsed Avalanche Energy (Note 2)<br>~~SS~~<br>~~SS~~<br>~~—~~||230<br>~~SSSS~~||mJ|
|IAR<br>~~SS ~~<br>~~a~~|Avalanche Current (Note 1)<br> ~~—~~<br>~~a~~<br>~~a~~||7||A|
|EAR<br>~~a~~|Repetitive Avalanche Energy (Note 1)<br>~~a~~<br>~~a~~||8.3||mJ|
|dv/dt<br>~~a~~|Peak Diode Recovery dv/dt (Note 3)||4.5||V/ns|
|PD|Power Dissipation|(TC= 25°C)|83|31|W|
|||− Derate Above 25°C|0.67|0.25|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150||°C<br>~~ee~~|
|TL<br>~~a a~~|Maximum Lead Temperature for Soldering,<br>1/8” from Case for 5 Seconds<br>~~a~~||300<br>~~ee~~||°C<br>~~ee~~<br>~~ee~~|



- Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

- *Drain current limited by maximum junction temperature. 

1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 3.5 A, VDD = 50 V, RG = 25 starting TJ = 25 ° C. 

3. ISD ≤ 7 A, di/dt ≤ 200 A/ s, VDD ≤ BVDSS, starting TJ = 25 ° C. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|---|
|**Symbol**<br>~~a ~~|**Parameter**<br> ~~a~~|**FCP7N60**|**FCPF7N60**|**Unit**|
|R JC|Thermal Resistance, Junction−to−Case, Max.|1.5|4.0|°C/W|
|R JA|Thermal Resistance, Junction−to−Ambient, Max.|62.5|62.5||



