FCP165N60E

## **Is Now Part of** 

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## **FCP165N60E** 

## **N-Channel SuperFET[® ] II Easy-Drive MOSFET** 

## **600 V, 23 A, 165 m** Ω 

## **Features** 

- 650 V @TJ = 150°C 

- Typ. RDS(on) = 132 m Ω 

- Ultra Low Gate Charge (Typ. Qg = 57 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

## **Applications** 

- Telecom / Sever Power Supplies 

- Industrial Power Supplies 

## **Description** 

SuperFET[®] II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series. 

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**Absolute Maximum Ratings** TC = 25oC unless otherwise noted. 

**Symbol Parameter FCP165N60E Unit** VDSS Drain to Source Voltage 600 V - DC ±20 ~~a~~ IVDGSS Gate to Source VoltageDrain Current - Continuous  - AC                                                - Continuous ((TTCC = 25 = 100[o] C[o] C) ) (f > 1 Hz) ~~——~~ ±301423 AV ~~a~~ IDM Drain Current - Pulsed (Note 1) 69 A EAS Single Pulsed Avalanche Energy (Note 2) 525 mJ IAR Avalanche Current                                                                                         (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 2.27 mJ MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt                                                                         (Note 3) 20 PD Power Dissipation - Derate Above 25 (TC = 25[o] C)[o] C 1.82227 W/W[o] C ~~a~~ TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC **Thermal Characteristics Symbol Parameter FCP165N60E Unit** R θ JC Thermal Resistance, Junction to Case, Max. 0.55 oC/W ~~——————————————~~ R θ JA Thermal Resistance, Junction to Ambient, Max. 40 

www.fairchildsemi.com 

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©2015 Fairchild Semiconductor Corporation FCP165N60E Rev. C0 

## **Package Marking and Ordering Information** 

|**Electrical Characteristics**TC= 25oC unless otherwise noted.<br>**Off Characteristics**<br>**On Characteristics**<br>**Dynamic Characteristics**<br>**Part Number**<br>**Top Mark**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FCP165N60E<br>FCP165N60E<br>TO-220<br>Tube<br>N/A<br>N/A<br>50 units<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>VGS= 0 V, ID= 10 mA, TJ= 25°C<br>600<br>-<br>-<br>V<br>VGS= 0 V, ID= 10 mA, TJ= 150°C<br>650<br>-<br>-<br>V<br>ΔBVDSS<br>/ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 10 mA, Referenced to 25oC<br>-<br>0.7<br>-<br>V/oC<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 600 V, VGS= 0 V<br>-<br>-<br>1<br>μA<br>VDS= 480 V, VGS= 0 V,TC= 125oC<br>-<br>1.46<br>-<br>IGSS<br>Gate to BodyLeakage Current<br>VGS= ±20 V, VDS= 0 V<br>-<br>-<br>±100<br>nA<br>VGS(th)<br>Gate Threshold Voltage<br>VGS= VDS, ID= 250μA<br>2.5<br>-<br>3.5<br>V<br>RDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10 V, ID= 11.5 A<br>-<br>132<br>165<br>mΩ<br>gFS<br>Forward Transconductance<br>VDS= 20 V, ID= 11.5 A<br>-<br>20<br>-<br>S<br>Ciss<br>Input Capacitance<br>VDS= 380 V, VGS= 0 V,<br>f = 1 MHz<br>-<br>1830<br>2434<br>pF<br>Coss<br>Output Capacitance<br>-<br>50<br>67<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>-<br>8.6<br>-<br>pF<br>Coss(eff.)<br>Effective Output Capacitance<br>VDS= 0 V to 480 V, VGS= 0 V<br>-<br>204<br>-<br>pF<br>Qg(tot)<br>Total Gate Charge at 10V<br>VDS= 380 V, ID= 11.5 A,<br>VGS= 10 V<br>(Note  4)<br>-<br>57<br>75<br>nC<br>Qgs<br>Gate to Source Gate Charge<br>-<br>8.3<br>-<br>nC<br>Qgd<br>Gate to Drain “Miller” Charge<br>-<br>24<br>-<br>nC<br>~~ee~~<br>~~——————————~~|
|---|
|ESR<br>Equivalent Series Resistance<br>f = 1 MHz<br>-<br>6<br>-<br>Ω|
|**Switching Characteristics**|
|**Drain-Source Diode Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VDD= 380 V, ID= 11.5 A,<br>VGS= 10 V, Rg= 4.7Ω<br>(Note 4)<br>-<br>22<br>55<br>ns<br>tr<br>Turn-On Rise Time<br>-<br>18<br>46<br>ns<br>td(off)<br>Turn-Off DelayTime<br>-<br>100<br>210<br>ns<br>tf<br>Turn-Off Fall Time<br>-<br>18<br>47<br>ns<br>~~==—~~<br>~~BE~~|
|IS<br>Maximum Continuous Drain to Source Diode Forward Current<br>-<br>-<br>23<br>A<br>ISM<br>Maximum Pulsed Drain to Source Diode Forward Current<br>-<br>-<br>69<br>A<br>VSD<br>Drain to Source Diode Forward Voltage<br>VGS= 0 V, ISD= 11.5 A<br>-<br>-<br>1.2<br>V<br>trr<br>Reverse RecoveryTime<br>VGS= 0 V, ISD= 11.5 A,<br>dIF/dt = 100 A/μs<br>-<br>326<br>-<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>-<br>5.3<br>-<br>μC<br>~~Se~~|



