FCMT360N65S3

FCMT360N65S3 

## Power MOSFET, N-Channel, SUPERFET III, Easy-Drive, 650 V, 10 A, 360 m 

## **General Description** 

SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. 

## **www.onsemi.com** 

|**VDSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|650 V|360 m @ 10 V|10 A|



Consequently, SuperFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. 

The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8x8 mm[2] ). SuperFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). 

## **Features** 

- 700 V @ TJ = 150°C 

- Typ RDS(on) = 310 m 

- Ultra Low Gate Charge (Typ. Qg = 18 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF) 

- 100% Avalanche Tested 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Computing / Display Power Supplies 

**==> picture [158 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>S1 : Driver Source<br> S2 : Power Source<br>G<br>rp<br>S1 S2<br>N-CHANNEL MOSFET<br>S2<br>es<br>S2S1G<br>Power 88<br>PQFN4 8X8 2P<br>CASE 483AP<br>**----- End of picture text -----**<br>


- Telecom / Server Power Supplies 

- Industrial Power Supplies 

- Lighting / Charger / Adapter 

**MARKING DIAGRAM** &Z&3&K FCMT 360N65S3 _ &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCMT360N65S3 = Specific Device Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2018 **February, 2019 − Rev. 0** 

**FCMT360N65S3/D** 

**FCMT360N65S3** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise specified) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C, Unless other|wise specified)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VDSS|Drain to Source Voltage||650|V|
|VGSS|Gate to Source Voltage|DC|±30|V|
|||AC (f > 1 Hz)|±30|V|
|ID|Drain Current|Continuous (TC= 25°C)|10|A|
|||Continuous (TC= 100°C)|6||
|IDM|Drain Current|Pulsed (Note 1)|25|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||40|mJ|
|IAS|Avalanche Current (Note 1)||2.1|A|
|EAR|Repetitive Avalanche Energy (Note 1)||0.83|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||20||
|PD|Power Dissipation|(TC= 25°C)|83|W|
|||Derate Above 25°C|0.67|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″|from Case for 5 s|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: pulse−width limited by maximum junction temperature. 

2. IAS = 2.1 A, RG = 25 � starting TJ = 25 ° C 

3. ISD ≤ 5 A, di/dt ≤ 200 A/ � s, VDD ≤ 400 V, starting TJ = 25 ° C 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max.|1.5|°C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max. (Note 4)|45||



4. Device on 1 in[2] pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. 

## **ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Reel Size**|**Tape Width**|**Quantity**†|
|---|---|---|---|---|---|
|FCMT360N65S3|FCMT360N65S3|Power 88|13″|13.3 mm|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**2** 

**FCMT360N65S3** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**AL CHARACTERISTICS**(TC= 25°C unl|ess otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25°C|650|||V|
|||VGS= 0 V, ID= 1 mA, TJ= 150°C|700|||V|
|�BVDSS<br>/�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 1mA, referenced to 25°C||0.68||V/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VGS= 0 V|||10|�A|
|||VDS= 520 V, TC= 125°C||0.58|||
|IGSS|Gate to Source Leakage Current|VGS=±30 V, VDS= 0 V|||±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 200�A|2.5||4.5|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 5 A||310|360|m�|
|gFS|Forward Transconductance|VDS= 20 V, ID= 5 A||6||S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz||730||pF|
|Coss|Output Capacitance|||15||pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V||173||pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V||26||pF|
|Qg(tot)|Total Gate Charge at 10 V|VDS= 400 V, VGS= 10 V,<br>ID= 5 A<br>(Note 5)||18||nC|
|Qgs|Gate to Source Gate Charge|||4.3||nC|
|Qgd|Gate to Drain “Miller” Charge|||7.6||nC|
|ESR|Equivalent Series Resistance|f = 1 MHz||1||�|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 400 V, ID= 5 A, VGS= 10 V,<br>RGEN= 4.7�<br>(Note 5)||12||ns|
|tr|Rise Time|||11||ns|
|td(off)|Turn-Off Delay Time|||34||ns|
|tf|Fall Time|||10||ns|
|**SOURCE−DRAIN DIODE CHARACTERISTICS**|||||||
|IS|Source to Drain Diode Forward VoltageMaximum Continuous Source to Drain<br>Diode Forward Current||||10|A|
|ISM|Maximum Pulsed Source to Drain Diode Forward Current||||25|A|
|VSD|Source to Drain Diode Forward Voltage|VGS= 0 V, ISD= 5 A|||1.2|V|
|trr|Reverse Recovery Time|VDD= 400 V, ISD= 5 A,<br>diF/dt = 100 A/�s||241||ns|
|Qrr|Reverse Recovery Charge|||2.4||�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. 

