FCPF22N60NT

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## **FCP22N60N / FCPF22N60NT N-Channel SupreMOS[®] MOSFET 600 V, 22 A, 165 m** Ω 

## **Features** 

- BVDSS > 650 V @ TJ = 150[o] C 

- RDS(on) = 140 m Ω (Typ.) @ VGS = 10 V, ID = 11 A 

- Ultra Low Gate Charge (Typ. Qg = 45 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

## **Application** 

## **Description** 

The SupreMOS[®] MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. 

- LCD/LED/PDP TV 

- Lighting 

- Solar Inverter 

- AC-DC Power Supply 

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D<br>G<br>GDS<br>TO-220 GDS TO-220F<br>S<br>Absolute Maximum Ratings TC = 25 [o] C unless otherwise noted.<br>Symbol Parameter FCP22N60N FCPF22N60NT Unit<br>ee<br>VDSS Drain to Source Voltage 600 V<br>e s<br>VGSS Gate to Source Voltage n ±45 V<br>ID Drain Current ee - Continuous - Continuous ((TTCC = 25 = 100 [o] C [o] C) ) 13.822 13.8*22* A<br>IDM Drain Current - Pulsed                                         (Note 1) 66 66* A<br>a ee<br>EAS Single Pulsed Avalanche Energy (Note 2) 672 mJ<br>| JQs|<br>a IAR Avalanche Current                                                                              (Note 1) 7.3 A<br>EAR Repetitive Avalanche Energy (Note 1) 2.75 mJ<br>es iQ |<br>dv/dt ea MOSFET dv/dt 100 V/ns<br>| Peak Diode Recovery dv/dt                                                                (Note 3) 20<br>PD Power Dissipation - Derate Above 25(TC = 25 [o] C) [o] C 1.64205 0.3139 W/W [o] C<br>|Naa<br>_| TJ, TSTG er Operating and Storage Temperature Range §€=| -55 to +150 (fkFF oC<br>A TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC<br>*Drain current limited by maximum junction temperature.<br>Thermal Characteristics<br>Symbol Parameter FCP22N60N FCPF22N60NT Unit<br>R θ JC Thermal Resistance, Junction to Case, Max.            0.61 3.2 oC/W<br>R θ JA Thermal Resistance, Junction to Ambient, Max.         62.5 62.5<br>**----- End of picture text -----**<br>


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©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

**1** 

**Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity** FCP22N60N FCP22N60N TO-220 Tube N/A N/A 50 units FCPF22N60NT FCPF22N60NT TO-220F Tube N/A N/A 50 units ~~——————————~~ **Electrical Characteristics** TC = 25[o] C unless otherwise noted. **Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics** BVDSS Drain to Source Breakdown Voltage IIDD = 1 mA, V = 1 mA, VGSGS = 0 V, T = 0 V, TJJ = 25 = 150[o] C[o] C 650600 -- -- V Δ / BV Δ TDSSJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25[o] C - 0.68 - V/[o] C IDSS Zero Gate Voltage Drain Current VVDSDS = 480 V, V = 480 V, TJ GS = 125= 0 V[o] C -- -- 10010 μ A ~~ane~~ IGSS Gate to Body Leakage Current VGS = ±45 V, VDS = 0 V - - ±100 nA **On Characteristics** VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μ A 2.0 3.0 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 11 A - 0.140 0.165 Ω ~~————~~ gFS Forward Transconductance VDS = 20 V, ID = 11 A - 22 - S **Dynamic Characteristics** Ciss Input Capacitance - 1950 - pF Coss Output Capacitance f = 1 MHzVDS = 100 V, VGS = 0 V, - 75.9 - pF Crss Reverse Transfer Capacitance - 3 - pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 43.2 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 196.4 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 11 A, - 45 - nC Qgs Gate to Source Gate Charge VGS = 10 V - 8.7 - nC Qgd Gate to Drain “Miller” Charge (Note 4) - 14.5 - nC ~~**=**~~ ESR Equivalent Series Resistance ~~===~~ (G-S) f = 1 MHz ~~aS~~ - ~~==e~~ 1 - Ω **Switching Characteristics** td(on) Turn-On Delay Time - 16.9 - ns tr Turn-On Rise Time VDD = 380 V, ID = 11 A - 16.7 - ns td(off) Turn-Off Delay Time VGS = 10 V, RG = 4.7 Ω - 49 - ns ~~=————~~ tf Turn-Off Fall Time (Note 4) - 4 - ns **Drain-Source Diode Characteristics** IS Maximum Continuous Drain to Source Diode Forward Current - - 22 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 66 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 11 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 11 A - 350 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/ μ s - 6 - μ C **Notes:** ~~SSS~~ 1. Repetitive rating: pulse width-limited by maximum junction temperature. ~~eeEe—=e~~ 2. IAS = 7.3 A, RG = 25 Ω , starting TJ = 25 ° C. 3. ISD ≤ 22 A, di/dt ≤ 200 A/ μ s, VDD ≤ 380 V, starting TJ = 25 ° C. 4. Essentially independent of operating temperature typical characteristics. **2** www.fairchildsemi.com 