**Notes:** 

1. Repetitive rating: pulse width limited by maximum junction temperature. 

2. IAS = 5.0 A, RG = 25 Ω , Starting TJ = 25 ° C 

3. ISD ≤ 11.5 A, di/dt ≤ 200 A/ μ s, VDD ≤ 380 V, Starting TJ = 25 ° C 

4. Essentially independent of operating temperature. 

©2015 Fairchild Semiconductor Corporation FCP165N60E Rev. C0 

www.fairchildsemi.com 

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## **Typical Performance Characteristics** 

**Figure 1. On-Region Characteristics** 

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Figure 2. Transfer Characteristics<br>**----- End of picture text -----**<br>


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100 VGS = 10.0V       100 *Notes:<br>             8.0V    1. VDS = 20V<br>             7.0V    2. 250 μ s Pulse Test<br>             6.0V<br>             5.0V van A<br>             4.5V<br>150oC<br>10 10<br>25oC<br>*Notes:<br>   1. 250 μ s Pulse Test -55oC<br>   2. TC = 25 [o] C<br>1 Ae) 1 LAL<br>0.3 1 10 20 2 3 4 5 6 7<br>VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>0.4 100<br>*Note: TC = 25 [o] C *Notes:<br>1. VGS = 0V<br>10 2. 250 μ s Pulse Test<br>0.3 aa aT<br> 150 [o] C<br>1<br>VGS = 10V<br>0.2<br>25 [o] C<br>0.1<br>VGS = 20V<br>0.1 a Baya cine -55oC<br>a aa<br>0.01<br>0.0 faleeeee 0.001 Ep ieeeeeaT Es<br>0 20 40 60 80 0.0 0.3 0.6 0.9 1.2 1.5<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>100000 10<br>*Note: ID = 11.5A<br>10000 TT 8 |W VDS = 120V<br>Ciss<br>1000 =e Vi, VDS = 300V<br>6<br>100 Coss V DS  = 480V<br>*Note: 4<br>10 PTS]    2. f = 1MHz   1. VGS = 0V Crss GEES<br>1 py Ciss = Cgs + Cgd (Cds = shorted) 2 FAnEEEEEee<br>Coss = Cds + Cgd<br>Crss = Cgd<br>0.1 a 0 PEELE<br>0.1 1 10 100 600 0 12 24 36 48 60<br>VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current[A]ID , Drain Current[A]ID<br>],<br>Ω<br> [<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>Drain-Source On-Resistance IS<br>, Gate-Source Voltage [V]<br>Capacitances [pF] GS<br>V<br>**----- End of picture text -----**<br>