**www.onsemi.com** 

**3** 

**FCMT360N65S3** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**==> picture [185 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>V GS =   10.0V<br>             8.0V<br>             7.0V<br>             6.5V<br>10              6.0V<br>             5.5V<br>1<br>*Notes:<br>   1. 250  � s Pulse Test<br>  2. T C = 25 [o] C<br>0.1<br>0.2 1 10 20<br>VDS, Drain−Source Voltage[V]<br>, Drain Current[A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. On-Region Characteristics** 

**==> picture [183 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>*Notes:<br>   1. V DS  = 20V<br>   2. 250 � s Pulse Test<br>10<br>150 o C<br>25 o C<br>1<br>−55oC<br>0.1<br>2 3 4 5 6 7  8<br>VGS, Gate−Source Voltage[V]<br>, Drain Current[A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

**==> picture [455 x 389] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 100<br>*Note: TC = 25 [o] C *Notes:<br>1. V GS = 0V<br>1.0<br>10 2. 250 � s Pulse Test<br>0.8  150 [o] C<br>1<br>0.6<br>25 [o] C<br>VGS = 10V 0.1<br>0.4 VGS = 20V<br>−55 o C<br>0.01<br>0.2<br>0.0 0.001<br>0 5 10 15 20 25 30 0.0 0.5 1.0 1.5<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 3. On-Resistance Variation vs. Drain Figure 4. Body Diode Forward Voltage<br>Current and Gate Voltage Variation vs. Source Current and Temperature<br>100000 10<br>*Note: I D = 5A<br>10000<br>8<br>VDS = 130V<br>C iss<br>1000 VDS = 400V<br>6<br>100<br>Coss<br>* Note: 4<br>10    1. V GS = 0V<br>   2. f = 1MHz<br>1 C Ciss oss =  = C  Cgs ds  + C  + C gd gd  (Cds = shorted) Crss 2<br>Crss = Cgd<br>0.1 0<br>0.1 1 10 100 1000 0 5 10 15 20<br>VDS, Drain−Source Voltage [V] Qg, Total Gate Charge [nC]<br>]<br>�<br>DS(ON),<br>R<br>, Reverse Drain Current [A]<br>IS<br>Drain−Source On−Resistance [<br>, Gate−Source Voltage [V]<br>Capacitances [pF]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance Characteristics** 

**Figure 6. Gate Charge Characteristics** 

**www.onsemi.com** 

**4** 

**FCMT360N65S3** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**==> picture [195 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>*Notes:<br>   1. V GS  = 0V<br>   2. I D = 10mA<br>1.1<br>1.0<br>0.9<br>0.8<br>−50 0 50 100 150<br>TJ, Junction Temperature [ [o] C]<br>, [Normalized]<br>DSS<br>BV<br>Drain−Source Breakdown Voltage<br>**----- End of picture text -----**<br>


**Figure 7. Breakdown Voltage Variation vs. Temperature** 

**==> picture [194 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0<br>*Notes:<br>   1. V GS  = 10V<br>2.5    2. I D  = 5A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>−50 0 50 100 150<br>TJ, Junction Temperature [ [o] C]<br>, [Normalized]<br>DS(on)<br>R<br>Drain−Source On−Resistance<br>**----- End of picture text -----**<br>