©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

## **Typical Performance Characteristics** 

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Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>100 100<br>*Notes:<br>   1. 250 μ s Pulse Test<br>   2. TC = 25 [o] C<br>10 VGS = 15.0 V       150 o C<br>           10.0 V -55oC<br>             8.0 V<br>             7.0 V 10<br>             6.0 V o<br>25 C<br>             5.0 V<br>1 at              4.0 V be<br>*Notes:<br>   1. VDS = 20V<br>   2. 250 μ s Pulse Test<br>0.1 1<br>0.3 1 10 2 3 4 5 6 7 8<br>VDS,Drain-Source Voltage[V] VGS,Gate-Source Voltage[V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>0.4 100<br>0.3<br> 150 [o] C<br>Tt 10 «ft 25 [o] C<br>VGS = 10V<br>0.2 tre «Lad<br>V GS  = 20V *Notes:<br>1. VGS = 0V<br>0.1 seer] *Note: TC = 25 [o] C 1 | 2. 250 μ s Pulse Test<br>0 10 20 30 40 50 60 0.0 0.5 1.0 1.5<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>1E5 10<br>Ciss = Cgs + Cgd ( Cds = shorted )<br>10000 Coss C C oss rss = C  = C g ds d  + Cgd 8 V V VDS DSDS  = 120V  = 300V  = 480V<br>Ciss<br>1000 6<br>Crss<br>100 4<br>10 PRR *Note: 2<br>   1. VGS = 0V<br>   2. f = 1MHz *Note: ID = 11A<br>1 pee hk 0 An<br>0.1 1 10 100 600 0 10 20 30 40 50<br>VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]<br>,Drain Current[A]ID ,Drain Current[A]ID<br>] ,<br>Ω<br>[<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>Drain-Source On-Resistance IS<br>, Gate-Source Voltage [V]<br>Capacitances [pF]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Body Diode Forward Voltage Variation vs. Source Current** 

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©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

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## **Typical Performance Characteristics** (Continued) 

**Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation** 

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                        vs. Temperature                                                            vs. Temperature<br>1.2 3.0<br>2.5<br>1.1 SI GSEEEREYEE<br>2.0<br>1.0 1.5<br>Choe | EERE<br>1.0<br>0.9<br>Hann *Notes: 0.5 eee * Notes:<br>   1. VGS = 0V    1. VGS = 10V<br>   2. ID = 1mA    2. ID = 11A<br>0.8 Hott) 0.0 ERE<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature  [ [o] C ] TJ, Junction Temperature  [ [o] C ]<br>        Figure 9. Maximum Safe Operating Area                    Figure 10. Maximum Safe Operating Area<br>                        for FCP22N60N                                                                for FCPF22N60NT<br>100 100<br>10 μ s<br>10 μ s<br>100 μ s 100 μ s<br>10 10 Sy<br>1ms<br>1ms<br>10ms<br>Operation in This Area  10ms<br>1 is Limited by R DS(on) DC 1 Operation in This Area<br>is Limited by R DS(on)<br>100ms<br>0.1 *Notes: 0.1 *Notes:<br>   1. TC = 25 [o] C    1. TC = 25 [o] C<br>   2. T J  = 150 [o] C    2. T J  = 150 [o] C<br>0.01 Ei.    3. Single Pulse 0.01    3. Single Pulse te<br>1 10 100 1000 1 10 100 1000<br>VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]<br>Figure 11. Maximum Drain Current vs.Case Temperature<br>25<br>20<br>CEE<br>15<br>PN<br>10 PENT<br>5<br>pp PN<br>0<br>25 Pp 50 75 tT 100 125 150<br>TC, Case Temperature  [ [o] C ]<br>, [Normalized] , [Normalized]<br>DSS DS(on)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]ID , Drain Current [A]ID<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area                    Figure 10. Maximum Safe Operating Area for FCP22N60N                                                                for FCPF22N60NT** 

**Figure 11. Maximum Drain Current vs.Case Temperature** 

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©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

**4** 

## **Typical Performance Characteristics** (Continued) 

**Figure 12. Transient Thermal Response Curve for FCP22N60N** 

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1<br>0.5<br>0.2<br>0.1 PDM<br>0.1 t1<br>0.05 t2<br>*Notes:<br>0.02 0.01    1. Z θ JC(t) = 0.61 [o] C/W Max.<br>   2. Duty Factor, D= t 1 /t 2<br>Single pulse<br>   3. TJM - TC = PDM * Z θ JC(t)<br>0.01<br>10-5 10-4 10-3 10-2 10-1 1 10<br>  tRectangular Pulse Duration [sec]1, Rectangular Pulse Duration [sec]<br>C/W]  ]<br>o ZJC θ<br>[<br>(t), Thermal Response [<br>ZJC θ Thermal Response<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Response Curve for FCPF22N60NT** 

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5<br>1 0.5<br>Sore setae mat<br>0.2<br>0.1 0.1 PDM<br>0.05<br>t1<br>0.02 t2<br>0.01 0.01 *Notes:<br>   1. Z θ JC(t) = 3.2  [o] C/W Max.<br>Single pulse    2. Duty Factor, D= t1/t2<br>   3. T JM  - T C  = P DM  * Z θ JC (t)<br>0.001 oe<br>10-5 10-4 10-3 10-2 10-1 100 101 102<br>  t1Rectangular Pulse Duration [sec], Rectangular Pulse Duration [sec]<br>o ] C/W] ZJC θ<br>[<br>(t), Thermal Response [<br>ZThermal Response JC θ<br>**----- End of picture text -----**<br>


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©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

**5** 

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IG = const.<br>F<br>Charge<br> Figure 14. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>=n wa t on 4S t off<br> Figure 15. Resistive Switching Test Circuit & Waveforms<br>Vos oy5 EASa“a Las?LIAS<br>lo oy} BVpss<br>of las<br>>in (ad) =F Von Ip (t)<br>VGS TL DUT Vop<br>**----- End of picture text -----**<br>


**Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms** 

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©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

**6** 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ff}<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>eerie<br>Body Diode<br>Forward Voltage Drop<br> Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms<br>**----- End of picture text -----**<br>


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©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

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## **Mechanical Dimensions** 

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3<br>**----- End of picture text -----**<br>


## **Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB** 

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©2009 Fairchild Semiconductor Corporation FCP22N60N / FCPF22N60NT Rev. C1 

**8** 

## **Mechanical Dimensions** 

## **Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead** 

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Rev. I66 

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