©2015 Fairchild Semiconductor Corporation FCP165N60E Rev. C0 

www.fairchildsemi.com 

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Typical Performance Characteristics  (Continued)<br>       Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                            vs. Temperature<br>1.2 2.5<br>*Notes: *Notes:<br>   1. VGS = 0V    1. VGS = 10V<br>   2. ID = 10mA    2. ID = 11.5A<br>1.1 2.0<br>ttt<br>1.0 1.5<br>ti taAL<br>0.9 1.0<br>na alee<br>0.8 0.5 EZ4annn<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [ [o] C] TJ, Junction Temperature [ [o] C]<br>          Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Drain Current<br>                                                                                                                     vs. Case Temperature<br>100 25<br>10 μ s<br>100 μ s 20<br>10 Sy ST<br>1ms<br>15<br>DC<br>1 Operation in This Area<br>is Limited by R DS(on) 10<br>*Notes:<br>0.1 TC = 25 [o] C 5<br>TJ = 150 [o] C<br>R θ JC  = 0.55 [o] C/W<br>0.01 Sail 0 P eN<br>1 10 100 1000 25 50 75 100 125 150<br>TC, Case Temperature [ [o] C]<br>   Figure 11. Eoss vs. Drain to Source Voltage<br>12.0<br>9.6 TT [LZ<br>7.2 naa<br>4.8<br>Sane? aann<br>2.4 Pr|<br>0 (Annee<br>0 120 240 360 480 600<br>VDS, Drain to Source Voltage [V]<br>, [Normalized] , [Normalized]<br>DSS DS(on)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]<br>ID , Drain Current [A]<br>ID<br>J]<br>μ<br>, [<br>OSS<br>E<br>**----- End of picture text -----**<br>


©2015 Fairchild Semiconductor Corporation FCP165N60E Rev. C0 

www.fairchildsemi.com 

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## **Typical Performance Characteristics** (Continued) 

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1<br>0.5<br>0.2<br>0.1 PDM<br>0.1<br>t 1<br>0.05 t 2<br>*Notes:<br>0.02<br>0.01    1. Z θ JC(t) = 0.55 [o] C/W Max.<br>0.01 Single pulse    2. Duty Factor, D= t 1 /t 2<br>   3. TJM - TC = PDM * Z θ JC(t)<br>fl<br>0.005<br>10-5 10-4 10-3 10-2 10-1 1 10<br>t1, Rectangular Pulse Duration [sec]<br>oC/W]Thermal Response [<br>(t),<br>ZJC θ<br>**----- End of picture text -----**<br>


©2015 Fairchild Semiconductor Corporation FCP165N60E Rev. C0 

www.fairchildsemi.com 

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IG = const.<br>a<br>Charge<br> Figure 13. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>te wa t on LS t off<br> Figure 14. Resistive Switching Test Circuit & Waveforms<br>Vos ryA EAS™a“5 Las?“IAS<br>lo on} BVpss<br>oF las<br>: R (ie) =F Voo lo (t)<br>VGS<br>q t DUT Vop<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

©2015 Fairchild Semiconductor Corporation FCP165N60E Rev. C0 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------Gate Pulse Period 10V<br>( Driver )<br>——<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Nee<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>TT<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

©2015 Fairchild Semiconductor Corporation FCP165N60E Rev. C0 

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SUPPLIER "B" PACKAGE<br>SHAPE �����<br>   3.50<br>10.67<br>SUPPLIER "A" PACKAGE 9.65 E<br>SHAPE<br>3.40<br>2.50<br>16.30<br>IF PRESENT, SEE NOTE "D" 13.90<br>E<br>16.51 9.40<br>15.42<br>8.13 E<br>1 2 3<br>[2.46] C 2.704.10<br>14.04<br>2.13 12.70<br>2.06<br>FRONT VIEWS<br>4.70 1.62 1.62<br>4.00 1.42 [  H] 2.67 1.10<br>2.40<br>"A1" 8.65 1.00<br>SEE NOTE "F" 7.59 0.55<br>�� ��<br>OPTIONAL 6.69 �� ��<br>6.06<br>CHAMFER<br>E<br>14.30<br>11.50<br>NOTE "I" BOTTOM VIEW<br>NOTES:<br>   A)  REFERENCE JEDEC, TO-220, VARIATION AB<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>   C)  DIMENSIONS COMMON TO ALL PACKAGE<br>SUPPLIERS EXCEPT WHERE NOTED [   ].<br>3 2 1    D)  LOCATION OF MOLDED FEATURE MAY VARY<br>       (LOWER LEFT CORNER, LOWER CENTER<br>        AND CENTER OF THE PACKAGE)<br>   E  DOES NOT COMPLY JEDEC STANDARD VALUE.<br>   F) "A1" DIMENSIONS AS BELOW:<br>SINGLE GAUGE = 0.51 - 0.61<br>DUAL GAUGE     = 1.10 - 1.45<br>   G)  DRAWING FILE NAME: TO220B03REV9<br>   H   PRESENCE IS SUPPLIER DEPENDENT<br>    I)   SUPPLIER DEPENDENT MOLD LOCKING HOLES<br>          IN HEATSINK.<br>0.60<br>0.36 2.85 BACK VIEW<br>2.10<br>SIDE VIEW<br>**----- End of picture text -----**<br>


ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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