FCH043N60

## MOSFET – N-Channel, SUPERFET II 600 V, 75 A, 43 m 0 

## FCH043N60 

## **Description** 

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. 

## **Features** 

- Typ. RDS(on) = 37 m 

- 600 V @ TJ = 150°C 

- Ultra Low Gate Charge (Typ. Qg = 163 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF) 

- 100% Avalanche Tested 

- These Devices are Pb−Free and are RoHS Compliant 

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VDS RDS(ON) MAX ID MAX<br>es 600 V 43 m ee  @ 10 V 75 A<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>**----- End of picture text -----**<br>


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N-CHANNEL MOSFET<br>**----- End of picture text -----**<br>


## **Applications** 

- Telecom / Sever Power Supplies 

- Industrial Power Supplies 

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S<br>D<br>G<br>TO−247−3LD<br>CASE 340CK<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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$Y&Z&3&K<br>FCH<br>043N60<br>$Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>FCH043N60 = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2019 − Rev. 3** 

**FCH043N60/D** 

**FCH043N60** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C unless other|wise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**FCH043N60**|**Unit**|
|VDSS|Drain to Source Voltage||600|V|
|VGSS|Gate to Source Voltage|− DC|±20|V|
|||− AC (f > 1 Hz)|±30||
|ID|Drain Current:|− Continuous (TC= 25°C)|75|A|
|||− Continuous (TC= 100°C)|47.5||
|IDM|Drain Current:|− Pulsed (Note 1)|225|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||2025|mJ|
|IAR|Avalanche Current (Note 1)||15|A|
|EAR|Repetitive Avalanche Energy (Note 1)||5.92|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||20||
|PD|Power Dissipation|(TC= 25°C)|592|W|
|||− Derate Above 25°C|4.74|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to + 150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″from Case for 5 seconds||300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: pulse−width limited by maximum junction temperature. 

2. IAS = 15 A, RG = 25 � , Starting TJ = 25 ° C. 

3. ISD ≤ 38 A, di/dt ≤ 200 A/ � s, VDD ≤ 380 V, Starting TJ = 25 ° C. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FCH043N60|FCH043N60|TO−247|Tube|N/A|N/A|30 Units|



## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**FCH043N60**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max.|0.21|°C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max.|40||



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**FCH043N60** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**AL CHARACTERISTICS**(TC= 25°C unl|ess otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|ID= 10 mA, VGS= 0 V, TJ= 25°C|600|−|−|V|
|||ID= 10 mA, VGS= 0 V, TJ= 150°C|650|−|−||
|�BVDSS<br>/�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 10 mA, Referenced to 25°C|−|0.67|−|V/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 600 V, VGS= 0 V|−|−|1|�A|
|||VDS= 480 V, VGS= 0 V, TC= 125°C|−|4.5|−||
|IGSS|Gate to Body Leakage Current|VGS=±20 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 250�A|2.5|−|3.5|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 38 A|−|37|43|m�|
|gFS|Forward Transconductance|VDS= 20 V, ID= 38 A|−|73|−|S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz|−|9194|12225|pF|
|Coss|Output Capacitance||−|353|470|pF|
|Crss|Reverse Transfer Capacitance||−|11|16|pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 480 V, VGS= 0 V|−|730|−|pF|
|Qg(tot)|Total Gate Charge at 10 V|VDS= 380 V, ID= 38 A,VGS= 10 V<br>(Note 4)|−|163|215|nC|
|Qgs|Gate to Source Gate Charge||−|35|−|nC|
|Qgd|Gate to Drain “Miller” Charge||−|39|−|nC|
|ESR|Equivalent Series Resistance|f = 1 MHz|−|1.1|−|�|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 380 V, ID= 38 A,<br>VGS= 10 V, Rg= 4.7�<br>(Note 4)|−|46|102|ns|
|tr|Turn−On Rise Time||−|36|82|ns|
|td(off)|Turn-Off Delay Time||−|162|334|ns|
|tf|Turn−Off Fall Time||−|6|−|ns|
|**DRAIN-SOURCE DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Source to Drain Diode Forward Current||−|−|75|A|
|ISM|Maximum Pulsed Drain to Source Diode Forward Current||−|−|225|A|
|VSD|Drain to Source Diode Forward Voltage|VGS= 0 V, ISD= 38 A|−|−|1.2|V|
|trr|Reverse Recovery Time|VGS= 0 V, ISD= 38 A,<br>dIF/dt = 100 A/�s|−|605|−|ns|
|Qrr|Reverse Recovery Charge||−|16|−|�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. 

