FCD600N60Z

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## **November 2013** 

## **FCD600N60Z N-Channel SuperFET[® ] II MOSFET** 

**600 V, 7.4 A, 600 m** Ω 

## **Features** 

- 650 V @ TJ = 150°C 

- Typ. RDS(on) = 510 m Ω 

- Ultra Low Gate Charge (Typ. Qg = 20 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) 

- 100% Avalanche Tested 

- ESD Improved Capacity 

- RoHS Compliant 

## **Description** 

SuperFET[® ] II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. 

## **Applications** 

- LCD / LED / PDP TV and Monitor Lighting 

- Solar Inverter 

- AC-DC Power Supply 

**==> picture [220 x 97] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>D<br>G G<br>S D-PAK<br>S<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** TC = 25[o] C unless otherwise noted. 

**==> picture [470 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter FCD600N60Z Unit<br>a<br>VDSS Drain to Source Voltage 600 V<br>es<br>- DC ±20 V<br>Pf VGSS Gate to Source Voltage O—EeEeeeeeeeLE} - AC                                                    (f > 1 Hz) ±30 } _ V<br>PO<br>ID Drain Current esee - Continuous - Continuous ((TTCC = 25 = 100 [o] C [o] C) ) 4.77.4 A<br>OO. IDM Drain Current | - Pulsed                                          uty (Note 1) 22.2 | A<br>OO. EAS Single Pulsed Avalanche Energy (Note 2) 135 mJ<br>a IAR Avalanche Current                                                                                         (Note 1) I 1.5 | A<br>ne EAR Repetitive Avalanche Energy                                                                       (Note 1) 0.89 =~ mJ |<br>dv/dt pT MOSFET dv/dt 100 V/ns<br>Peak Diode Recovery dv/dt                                                                    (Note 3) 20<br>PD Power Dissipation - Derate Above 25(TC = 25 [o] C) [o] C 0.7189 W/W [o] C<br>| OO<br>|ee TJ, TSTG | Operating and Storage Temperature Range -55 to +150 oC<br>a TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC<br>**----- End of picture text -----**<br>


## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**FCD600N60Z**|**Unit**|
|---|---|---|---|
|RθJC|Thermal Resistance, Junction to Case, Max.|1.4|oC/W|
|RθJA|Thermal Resistance, Junction to Ambient, Max.|100||



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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

**1** 

## **Package Marking and Ordering Information** 

**Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity** FCD600N60Z FCD600N60Z DPAK Tape and Reel 330 mm 16 mm 2500 units **Electrical Characteristics** TC = 25[o] C unless otherwise noted. **Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics** BVDSS Drain to Source Breakdown Voltage VVGSGS = 0 V, I = 0 V, IDD = 10 mA, T = 10 mA, TJJ = 25 = 150 ° C ° C 650600 -- -- V Δ / BV Δ TDSSJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25[o] C - 0.67 - V/[o] C Drain to Source Avalanche Breakdown BVDS Voltage VGS = 0 V, ID = 7.4 A - 700 - V IDSS Zero Gate Voltage Drain Current VVDSDS = 480 V, V = 480 V, TC GS = 125= 0 V[o] C -- -- 205 μ A ~~Sse~~ IGSS Gate-Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 uA **On Characteristics** VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μ A 2.5 - 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3.7 A - 0.51 0.6 Ω ~~————————~~ gFS Forward Transconductance VDS = 20 V, ID = 3.7 A - 6.7 - S **Dynamic Characteristics** CCiossss Input CapacitanceOutput Capacitance Vf = 1 MHzDS = 25 V, VGS = 0 V, -- 630840 1120840 pFpF Crss Reverse Transfer Capacitance - 30 45 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 16.5 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 74 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 3.7 A, - 20 26 nC Qgs Gate to Source Gate Charge VGS = 10 V - 3.4 - nC Qgd Gate to Drain “Miller” Charge (Note 4) - 7.5 - nC ~~a=~~ ESR Equivalent Series Resistance f = 1 MHz ~~—aeeae~~ - 2.89 - Ω **Switching Characteristics** td(on) Turn-On Delay Time - 13 36 ns tr Turn-On Rise Time VDD = 380 V, ID = 3.7 A, - 7 24 ns td(off) Turn-Off Delay Time VGS = 10 V, RG = 4.7 Ω - 39 88 ns ~~=O~~ tf Turn-Off Fall Time (Note 4) - 9 28 ns **Drain-Source Diode Characteristics** IS Maximum Continuous Drain to Source Diode Forward Current - - 7.4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22.2 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 3.7 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 3.7 A, - 200 - ns ~~SEE~~ Qrr Reverse Recovery Charge dIF/dt = 100 A/ μ s - 2.3 - μ C **Notes:** 1. Repetitive rating: pulse-width limited by maximum junction temperature. 

