FCP380N60

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## **FCP380N60 / FCPF380N60 N-Channel SuperFET[® ] II MOSFET** 

**600 V, 10.2 A, 380 m** Ω 

## **Features** 

- 650 V @ TJ = 150°C 

- Typ. RDS(on) = 330 m Ω 

- Ultra Low Gate Charge (Typ. Qg = 30 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

## **Applications** 

- LCD / LED / PDP TV Lighting 

## **Description** 

SuperFET[®] II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. 

- Solar Inverter 

- AC-DC Power Supply 

**D G GDS TO-220 GDS TO-220F S Absolute Maximum Ratings** TC = 25[o] C unless otherwise noted. ~~OT~~ **Symbol Parameter FCP380N60 FCPF380N60 Unit** ~~a~~ VDSS Drain to Source Voltage ~~E—Eee~~ 600 V VGSS Gate to Source Voltage ~~pfpO~~ - DC- AC                                               (f > 1 Hz) ±20±30 V ID Drain Current ~~ee~~ - Continuous - Continuous ((TTCC = 25 = 100[o] C[o] C) ) 10.26.4 10.2*6.4* A ~~aI:~~ IDM Drain Current ~~a~~ - Pulsed ~~ce~~ (Note 1) 30.6 ~~ee~~ 30.6* A EAS ~~Ay~~ Single Pulsed Avalanche Energy (Note 2) 211.6 mJ ~~OT ~~ ama” | ~6§6 |~~ IAR Avalanche Current                                                                              (Note 1) 2.3 A ~~CO | § |~~ EAR ~~OO~~ Repetitive Avalanche Energy (Note 1) 1.06 mJ ~~es |~~ dv/dt ~~|OO~~ MOSFET dv/dt 100 V/ns ~~_~~ Peak Diode Recovery dv/dt                                                                (Note 3) 20 ~~| § 4~~ PD Power Dissipation - Derate Above 25(TC = 25[o] C)[o] C 0.85106 0.2531 W/W[o] C ~~rr —eEEEE eee§«§«=—fC a~~ TJ, TSTG ~~C~~ Operating and Storage Temperature Range ~~=~]~~ -55 to +150 oC ~~A~~ TL ~~(Re~~ Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC *Drain current limited by maximum junction temperature. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**FCP380N60**|**FCPF380N60**|**Unit**|
|---|---|---|---|---|
|RθJC|Thermal Resistance, Junction to Case, Max.|1.18|4|oC/W|
|RθJA|Thermal Resistance, Junction to Ambient, Max.|62.5|62.5||



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©2012 Fairchild Semiconductor Corporation FCP380N60 / FCPF380N60 Rev. C6 

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**Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity** FCP380N60 FCP380N60 TO-220 Tube N/A N/A 50 units FCPF380N60 FCPF380N60 TO-220F Tube N/A N/A 50 units **Electrical Characteristics** TC = 25[o] C unless otherwise noted. ~~OC~~ **Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics** BVDSS Drain to Source Breakdown Voltage VVGSGS = 0 V, I = 0 V, IDD = 10 mA, T = 10 mA, TJJ = 25 = 150 ° C ° C 600650-V Δ / BV Δ TDSSJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25[o] C - 0.6 - V/[o] C Drain to Source Avalanche Breakdown BVDS Voltage VGS = 0 V, ID = 10 A - 700 - V IDSS Zero Gate Voltage Drain Current VVDSDS = 480 V, V = 480 V, TC GS = 125= 0 V[o] C -- -- 101 μ A IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA ~~Se~~ **On Characteristics** ~~Seeeee~~ VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μ A 2.5 - 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 5 A - 0.33 0.38 Ω ~~——————————~~ gFS Forward Transconductance VDS = 20 V, ID = 5 A - 11 - S **Dynamic Characteristics** CCiossss Input CapacitanceOutput Capacitance Vf = 1 MHzDS = 25 V, VGS = 0 V, -- 1250905 12051665 pFpF Crss Reverse Transfer Capacitance - 45 60 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 23 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0V - 95 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 5 A, - 30 40 nC Qgs Gate to Source Gate Charge VGS = 10 V - 5 - nC Qgd Gate to Drain “Miller” Charge (Note 4) - 10 - nC ~~=)—————~~ ESR Equivalent Series Resistance f = 1 MHz - 1 - Ω **Switching Characteristics** td(on) Turn-On Delay Time - 14 38 ns tr Turn-On Rise Time VDD = 380 V, ID = 5 A, - 7 24 ns td(off) Turn-Off Delay Time VGS = 10 V, RG = 4.7 Ω - 45 100 ns tf Turn-Off Fall Time (Note 4) - 6 22 ns ~~SS EEF =~~ **Drain-Source Diode Characteristics** IS Maximum Continuous Drain to Source Diode Forward Current - - 10.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30.6 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 5 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 5 A, - 240 - ns ~~a~~ Qrr Reverse Recovery Charge dIF/dt = 100 A/ μ s - 2.7 - μ C **Notes:** 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.3 A, VDD = 50 V, RG = 25 Ω , starting TJ = 25 ° C. 