**www.onsemi.com** ~~—~~ 

**www.onsemi.com** 

**Share Feedback** Your Opinion Matters 

**2** 

**FCPF7N60, FCP7N60** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC = 25C = 25= 25C unless otherwise noted)<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>BVDSS<br>Drain−Source Breakdown Voltage<br>VGS= 0 V, ID= 250 A, TJ= 25°C<br>600<br>−<br>−<br>V<br>VGS= 0 V, ID= 250 A, TJ= 150°C<br>−<br>650<br>−<br>V<br>BVDSS<br>TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250 A, Referenced to 25°C<br>−<br>0.6<br>−<br>V/°C<br>BVDS<br>Drain−Source Avalanche Breakdown<br>VGS= 0 V, ID= 7 A<br>−<br>700<br>−<br>V<br>~~a~~<br>~~eeee~~<br>~~eeee~~<br>~~PC~~<br>~~TTTCSmSCiS~~<br>Cid<br>~~a~~<br>~~ee~~<br>~~ee ee~~|
|---|
|Voltage|
|IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 600 V, VGS= 0 V<br>−<br>−<br>1<br>A<br>VDS= 480 V, TC= 125°C<br>−<br>−<br>10<br>IGSSF<br>Gate−Body Leakage Current, Forward<br>VGS= 30 V, VDS= 0 V<br>−<br>−<br>100<br>nA<br>IGSSR<br>Gate−Body Leakage Current, Reverse<br>VGS= −30 V, VDS= 0 V<br>−<br>−<br>−100<br>nA<br>**ON CHARACTERISTICS**<br>VGS(th)<br>Gate Threshold Voltage<br>VDS= VGS, ID= 250 A<br>3.0<br>−<br>5.0<br>V<br>RDS(on)<br>Static Drain−Source On−Resistance<br>VGS= 10 V, ID= 3.5 A<br>−<br>0.53<br>0.6<br>~~ee~~<br>~~"~~<br>~~a~~<br>~~CSSEee~~<br>~~aOOO~~<br>~~dE~~<br>~~a a~~<br>~~CO~~|
|gFS<br>Forward Transconductance<br>VDS= 40 V, ID= 3.5 A<br>−<br>6<br>−<br>S<br>~~a~~|
|**DYNAMIC CHARACTERISTICS**|
|Ciss<br>Input Capacitance<br>VDS= 25 V, VGS= 0 V, f = 1 MHz<br>−<br>710<br>920<br>pF|
|Coss<br>Output Capacitance<br>−<br>380<br>500<br>pF|
|Crss<br>Reverse Transfer Capacitance<br>−<br>34<br>−<br>pF|
|Coss<br>Output Capacitance<br>VDS= 480 V, VGS= 0 V, f = 1 MHz<br>−<br>22<br>29<br>pF|
|Coss(eff.)<br>Effective Output Capacitance<br>VDS= 0 V to 400 V, VGS= 0 V<br>−<br>60<br>−<br>pF|
|**SWITCHING CHARACTERISTICS**<br>td(on)<br>Turn−On Delay Time<br>VDD= 300 V, ID= 7 A, VGS= 10 V,<br>RG= 25<br>(Note 4)<br>−<br>35<br>80<br>ns<br>tr<br>Turn−On Rise Time<br>−<br>55<br>120<br>ns<br>td(off)<br>Turn−Off Delay Time<br>−<br>75<br>160<br>ns<br>tf<br>Turn−Off Fall Time<br>−<br>32<br>75<br>ns<br>Qg<br>Total Gate Charge<br>VDS= 480 V, ID= 7 A, VGS= 10 V<br>(Note 4)<br>−<br>23<br>30<br>nC<br>Qgs<br>Gate−Source Charge<br>−<br>4.2<br>5.5<br>nC<br>Qgd<br>Gate−Drain Charge<br>−<br>11.5<br>−<br>nC<br>~~C_f—SSC*=g§w~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~es~~<br>~~ee ee~~<br>~~a~~<br>~~ee~~|
|**DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS**<br>IS<br>Maximum Continuous Drain−Source Diode Forward Current<br>−<br>−<br>7<br>A<br>ISM<br>Maximum Pulsed Drain−Source Diode Forward Current<br>−<br>−<br>21<br>A<br>VSD<br>Drain−Source Diode Forward Voltage<br>VGS= 0 V, IS= 7 A<br>−<br>−<br>1.4<br>V<br>trr<br>Reverse Recovery Time<br>VGS= 0 V, IS= 7 A, dIF/dt = 100 A/ s<br>−<br>360<br>−<br>ns<br>Qrr<br>Reverse Recovery Charge<br>−<br>4.5<br>−<br>C<br>~~CT OOOCOCOCOCSC“#NN"YCYNEN~~<br>~~E-_-E---_~~<br>~~Cf~~<br>~~SSSsSsSsSssSSsSSSse~~<br>~~SSS~~<br>~~**a**a~~<br>~~ee~~<br>~~a~~|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

4. Essentially independent of operating temperature typical characteristics. 

**www.onsemi.com 3** ~~—~~ 

**Share Feedback** Your Opinion Matters 

**FCPF7N60, FCP7N60** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**==> picture [491 x 602] intentionally omitted <==**

**----- Start of picture text -----**<br>
FER VGS a<br>Top: 15.0 V<br>10.0 V<br>10 [1] | 8.0 V 7.0 V Swe 10 [1] pee<br>| Le WH)<br>6.5 V<br>Bottom: 5.5 V6.0 V 150 ° C<br>25 ° C −55 ° C<br>10 [0]<br>P| AA 10 [0] P|Af<br>Notes: Notes:<br>1. 250 s Pulse Test 1. VDS = 40 V<br>10 [−1] ——fae Fe 2. TC = 25 ° C 10 [−1] LePL EE 2. 250 s Pulse Test W<br>10 [−1] 10 [0] 10 [1] 2 4 6 8 10<br>VDS, Drain−Source Voltage (V) VGS, Gate−Source Voltage (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>2.0 Es es<br>1.8<br>ee 1.6<br>1.4 a 10 [1] po}eer<br>1.2<br>1.00.8 +ASO VGS = 10 V 10 [0] AfeZ 150 ° C 25 ° C<br>VGS = 20 V<br>0.6<br>oe fa<br>0.4 Notes:<br>0.2 + ee ee ee ee oe ee 1. V GS = 0 V<br>Note: TJ = 25 ° C 2. 250 s Pulse Test<br>0.0 a 10 [−1] ae,Poff<br>0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>ID, Drain Current (A) VSD, Source−Drain Voltage (V)<br>Figure 3. On−Resistance Variation vs. Drain Current Figure 4. Body Diode Forward Voltage Variation<br>and Gate voltage vs. Source Current and Temperature<br>3000 12<br>CCissoss = C = Cgsds + C + Cgdgd (Cds = shorted) VDS = 100 V<br>Crss = Cgd 10 VDS = 250 V<br>VDS = 400 V<br>2000 8<br>Ciss<br>6<br>Notes:<br>1000 a Coss ae 1. V2. f = 1 MHzGS = 0 V 4 Pf; ft ff<br>2<br>w a ne Crss oS 2 Note: ID = 7 A<br>0 ISSTorn 0 A}t+<br>10 [−1] 10 [0] 10 [1] 0 5 10 15 20 25<br>VDS, Drain−Source Voltage (V) Qg, Total Gate Charge (nC)<br>, Drain Current (A) , Drain Current (A)<br>ID ID<br>DS(on),<br>R<br>, Reverse Drain Current (A)<br>IDR<br> Drain−Source On−Resistance (<br>Capacitance (pF)<br>, Gate−Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature** 

