FCH029N65S3-F155

## MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 75 A, 29 m 

## FCH029N65S3 

## **Description** 

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. 

## **Features** 

- 700 V @ TJ = 150°C 

- Typ. RDS(on) = 23.7 m 

- Ultra Low Gate Charge (Typ. Qg = 201 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 1615 pF) 

- 100% Avalanche Tested 

## **www.onsemi.com** 

|**VDSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|650 V|29 m @ 10 V|75 A|



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## **POWER MOSFET** 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Telecom / Server Power Supplies 

- Industrial Power Supplies 

- UPS / Solar 

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G<br>D<br>S<br>TO−247−3LD<br>CASE 340CX<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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$Y&Z&3&K<br>FCH<br>029N65S3<br>**----- End of picture text -----**<br>


||~~vue~~|
|---|---|
|$Y|= ON Semiconductor Logo|
|&Z|= Assembly Plant Code|
|&3|= Data Code (Year & Week)|
|&K|= Lot|
|FCH029N65S3|= Specific Device Code|



## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FCH029N65S3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2020 **June, 2020 − Rev. 0** 

**FCH029N65S3** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise noted) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C, Unless other|wise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VDSS|Drain to Source Voltage||650|V|
|VGSS|Gate to Source Voltage|− DC|±30|V|
|||− AC (f > 1 Hz)|±30||
|ID|Drain Current|− Continuous (TC= 25°C)|75|A|
|||− Continuous (TC= 100°C)|50.8||
|IDM|Drain Current|− Pulsed (Note 1)|200|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||503|mJ|
|IAS|Avalanche Current (Note 2)||11.5|A|
|EAR|Repetitive Avalanche Energy (Note 1)||4.63|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||20||
|PD|Power Dissipation|(TC= 25°C)|463|W|
|||− Derate Above 25°C|3.7|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″f|rom Case for 5 seconds|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 

2. IAS = 11.5 A, RG =  25 � , starting TJ = 25 ° C. 

3. ISD ≤ 37.5 A, di/dt ≤ 200 A/ � s, VDD ≤ 400 V, starting TJ = 25 ° C. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max.|0.27|�C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max.|40||



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FCH029N65S3−F155|FCH029N65S3|TO−247 G03|Tube|N/A|N/A|30 Units|



## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unles|s otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25�C|650|−|−|V|
|||VGS= 0 V, ID= 1 mA, TJ= 150�C|700|−|−|V|
|�BVDSS/�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 1 mA, Referenced to 25�C|−|0.72|−|V/�C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VGS= 0 V|−|−|1|�A|
|||VDS= 520 V, TC= 125�C|−|6.2|−||
|IGSS|Gate to Body Leakage Current|VGS=±30 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 7.0 mA|2.5|−|4.5|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 37.5 A|−|23.7|29|m�|
|gFS|Forward Transconductance|VDS= 20 V, ID= 37.5 A|−|48|−|S|



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**FCH029N65S3** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) (continued) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unles|s otherwise noted) (continued)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz|−|6340|−|pF|
|Coss|Output Capacitance||−|166|−|pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|1615|−|pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|287|−|pF|
|Qg(tot)|Total Gate Charge at 10 V|VDS= 400 V, ID= 37.5 A, VGS= 10 V<br>(Note 4)|−|201|−|nC|
|Qgs|Gate to Source Gate Charge||−|46|−|nC|
|Qgd|Gate to Drain “Miller” Charge||−|81|−|nC|
|ESR|Equivalent Series Resistance|f = 1 MHz|−|0.85|−|�|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 400 V, ID= 37.5 A,<br>VGS= 10 V, Rg= 2�<br>(Note 4)|−|35|−|ns|
|tr|Turn-On Rise Time||−|49|−|ns|
|td(off)|Turn-Off Delay Time||−|120|−|ns|
|tf|Turn-Off Fall Time||−|29.5|−|ns|
|**SOURCE-DRAIN DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Drain to Source Diode Forward Current||−|−|75|A|
|ISM|Maximum Pulsed Drain to Source Diode Forward Current||−|−|200|A|
|VSD|Drain to Source Diode Forward Voltage|VGS= 0 V, ISD= 37.5 A|−|−|1.2|V|
|trr|Reverse Recovery Time|VDD= 400 V, ISD= 37.5 A,<br>dIF/dt = 100 A/�s|−|516|−|ns|
|Qrr|Reverse Recovery Charge||−|12.2|−|�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. 

