FCP104N60

## **Is Now Part of** 

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## **FCP104N60** 

## **N-Channel SuperFET[® ] II MOSFET** 

## **600 V, 37 A, 104 m** Ω 

## **Features** 

- 650 V @ TJ = 150°C 

- Typ. RDS(on) = 96 m Ω 

- Ultra Low Gate Charge (Typ. Qg = 63 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

## **Applications** 

## **Description** 

SuperFET[®] II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. 

- Telecom / Sever Power Supplies 

- Industrial Power Supplies 

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**S** 

**Absolute Maximum Ratings** TC = 25oC unless otherwise noted. **Symbol Parameter FCP104N60 Unit** VDSS Drain to Source Voltage 600 V - DC ±20 ~~$a~~ VGSS Gate to Source Voltage - AC                                               (f > 1 Hz) ±30 V ID Drain Current - Continuous (T - Continuous (TCC = 25 = 100[o] C)[o] C) 2437 A ~~a~~ IDM Drain Current - Pulsed (Note 1) 111 A EAS Single Pulsed Avalanche Energy                                                                 (Note 2) 809 mJ IAR Avalanche Current                                                                                         (Note 1) 6.8 A EAR Repetitive Avalanche Energy                                                                       (Note 1) 3.57 mJ MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt                                                                         (Note 3) 20 PD Power Dissipation - Derate Above 25 (TC = 25[o] C)[o] C 2.85357 W/W[o] C ~~a~~ TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC **Thermal Characteristics Symbol Parameter FCP104N60 Unit** R θ JC Thermal Resistance, Junction to Case, Max. 0.35 oC/W ~~——————~~ R θ JA Thermal Resistance, Junction to Ambient, Max. 40 

