FCPF190N65S3R0L.

## FCPF190N65S3R0L Power MOSFET, N-Channel, SUPERFET III, Easy Drive, —— 650 V, 17 A, 190 m 

## **Description** 

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. 

## **Features** 

- 700 V @ TJ = 150° C 

- Typ. RDS(on) = 159 m 

- Ultra Low Gate Charge (Typ. Qg = 33 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF) 

- 100% Avalanche Tested 

- This Device is Pb−Free and is RoHS Compliant 

## **Applications** 

- Computing / Display Power Supplies 

- Telecom / Server Power Supplies 

- Industrial Power Supplies 

## **www.onsemi.com** 

**==> picture [155 x 209] intentionally omitted <==**

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VDSS RDS(on) MAX ID MAX<br>650 V 190 m Ω  @ 10 V 17 A<br>D<br>G<br>g<br>S<br>SD<br>GDS<br>**----- End of picture text -----**<br>


**TO−220 CASE 340BF** 

- Lighting / Charger / Adapter 

**MARKING DIAGRAM** 

$Y&Z&3&K FCPF190 N65S3R0 

$Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCPF190N65S3R0 = Specific Device Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FCPF190N65S3R0L/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **May, 2018 − Rev. 3** 

**FCPF190N65S3R0L** 

## **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C unless otherwise noted)|**AXIMUM RATINGS**(TC= 25°C unless otherwise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**FCPF190N65S3R0L**|**Unit**|
|VDSS|Drain to Source Voltage||650|V|
|VGSS|Gate to Source Voltage|DC|±30|V|
|||AC (f�1 Hz)|±30|V|
|ID|Drain Current|Continuous (TC= 25°C)|17*|A|
|||Continuous (TC= 100°C)|11*||
|IDM|Drain Current|Pulsed (Note 1)|42.5*|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||76|mJ|
|IAS|Avalanche Current (Note 2)||2.5|A|
|EAR|Repetitive Avalanche Energy (Note 1)||1.44|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||20||
|PD|Power Dissipation|TC= 25°C|144|W|
|||Derate Above 25°C|1.15|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds||300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

*Drain current limited by maximum junction temperature . 

1. Repetitive rating: pulse−width limited by maximum junction temperature. 

2. IAS = 2.5 A, RG = 25 � , starting TJ = 25 ° C. 

3. ISD ≤ 8.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25 ° C. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**FCPF190N65S3R0L**|**Unit**|
|---|---|---|---|
|RθJC|Thermal Resistance, Junction to Case, Max.|3.76|�C/W|
|RθJA|Thermal Resistance, Junction to Ambient, Max.|62.5||



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FCPF190N65S3R0L|FCPF190N65S3R0|TO−220F|Tube|N/A|N/A|50 Units|



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**2** 

**FCPF190N65S3R0L** 

## **ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS OF THE IGBT**(TC=|25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25°C|650|−|−|V|
|||VGS= 0 V, ID= 1 mA, TJ= 150°C|700|−|−|V|
|�BVDSS/�TJ|Breakdown Voltage Temperature Coefficient|ID= 1 mA, Referenced to 25oC|−|0.6|−|V/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VGS= 0 V|−|−|1|�A|
|||VDS= 520 V, TC= 125oC|−|0.89|−||
|IGSS|Gate to Body Leakage Current|VGS=±30 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 1.7 mA|2.5|−|4.5|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 8.5 A|−|159|190|m�|
|gFS|Forward Transconductance|VDS= 20 V, ID= 8.5 A|−|10|−|S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V,<br>f = 1 MHz|−|1350|−|pF|
|Coss|Output Capacitance||−|30|−|pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|300|−|pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|43|−|pF|
|Qg(tot)|Total Gate Charge at 10V|VDS= 400 V, ID= 8.5 A,<br>VGS= 10 V<br>(Note 4)|−|33|−|nC|
|Qgs|Gate to Source Gate Charge||−|7.9|−|nC|
|Qgd|Gate to Drain “Miller” Charge||−|14|−|nC|
|ESR|Equivalent Series Resistance|f = 1 MHz|−|0.5|−|�|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn−On Delay Time|VDD= 400 V, ID= 8.5 A,<br>VGS= 10 V, Rg= 4.7Ω<br>(Note 4)|−|17|−|ns|
|tr|Turn−On Rise Time||−|16|−|ns|
|td(off)|Turn−Off Delay Time||−|42|−|ns|
|tf|Turn−Off Fall Time||−|6|−|ns|
|**SOURCE−DRAIN DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Source to Drain Diode Forward Current||−|−|17|A|
|ISM|Maximum Pulsed Source to Drain Diode Forward Current||−|−|42.5|A|
|VSD|Source to Drain Diode Forward Voltage|VGS= 0 V, ISD= 8.5 A|−|−|1.2|V|
|trr|Reverse Recovery Time|VGS= 0 V, ISD= 8.5 A,<br>dIF/dt = 100 A/ms|−|313|−|ns|
|Qrr|Reverse Recovery Charge||−|4.9|−|�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. 

