FCD360N65S3R0

Power MOSFET, N Channel, 650 V, 10 A, 0.36 ohm, TO-252 (DPAK), Surface Mount

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Manufacturer: ONSEMI
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Pow
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: SUPERFET III
Qualification: -
Power Dissipation: 83W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-252 (DPAK)
Drain Source Voltage Vds: 650V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 10A
Drain Source On State Resistance: 0.36ohm
Gate Source Threshold Voltage Max: 4.5V

Delivery and price
Units per pack	1000
Price	0.879 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026