3. ISD ≤ 5.1 A, di/dt ≤ 200 A/ μ s, VDD ≤ BVDSS, starting TJ = 25 ° C. 

4. Essentially independent of operating temperature typical characteristics. 

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©2012 Fairchild Semiconductor Corporation FCP380N60 / FCPF380N60 Rev. C6 

**2** 

## **Typical Performance Characteristics** 

**Figure 1. On-Region Characteristics** 

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Figure 2. Transfer Characteristics<br>**----- End of picture text -----**<br>


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50 50<br>V GS = 15.0V       *Notes:<br>           10.0V    1. V DS  = 20V<br>             8.0V    2. 250 μ s Pulse Test<br>             7.0V<br>10<br>             6.0V<br>             5.5V<br>             5.0V 10 150 o C<br>             4.5V<br>25 o C<br>1<br>ma<br>-55 o C<br>* Notes:<br>   1. 250 μ s Pulse Test<br>   2. TC = 25 [o] C<br>0.1 1<br>0.1 ca 1 aa) 10 3 4 5 6 7 8<br>VDS, Drain to Source Voltage[V] VGS, Gate to Source Voltage[V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>1.2 100<br>1.0<br> 150 [o] C<br>0.8<br>25 [o] C<br>Gaeeeeeeenee 10 Pre =a<br>0.6<br>VGS = 10V<br>0.4 V GS  = 20V *Notes:<br>1. VGS = 0V<br>*Note: TC = 25 [o] C 2. 250 μ s Pulse Test<br>0.2 1<br>0 5 10 15 20 25 30 0.3 0.6 0.9 1.2 1.5<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>10000 10<br>Ciss<br>VDS = 120V<br>1000 8 VDS = 300V<br>VDS = 480V<br>100 6<br>Coss<br>=—]| |<br>10 *Note: 4<br>   1. VGS = 0V<br>   2. f = 1MHz<br>C rss<br>1 S| Ciss = Cgs + Cgd (Cds = shorted) 2 pe<br>Coss = Cds + Cgd<br>Crss = Cgd *Note: ID = 5A<br>0.1 ee 0 / | ft tf<br>0.1 1 10 100 1000 0 9 18 27 36<br>VDS, Drain to Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current[A] , Drain Current[A]<br>ID ID<br>],<br>Ω<br> [<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>IS<br>Drain to Source On-Resistance<br>, Gate-Source Voltage [V]<br>Capacitances [pF] , Gate to Source Voltage [V]GS<br>VGS<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Body Diode Forward Voltage Variation vs. Source Current** 

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©2012 Fairchild Semiconductor Corporation FCP380N60 / FCPF380N60 Rev. C6 

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## **Typical Performance Characteristics** (Continued) 

**Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation vs. Temperature                                                            vs. Temperature** 