**Figure 8. On-Resistance Variant vs. Temperature** 

**==> picture [190 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10 � s<br>10<br>100 � s<br>1ms<br>10ms<br>1 DC<br>Operation in This Area<br>is Limited by R DS(on)<br>*Notes:<br>0.1<br>   1. T C = 25 [o] C<br>   2. T J  = 150 [o] C<br>   3. Single Pulse<br>0.01<br>1 10 100 1000<br>VDS, Drain−Source Voltage [V]<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**==> picture [185 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>10<br>8<br>6<br>4<br>2<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature [ [o] C]<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operation Area** 

**Figure 10. Maximum Drain Current vs. Case Temperature** 

**==> picture [190 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>4<br>3<br>2<br>1<br>0<br>0 130 260 390 520 650<br>VDS, Drain to Source Voltage [V]<br>J]<br>�<br> [<br>OSS<br>E<br>**----- End of picture text -----**<br>


**Figure 11. EOSS vs. Drain to Source Voltage** 

**www.onsemi.com** 

**5** 

**FCMT360N65S3** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

**==> picture [439 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D = 0.5<br>      0.2<br>      0.1 PDM<br>0.1       0.05<br>      0.02<br>      0.01 t1<br>t2<br>0.01 NOTES:<br>Z � JC (t) = r(t) x R � JC<br>R � JC  = 1.5 [o] C/W<br>SINGLE PULSE Peak T J = PDM x Z � JC (t) + TC<br>Duty Cycle, D = t1 / t2<br>0.001<br>10−5 10−4 10−3 10−2 10−1 100 101 102<br>t, RECTANGULAR PULSE DURATION (sec)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 12. Transient Thermal Response Curve** 

**www.onsemi.com** 

**6** 

**FCMT360N65S3** 

**==> picture [365 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS<br>RL Qg<br>VGS VDS Qgs Qgd<br>DUT<br>IG = Const.<br>**----- End of picture text -----**<br>


**Figure 13. Gate Charge Test Circuit & Waveform** 

**==> picture [415 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS RL VDS 90% 90% 90%<br>VGS VDD<br>RG<br>10% 10%<br>DUT VGS<br>VGS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


**Figure 14. Resistive Switching Test Circuit & Waveforms** 

**==> picture [436 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>VDS EAS  � [1] 2 � LIAS2<br>BVDSS<br>ID<br>IAS<br>RG VDD ID(t)<br>VGS DUT VDD VDS(t)<br>t<br>p Time<br>t<br>p<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

**www.onsemi.com** 

**7** 

**FCMT360N65S3** 

**==> picture [335 x 533] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>DUT<br>VDS<br>−<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT<br>VDD<br>VGS<br>− dv/dt controlled by RG<br>− ISD controlled by pulse period<br>Gate Pulse Width<br>D  �<br>Gate Pulse Period<br>VGS 10 V<br>(Driver)<br>IFM, Body Diode Forward Current<br>ISD di/dt<br>(DUT)<br>IRM<br>Body Diode Reverse Current<br>Body Diode Recovery dv/dt<br>VDS<br>(DUT) VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

**www.onsemi.com** 

**8** 

**FCMT360N65S3** 

## **PACKAGE DIMENSIONS** 

**PQFN4 8X8, 2P** CASE 483AP ISSUE O 

**==> picture [264 x 180] intentionally omitted <==**

**==> picture [223 x 218] intentionally omitted <==**

**==> picture [169 x 335] intentionally omitted <==**

**www.onsemi.com** 

**9** 

**FCMT360N65S3** 

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

◊ 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **Europe, Middle East and Africa Technical Support:** Phone: 421 33 790 2910 

**www.onsemi.com** 

**ON Semiconductor Website** : **www.onsemi.com** 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

**FCMT360N65S3/D** 

**10**