FCPF190N60E

## **Is Now Part of** 

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## **December 2014** 

## **FCP190N60E / FCPF190N60E N-Channel SuperFET[® ] II Easy-Drive MOSFET** 

## **600 V, 20.6 A, 190 m** Ω 

## **Features** 

- 650 V @ TJ = 150°C 

- Typ. RDS(on) = 160 mΩ 

- Ultra Low Gate Charge (Typ. Qg = 63 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF) 

- 100% Avalanche Tested 

- An Integrated Gate Resistor 

- RoHS Compliant 

## **Applications** 

- LCD / LED / PDP TV Lighting 

- Solar Inverter 

## **Description** 

SuperFET[®] II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series. 

- AC-DC Power Supply 

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**MOSFET Maximum Ratings** TC = 25[o] C unless otherwise noted. **Symbol Parameter FCP190N60E FCPF190N60E Unit** ~~a I~~ VDSS Drain to Source Voltage 600 V - DC ±20 V ~~i~~ VGSS Gate to Source Voltage ~~es~~ - AC                                             (f > 1 Hz) ±30 V ID Drain Current ~~a~~ - Continuous (TC = 25[o] C) 20.6 20.6* A - Continuous (TC = 100[o] C) 13.1 13.1* ~~a~~ IDM ~~DO~~ Drain Current - Pulsed                                         (Note 1) 61.8 61.8* A EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ ~~TT. iy | | a~~ IAR Avalanche Current                                                                            (Note 1) 4.0 A ~~a~~ EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ dv/dt ~~|ne~~ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt                                                               (Note 3 ~~|~~ ) ~~#£,<@Gmmmt~~ 20 ~~_ FF~~ PD Power Dissipation - Derate Above 25(TC = 25[o] C)[o] C 1.67208 0.3139 W/W[o] C ~~a es ee~~ TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC ~~a~~ TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC *Drain current limited by maximum junction temperature. **Thermal Characteristics Symbol Parameter FCP190N60E FCPF190N60E Unit** RθJC Thermal Resistance, Junction to Case, Max. 0.6 3.2 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 

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©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 

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**Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity** FCP190N60E FCP190N60E TO-220 Tube N/A N/A 50 units FCPF190N60E FCPF190N60E TO-220F Tube N/A N/A 50 units **Electrical Characteristics** TC = 25[o] C unless otherwise noted. ~~So~~ **Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics** BVDSS Drain to Source Breakdown Voltage VVGSGS = 0 V, I = 0 V, IDD = 10 mA, T = 10 mA, TJJ = 25 = 150°C°C 600650 -- -- V Δ / BVΔTDSSJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25[o] C - 0.67 - V/[o] C Drain to Source Avalanche Breakdown BVDS Voltage VGS = 0 V, ID = 20 A - 700 - V IDSS Zero Gate Voltage Drain Current VVDSDS = 600 V, V = 480 V, TC GS = 125= 0 V[o] C -- 2.81μA IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA **On Characteristics** ~~SS~~ VGS(th) Gate Threshold Voltage ~~Se~~ VGS = VDS, ID = 250 μA 2.5 - 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.16 0.19 Ω ~~————————~~ gFS Forward Transconductance VDS = 20 V, ID = 10 A - 20 - S **Dynamic Characteristics** Ciss Input Capacitance - 2385 3175 pF Coss Output Capacitance Vf = 1 MHzDS = 25 V, VGS = 0 V, - 1795 2396 pF Crss Reverse Transfer Capacitance - 110 165 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 42 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 178 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 10 A, - 63 82 nC Qgs Gate to Source Gate Charge VGS = 10 V - 10 - nC Qgd Gate to Drain “Miller” Charge (Note 4) - 24 - nC ~~aa==~~ ESR Equivalent Series Resistance f = 1 MHz - 5 - Ω **Switching Characteristics** td(on) Turn-On Delay Time - 23 56 ns tr Turn-On Rise Time VDD = 380 V, ID = 10 A, - 14 38 ns td(off) Turn-Off Delay Time VGS = 10 V, RG = 4.7 Ω - 101 212 ns tf Turn-Off Fall Time (Note 4) - 15 40 ns **Drain-Source Diode Characteristics** ~~=——— ===SEE~~ IS Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 10 A, - 308 - ns ~~SEE~~ Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 4.8 - μC **Notes:** 1. Repetitive rating : pulse-width limited by maximum junction temperature. 