www.fairchildsemi.com 

©2014 Fairchild Semiconductor Corporation **1** FCP104N60 Rev. C0 

## **Package Marking and Ordering Information** 

|**Electrical Characteristics**TC= 25oC unless otherwise noted.<br>**Off Characteristics**<br>**On Characteristics**<br>**Dynamic Characteristics**<br>**Part Number**<br>**Top Mark**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FCP104N60<br>FCP104N60<br>TO-220<br>Tube<br>N/A<br>N/A<br>50 units<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>VGS= 0 V, ID= 10 mA, TJ= 25°C<br>600<br>-<br>-<br>V<br>VGS= 0 V, ID= 10 mA, TJ= 150°C<br>650<br>-<br>-<br>V<br>ΔBVDSS<br>/ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 10 mA, Referenced to 25oC<br>-<br>0.67<br>-<br>V/oC<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 600 V, VGS= 0 V<br>-<br>-<br>1<br>μA<br>VDS= 480 V, VGS= 0 V,TC= 125oC<br>-<br>1.98<br>-<br>IGSS<br>Gate to BodyLeakage Current<br>VGS= ±20 V, VDS= 0 V<br>-<br>-<br>±100<br>nA<br>VGS(th)<br>Gate Threshold Voltage<br>VGS= VDS, ID= 250μA<br>2.5<br>-<br>3.5<br>V<br>RDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10 V, ID= 18.5 A<br>-<br>96<br>104<br>mΩ<br>gFS<br>Forward Transconductance<br>VDS= 20 V, ID= 18.5 A<br>-<br>33<br>-<br>S<br>~~ee~~<br>~~——————————~~|**Electrical Characteristics**TC= 25oC unless otherwise noted.<br>**Off Characteristics**<br>**On Characteristics**<br>**Dynamic Characteristics**<br>**Part Number**<br>**Top Mark**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FCP104N60<br>FCP104N60<br>TO-220<br>Tube<br>N/A<br>N/A<br>50 units<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>VGS= 0 V, ID= 10 mA, TJ= 25°C<br>600<br>-<br>-<br>V<br>VGS= 0 V, ID= 10 mA, TJ= 150°C<br>650<br>-<br>-<br>V<br>ΔBVDSS<br>/ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 10 mA, Referenced to 25oC<br>-<br>0.67<br>-<br>V/oC<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 600 V, VGS= 0 V<br>-<br>-<br>1<br>μA<br>VDS= 480 V, VGS= 0 V,TC= 125oC<br>-<br>1.98<br>-<br>IGSS<br>Gate to BodyLeakage Current<br>VGS= ±20 V, VDS= 0 V<br>-<br>-<br>±100<br>nA<br>VGS(th)<br>Gate Threshold Voltage<br>VGS= VDS, ID= 250μA<br>2.5<br>-<br>3.5<br>V<br>RDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10 V, ID= 18.5 A<br>-<br>96<br>104<br>mΩ<br>gFS<br>Forward Transconductance<br>VDS= 20 V, ID= 18.5 A<br>-<br>33<br>-<br>S<br>~~ee~~<br>~~——————————~~|**Electrical Characteristics**TC= 25oC unless otherwise noted.<br>**Off Characteristics**<br>**On Characteristics**<br>**Dynamic Characteristics**<br>**Part Number**<br>**Top Mark**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FCP104N60<br>FCP104N60<br>TO-220<br>Tube<br>N/A<br>N/A<br>50 units<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>VGS= 0 V, ID= 10 mA, TJ= 25°C<br>600<br>-<br>-<br>V<br>VGS= 0 V, ID= 10 mA, TJ= 150°C<br>650<br>-<br>-<br>V<br>ΔBVDSS<br>/ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 10 mA, Referenced to 25oC<br>-<br>0.67<br>-<br>V/oC<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 600 V, VGS= 0 V<br>-<br>-<br>1<br>μA<br>VDS= 480 V, VGS= 0 V,TC= 125oC<br>-<br>1.98<br>-<br>IGSS<br>Gate to BodyLeakage Current<br>VGS= ±20 V, VDS= 0 V<br>-<br>-<br>±100<br>nA<br>VGS(th)<br>Gate Threshold Voltage<br>VGS= VDS, ID= 250μA<br>2.5<br>-<br>3.5<br>V<br>RDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10 V, ID= 18.5 A<br>-<br>96<br>104<br>mΩ<br>gFS<br>Forward Transconductance<br>VDS= 20 V, ID= 18.5 A<br>-<br>33<br>-<br>S<br>~~ee~~<br>~~——————————~~|**Electrical Characteristics**TC= 25oC unless otherwise noted.<br>**Off Characteristics**<br>**On Characteristics**<br>**Dynamic Characteristics**<br>**Part Number**<br>**Top Mark**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FCP104N60<br>FCP104N60<br>TO-220<br>Tube<br>N/A<br>N/A<br>50 units<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>VGS= 0 V, ID= 10 mA, TJ= 25°C<br>600<br>-<br>-<br>V<br>VGS= 0 V, ID= 10 mA, TJ= 150°C<br>650<br>-<br>-<br>V<br>ΔBVDSS<br>/ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 10 mA, Referenced to 25oC<br>-<br>0.67<br>-<br>V/oC<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 600 V, VGS= 0 V<br>-<br>-<br>1<br>μA<br>VDS= 480 V, VGS= 0 V,TC= 125oC<br>-<br>1.98<br>-<br>IGSS<br>Gate to BodyLeakage Current<br>VGS= ±20 V, VDS= 0 V<br>-<br>-<br>±100<br>nA<br>VGS(th)<br>Gate Threshold Voltage<br>VGS= VDS, ID= 250μA<br>2.5<br>-<br>3.5<br>V<br>RDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10 V, ID= 18.5 A<br>-<br>96<br>104<br>mΩ<br>gFS<br>Forward Transconductance<br>VDS= 20 V, ID= 18.5 A<br>-<br>33<br>-<br>S<br>~~ee~~<br>~~——————————~~|
|---|---|---|---|
|Ciss<br>Input Capacitance<br>VDS= 380 V, VGS= 0 V,<br>f = 1 MHz<br>Coss<br>Output Capacitance||-<br>3130<br>-<br>75|4165<br>pF<br>100<br>pF|
|Crss<br>Reverse Transfer Capacitance||-<br>3.66|-<br>pF|
|Coss(eff.)<br>Effective Output Capacitance<br>VDS= 0 V to 480 V, VGS= 0 V||-<br>280|-<br>pF|
|Qg(tot)<br>Total Gate Charge at 10V<br>VDS= 380 V, ID= 18.5 A,||-<br>63|82<br>nC|
|VGS= 10 V<br>Qgs<br>Gate to Source Gate Charge||-<br>14|-<br>nC|
|(Note  4)<br>Qgd<br>Gate to Drain “Miller” Charge||-<br>15|-<br>nC|
|ESR<br>Equivalent Series Resistance<br>f = 1 MHz||-<br>0.97|-<br>Ω|
|**Switching Characteristics**||||
|**Drain-Source Diode Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VDD= 380 V, ID= 18.5 A,<br>VGS= 10 V, Rg= 4.7Ω<br>(Note 4)<br>-<br>26<br>62<br>ns<br>tr<br>Turn-On Rise Time<br>-<br>18<br>46<br>ns<br>td(off)<br>Turn-Off DelayTime<br>-<br>72<br>154<br>ns<br>tf<br>Turn-Off Fall Time<br>-<br>3.3<br>17<br>ns<br>~~==—~~<br>~~BE~~||||
|IS<br>Maximum Continuous Drain to Source Diode Forward Current<br>-<br>-<br>37<br>A<br>ISM<br>Maximum Pulsed Drain to Source Diode Forward Current<br>-<br>-<br>114<br>A<br>VSD<br>Drain to Source Diode Forward Voltage<br>VGS= 0 V, ISD= 18.5 A<br>-<br>-<br>1.2<br>V<br>trr<br>Reverse RecoveryTime<br>VGS= 0 V, ISD= 18.5 A,<br>dIF/dt = 100 A/μs<br>-<br>414<br>-<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>-<br>8.8<br>-<br>μC<br>~~Se~~||||
|**Notes:**||||