2. IAS = 1.5 A, VDD = 50 V, RG = 25 Ω , starting TJ = 25 ° C. 

3. ISD ≤ 3.7 A, di/dt ≤ 200 A/ μ s, VDD ≤ BVDSS, starting TJ = 25 ° C. 

4. Essentially independent of operating temperature typical characteristics. 

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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

**2** 

## **Typical Performance Characteristics** 

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Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>20 50<br>VGS = 10.0V       *Notes:<br>            8.0V    1. VDS = 20V<br>10             7.0V    2. 250 μ s Pulse Test<br>            6.0V<br>            5.5V 10<br>            5.0V<br>            4.5V<br>25 o C<br>150oC -55oC<br>1<br>1 *Notes:<br>   1. 250 μ s Pulse Test<br>   2. TC = 25 [o] C<br>0.4 Joer 0.2 VALaT<br>0.2 1 10 20 2 3 4 5 6 7 8<br>VDSVDS, Drain to Source Voltage [V], Drain-Source Voltage[V] VGSV, Gate to GS, Gate-Source Voltaage [V][V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>1.2 50<br>1.0<br>Ie Be<br>0.8 10 apna<br>V GS  = 10V  150 [o] C<br>25 [o] C<br>0.6<br>VGS = 20V<br>0.4<br>*Notes:<br>1. VGS = 0V<br>*Note: TC = 25 [o] C 2. 250 μ s Pulse Test<br>0.2 Peep 1 il,<br>0 4 8 12 16 20 0.4 0.6 0.8 1.0 1.2 1.4<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>10000 10<br>VDS = 120V<br>V DS  = 300V<br>C iss 8 V DS = 480V<br>1000<br>6<br>100<br>* Note: Coss 4<br>10    1. VGS = 0V<br>   2. f = 1MHz<br>Ciss = Cgs + Cgd (Cds = shorted) 2<br>1 C Coss rss = C  = C gd ds + Cgd Crss *Note: ID = 3.7A<br>0.5 eg 0 SERS<br>0.1 1 10 100 600 0 5 10 15 20 25<br>VVDSDS, Drain to Source Voltage [V], Drain-Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current[A] , Drain Current[A]<br>ID ID<br>],<br>Ω<br> [<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>Drain to Source On-Resistance IS<br>Capacitances [pF]<br>, Gate to Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

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## **Typical Performance Characteristics** (Continued) 

**==> picture [455 x 599] intentionally omitted <==**

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       Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                            vs. Temperature<br>1.15 3.0<br>1.10 2.5 Pt Py<br>1.05 2.0<br>pt [TTA]<br>1.00 1.5<br>faleeee7 Gene<br>0.95 1.0<br>[alee 4eeene<br>*Notes: *Notes:<br>0.90 0.5<br>   1. VGS = 0V    1. VGS = 10V<br>   2. I D  = 250 μ A    2. I D  = 3.7A<br>0.85 0.0 pTfaleeeee<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [ [o] C] TJ, Junction Temperature [ [o] C]<br>        Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Drain Current<br>                                                                                                                  vs. Case Temperature<br>1050 pa} 86 PE<br>PT RAN 10 μ s a<br>100 μ s<br>4<br>1ms<br>1 Operation in This Area<br>* Notes:is Limited by R DS(on) 10ms<br>DC 2<br>   1. T C  = 25 [o] C<br>   2. TJ = 150 [o] C<br>0.1 fe    3. Single Pulse IN) 0 ECE<br>0.1 1 10 100 1000 25 50 75 100 125 150<br>VDSV, Drain to Source Voltage [V]DS, Drain-Source Voltage [V] TC, Case Temperature [ [o] C]<br>        Figure 11. Eoss vs. Drain to Source Voltage<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 600<br>VDS, Drain to Source Voltage [V]<br>, [Normalized] , [Normalized]<br>BVDSS DS(on)<br>R<br>Drain to Source On-Resistance<br>Drain to Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>, Drain Current [A]<br>ID<br>J]<br>μ<br>, [<br>OSS<br>E<br>**----- End of picture text -----**<br>