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1.20 3.0<br>1.15 ee eee ee 2.5<br>1.10<br>1.05 SERSSBE 2.0 HG<br>1.5<br>0 D7 4002 I oon Sy<br>1.00 A<br>1.0<br>0.95<br>Guay 4eeeeeee a<br>*Notes: 0.5 *Notes:<br>0.90    1. VGS = 0V    1. VGS = 10V<br>   2. ID = 10mA    2. ID = 5A<br>0.85 BREE 0.0 cer<br>EaGeeeee Pp<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [ [o] C] TJ, Junction Temperature [ [o] C]<br>        Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Safe Operating Area<br>                        for FCP380N60                                                                for FCPF380N60<br>50 SEE STC ame STET ESTEE 50 EET 7<br>10 μ s 10 μ s<br>10 100 μ s 10 100 μ s<br>1ms 1ms<br>10ms 10ms<br>DC<br>1 a 1 RS DC<br>Operation in This Area  Operation in This Area<br>is Limited by R DS(on) is Limited by R DS(on)<br>0.1 *Notes: 0.1 *Notes:<br>   1. TC = 25 [o] C    1. TC = 25 [o] C<br>   2. T J  = 150 [o] C    2. T J  = 150 [o] C<br>   3. Single Pulse    3. Single Pulse<br>0.01 pa 0.01 -<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain to Source Voltage [V] VDS, Drain to Source Voltage [V]<br>        Figure 11. Maximum Drain Current                             Figure 12. Eoss vs. Drain to Source Voltage<br>                          vs. Case Temperature<br>12 6<br>5<br>9 me] OR<br>4<br>caue EEE<br>6 3<br>PEEEFRRSECH 9 FEEEESEEE ZF<br>2<br>3 PEPPER) FRA<br>1<br>0 0<br>25 PPE 50 75 100 ERY 125 \ 150 ) =6 0 eepf 100 200 300 400 500 600<br>TC, Case Temperature  [ [o] C ] VDS, Drain to Source Voltage [V]<br>, [Normalized] , [Normalized]<br>DSS DS(on)<br>BV R<br>Drain to Source On-Resistance<br>Drain to Source Breakdown Voltage<br>, Drain Current [A] , Drain Current [A]<br>ID ID<br>J]<br>μ<br>, [<br>OSS<br>E<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Safe Operating Area for FCP380N60                                                                for FCPF380N60** 

**Figure 11. Maximum Drain Current                             Figure 12. Eoss vs. Drain to Source Voltage vs. Case Temperature** 

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©2012 Fairchild Semiconductor Corporation FCP380N60 / FCPF380N60 Rev. C6 

**4** 

## **Typical Performance Characteristics** (Continued) 

## **Figure 13. Transient Thermal Response Curve for FCP380N60** 

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2<br>1<br>0.5<br>Sees<br>0.2<br>0.1<br>0.1 Ea PDM<br>0.05 t1<br>0.02 *Notes: t2<br>0.01    1. Z θ JC(t) = 1.18 [o] C/W Max.<br>Single pulse    2. Duty Factor, D= t1/t2<br>   3. TJM - TC = PDM * Z θ JC(t)<br>0.01<br>10-5 10-4 10-3 10-2 10-1 100<br>  tRectangular Pulse Duration [sec]1, Rectangular Pulse Duration [sec]<br>Figure 14. Transient Thermal Response Curve for FCPF380N60<br>5<br>0.5<br>1<br>0.2<br>0.1<br>0.05 P DM<br>t1<br>0.1 0.02 t2<br>0.01 *Notes:<br>Single pulse    1. Z θ JC (t) = 4 [o] C/W Max.<br>   2. Duty Factor, D= t1/t2<br>   3. TJM - TC = PDM * Z θ JC(t)<br>0.01<br>10-5 10-4 10-3 10-2 10-1 1 10 100<br>  tRectangular Pulse Duration [sec]1, Rectangular Pulse Duration [sec]<br>oC/W] ]JC θ<br>(t), Thermal Response [<br>ZThermal Response [ZJC θ<br>oC/W]  ] ZJC θ<br>[<br>(t), Thermal Response [<br>ZJC θ Thermal Response<br>**----- End of picture text -----**<br>


**Figure 14. Transient Thermal Response Curve for FCPF380N60** 

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©2012 Fairchild Semiconductor Corporation FCP380N60 / FCPF380N60 Rev. C6 