1. Repetitive rating: pulse width limited by maximum junction temperature. 

2. IAS = 6.8 A, RG = 25 Ω , Starting TJ = 25 ° C 

3. ISD ≤ 18.5 A, di/dt ≤ 200 A/ μ s, VDD ≤ 380 V, Starting TJ = 25 ° C 

4. Essentially independent of operating temperature. 

©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 

www.fairchildsemi.com 

**2** 

## **Typical Performance Characteristics** 

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Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>100 200<br>VGS = 10.0V       *Notes:<br>            8.0V 100    1. V DS = 10V<br>            6.0V    2. 250 μ s Pulse Test<br>            5.5V<br>            5.0V<br>            4.5V<br>            4.0V 150oC<br>10 25oC<br>10<br>-55oC<br>a= *Notes: f<br>   1. 250 μ s Pulse Test<br>   2. TC = 25 [o] C<br>1 APT 1<br>0.3 1 10 20 2 3 4 5 6 7<br>VDS, Drain-Source Voltage[V] | ) LL VGS, Gate-Source Voltage[V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>200<br>0.24 100 *Notes:<br>*Note: TC = 25 [o] C 1. VGS = 0V<br>2. 250 μ s Pulse Test<br>10<br>0.20<br>pp ty an<br> 150 [o] C<br>1<br>0.16<br>25 [o] C<br>A 0.1 Ae<br>VGS = 10V<br>0.12<br>0.01<br>AL EP<br>VGS = 20V<br>0.001<br>0.08 | 0.0 eae 0.3 iegeee 0.6 0.9 1.2 1.5<br>0 20 40 60 80 100<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>20000 10<br>10000 *Note: ID = 18.5A<br>VDS = 120V<br>Ciss 8<br>1000 VDS = 300V<br>VDS = 480V<br>6<br>100<br>Coss<br>10 *Note: 4<br>   1. VGS = 0V<br>   2. f = 1MHz<br>1 MEN Ciss = Cgs + Cgd (Cds = shorted) 2 PCE<br>Coss = Cds + Cgd Crss<br>Crss = Cgd<br>0.1 acc 0 Se Ge<br>0.1 1 10 100 600 0 14 28 42 56 70<br>VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current[A]ID , Drain Current[A]ID<br>],<br>Ω<br> [<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>Drain-Source On-Resistance IS<br>, Gate-Source Voltage [V]<br>Capacitances [pF] GS<br>V<br>**----- End of picture text -----**<br>