2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 

3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 

4. Essentially independent of operating temperature typical characteristics. 

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©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 

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## **Typical Performance Characteristics** 

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Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>50 100<br>V GS = 15.0V       *Notes:<br>           10.0V    1. V DS  = 20V<br>             8.0V    2. 250 μ s Pulse Test<br>             7.0V<br>10              6.0V<br>             5.5V o<br>150 C<br>             5.0V<br>             4.5V<br>TTA 10 LF 25oC<br>-55oC<br>1<br>*Notes:<br>   1. 250 μ s Pulse Test<br>   2. TC = 25 [o] C<br>0.3 Ar 1 HT<br>0.1 1 10 2 3 4 5 6 7 8<br>VDS, Drain to Source Voltage[V] VGS, Gate to Source Voltage[V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>0.4 100<br>0.3<br> 150 [o] C<br>25 [o] C<br>TT] 10 «ir<br>VGS = 10V<br>0.2<br>VGS = 20V<br>*Notes:<br>1. VGS = 0V<br>0.1 pet *Note: TC = 25 [o] C 1 hie 2. 250 μ s Pulse Test<br>0 10 20 30 40 50 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>nina ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] fl<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>10000 10<br>Ciss<br>VDS = 120V<br>1000 Se 8 VDS = 300V<br>VDS = 480V<br>6<br>100 Coss<br>* Note: 4<br>10 is    2. f = 1MHz    1. VGS = 0V Crss aay 4<br>2<br>Ciss = Cgs + Cgd (Cds = shorted)<br>1 ob C Coss rss  = C = Cgd ds + Cgd *Note: ID = 10A<br>0.5 PE 0<br>0.1 1 10 100 600 0 15 30 45 60 75<br>VDS, Drain to Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current [A]ID , Drain Current [A]ID<br>],<br>Ω<br> [<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>IS<br>Drain to Source On-Resistance<br>Capacitances [pF]<br>, Gate to Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


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©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 

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Typical Performance Characteristics  (Continued)<br>       Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                            vs. Temperature<br>1.20 3.0<br>1.15 Pf<br>2.5<br>1.10<br>SEA} 2.0 ER<br>1.05<br>tifa 1.5 EeEeGEEy aun<br>1.00<br>1.0<br>0.95 SAS EEEer anaes<br>Gale afeeeee *Notes: 0.5 oe *Notes:<br>0.90    1. V GS  = 0V    1. VGS = 10V<br>   2. I D  = 10mA    2. ID = 10A<br>0.85 toeSo 0.0 ESGeaeae_<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [ [o] C] TJ, Junction Temperature [ [o] C]<br>        Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Safe Operating Area<br>                        for FCP190N60E                                                              for FCPF190N60E<br>100 100<br>10 μ s<br>10 μ s<br>100 μ s<br>10 1ms 10 100 μ s<br>10ms 1ms<br>DC 10ms<br>1 1 DC<br>Operation in This Area  Operation in This Area<br>is Limited by R DS(on) is Limited by R DS(on)<br>0.1 *Notes: 0.1 *Notes:<br>   1. TC = 25 [o] C    1. TC = 25 [o] C<br>   2. T J  = 150 [o] C    2. T J  = 150 [o] C<br>   3. Single Pulse    3. Single Pulse<br>0.01 0.01<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain to Source Voltage [V] VDS, Drain to Source Voltage [V]<br>        Figure 11. Maximum Drain Current                         Figure 12. Eoss vs. Drain to Source Voltage<br>                          vs. Case Temperature<br>25 10<br>20 8<br>tp HEY<br>15 6<br>finoeeeene TEAL<br>10 4<br>Pf A PT<br>5 faneaeeeNe 2 Ae<br>0 Ff EY 0 (Ata Geeeeee<br>25 50 75 100 125 150<br>0 100 200 300 400 500 600<br>TC, Case Temperature [ [o] C] V Drain to Source Voltage [V]<br>, [Normalized] , [Normalized]<br>BVDSS RDS(on)<br>Drain to Source On-Resistance<br>Drain to Source Breakdown Voltage<br>FCP190N60E / FCPF190N60E — N-Channel SuperFET<br>®<br>, Drain Current [A] , Drain Current [A]<br>ID ID<br>II Easy-Drive MOSFET<br>J]<br>μ<br>, [<br>OSS<br>E<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Typical Performance Characteristics** (Continued) 

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©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 

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## **Typical Performance Characteristics** (Continued) 

