FCB36N60NTM

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## **FCB36N60N N-Channel SupreMOS[®] MOSFET** 

**600 V, 36 A, 90 m** Ω 

## **Features** 

- RDS(on) = 81 m Ω (Typ.) @ VGS = 10 V, ID = 18 A 

- Ultra Low Gate Charge (Typ. Qg = 86 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

## **Applications** 

## **Description** 

The SupreMOS[® ] MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. 

- Solar Inverter 

- AC-DC Power Supply 

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D<br>D<br>G<br>G<br>S D [2] -PAK<br>S<br>MOSFET Maximum Ratings TC = 25 [o] C unless otherwise noted.<br>A. Symbol Parameter FCB36N60N Unit<br>I VDSS Drain to Source Voltage lO 600 V<br>A. =Car]<br>I VGSS Gate to Source Voltage ±30 V<br>ID Drain Current eeee - Continuous - Continuous ((TTCC = 25 = 100 [o] C [o] C) ) 22.736 A<br>eS IDM Drain Current - Pulsed                                             (Note 1) 108 A<br>ee EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ<br>ee IAR Avalanche Current                                                                                     (Note 1) 12 A<br>O EAR O4 Repetitive Avalanche Energy (Note 1) 3.12 mJ<br>MOSFET dv/dt  100 V/ns<br>dv/dt<br>—————————a Peak Diode Recovery dv/dt                                                                           (Note 3) 20 | V/ns |<br>PD Power Dissipation [|_| (- Derate Above 25TC = 25 [o] C) [o] C 3122.6 W/W [o] C<br>| TJ, TSTG Operatin SS g and Storage Temperature Range i -55 to +150 7113) oC<br>ee TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds a 300 oC<br>Thermal Characteristics<br>Symbol Parameter FCB36N60N Unit<br>R θ JC Thermal Resistance, Junction to Case ,  Max.             0.4<br>R θ JA Thermal Resistance, Junction to Ambient (1 in [2]  Pad of 2-oz Copper), Max. 40 oC/W<br>R θ JA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5<br>**----- End of picture text -----**<br>


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©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C1 

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## **Package Marking and Ordering Information** 

**Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity** FCB36N60N FCB36N60N D[2] -PAK Tape and Reel 330 mm 24 mm 800 units **Electrical Characteristics** TC = 25[o] C unless otherwise noted. **Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics** BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V, TC = 25[o] C 600 - - V / Δ BV Δ TDSSJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25[o] C - 0.7 - V/[o] C IDSS Zero Gate Voltage Drain Current VVDSDS = 480 V, V = 480 V, VGS GS = 0 V= 0 V, TC = 125[o] C -- -- 10010 μ A ~~—————ae~~ IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA **On Characteristics** VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μ A 2.0 - 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 18 A - 81 90 m Ω ~~———————~~ gFS Forward Transconductance VDS = 40 V, ID = 18 A - 41 - S **Dynamic Characteristics** Ciss Input Capacitance - 3595 4785 pF Coss Output Capacitance Vf = 1 MHzDS = 100 V, VGS = 0 V, - 149 200 pF Crss Reverse Transfer Capacitance - 4 6 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 80 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 380 V, VGS = 0 V - 361 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 18 A, - 86 112 nC Qgs Gate to Source Gate Charge VGS = 10 V - 15.4 - nC Qgd Gate to Drain “Miller” Charge (Note 4) - 26.4 - nC ~~a=e~~ ESR Equivalent Series Resistance (G-S) f = 1 MHz - 1 - Ω **Switching Characteristics** td(on) Turn-On Delay Time - 23 56 ns tr Turn-On Rise Time VDD = 380 V, ID = 18 A, - 22 54 ns td(off) Turn-Off Delay Time VGS = 10 V, RG = 4.7 Ω - 94 198 ns ~~EE~~ tf Turn-Off Fall Time (Note 4) - 4 18 ns ~~SS~~ **Drain-Source Diode Characteristics** ~~— ee~~ IS Maximum Continuous Drain to Source Diode Forward Current - - 36 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 18 A, - 574 - ns Qrr Reverse Recovery Charge dIF/dt = 100 A/ μ s - 10 - μ C **Notes:** ~~———~~ 1. Repetitive rating: pulse-width limited by maximum junction temperature. ~~Se~~ 

2. IAS = 12 A, RG = 25 Ω , starting TJ = 25 ° C. 3. ISD ≤ 36 A, di/dt ≤ 200 A/ μ s, VDD = 380 V, starting TJ = 25 ° C. 

4. Essentially independent of operating temperature typical characteristics. 

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©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C1 

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## **Typical Performance Characteristics** 

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Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>100 1000<br>V GS  = 15.0 V<br>           10.0 V<br>10 AS].              8.0 V 100 (OOo<br>             7.0 V o<br>150 C<br>             6.5 V<br>             6.0 V<br>             5.5 V 25 o C<br>             5.0 V 10<br>1 -55oC<br>*Notes:<br>   1. 250 μ s Pulse Test 1 *Notes:<br>0.1    2. TC = 25 [o] C 0.3    1. V   2. 250DS μ  = 20Vs Pulse Test<br>0.1 1 10 100 2 3 4 5 6 7<br>VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>0.3 300<br>100<br>0.2 PTet}| = HELL  150 [o] C<br>25 [o] C<br>VGS = 10V 10<br>0.1<br>coo) La<br>VGS = 20V<br>*Notes:<br>1. V GS  = 0V<br>0 The] *Notes: TC = 25 [o] C = 1 iAA 2. 250 μ s Pulse Test<br>0 20 40 60 80 100 0.4 0.6 0.8 1.0 1.2<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>100000 10<br>V DS  = 120V<br>10000 8 VDS = 300V<br>Ciss VDS = 480V<br>pee) LL Se<br>1000 6<br>C oss<br>100 *Notes: 4<br>   1. VGS = 0V<br>   2. f = 1MHz<br>10 Ciss = Cgs + Cgd ( Cds = shorted ) Crss 2<br>Coss = Cds + Cgd<br>Crss = Cgd *Notes: ID = 18A<br>1 pee} 0 Ae<br>0.1 1 10 100 600 0 25 50 75 100<br>VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current[A]ID , Drain Current[A]ID<br>] ,<br>Ω<br>[<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>Drain-Source On-Resistance IS<br>, Gate-Source Voltage [V]<br>Capacitances [pF]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Body Diode Forward Voltage Variation vs. Source Current** 

