FCP650N80Z

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **FCP650N80Z** 

## **N-Channel SuperFET[® ] II MOSFET 800 V, 10 A, 650 m**  

## **Features** 

- RDS(on) = 530 mTyp.) 

- Ultra Low Gate Charge (Typ. Qg = 27 nC) 

- Low Eoss (Typ. 2.8 uJ @ 400V) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

- ESD Improved Capability 

## **Applications** 

## **Description** 

SuperFET[®] II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. 

- AC - DC Power Supply 

- LED Lighting 

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**Absolute Maximum Ratings** TC = 25oC unless otherwise noted. **S Symbol Parameter FCP650N80Z Unit** VDSS Drain to Source Voltage 800 V - DC ±20 ~~a~~ VGSS Gate to Source Voltage - AC                                               (f > 1 Hz) ±30 V ID Drain Current - Continuous (T - Continuous (TCC = 25 = 100[o] C)[o] C) 6.310 A e IDM Drain Current - Pulsed ~~s~~ (Note 1) 24 A EAS Single Pulsed Avalanche Energy                                                                 (Note 2) 204 mJ IAR Avalanche Current                                                                                         (Note 1) 1.6 A EAR Repetitive Avalanche Energy                                                                       (Note 1) 1.62 mJ MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt                                                                         (Note 3) 20 PD Power Dissipation (T - Derate Above 25C = 25[o] C)[o] C 1.30162 W/W[o] C ee TJ, TSTG Operating and Storage Temperature Range ~~e~~ -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC 

## **Thermal Characteristics** 

**Symbol Parameter FCP650N80Z Unit** RJC Thermal Resistance, Junction to Case, Max. 0.77 oC/W ——————————— RJA Thermal Resistance, Junction to Ambient, Max. 62.5 rn ~~—~~ 

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©2015 Fairchild Semiconductor Corporation FCP650N80Z Rev. 1.0 

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## **Package Marking and Ordering Information** 

**Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity** FCP650N80Z FCP650N80Z TO-220 Tube N/A N/A 50 units **Electrical Characteristics** TC = 25[o] C unless otherwise noted. **Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics** BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25C 800 - - V / BVTJDSS Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25[o] C - 0.8 - V/[o] C IDSS Zero Gate Voltage Drain Current VVDSDS = 800 V, V = 640 V, VGS GS = 0 V,T= 0 V C = 125[o] C -- -- 25025 A ———-aa IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ~~e~~ ±10 A **On Characteristics** VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.8 mA 2.5 - 4.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 4 A - 530 650 m ———————————— gFS Forward Transconductance VDS = 20 V, ID = 4 A - 7.8 - S **Dynamic Characteristics** Ciss Input Capacitance - 1178 1565 pF Coss Output Capacitance f = 1 MHzVDS = 100 V, VGS = 0 V, - 36 48 pF Crss Reverse Transfer Capacitance - 0.84 - pF Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 18 - pF Coss (eff.) ~~=~~ Effective Output Capacitance VDS = 0 V to 480 V, V = GS = 0 V - 124 - pF Qg(tot) Total Gate Charge at 10V VDS = 640 V, ID = 8 A, - 27 35 nC Qgs Gate to Source Gate Charge VGS = 10 V - 6 - nC Qgd Gate to Drain “Miller” Charge (Note 4) - 11 - nC ~~=~~ ESR Equivalent Series Resistance f = 1 MHz - 1.9 -  **Switching Characteristics** td(on) Turn-On Delay Time - 17 44 ns tr Turn-On Rise Time VDD = 400 V, ID = 8 A, - 11 32 ns td(off) Turn-Off Delay Time VGS = 10 V, Rg = 4.7  - 40 90 ns tf Turn-Off Fall Time (Note 4) - 3.4 17 ns **Drain-Source Diode Characteristics** ~~=~~ IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 24 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 8 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 8 A, - 365 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/s - 5.9 - C **Notes:** 1. Repetitive rating: pulse width limited by maximum junction temperature. S 2. IAS = 1.6 A, RG = 25 , Starting TJ = 25 ~~S~~ C S== ~~e~~ == 3. ISD  10 A, di/dt  200 A/s, VDD  BVDSS, Starting TJ = 25C 4. Essentially independent of operating temperature typical characteristics. **2** www.fairchildsemi.com 