**5** 

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IG = const.<br>F<br>Charge<br> Figure 15. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>=n wa t on 4S t off<br> Figure 16. Resistive Switching Test Circuit & Waveforms<br>Vos oy5 EASa“a Las?LIAS<br>lo oy} BVpss<br>of las<br>>in (ad) =F Von Ip (t)<br>VGS TL DUT Vop<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms** 

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©2012 Fairchild Semiconductor Corporation FCP380N60 / FCPF380N60 Rev. C6 

**6** 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ff}<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>eerie<br>Body Diode<br>Forward Voltage Drop<br> Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms<br>**----- End of picture text -----**<br>


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©2012 Fairchild Semiconductor Corporation FCP380N60 / FCPF380N60 Rev. C6 

**7** 

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SUPPLIER "B" PACKAGE<br>SHAPE �����<br>   3.50<br>10.67<br>SUPPLIER "A" PACKAGE 9.65 E<br>SHAPE<br>3.40<br>2.50<br>16.30<br>IF PRESENT, SEE NOTE "D" 13.90<br>E<br>16.51 9.40<br>15.42<br>8.13 E<br>1 2 3<br>[2.46] C 2.704.10<br>14.04<br>2.13 12.70<br>2.06<br>FRONT VIEWS<br>4.70 1.62 1.62<br>4.00 1.42 [  H] 2.67 1.10<br>2.40<br>"A1" 8.65 1.00<br>SEE NOTE "F" 7.59 0.55<br>�� ��<br>OPTIONAL 6.69 �� ��<br>6.06<br>CHAMFER<br>E<br>14.30<br>11.50<br>NOTE "I" BOTTOM VIEW<br>NOTES:<br>   A)  REFERENCE JEDEC, TO-220, VARIATION AB<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>   C)  DIMENSIONS COMMON TO ALL PACKAGE<br>SUPPLIERS EXCEPT WHERE NOTED [   ].<br>3 2 1    D)  LOCATION OF MOLDED FEATURE MAY VARY<br>       (LOWER LEFT CORNER, LOWER CENTER<br>        AND CENTER OF THE PACKAGE)<br>   E  DOES NOT COMPLY JEDEC STANDARD VALUE.<br>   F) "A1" DIMENSIONS AS BELOW:<br>SINGLE GAUGE = 0.51 - 0.61<br>DUAL GAUGE     = 1.10 - 1.45<br>   G)  DRAWING FILE NAME: TO220B03REV9<br>   H   PRESENCE IS SUPPLIER DEPENDENT<br>    I)   SUPPLIER DEPENDENT MOLD LOCKING HOLES<br>          IN HEATSINK.<br>0.60<br>0.36 2.85 BACK VIEW<br>2.10<br>SIDE VIEW<br>**----- End of picture text -----**<br>


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10.36 2.66<br>A B B<br>9.96 2.42<br>3.28<br>3.40 7.00 3.08<br>0.70<br>3.20<br>SEE NOTE "F" SEE NOTE "F"<br>6.88<br>6.48<br>1 X 45°<br>16.07<br>B<br>15.67<br>16.00<br>15.60<br> (3.23)  B<br>3<br>1<br>1.47<br>2.96<br>2.14 1.24<br>2.56<br>0.90<br>10.05 0.70<br>9.45 0.50 [M] A<br>30°<br>0.45<br>0.60<br>0.25 B<br>0.45<br> 2.54   2.54<br>4.90<br>B<br>4.50<br>NOTES:<br>  A. EXCEPT WHERE NOTED CONFORMS TO<br>EIAJ SC91A.<br>B DOES NOT COMPLY EIAJ STD. VALUE.<br>  C. ALL DIMENSIONS ARE IN MILLIMETERS.<br>  D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br> MOLD FLASH AND TIE BAR PROTRUSIONS.<br>  E. DIMENSION AND TOLERANCE AS PER ASME<br>Y14.5-1994.<br>  F. OPTION 1 - WITH SUPPORT PIN HOLE.<br>      OPTION 2 - NO SUPPORT PIN HOLE.<br>  G. DRAWING FILE NAME: TO220M03REV5<br>**----- End of picture text -----**<br>


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