FCD360N65S3R0

FCD360N65S3R0 

## MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m Q 

## **Description** 

SUPERFET III MOSFET is ON Semiconductor’s brand−new high - voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. 

Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. **Features** • 700 V @ TJ = 150 C • Typ. RDS(on) = 310 m • Ultra Low Gate Charge (Typ. Qg = 18 nC) ; 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF) 

- 100% Avalanche Tested 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Computing / Display Power Supplies 

- Telecom / Server Power Supplies 

- Industrial Power Supplies 

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VDSS RDS(ON) MAX ID MAX<br>ee 650 V 360 m ee  @ 10 V 10 A ee<br>D<br>G<br>:<br>S<br>D<br>G<br>S<br>D−PAK<br>TO−252<br>CASE 369AS<br>**----- End of picture text -----**<br>


- Lighting / Charger / Adapter 

## **MARKING DIAGRAM** 

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$Y&Z&3&K<br>FCD360<br>N65S3R0<br>$Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = Data Code (Year & Week)<br>&K = Lot<br>FCD360N65S3R0 = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FCD360N65S3R0/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **August, 2019 − Rev. 5** 

**FCD360N65S3R0** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise noted) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C, Unless othe|rwise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VDSS|Drain to Source Voltage||650|V|
|VGSS|Gate to Source Voltage|− DC|±30|V|
|||− AC (f > 1 Hz)|±30|V|
|ID|Drain Current:|− Continuous (TC= 25°C)|10|A|
|||− Continuous (TC= 100°C)|6||
|IDM|Drain Current:|− Pulsed (Note 1)|25|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||40|mJ|
|IAS|Avalanche Current (Note 2)||2.1|A|
|EAR|Repetitive Avalanche Energy (Note 1)||0.83|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||20||
|PD|Power Dissipation|(TC= 25°C)|83|W|
|||Derate Above 25°C|0.67|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″from Case for 5 seconds||300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: pulse−width limited by maximum junction temperature. 

2. IAS = 2.1 A, RG = 25 � , starting TJ = 25 � C. 

3. ISD ≤ 5 A, di/dt ≤ 200 A/ � S, VDD ≤ 400 V, starting TJ = 25 � C. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max.|1.5|�C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max. Note 4)|52||



4. Device on 1 in[2] pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**†|
|---|---|---|---|---|---|---|
|FCD360N65S3R0|FCD360N65S3R0|TO−252|Tape and Reel|330 mm|16 mm|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**2** 

**FCD360N65S3R0** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unl|ess otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25�C|650|−|−|V|
|||VGS= 0 V, ID= 1 mA, TJ= 150�C|700|−|−|V|
|�BVDSS/�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 1 mA, Referenced to 25�C|−|0.68|−|V/�C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VGS= 0 V|−|−|1|�A|
|||VDS= 520 V, TC= 125�C|−|0.58|−||
|IGSS|Gate to Body Leakage Current|VGS=±30 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 0.2 mA|2.5|−|4.5|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 5 A|−|310|360|m�|
|gFS|Forward Transconductance|VDS= 20 V, ID= 5 A|−|6|−|S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz|−|730|−|pF|
|Coss|Output Capacitance||−|15|−|pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|173|−|pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|26|−|pF|
|Qg(tot)|Total Gate Charge at 10V|VDS= 400 V, ID= 5 A, VGS= 10 V<br>(Note 5)|−|18|−|nC|
|Qgs|Gate to Source Gate Charge||−|4.3|−|nC|
|Qgd|Gate to Drain “Miller” Charge||−|7.6|−|nC|
|ESR|Equivalent Series Resistance|f = 1 MHz|−|1|−|�|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 400 V, ID= 5 A,<br>VGS= 10 V, Rg= 4.7�<br>(Note 5)|−|12|−|ns|
|tr|Turn-On Rise Time||−|11|−|ns|
|td(off)|Turn-Off Delay Time||−|34|−|ns|
|tf|Turn-Off Fall Time||−|10|−|ns|
|**SOURCE-DRAIN DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Source to Drain|Diode Forward Current|−|−|10|A|
|ISM|Maximum Pulsed Source to Drain Diode Forward Current||−|−|25|A|
|VSD|Source to Drain Diode Forward<br>Voltage|VGS= 0 V, ISD= 5 A|−|−|1.2|V|
|trr|Reverse Recovery Time|VGS= 0 V, ISD= 5 A,<br>dIF/dt = 100 A/�s|−|241|−|ns|
|Qrr|Reverse Recovery Charge||−|2.4|−|�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. 