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**3** 

**FCPF190N65S3R0L** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
50<br>V GS  = 10.0 V<br>8.0 V<br>7.0 V<br>10 6.5 V<br>6.0 V<br>5.5 V<br>1<br>Notes:<br>1. 250  � s Pulse Test<br>2. TC = 25 ° C<br>0.1<br>0.1 1 10<br> Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**==> picture [100 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS, Drain−Source Voltage [V]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
50<br>Notes:<br>1. V DS  = 20 V<br>2. 250  � s Pulse Test<br>10<br>150 ° C<br>25 ° C<br>−55 ° C<br>1<br>3 4 5 6 7 8 9<br>VGS, Gate−Source Voltage [V]<br> Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

**Figure 2. Transfer Characteristics** 

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**----- Start of picture text -----**<br>
0.4<br>Note: TC = 25 ° C<br>0.3<br>V GS  = 10 V<br>0.2<br>VGS = 20 V<br>0.1<br>0.0<br>0 10 20 30 40<br>ID, Drain Current [A]<br>Figure 3. On−Resistance Variation vs.<br>Drain Current and Gate Voltage<br>100000<br>10000<br>Ciss<br>1000<br>100 Coss<br>Notes:<br>10 1. VGS = 0 V<br>2. f = 1 MHz<br>1 ciss = cgs + cgd (cds = shorted) Crss<br>coss = cds + cgd<br>0.1 c rss  = c gd<br>0.1 1 10 100 1000<br>VDS, Drain−Source Voltage [V]<br>][ �<br>,<br>DS(ON)<br>R<br>Drain−Source On−Resistance<br>Capacitance [pF]<br>**----- End of picture text -----**<br>


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100<br>Notes:<br>1. VGS = 0 V<br>10 2. 250  � s Pulse Test<br>150 ° C<br>1<br>25 ° C<br>0.1<br>0.01 −55 ° C<br>0.001<br>0.0 0.5 1.0 1.5<br>VSD, Body Diode Forward Voltage [V]<br>Figure 4. Body Diode Forward Voltage<br>Variation vs. Source Current and<br>Temperature<br>10<br>Note: ID = 8.5 A<br>8<br>VDS = 130 V<br>VDS = 400 V<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35<br>Qg, Total Gate Charge [V]<br>Reverse Drain Current [A]<br>IS,<br>, Gate−Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance Characteristics** 

**Figure 6. Gate Charge Characteristics** 

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**4** 

**FCPF190N65S3R0L** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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**----- Start of picture text -----**<br>
1.2<br>Notes:<br>1. VDS = 0 V<br>2. ID = 10 mA<br>1.1<br>1.0<br>0.9<br>0.8<br>−50 0 50 100 150<br>TJ, Junction Temperature [ � C]<br>Figure 7. Breakdown Voltage Variation<br>vs. Temperature<br>100<br>30  � s<br>10 100  � s<br>1 ms<br>10 ms<br>1 DC<br>Operation in This Area<br>is Limited by RDS(on)<br>Notes:<br>0.1 1. TC = 25 ° C<br>2. TJ = 150 ° C<br>3. Single Pulse<br>0.01<br>1 10 100 1000<br>VDS, Drain−Source Voltage<br>Figure 9. Maximum Safe Operating Area<br>8<br>6<br>4<br>2<br>0<br>0 130 260 390 520 650<br>VDS, Drain to Source Voltage<br>, [Normalized]<br>DSS<br>BV<br>Drain−Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>J �<br>�<br> [<br>OSS<br>E<br>**----- End of picture text -----**<br>


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3.0<br>Notes:<br>1. VDS = 10 V<br>2.5 2. I D  = 8.5 A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>−50 0 50 100 150<br>TJ, Junction Temperature [ � C]<br>Figure 8. On−Resistance Variation vs.<br>Temperature<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature [ � C]<br>, [Normalized]<br>DS(ON)<br>R<br>Drain−Source On−Resistance<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 10. Maximum Drain Current vs. Case Temperature** 