©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 

www.fairchildsemi.com 

**3** 

## **Typical Performance Characteristics** (Continued) 

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       Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                            vs. Temperature<br>1.2 2.5<br>*Notes: *Notes:<br>   1. VGS = 0V    1. VGS = 10V<br>   2. ID = 10mA    2. ID = 18.5A<br>1.1 2.0<br>nn es<br>1.0 1.5<br>fort EE<br>0.9 1.0<br>HT) ETE<br>0.8 PTET 0.5 OLE<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [ [o] C] TJ, Junction Temperature [ [o] C]<br>          Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Drain Current<br>                                                                                                                     vs. Case Temperature<br>300<br>40<br>10 μ s<br>100<br>Sar 100 μ s 30 COLETTE<br>10<br>Glico GEL 1ms Rae<br>10ms<br>Operation in This Area  DC<br>20<br>1 is Limited by R DS(on)<br>eos ENE<br>*Notes:<br>0.1    1. TC = 25 [o] C 10<br>   2. TJ = 150 [o] C<br>   3. Single Pulse<br>0.01 1 =H 10 100 Po)i 1000 6 0 UEEEaiaeeueneTT<br>25 50 75 100 125 150<br>VDS, Drain-Source Voltage [V] TC, Case Temperature [ [o] C]<br>   Figure 11. Eoss vs. Drain to Source Voltage<br>20<br>16 | yyy<br>12 EEREEEEE<br>A<br>8 GEREED4e<br>4<br>Tape aaneen<br>0 yt}<br>0 120 240 360 480 600<br>VDS, Drain to Source Voltage [V]<br>, [Normalized] , [Normalized]<br>BVDSS RDS(on)<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>, Drain Current [A]<br>ID<br>J]<br>μ<br>, [<br>OSS<br>E<br>**----- End of picture text -----**<br>


©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 

www.fairchildsemi.com 

**4** 

## **Typical Characteristics** (Continued) 

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1<br>0.5<br>0.1<br>0.2<br>0.1 PDM<br>: 0.05 Go TIF. t1<br>E 0.01 0.02 LL *Notes: 1. a t2<br>2 0.01<br>r Single pulse    1. Z θ JC(t) = 0.35 [o] C/W Max.<br>   2. Duty Factor, D= t 1 /t 2<br>   3. TJM - TC = PDM * Z θ JC(t)<br>N 1E-3<br>10-5 10-4 10-3 10-2 10-1 1 10<br>t,, Rectangular Pulse Duration [sec] Rectangular Pulse Duration [sec]<br>]Thermal Response [ZJC θ<br>**----- End of picture text -----**<br>


©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 

www.fairchildsemi.com 

**5** 

**Figure 13. Gate Charge Test Circuit & Waveform** 

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IG = const.<br>F<br>Charge<br> Figure 14. Resistive Switching Test Circuit & Waveforms<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>t on t off<br>=n wa<br> Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms<br>Vos oyA EAS™=“DS L 'ASIs?<br>lo oh BVpss<br>of Ins<br>R<br>:<br>VGS TL r cr) DUT FF Voo Vop lo (t)<br>**----- End of picture text -----**<br>


©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 

www.fairchildsemi.com 

**6** 

**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------Gate Pulse Period 10V<br>( Driver )<br>ee ee<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>TT<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


©2014 Fairchild Semiconductor Corporation FCP104N60 Rev. C0 

www.fairchildsemi.com 

**7** 

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3.89<br>10.360 3.60<br>A<br>10.109 0.36 [M] B A C<br>B 8.89<br>2.860 1.41 6.477 6.86<br>2.660 1.17 6.121<br>7°<br>3°<br>12.878<br>15.215<br>12.190<br>14.757<br>15.97<br>8.787 15.89<br>8.587 5° 5°<br>3° 3°<br>1 3 3 1<br>2.755<br>13.894 1.650 3.962<br>2.555<br>12.941 1.250 [ (SEE NOTE E)] 3.505<br>1.91 0.889<br>0.787<br>0.36 [M] C B<br>0.457<br>2.640<br>0.357<br>2.440<br>5.180<br>4.980<br>**----- End of picture text -----**<br>


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5° 5°<br>3° 3°<br>4.672<br>4.472<br>**----- End of picture text -----**<br>


NOTES: 

- A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AB 

- B. ALL DIMENSIONS ARE IN MILLIMETERS. 

- C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. 

- D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 

- E.  MAX WIDTH FOR F102 DEVICE = 1.35mm. 

- F. DRAWING FILE NAME: TO220T03REV4. 

- G. FAIRCHILD SEMICONDUCTOR. 

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