**Figure 11. Eoss vs. Drain to Source Voltage** 

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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

**4** 

## **Typical Performance Characteristics** (Continued) 

**Figure 12. Transient Thermal Response Curve** 

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2<br>1<br>0.5<br>PDM<br>0.2<br>t1<br>t2<br>0.1 *Notes:<br>0.05<br>   1. Z θ JC (t) = 1.4 [o] C/W Max.<br>0.02<br>0.01    2. Duty Factor, D= t1/t2<br>Single pulse    3. TJM - TC = PDM * Z θ JC(t)<br>0.1 A<br>10-5 10-4 10-3 10-2 10-1 100<br>t1, Rectangular Pulse Duration [sec]<br>oC/W(t), Thermal Response []<br>ZJC θ<br>**----- End of picture text -----**<br>


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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

**5** 

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IG = const.<br>F<br>Charge<br> Figure 13. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>=n wa t on 4S t off<br> Figure 14. Resistive Switching Test Circuit & Waveforms<br>Vos oy5 EASa“a Las?LIAS<br>lo oy} BVpss<br>of las<br>>in (ad) =F Von Ip (t)<br>VGS TL DUT Vop<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ff}<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>eerie<br>Body Diode<br>Forward Voltage Drop<br> Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms<br>**----- End of picture text -----**<br>


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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

**7** 

## **Mechanical Dimensions** 

## **Figure 17. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003_ 

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©2012 Fairchild Semiconductor Corporation FCD600N60Z Rev. C3 

**8** 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

|AccuPower™<br>AX-CAP®*<br>BitSiC™<br>Build it Now™<br>CorePLUS™<br>CorePOWER™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>DEUXPEED®<br>Dual Cool™<br>EcoSPARK®<br>EfficentMax™<br>ESBC™<br>Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series™<br>FACT®<br>FAST®<br>FastvCore™<br>FETBench™<br>FPS™<br>®|F-PFS™<br>FRFET®<br>Global Power ResourceSM<br>GreenBridge™<br>Green FPS™<br>Green FPS™ e-Series™<br>G_max_™<br>GTO™<br>IntelliMAX™<br>ISOPLANAR™<br>Marking Small Speakers Sound Louder<br>and Better™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MicroPak2™<br>MillerDrive™<br>MotionMax™<br>mWSaver®<br>OptoHiT™<br>OPTOLOGIC®<br>OPTOPLANAR®|PowerTrench®<br>PowerXS™<br>Programmable Active Droop™<br>QFET®<br>QS™<br>Quiet Series™<br>RapidConfigure™<br>Saving our world, 1mW/W/kW at a time™<br>SignalWise™<br>SmartMax™<br>SMART START™<br>Solutions for Your Success™<br>SPM®<br>STEALTH™<br>SuperFET®<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SupreMOS®<br>SyncFET™<br>™<br>tm®|Sync-Lock™<br>®*<br>TinyBoost®<br>TinyBuck®<br>TinyCalc™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>TranSiC™<br>TriFault Detect™<br>TRUECURRENT®*<br>μSerDes™<br>UHC®<br>Ultra FRFET™<br>UniFET™<br>VCX™<br>VisualMax™<br>VoltagePlus™<br>XS™<br>E SYSTEM<br>GENERAL<br>WZ...|
|---|---|---|---|



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As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. 

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
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|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

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