**Figure 11. Eoss vs. Drain to Source Voltage** 

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**5** 

**FCPF190N65S3R0L** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D = 0.5<br>0.2<br>0.1<br>0.1 0.05 PDM<br>0.02<br>0.01<br>t 1<br>Notes: t2<br>0.01<br>Z � JC(t) = r(t) ×  R � JC<br>R � JC = 3.76 ° C/W<br>SINGLE PULSE Peak T J  = P DM ×  Z � JC (t) + T C<br>Duty Cycle, D = t 1  / t 2<br>0.001<br>10 −5 10 −4 10 −3 10 −2 10 −1 10 0 10 1 10 2<br>t, Rectangular Pulse Duration (sec)<br>Thermal Resistance<br>r(t), Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Figure 12. Transient Thermal Response Curve** 

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**6** 

**FCPF190N65S3R0L** 

**==> picture [365 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS<br>RL Qg<br>VGS VDS Qgs Qgd<br>DUT<br>IG = Const.<br>Charge<br>**----- End of picture text -----**<br>


**Figure 13. Gate Charge Test Circuit & Waveform** 

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VDS RL VDS 90% 90% 90%<br>VGS VDD<br>RG<br>10% 10%<br>DUT VGS<br>VGS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


**Figure 14. Resistive Switching Test Circuit & Waveforms** 

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**----- Start of picture text -----**<br>
L<br>VDS EAS  � [1] 2 � LIAS2<br>BVDSS<br>ID<br>IAS<br>RG VDD ID(t)<br>VGS DUT VDD VDS(t)<br>t<br>p Time<br>t<br>p<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

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**7** 

**FCPF190N65S3R0L** 

**==> picture [329 x 533] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>DUT<br>VSD<br>−<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT<br>VDD<br>VGS<br>− dv/dt controlled by RG<br>− ISD controlled by pulse period<br>Gate Pulse Width<br>D  �<br>Gate Pulse Period<br>VGS 10 V<br>(Driver)<br>IFM, Body Diode Forward Current<br>ISD di/dt<br>(DUT)<br>IRM<br>Body Diode Reverse Current<br>Body Diode Recovery dv/dt<br>(DUT)VDS VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**8** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−220 FULLPAK 3LD** 

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CASE 340BF<br>ISSUE O<br>DATE 31 AUG 2016<br>**----- End of picture text -----**<br>


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10.30<br>A<br>9.80 2.90<br>3.40 2.50<br>3.00<br>6.60<br>6.20<br>3.00<br>2.60<br>19.00 1 X  45°<br>B<br>17.70 B [15.70]<br>15.00<br>3.30<br>B<br>2.7 0<br>3<br>1<br>2.70<br>2.14<br>1.20 2.30<br>0.90 [ (2X)]<br>10.70<br>10.30<br>B [0.60]<br>0.90<br>0.40<br>1.20 0. 5 0 [ (3X)]<br>1.00 0.50 M A<br>2.74 NOTES:<br>2.34 [ (2X)]   A. EXCEPT WHERE NOTED CONFORMS TO<br>EIAJ SC91A.<br>B DOES NOT COMPLY EIAJ STD. VALUE.<br>  C. ALL DIMENSIONS ARE IN MILLIMETERS.<br>  D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br> MOLD FLASH AND TIE BAR PROTRUSIONS.<br>4.60<br>  E. DIMENSION AND TOLERANCE AS PER ASME<br>4.30 Y14.5−2009.<br>**----- End of picture text -----**<br>


A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. 

B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. 

**DOCUMENT NUMBER: 98AON13839G** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed **STATUS: ON SEMICONDUCTOR STANDARD** versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ~~**NEW STANDARD:**~~ © Semiconductor Components Industries, LLC, 2002 **http://onsemi.com** Case Outline Number: **October, 2002 − Rev. 0DESCRIPTION: TO−220 FULLPAK 3LD 1 PAGE 1 OF 2XXX** 

|**DOCUMENT7NUMBER:**<br>**98AON13839G**<br>**PAGE 2 OF 2**<br>~~eT ©~~<br>~~——~~|**DOCUMENT7NUMBER:**<br>**98AON13839G**<br>**PAGE 2 OF 2**<br>~~eT ©~~<br>~~——~~|
|---|---|
|**ISSUE**|**REVISION**<br>**DATE**|
|O|RELEASED FOR PRODUCTION FROM FAIRCHILD TO220V03 TO ON SEMICON-<br>31 AUG 2016|
||DUCTOR. REQ. BY B. NG.|



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Case Outline Number: 

© Semiconductor Components Industries, LLC, 2016 **August, 2016 − Rev. O** 

**340BF** 

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