FCPF125N65S3

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **www.onsemi.com** 

## **FCPF125N65S3** 

**N-Channel SuperFET[® ] III MOSFET 650 V, 24 A, 125 m** Ω 

## **Features** 

- 700 V @ TJ = 150[o] C 

- Typ. RDS(on) = 105 mΩ 

- Ultra Low Gate Charge (Typ. Qg = 44 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 405 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

## **Description** 

SuperFET[®] III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for 

various power system for miniaturization and higher efficiency. 

## **Applications** 

- Computing / Display Power Supplies 

- Telecom / Server Power Supplies 

**==> picture [505 x 446] intentionally omitted <==**

**----- Start of picture text -----**<br>
• Industrial Power Supplies<br>D<br>GDS G<br>TO-220F<br>© 6<br>S<br>Absolute Maximum Ratings TC = 25 [o] C unless otherwise noted.<br>Symbol Parameter FCPF125N65S3 Unit<br>VDSS Drain to Source Voltage 650 V<br> - DC ±30 V<br>VGSS Gate to Source Voltage  - AC                                               (f > 1 Hz) ±30 V<br>ID Drain Current  - Continuous  - Continuous ((TTCC = 25 = 100 [o] C [o] C) ) 24*15* A<br>IDM Drain Current  - Pulsed                                        (Note 1) 60* A<br>EAS Single Pulsed Avalanche Energy (Note 2) 115 mJ<br>IAS Avalanche Current                                                                                         (Note 1) 3.7 A<br>EAR Repetitive Avalanche Energy (Note 1) 0.38 mJ<br>MOSFET dv/dt                                                                  100<br>dv/dt V/ns<br>————————————— Peak Diode Recovery dv/dt                                                                         (Note 3) 20<br>PD Power Dissipation  - Derate Above 25(TC = 25 [o] C) [o] C 0.3138 W/W [o] C<br>TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC<br>TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC<br>*Drain current limited by maximum junction temperature oan .<br>Thermal Characteristics<br>Symbol Parameter FCPF125N65S3 Unit<br>RθJC Thermal Resistance, Junction to Case, Max.             3.24 oC/W<br>——— RθJA Thermal Resistance, Junction to Ambient, Max.              62.5<br>  Semiconductor Components Industries, LLC, 2017                                                                                                                 Publication Order Number:<br>  April, 2017, Rev. 1.0                                                                                                                                                                       FCPF125N65S3/D<br>**----- End of picture text -----**<br>


**1** 

## **Package Marking and Ordering Information** 

|**Part Number**|**Part Number**|**Top Mark**|**Package**|**Package**|**Packing Method**|**Reel Size**|**Reel Size**|**Tape Width**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|FCPF125N65S3||FCPF125N65S3|TO-220F||Tube|N/A||N/A|||50 units||
|**Electrical Characteristics**TC= 25oC unless otherwise noted.|||||||||||||
|**Symbol**|**Parameter**|||**Test Conditions**|||**Min.**||**Typ.**|**Max.**||**Unit**|
|**Off Characteristics**|||||||||||||
|BVDSS|Drain to Source Breakdown Voltage|||VGS= 0 V, ID= 1 mA, TJ= 25°C|||650||-|-||V|
|||||VGS= 0 V, ID= 1 mA, TJ= 150°C|||700||-|-||V|
|ΔBVDSS<br>/ΔTJ|Breakdown Voltage Temperature<br>Coefficient|||ID= 1 mA, Referenced to 25oC|||-||0.65|-||V/oC|
|IDSS|Zero Gate Voltage Drain Current|||VDS= 650 V, VGS= 0 V|||-||-|1||μA|
|||||VDS= 520 V, TC= 125oC|||-||1.29|-|||
|IGSS|Gate to BodyLeakage Current|||VGS= ±30 V, VDS= 0 V|||-||-|±100||nA|
|**On Characteristics**|||||||||||||
|VGS(th)|Gate Threshold Voltage|||VGS= VDS, ID= 2.4 mA|||2.5||-|4.5||V|
|RDS(on)|Static Drain to Source On Resistance|||VGS= 10 V, ID= 12 A|||-||105|125||mΩ|
|gFS|Forward Transconductance|||VDS= 20 V, ID= 12 A|||-||16|-||S|
|**Dynamic Characteristics**|||||||||||||
|Ciss|Input Capacitance|||VDS= 400 V, VGS= 0 V,<br>f = 1 MHz|||-||1790|-||pF|
|Coss|Output Capacitance||||||-||40|-||pF|
|Coss(eff.)|Effective Output Capacitance|||VDS= 0 V to 400 V, VGS= 0 V|||-||405|-||pF|
|Coss(er.)|Energy Related Output Capacitance|||VDS= 0 V to 400 V, VGS= 0 V|||-||60|-||pF|
|Qg(tot)|Total Gate Charge at 10V|||VDS= 400 V, ID= 12 A,<br>VGS= 10 V<br>(Note 4)|||-||44|-||nC|
|Qgs|Gate to Source Gate Charge||||||-||12|-||nC|
|Qgd|Gate to Drain “Miller” Charge||||||-||19|-||nC|
|ESR|Equivalent Series Resistance|||f = 1 MHz|||-||4|-||Ω|
|**Switching Characteristics**|||||||||||||
|td(on)|Turn-On DelayTime|||VDD= 400 V, ID= 12 A,<br>VGS= 10 V, Rg= 4.7Ω<br>(Note 4)|||-||22|-||ns|
|tr|Turn-On Rise Time||||||-||25|-||ns|
|td(off)|Turn-Off DelayTime||||||-||60|-||ns|
|tf|Turn-Off Fall Time||||||-||15|-||ns|
|**Source-Drain Diode Characteristics**|||||||||||||
|IS|Maximum Continuous Source to Drain Diode Forward Current||||||-||-|24||A|
|ISM|Maximum Pulsed Source to Drain Diode Forward Current||||||-||-|60||A|
|VSD|Drain to Source Diode Forward Voltage|||VGS= 0 V, ISD= 12 A|||-||-|1.2||V|
|trr|Reverse RecoveryTime|||VGS= 0 V, ISD= 12 A,<br>dIF/dt = 100 A/μs|||-||362|-||ns|
|Qrr|Reverse RecoveryCharge||||||-||6.36|-||μC|