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**FCH043N60** 

## **TYPICAL CHARACTERISTICS** 

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1000<br>VGS = 10.0 V<br>8.0 V<br>6.0 V<br>100 5.0 V<br>4.5 V<br>4.0 V<br>10<br>1<br>*Notes:<br>1. 250  � s Pulse Test<br>2. TC = 25 ° C<br>0.1<br>0.01 0.1 1 10 20<br>VDS , Drain−Source Voltage[V]<br>Figure 1. On−Region Characteristics<br>0.06<br>0.05<br>VGS = 10V<br>0.04<br>VGS = 20V<br>*Note: TC = 25 ° C<br>0.03<br>0 45 90 135 180 225<br>ID, Drain Current [A]<br>Figure 3. On−Resistance Variation vs. Drain<br>Current and Gate Voltage<br>100000<br>C iss<br>10000<br>1000<br>Coss<br>100 * Notes:<br>1. VGS = 0 V<br>2. f = 1 MHz<br>C rss<br>10 Ciss = Cgs + Cgd(Cds = shorted)<br>Coss = Cds + Cgd<br>Crss = Cgd<br>1<br>0.1 1 10 100 1000<br>VDS, Drain−Source Voltage [V]<br>, Drain Current[A]<br>ID<br>],<br>�<br> [<br>DS(on)<br>R<br>Drain−Source On−Resistance<br>Capacitances [pF]<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage** 

**Figure 5. Capacitance Characteristics** 

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1000<br>100<br>150oC<br>25 o C<br>10<br>−55oC<br>*Notes:<br>1. VDS = 20 V<br>2. 250  � s Pulse Test<br>1<br>2 3 4 5 6 7<br>VGS, Gate−Source Voltage[V]<br>Figure 2. Transfer Characteristics<br>1000<br>100<br> 150 [o] C<br>10<br>1<br>25 [o] C<br>0.1<br>*Notes:<br>0.01<br>1. VGS = 0 V<br>2. 250  � s Pulse Test<br>0.001<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD, Body Diode Forward Voltage [V]<br>, Drain Current[A]<br>ID<br>, Reverse Drain Current [A]<br>IS<br>**----- End of picture text -----**<br>


**Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature** 

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10<br>*Note: I D = 38A<br>VDS = 120V<br>8<br>VDS = 300V<br>6<br>VDS = 480V<br>4<br>2<br>0<br>0 40 80 120 160 200<br>Qg, Total Gate Charge [nC]<br>, Gate−Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Gate Charge Characteristics** 

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## **TYPICAL CHARACTERISTICS** 

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1.2<br>*Notes:<br>1. V GS  = 0 V<br>2. ID = 10 mA<br>1.1<br>1.0<br>0.9<br>0.8<br>−100 −50 0 50 100 150 200<br>TJ, Junction Temperature [ [o] C]<br>Figure 7. Breakdown Voltage Variation<br>vs. Temperature<br>1000<br>10 � s<br>100<br>100 � s<br>10 1ms<br>10ms<br>DC<br>1 Operation in This Area<br>is Limited by RDS(on)<br>*Notes:<br>0.1 1. TC = 25 ° C<br>2. TJ = 150 ° C<br>3. Single Pulse<br>0.01<br>1 10 100 1000<br>VDS, Drain−Source Voltage [V]<br>, [Normalized]<br>DSS<br>BV<br>Drain−Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area** 

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2.5<br>*Notes:<br>1. V GS  = 10 V<br>2. ID = 38 mA<br>2.0<br>1.5<br>1.0<br>0.5<br>−100 −50 0 50 100 150<br>TJ, Junction Temperature [ [o] C]<br>, [Normalized]<br>DS(on)<br>R<br>Drain−Source On−Resistance<br>**----- End of picture text -----**<br>


**Figure 8. On−Resistance Variation vs. Temperature** 

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75<br>50<br>25<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature [ [o] C]<br>Figure 10. Maximum Drain Current<br>vs. Case Temperature<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


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45<br>36<br>27<br>18<br>9<br>0<br>0 122 244 366 488 610<br>VDS, Drain to Source Voltage [V]<br>J ]<br>�<br>Eoss, [<br>**----- End of picture text -----**<br>