**Figure 6. Gate Charge Characteristics** 

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©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C1 

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## **Typical Performance Characteristics** (Continued) 

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       Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                            vs. Temperature<br>1.2 3.0<br>2.5<br>1.1<br>2.0<br>1.0 1.5<br>1.0<br>0.9<br>*Notes: 0.5 *Notes:<br>   1. VGS = 0V    1. VGS = 10V<br>   2. ID = 1mA    2. ID = 18A<br>0.8 0.0<br>-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160<br>TJ, Junction Temperature  [ [o] C ] TJ, Junction Temperature  [ [o] C ]<br>        Figure 9. Maximum Safe Operating Area                     Figure 10. Maximum Drain Current<br>                    vs. Case Temperature<br>1000 40<br>100<br>eee 20 μ s | 30 CS<br>100 μ s<br>1ms<br>10 10ms<br>DC<br>aoe 20 A<br>1 Operation in This Area<br>is Limited by R DS(on)<br>*Notes:<br>10<br>0.1 i    1. TC = 25 [o] C SERS<br>   2. TJ = 150 [o] C<br>   3. Single Pulse<br>0.01 eg 0 EEN<br>0.1 1 10 100 1000 25 50 75 100 125 150<br>VDS, Drain-Source Voltage [V] TC, Case Temperature  [ [o] C ]<br>Figure 11. Transient Thermal Response Curve<br>1<br>0.5<br>PDM<br>0.1 ij 0.2 t1<br>0.1 t2<br>*Notes:<br>0.05<br>   1. Z θ JC (t) = 0.4 [o] C/W Max.<br>0.02<br>0.01    2. Duty Factor, D= t1/t2<br>Single pulse    3. TJM - TC = PDM * Z θ JC(t)<br>0.01<br>10-5 10-4 10-3 10-2 10-1 1 10 102 103<br>  tRectangular Pulse Duration [sec]1, Rectangular Pulse Duration [sec]<br>, [Normalized] , [Normalized]<br>DSS DS(on)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>, Drain Current [A]<br>ID<br>] C/W]<br>oZJC θ<br>[<br>(t), Thermal Response [<br>ZThermal Response JC θ<br>**----- End of picture text -----**<br>


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©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C1 

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IG = const.<br>F<br>Charge<br> Figure 12. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>=n wa t on 4S t off<br> Figure 13. Resistive Switching Test Circuit & Waveforms<br>Vos oy5 EASa“a Las?LIAS<br>lo oy} BVpss<br>of las<br>>in (ad) =F Von Ip (t)<br>VGS TL DUT Vop<br>**----- End of picture text -----**<br>


**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms** 

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©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C1 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ff}<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>eerie<br>Body Diode<br>Forward Voltage Drop<br> Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms<br>**----- End of picture text -----**<br>


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©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C1 

**6** 

## **Mechanical Dimensions** 

## **Figure 16. TO263 (D[2] PAK), Molded, 2-Lead, Surface Mount** 

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_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-0R2_ 

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©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C1 

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|AccuPower™<br>AX-CAP®*<br>BitSiC™<br>Build it Now™<br>CorePLUS™<br>CorePOWER™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>DEUXPEED®<br>Dual Cool™<br>EcoSPARK®<br>EfficentMax™<br>ESBC™<br>Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series™<br>FACT®<br>FAST®<br>FastvCore™<br>FETBench™<br>FPS™<br>®|F-PFS™<br>FRFET®<br>Global Power ResourceSM<br>GreenBridge™<br>Green FPS™<br>Green FPS™ e-Series™<br>G_max_™<br>GTO™<br>IntelliMAX™<br>ISOPLANAR™<br>Marking Small Speakers Sound Louder<br>and Better™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MicroPak2™<br>MillerDrive™<br>MotionMax™<br>mWSaver®<br>OptoHiT™<br>OPTOLOGIC®<br>OPTOPLANAR®|PowerTrench®<br>PowerXS™<br>Programmable Active Droop™<br>QFET®<br>QS™<br>Quiet Series™<br>RapidConfigure™<br>Saving our world, 1mW/W/kW at a time™<br>SignalWise™<br>SmartMax™<br>SMART START™<br>Solutions for Your Success™<br>SPM®<br>STEALTH™<br>SuperFET®<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SupreMOS®<br>SyncFET™<br>™<br>tm®|Sync-Lock™<br>®*<br>TinyBoost®<br>TinyBuck®<br>TinyCalc™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>TranSiC™<br>TriFault Detect™<br>TRUECURRENT®*<br>μSerDes™<br>UHC®<br>Ultra FRFET™<br>UniFET™<br>VCX™<br>VisualMax™<br>VoltagePlus™<br>XS™<br>E SYSTEM<br>GENERAL<br>WZ...|
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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
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Rev. I66 

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