**Figure 6. Gate Charge Characteristics** 

**Figure 5. Capacitance Characteristics** 

**www.onsemi.com** 

**Share Feedback** Your Opinion Matters 

**4** 

**FCPF7N60, FCP7N60** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**==> picture [492 x 599] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 3.0<br>2.5<br>1.1<br>2.0<br>a Pf dt |<br>1.0 — 1.5 aa ae<br>> Z| ><br>1.0<br>0.9<br>Pept) Notes: 0.5 FRE Notes:<br>1. VGS = 0 V 1. VGS = 10 V<br>2. ID = 250 A 2. ID = 3.5 A<br>0.8 || |} dt. 0.0 Ffoe,<br>−100 −50 0 50 100 150 200 −100 −50 0 50 100 150 200<br>TJ, Junction Temperature C) ° TJ, Junction Temperature C) °<br>Figure 7. Breakdown Voltage Variation  Figure 8. On−Resistance Variation<br>vs. Temperature vs. Temperature<br>10 [2] Operation in This Area  10 [2] Operation in This Area<br>is Limited by RDS(on) is Limited by RDS(on)<br>100 s 100 s<br>10 [1] ee ee A ee 1 ms eel 10 [1] ee 1 ms<br>10 ms 10 ms<br>DC 100 ms<br>10 [0] PaEllHE She eH 10 [0] aSSe DC Neeannie<br>10 [−1] Notes: 10 [−1] Notes:<br>1. TC = 25 ° C 1. TC = 25 ° C<br>2. TJ = 150 ° C 2. TJ = 150 ° C<br>3. Single Pulse 3. Single Pulse<br>10 [−2] es 10 [−2] eh<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]<br>VDS, Drain−Source Voltage (V) VDS, Drain−Source Voltage (V)<br>Figure 9. Maximum Safe Operating Area  Figure 10. Maximum Safe Operating Area<br>for FCP7N60 for FCPF7N60<br>10.0<br>7.5<br>5.0<br>2.5 |} NL<br>0.0 PEE EIN<br>25 50 75 100 125 150<br>TC, Case Temperature ( C)<br>, (Normalized)<br>, (Normalized)<br>DS(on)<br>DSS R<br>BV<br>Drain−Source On−Resistance<br>Drain−Source Breakdown Voltage<br>, Drain Current (A) , Drain Current (A)<br>ID ID<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Drain Current vs. Case Temperature** 