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Figure 13. Transient Thermal Response Curve for FCP190N60E<br>1<br>0.5<br>0.2<br>0.1 PDM<br>0.1<br>t1<br>0.05 t2<br>*Notes:<br>0.02 0.01    1. Z θ JC(t) = 0.6 [o] C/W Max.<br>   2. Duty Factor, D= t 1 /t 2<br>Single pulse<br>   3. TJM - TC = PDM * Z θ JC(t)<br>0.01 a<br>10-5 10-4 10-3 10-2 10-1 1<br>  tRectangular Pulse Duration [sec]1, Rectangular Pulse Duration [sec]<br>Figure 14. Transient Thermal Response Curve for FCPF190N60E<br>5<br>0.5<br>1<br>0.2<br>St 0.1 Eo sar 22 a a<br>P DM<br>0.05<br>t1<br>0.1 0.02 t2<br>0.01 *Notes:<br>   1. Z θ JC (t) = 3.2 [o] C/W Max.<br>Single pulse    2. Duty Factor, D= t1/t2<br>   3. TJM - TC = PDM * Z θ JC(t)<br>0.01<br>10-5 10-4 10-3 10-2 10-1 1 10 100<br>  tRectangular Pulse Duration [sec]1, Rectangular Pulse Duration [sec]<br>oC/W] Z]JC θ<br>[<br>(t), Thermal Response [<br>ZJC θ Thermal Response<br>oC/W] Z]JC θ<br>[<br>(t), Thermal Response [<br>ZThermal Response JC θ<br>**----- End of picture text -----**<br>


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©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 

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IG = const.<br>F<br>Charge<br> Figure 15. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>=n wa t on 4S t off<br> Figure 16. Resistive Switching Test Circuit & Waveforms<br>Vos .A EASak“a Las?LIAS<br>— —<br>oh BVpss |<br>1D of las | — FS<br>: Rnr <r) FF Voo lo(t)<br>VGS TL DUT Vop<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms** 

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©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ff}<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>eerie<br>Body Diode<br>Forward Voltage Drop<br> Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms<br>**----- End of picture text -----**<br>


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©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C11 

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SUPPLIER "B" PACKAGE<br>SHAPE �����<br>   3.50<br>10.67<br>SUPPLIER "A" PACKAGE 9.65 E<br>SHAPE<br>3.40<br>2.50<br>16.30<br>IF PRESENT, SEE NOTE "D" 13.90<br>E<br>16.51 9.40<br>15.42<br>8.13 E<br>1 2 3<br>[2.46] C 2.704.10<br>14.04<br>2.13 12.70<br>2.06<br>FRONT VIEWS<br>4.70 1.62 1.62<br>4.00 1.42 [  H] 2.67 1.10<br>2.40<br>"A1" 8.65 1.00<br>SEE NOTE "F" 7.59 0.55<br>�� ��<br>OPTIONAL 6.69 �� ��<br>6.06<br>CHAMFER<br>E<br>14.30<br>11.50<br>NOTE "I" BOTTOM VIEW<br>NOTES:<br>   A)  REFERENCE JEDEC, TO-220, VARIATION AB<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>   C)  DIMENSIONS COMMON TO ALL PACKAGE<br>SUPPLIERS EXCEPT WHERE NOTED [   ].<br>3 2 1    D)  LOCATION OF MOLDED FEATURE MAY VARY<br>       (LOWER LEFT CORNER, LOWER CENTER<br>        AND CENTER OF THE PACKAGE)<br>   E  DOES NOT COMPLY JEDEC STANDARD VALUE.<br>   F) "A1" DIMENSIONS AS BELOW:<br>SINGLE GAUGE = 0.51 - 0.61<br>DUAL GAUGE     = 1.10 - 1.45<br>   G)  DRAWING FILE NAME: TO220B03REV9<br>   H   PRESENCE IS SUPPLIER DEPENDENT<br>    I)   SUPPLIER DEPENDENT MOLD LOCKING HOLES<br>          IN HEATSINK.<br>0.60<br>0.36 2.85 BACK VIEW<br>2.10<br>SIDE VIEW<br>**----- End of picture text -----**<br>


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10.36 2.66<br>A B B<br>9.96 2.42<br>3.28<br>3.40 7.00 3.08<br>0.70<br>3.20<br>SEE NOTE "F" SEE NOTE "F"<br>6.88<br>6.48<br>1 X 45°<br>16.07<br>B<br>15.67<br>16.00<br>15.60<br> (3.23)  B<br>3<br>1<br>1.47<br>2.96<br>2.14 1.24<br>2.56<br>0.90<br>10.05 0.70<br>9.45 0.50 [M] A<br>30°<br>0.45<br>0.60<br>0.25 B<br>0.45<br> 2.54   2.54<br>4.90<br>B<br>4.50<br>NOTES:<br>  A. EXCEPT WHERE NOTED CONFORMS TO<br>EIAJ SC91A.<br>B DOES NOT COMPLY EIAJ STD. VALUE.<br>  C. ALL DIMENSIONS ARE IN MILLIMETERS.<br>  D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br> MOLD FLASH AND TIE BAR PROTRUSIONS.<br>  E. DIMENSION AND TOLERANCE AS PER ASME<br>Y14.5-1994.<br>  F. OPTION 1 - WITH SUPPORT PIN HOLE.<br>      OPTION 2 - NO SUPPORT PIN HOLE.<br>  G. DRAWING FILE NAME: TO220M03REV5<br>**----- End of picture text -----**<br>


ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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