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**3** 

**FCD360N65S3R0** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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50 50<br>V GS =   10.0V *Notes:<br>             8.0V    1. V DS  = 20V<br>             7.0V    2. 250 � s Pulse Test<br>             6.5V<br>10              6.0V 10<br>             5.5V<br>150 o C<br>25 o C<br>1 1<br>−55oC<br>*Notes:<br>   1. 250 � s Pulse Test<br>   2. T C = 25 [o] C<br>0.1 0.1<br>0.2 1 10 20 2 3 4 5 6 7 8 9<br>VDS, Drain−Source Voltage[V] VGS, Gate−Source Voltage[V]<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.6 100<br>*Note: TC = 25 [o] C *Notes:<br>1. V GS = 0V<br>0.5 10 2. 250 � s Pulse Test<br> 150 [o] C<br>0.4 1<br>VGS = 10V<br>25 [o] C<br>VGS = 20V<br>0.3 0.1<br>−55 o C<br>0.2 0.01<br>0.1 0.001<br>0 5 10 15 20 25 0.0 0.5 1.0 1.5<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 3. On−Resistance Variation vs Figure 4. Body Diode Forward Voltage Variation<br>Drain Current and Gate Voltage vs. Source Current and Temperature<br>100000 10<br>*Note: ID = 5A<br>10000<br>8<br>VDS = 130V<br>C iss<br>1000 VDS = 400V<br>6<br>100<br>Coss<br>* Note: 4<br>10    1. V GS = 0V<br>   2. f = 1MHz<br>1 C Ciss oss =  = C  Cgs ds  + C  + C gd gd  (Cds = shorted) Crss 2<br>Crss = Cgd<br>0.1 0<br>0.1 1 10 100 1000 0 5 10 15 20<br>VDS, Drain−Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current[A] , Drain Current[A]<br>ID ID<br>] �<br>DS(ON),<br>R<br>, Reverse Drain Current [A]<br>IS<br>Drain−Source On−Resistance [<br>, Gate−Source Voltage [V]<br>Capacitances [pF]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature** 

**Figure 6. Gate Charge Characteristics** 

**Figure 5. Capacitance Characteristics** 

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**4** 

**FCD360N65S3R0** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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1.2<br>*Notes:<br>   1. V GS  = 0V<br>   2. I D = 10mA<br>1.1<br>1.0<br>0.9<br>0.8<br>−50 0 50 100 150<br>TJ, Junction Temperature [ [o] C]<br>Figure 7. Breakdown Voltage Variation<br>vs. Temperature<br>100<br>10 � s<br>10<br>100 � s<br>1ms<br>10ms<br>1<br>DC<br>Operation in This Area<br>is Limited by R DS(on)<br>*Notes:<br>0.1<br>   1. T C = 25 [o] C<br>   2. T J  = 150 [o] C<br>   3. Single Pulse<br>0.01<br>1 10 100 1000<br>VDS, Drain−Source Voltage [V]<br>Figure 9. Maximum Safe Operating Area<br>5<br>4<br>3<br>2<br>1<br>0<br>0 130 260 390 520 650<br>VDS, Drain to Source Voltage [V]<br>, [Normalized]<br>DSS<br>BV<br>Drain−Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>J]<br>�<br> [<br>OSS<br>E<br>**----- End of picture text -----**<br>


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3.0<br>*Notes:<br>   1. V GS  = 10V<br>2.5    2. I D  = 5A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>−50 0 50 100 150<br>TJ, Junction Temperature [ [o] C]<br>Figure 8. On−Resistance Variation<br>vs. Temperature<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature [ [o] C]<br>Figure 10. Maximum Drain Current<br>vs. Case Temperature<br>, [Normalized]<br>DS(on)<br>R<br>Drain−Source On−Resistance<br>, Drain Current [A]<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Eoss vs. Drain to Source Voltage** 

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**5** 

**FCD360N65S3R0** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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2<br>1 DUTY CYCLEDUTY CYCLE−−DESCENDING ORDERDESCENDING ORDER<br>D = 0.5<br>      0.2 PDM<br>0.1       0.1<br>      0.05<br>      0.02<br>      0.01 tt1<br>tt 2 2<br>0.01 NOTES:<br>Z � JC (t) = r (t) x R � JC<br>R � JC = 1.5  � C/W<br>SINGLE PULSE Peak TJ = PDM x Z � JC (t) + TC<br>Duty Cycle, D = t1 / t2<br>0.001<br>10−5 10−4 10 −3 10 −2 10 −1 10 0 10 1 10 2<br>t, RECTANGULAR PULSE DURATION (sec)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 12. Transient Thermal Response Curve** 

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**FCD360N65S3R0** 

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VGS<br>RL Qg<br>VGS VDS Qgs Qgd<br>DUT<br>IG = Const.<br>Charge<br>**----- End of picture text -----**<br>


**Figure 13. Gate Charge Test Circuit & Waveform** 

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VDS RL VDS 90% 90% 90%<br>VGS VDD<br>RG<br>10% 10%<br>DUT VGS<br>VGS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


**Figure 14. Resistive Switching Test Circuit & Waveforms** 

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L<br>VDS EAS  � [1] 2 � LIAS2<br>BVDSS<br>ID<br>IAS<br>RG VDD ID(t)<br>VGS DUT VDD VDS(t)<br>t<br>p Time<br>t<br>p<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

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**7** 

**FCD360N65S3R0** 

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+<br>DUT<br>VSD<br>−<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT<br>VDD<br>VGS<br>− dv/dt controlled by RG<br>− ISD controlled by pulse period<br>Gate Pulse Width<br>D  �<br>Gate Pulse Period<br>VGS 10 V<br>(Driver)<br>IFM, Body Diode Forward Current<br>ISD di/dt<br>(DUT)<br>IRM<br>Body Diode Reverse Current<br>Body Diode Recovery dv/dt<br>(DUT)VDS VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**8** 

## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DPAK3 (TO−252 3 LD)<br>CASE 369AS<br>ISSUE O<br>**----- End of picture text -----**<br>


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DATE 30 SEP 2016<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER:** 

## **DESCRIPTION:** 

## **98AON13810G** 

## **DPAK3 (TO−252 3 LD)** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **PAGE 1 OF 1** 

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