+ 

**www.onsemi.com** 

**Share Feedback** Your Opinion Matters 

**5** 

**FCPF7N60, FCP7N60** 

**TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

**==> picture [442 x 369] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [0] | ee<br>D = 0.5 =———— a ee ee ee ee|ee ee |<br>Preeeyrrr :|<br>po 0.2 wfor PDM |||<br>0.1<br>10 [−1] 0.05 |SeCea[ TTTNe TTeee A ae eee — t 1 t2 | [||<br>ESL 0.02 |eeperteS tteaTTSSaTT 0 ee ee Notes: [I[][|<br>ae 0.01 Leecet 1. Z 0 JC(t) = 1.5 ° C/W Max. [|I<br>2. Duty Factor, D = t 1 /t 2<br>Poe ITE TE TE PT |<br>Single Pulse 3. TJM − TC = PDM x Z JC(t)<br>© 10 [−2] cae errr | | 0<br>pTrspeeTT<br>a eeee eee<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>t1, Square Wave Pulse Duration (s)<br>Figure 12. Transient Thermal Response Curve for FCP7N60<br>a a a a a Oe OO OO<br>pS a<br>D = 0.5<br>10 [0] FM er eT<br>0.2 ——— eea). PDM ||<br>=a [SS] 0 ee |[I<br>ee 0.1 EE [|<br>0.05 EESe eeseea ee eeee ee eee ee t 1 || ll<br>10 [−1] L 0.02 eeSeen eee east earn t 2 |4<br>Raa 0.01 Seeoa eeceSeoe ree eeeeeee etee ee ee Notes:1. Z 8 JC(t) = 4 ° C/W Max. [IATy|<br>eee eee 2. Duty Factor, D = t1 /t2 [|<br>a ee ee ll<br>> 10 [−2] iit Single Pulse Ti TT 3. T JM  − T C  = P DM  x Z 8 JC (t)<br>—————————————— EO ——Se<br>a——————eeeees ee ee eeee ee<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>t1, Square Wave Pulse Duration (s)<br>C/W)<br>°<br>(t), Thermal Response (<br>JC<br>Z<br>C/W)<br>°<br>(t), Thermal Response (<br>JC<br>Z<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Response Curve for FCPF7N60** 

**www.onsemi.com** 

**Share Feedback** Your Opinion Matters 

**6** 

**FCPF7N60, FCP7N60** 

**==> picture [427 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS<br>Same Type<br>50 k as DUT Qg<br>12 V 200 nF 300 nF 10V<br>VGS VDS Qgs Qgd<br>DUT<br>IG = const.<br>mL<br>Charge<br>Figure 14. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10 GS V DUT VGS<br>td(on) t r td(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


**Figure 15. Resistive Switching Test Circuit & Waveforms** 

**==> picture [431 x 126] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS L EAS  = 12 LI AS2 BVBVDSSDSS−VDD<br>I D BVDSSIAS<br>RG VDD ID (t)<br>VV 10V GS DUT VDD VDS (t)<br>tp<br>tp Time<br>**----- End of picture text -----**<br>


**Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms** 

**www.onsemi.com** 

**Share Feedback** Your Opinion Matters 

**7** 

**FCPF7N60, FCP7N60** 

**==> picture [333 x 499] intentionally omitted <==**

**----- Start of picture text -----**<br>
DUT +<br>VDS<br>_<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS dv/dt controlled by RG<br>I ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = Gate Pulse Period 10 V<br>(Driver)<br>——<br>IFM, Body Diode Forward Current<br>ISD<br>(DUT) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>(DUT) Body Diode Recovery dv/dt<br>VSD VDD<br>TT<br>**----- End of picture text -----**<br>


Body Diode Forward Voltage Drop 

**Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. 

**www.onsemi.com** 

**Share Feedback** Your Opinion Matters 

**8** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [488 x 63] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−220 Fullpack, 3−Lead / TO−220F−3SG<br>CASE 221AT<br>ISSUE B<br>DATE 19 JAN 2021<br>Scale 1:1<br>**----- End of picture text -----**<br>


**==> picture [87 x 135] intentionally omitted <==**

**==> picture [286 x 53] intentionally omitted <==**

**==> picture [493 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON67439E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 FULLPACK, 3−LEAD / TO−220F−3SG PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2012 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [81 x 54] intentionally omitted <==**

## **TO−220−3LD** CASE 340AT ISSUE B 

DATE 08 AUG 2022 

**==> picture [75 x 69] intentionally omitted <==**

## **GENERIC** 

## **MARKING DIAGRAM*** 

XXXXX XXXXX AYWWZZ 

XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

**DOCUMENT NUMBER: 98AON13818G DESCRIPTION: TO−220−3LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

 Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

**==> picture [232 x 43] intentionally omitted <==**