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## **TYPICAL CHARACTERISTICS** 

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200<br>VGS = 10 V 8 V<br>100 6.5 V<br>6.0 V<br>5.5 V<br>7.0 V<br>10<br>TC = 25 ° C<br>250  � s Pulse Test<br>1<br>0.2 1 10 20<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


VDS, DRAIN−TO−SOURCE VOLTAGE (V) 

**Figure 1. On−Region Characteristics** 

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0.05<br>0.04<br>VGS = 20 V<br>0.03<br>VGS = 10 V<br>0.02<br>0.01<br>0<br>0 25 50 75 100 125 150 175 200<br>ID, DRAIN CURRENT (A)<br>) �<br>, DRAIN−TO−SOURCE ON−RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage** 

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1M<br>100K<br>10K CISS<br>1K<br>COSS<br>100<br>VGS = 0 V, f = 1 MHz<br>10 Ciss = Cgs + Cgd CRSS<br>(Cds = shorted)<br>1 Coss = Cds + Cgd<br>Crss = Cgd<br>0.1<br>0.1 1 10 100 1000<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance Characteristics** 

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200<br>100 VGS = 0 V<br>250 � s Pulse Test<br>10 TJ = 25 ° C<br>1 T J  = 150 ° C<br>0.1 TJ = −55 ° C<br>2 3 4 5 6 7<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 2. Transfer Characteristics<br>200<br>100 VGS = 0 V<br>250  � s Pulse Test<br>10<br>1<br>TJ = 150 ° C TJ = 25 ° C TJ = −55 ° C<br>0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 4. Body Diode Forward Voltage<br>Variation vs. Source Current and Temperature<br>10<br>ID = 37.5 A VDD = 130 V<br>VDD = 400 V<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250<br>QG, TOTAL GATE CHARGE (nC)<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>, GATE−TO−SOURCE VOLTAGE(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Gate Charge Characteristics** 

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## **TYPICAL CHARACTERISTICS** 

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1.2 3.0<br>VGS = 0 V V GS  = 10 V<br>ID = 10 mA 2.5 ID = 37.5 A<br>1.1<br>2.0<br>1.0 1.5<br>1.0<br>0.9<br>0.5<br>0.8 0<br>−75 −50 −25 0 25 50 75 100 125 150 175 −75 −50 −25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 7. Breakdown Voltage Variation vs. Figure 8. On−Resistance Variation vs.<br>Temperature Temperature<br>300 80<br>30  � s<br>100<br>60<br>100  � s<br>Operation in this 1 ms<br>10 area is limited<br>by RDS(on) 10 ms 40<br>DC<br>1<br>TC = 25 ° C 20<br>TJ = 150 ° C<br>Single Pulse<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150<br>VDS, DRAIN−SOURCE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>ON−RESISTANCE<br>, NORMALIZED DRAIN−TO−<br>, NORMALIZED DRAIN−SOURCE<br>DSS<br>BV SOURCE BREAKDOWN VOLTAGE<br>DS(ON)<br>R<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>**----- End of picture text -----**<br>


**Figure 9. Safe Operating Area** 

**Figure 10. Maximum Drain Current vs. Case Temperature** 

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50<br>40<br>30<br>20<br>10<br>0<br>0 130 260 390 520 650<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>J)<br>�<br>Eoss (<br>**----- End of picture text -----**<br>


**Figure 11. Eoss vs. Drain−to−Source Voltage** 

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**FCH029N65S3** 

## **TYPICAL CHARACTERISTICS** 

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2<br>Duty Cycle − Descending Order<br>1<br>0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>P DM<br>0.01 0.01 Z � JC(t) = r(t) x R � JC<br>R � JC = 0.27 ° C/W<br>Single Pulse t 1 Peak TJ = PDM x Z � JC(t) + TC<br>t 2 Duty Cycle, D = t1/t2<br>0.001<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>t, RECTANGULAR PULSE DURATION (sec)<br>R(t), NORMALIZED EFFECTIVE<br>TRANSIENT THERMAL IMPEDANCE<br>**----- End of picture text -----**<br>


**Figure 12. Transient Thermal Response Curve** 

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VGS<br>RL Qg<br>VGS VDS Qgs Qgd<br>DUT<br>IG = Const.<br>Charge<br>**----- End of picture text -----**<br>


**Figure 13. Gate Charge Test Circuit & Waveform** 

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VDS RL VDS 90% 90% 90%<br>VGS VDD<br>RG<br>10% 10%<br>DUT VGS<br>VGS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


**Figure 14. Resistive Switching Test Circuit & Waveforms** 

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L<br>VDS EAS  � [1] 2 � LIAS2<br>BVDSS<br>ID<br>IAS<br>RG VDD ID(t)<br>VGS DUT VDD VDS(t)<br>t<br>p Time<br>t<br>p<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

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+<br>DUT<br>VDS<br>−<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT<br>VDD<br>VGS<br>− dv/dt controlled by RG<br>− ISD controlled by pulse period<br>Gate Pulse Width<br>D  �<br>Gate Pulse Period<br>VGS 10 V<br>(Driver)<br>IFM, Body Diode Forward Current<br>ISD di/dt<br>(DUT)<br>IRM<br>Body Diode Reverse Current<br>Body Diode Recovery dv/dt<br>VDS<br>(DUT) VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**FCH029N65S3** 

## **PACKAGE DIMENSIONS** 

**TO−247−3LD** CASE 340CX ISSUE O 

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**FCH029N65S3** 

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