## **Notes:** 

1. Repetitive rating: pulse-width limited by maximum junction temperature. 

2. IAS = 3.7 A, RG = 25 Ω, starting TJ = 25°C. 

3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ 400 V, starting TJ = 25°C. 

4. Essentially independent of operating temperature typical characteristics. 

www.onsemi.com 

**2** 

## **Typical Performance Characteristics** 

**Figure 1. On-Region Characteristics** 

**Figure 2. Transfer Characteristics** 

**==> picture [455 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>VGS = 10.0V       *Notes:<br>             8.0V    1. VDS = 20V<br>             7.0V    2. 250 μ s Pulse Test<br>             6.5V<br>             6.0V<br>10<br>             5.5V<br>150oC<br>10<br>1 25 o C<br>*Notes:<br>   1. 250 μ s Pulse Test -55oC<br>   2. TC = 25 [o] C<br>0.1 1<br>0.1 1 10 20 3 6 9<br>VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]<br>, Drain Current[A]ID , Drain Current[A]ID<br>**----- End of picture text -----**<br>


**Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage** 

**==> picture [207 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.4<br>*Note: TC = 25 [o] C<br>0.3<br>0.2<br>VGS = 10V<br>VGS = 20V<br>0.1<br>0.0<br>0 10 20 30 40 50 60<br>ID, Drain Current [A]<br>Figure 5. Capacitance Characteristics<br>100000<br>10000<br>Ciss<br>1000<br>100 C oss<br>*Note:<br>10    1. VGS = 0V<br>   2. f = 1MHz<br>1 Ciss = Cgs + Cgd (Cds = shorted) C rss<br>Coss = Cds + Cgd<br>Crss = Cgd<br>0.1<br>0.1 1 10 100 1000<br>VDS, Drain-Source Voltage [V]<br>] Ω<br>DS(ON),<br>R<br>Drain-Source On-Resistance [<br>Capacitances [pF]<br>**----- End of picture text -----**<br>


**Figure 4. Body Diode Forward Voltage Variation vs. Source Current** 

**==> picture [205 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>*Notes:<br>1. VGS = 0V<br>10 2. 250 μ s Pulse Test<br>1  150 [o] C<br>25 [o] C<br>0.1<br>0.01 -55oC<br>0.001<br>0.0 0.5 1.0 1.5<br>VSD, Body Diode Forward Voltage [V]<br>, Reverse Drain Current [A]<br>IS<br>**----- End of picture text -----**<br>


**Figure 6. Gate Charge Characteristics** 

**==> picture [205 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>*Note: ID = 12A<br>VDS = 130V<br>8<br>VDS = 400V<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50<br>Qg, Total Gate Charge [nC]<br>, Gate-Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


www.onsemi.com 

**3** 

## **Typical Performance Characteristics** (Continued) 

**Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation vs. Temperature                                                            vs. Temperature** 