©2015 Fairchild Semiconductor Corporation FCP650N80Z Rev. 1.0 

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## **Typical Performance Characteristics** 

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Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>30 Veg = 10.0V|- 30<br>| 8.0V a<br>7.0V “ [a] ;<br>6.5V<br>10 | 6.0V | &P 10<br>II 5.5V =<br>22<br>**----- End of picture text -----**<br>


**Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage** 

**Figure 4. Body Diode Forward Voltage Variation vs. Source Current** 

**Figure 5. Capacitance Characteristics** 

**Figure 6. Gate Charge Characteristics** 

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©2015 Fairchild Semiconductor Corporation FCP650N80Z Rev. 1.0 

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## **Typical Performance Characteristics** (Continued) 

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       Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                            vs. Temperature<br>**----- End of picture text -----**<br>


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          Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Drain Current<br>                                         vs. Case Temperature<br>**----- End of picture text -----**<br>


**Figure 11. Eoss vs. Drain to Source Voltage** 

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©2015 Fairchild Semiconductor Corporation FCP650N80Z Rev. 1.0 

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## **Typical Performance Characteristics** (Continued) 

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©2015 Fairchild Semiconductor Corporation FCP650N80Z Rev. 1.0 

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IG = const.<br>F<br>Charge<br> Figure 13. Gate Charge Test Circuit & Waveform<br>Vos + Vos sox<br>Ves Vop<br>VGS fl DUT Ves)10% |<br>bon<br> Figure 14. Resistive Switching Test Circuit & Waveforms<br>-<br>Vos Exg=AS= “5 Las?LIAS<br>lo  . BVpss<br>of las<br>R<br>:<br>VGS Th r er) DUT Voo Vop lo(t)<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

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©2015 Fairchild Semiconductor Corporation FCP650N80Z Rev. 1.0 

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**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

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©2015 Fairchild Semiconductor Corporation FCP650N80Z Rev. 1.0 

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SUPPLIER "B" PACKAGE<br>SHAPE �����<br>   3.50<br>10.67<br>SUPPLIER "A" PACKAGE 9.65 E<br>SHAPE<br>3.40<br>2.50<br>16.30<br>IF PRESENT, SEE NOTE "D" 13.90<br>E<br>16.51 9.40<br>15.42<br>8.13 E<br>1 2 3<br>[2.46] C 2.704.10<br>14.04<br>2.13 12.70<br>2.06<br>FRONT VIEWS<br>4.70 1.62 1.62<br>4.00 1.42 [  H] 2.67 1.10<br>2.40<br>"A1" 8.65 1.00<br>SEE NOTE "F" 7.59 0.55<br>�� ��<br>OPTIONAL 6.69 �� ��<br>6.06<br>CHAMFER<br>E<br>14.30<br>11.50<br>NOTE "I" BOTTOM VIEW<br>NOTES:<br>   A)  REFERENCE JEDEC, TO-220, VARIATION AB<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>   C)  DIMENSIONS COMMON TO ALL PACKAGE<br>SUPPLIERS EXCEPT WHERE NOTED [   ].<br>3 2 1    D)  LOCATION OF MOLDED FEATURE MAY VARY<br>       (LOWER LEFT CORNER, LOWER CENTER<br>        AND CENTER OF THE PACKAGE)<br>   E  DOES NOT COMPLY JEDEC STANDARD VALUE.<br>   F) "A1" DIMENSIONS AS BELOW:<br>SINGLE GAUGE = 0.51 - 0.61<br>DUAL GAUGE     = 1.10 - 1.45<br>   G)  DRAWING FILE NAME: TO220B03REV9<br>   H   PRESENCE IS SUPPLIER DEPENDENT<br>    I)   SUPPLIER DEPENDENT MOLD LOCKING HOLES<br>          IN HEATSINK.<br>0.60<br>0.36 2.85 BACK VIEW<br>2.10<br>SIDE VIEW<br>**----- End of picture text -----**<br>


ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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