**Figure 11. Eoss vs. Drain to Source Voltage Switching Capability** 

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**FCH043N60** 

## **TYPICAL CHARACTERISTICS** 

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1<br>0.1 0.5<br>0.2 PDM<br>0.1<br>0.01 0.05 0.020.01 *Notes: t1 t2<br>Single pulse 1. Z � JC(t) = 0.21 ° C/W Max.<br>2. Duty Factor, D = t1/t2<br>3. TJM − TC = PDM * Z � JC(t)<br>0.001<br>10−5 10−4 10−3 10−2 10−1 1<br>Rectangular Pulse Duration [sec]<br>C/W](t), Thermal Response [ °<br>JC<br>�<br>Z<br>**----- End of picture text -----**<br>


**Figure 12. Transient Thermal Response Curve** 

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VGS<br>RL Qg<br>VGS VDS Qgs Qgd<br>DUT<br>IG = Const.<br>Charge<br>**----- End of picture text -----**<br>


**Figure 13. Gate Charge Test Circuit & Waveform** 

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VDS RL VDS 90% 90% 90%<br>VGS VDD<br>RG<br>10% 10%<br>DUT VGS<br>VGS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


**Figure 14. Resistive Switching Test Circuit & Waveforms** 

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L<br>VDS EAS  � [1] 2 � LIAS2<br>BVDSS<br>ID<br>IAS<br>RG VDD ID(t)<br>VGS DUT VDD VDS(t)<br>t<br>p Time<br>t<br>p<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

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**FCH043N60** 

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+<br>DUT<br>VSD<br>−<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT<br>VDD<br>VGS<br>− dv/dt controlled by RG<br>− ISD controlled by pulse period<br>Gate Pulse Width<br>D  �<br>Gate Pulse Period<br>VGS 10 V<br>(Driver)<br>IFM, Body Diode Forward Current<br>ISD di/dt<br>(DUT)<br>IRM<br>Body Diode Reverse Current<br>Body Diode Recovery dv/dt<br>(DUT)VDS VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−247−3LD SHORT LEAD<br>CASE 340CK<br>ISSUE A<br>**----- End of picture text -----**<br>


DATE 31 JAN 2019 A P1 | A E A2 @ P 0) D2 ~~1 + _~~ Q E2 ) ! S C ~~R OG )~~ D1 D B E1 2 1 2 3 ~~|~~ Oo | ~~N77~~ L1 A1 b4 L c (3X) b (2X) b2 0.25[M] B A[M] MILLIMETERS (2X)  e DIM MIN NOM MAX A ~~eee~~ A 4.58 4.70 4.82 NOTES: UNLESS OTHERWISE SPECIFIED. ~~|~~ A1 2.20 2.40 2.60 A. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD ~~a~~ A2 1.40 ~~ee~~ 1.50 ~~ee~~ 1.60 ~~ee~~ b 1.17 1.26 1.35 ©. FLASH,DRAWING ANDCONFORMS TIE BAR EXTRUSIONS.TO ASME Y14.5 - 2009. ~~eeee~~ b2 1.53 ~~ee~~ 1.65 ~~ee~~ 1.77 D. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BYL1. ~~[—~~ b4 ~~[|~~ 2.42 2.54 ~~ss~~ 2.66 c 0.51 0.61 0.71 E. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. ~~ee ee ee eee~~ **GENERIC** D 20.32 20.57 20.82 **MARKING DIAGRAM*** ~~ee ee ee ee~~ D1 13.08 ~ ~ ~~ee ee eee eee~~ AYWWZZ ~~ee~~ D2 ~~ee~~ 0.51 0.93 1.35 XXXXXXX ~~a~~ E ~~ee~~ 15.37 15.62 15.87 ~~eee~~ XXXXXXX ~~a~~ E1 ~~ee~~ 12.81 ~ ~~eee~~ ~ ~~a~~ E2 ~~ee~~ 4.96 5.08 ~~eee~~ 5.20 XXXX = Specific Device Code ~~a~~ e ~~ee~~ ~ 5.56 ~~eee~~ ~ A = Assembly Location Y = Year ~~ee~~ L ~~ee~~ 15.75 16.00 ~~**eee**~~ 16.25 WW = Work Week L1 3.69 3.81 3.93 ZZ = Assembly Lot Code P 3.51 3.58 3.65 *This information is generic. Please refer to ~~po |~~ ~~**|**~~ P1 6.60 6.80 7.00 device data sheet for actual part marking. ~~fo |~~ ~~**|**~~ Pb−Free indicator, “G” or microdot “ . ”, may ~~a~~ Q ~~ee~~ 5.34 5.46 5.58 or may not be present. Some products may not follow the Generic Marking. ~~a~~ S ~~ee~~ 5.34 5.46 eee 5.58 ~~ee~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13851G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER: 98AON13851G** 

**DESCRIPTION: TO−247−3LD SHORT LEAD** 

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