**==> picture [208 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>*Notes:<br>   1. VGS = 0V<br>   2. ID = 10mA<br>1.1<br>1.0<br>0.9<br>0.8<br>-50 0 50 100 150<br>TJ, Junction Temperature [ [o] C]<br>100<br>10 μ s<br>100 μ s<br>10<br>1ms<br>10ms<br>1<br>Operation in This Area  DC<br>is Limited by R  DS(on)<br>*Notes:<br>0.1<br>   1. TC = 25 [o] C<br>   2. T J  = 150 [o] C<br>   3. Single Pulse<br>0.01<br>1 10 100 1000<br>VDS, Drain-Source Voltage [V]<br>, [Normalized]<br>DSS<br>BV<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**==> picture [210 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>*Notes:<br>   1. V GS  = 10V<br>2.0    2. ID = 12A<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 0 50 100 150<br>TJ, Junction Temperature [ [o] C]<br>25<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature [ [o] C]<br>, [Normalized]<br>DS(on)<br>R<br>Drain-Source On-Resistance<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Drain Current vs. Case Temperature** 

**Figure 11. Eoss vs. Drain to Source Voltage** 

**==> picture [205 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>8<br>6<br>4<br>2<br>0<br>0 130 260 390 520 650<br>VDS, Drain to Source Voltage [V]<br>J]<br>μ<br> [<br>OSS<br>E<br>**----- End of picture text -----**<br>


www.onsemi.com 

**4** 

**==> picture [454 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
Typical Performance Characteristics  (Continued)<br>                                                  Figure 12. Transient Thermal Response Curve<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>      0.2<br>0.1       0.1       0.05 PDM<br>      0.02<br>      0.01 t 1<br>t 2<br>0.01 NOTES:<br>Z θ JC(t) = r(t) x R θ JC<br>R θ JC = 3.24  [o] C/W<br>SINGLE PULSE Peak T J  = P DM  x Z θ JC (t) + T C<br>Duty Cycle, D = t 1  / t 2<br>0.001<br>10-5 10-4 10-3 10-2 10-1 100 101 102<br>t, RECTANGULAR PULSE DURATION (sec)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


www.onsemi.com 

**5** 

**==> picture [392 x 401] intentionally omitted <==**

**----- Start of picture text -----**<br>
IG = const.<br>F<br>Charge<br> Figure 13. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>=n wa t on 4S t off<br> Figure 14. Resistive Switching Test Circuit & Waveforms<br>Vos oyL Eas= >4 Llas5<br>| D ~ dD BVpss = —_<br>of las |— _<br>: Rnr <r) FF Voo lo(t)<br>VGS TL DUT Vop<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

www.onsemi.com 

**6** 

**==> picture [352 x 542] intentionally omitted <==**

**----- Start of picture text -----**<br>
DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

www.onsemi.com 

**7** 

**==> picture [566 x 759] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.36 2.66<br>A B B<br>9.96 2.42<br>3.28<br>3.40 7.00 3.08<br>0.70<br>3.20<br>SEE NOTE "F" SEE NOTE "F"<br>6.88<br>6.48<br>1 X 45°<br>16.07<br>B<br>15.67<br>16.00<br>15.60<br> (3.23)  B<br>3<br>1<br>1.47<br>2.96<br>2.14 1.24<br>2.56<br>0.90<br>10.05 0.70<br>9.45 0.50 [M] A<br>30°<br>0.45<br>0.60<br>0.25 B<br>0.45<br> 2.54   2.54<br>4.90<br>B<br>4.50<br>NOTES:<br>  A. EXCEPT WHERE NOTED CONFORMS TO<br>EIAJ SC91A.<br>B DOES NOT COMPLY EIAJ STD. VALUE.<br>  C. ALL DIMENSIONS ARE IN MILLIMETERS.<br>  D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br> MOLD FLASH AND TIE BAR PROTRUSIONS.<br>  E. DIMENSION AND TOLERANCE AS PER ASME<br>Y14.5-1994.<br>  F. OPTION 1 - WITH SUPPORT PIN HOLE.<br>      OPTION 2 - NO SUPPORT PIN HOLE.<br>  G. DRAWING FILE NAME: TO220M03REV5<br>**----- End of picture text -----**<br>


ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 

© Semiconductor Components Industries, LLC 

www.onsemi.com 

**www.onsemi.com** 

**1**