FCB260N65S3

FCB260N65S3 

## MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 m 

## **Description** 

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SUPERFET III MOSFET is ON Semiconductor’s brand−new high **www.onsemi.comonsemi.com** voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gatecharge performance. This advance technology is tailored to minimize **VDSS RDS(ON) MAX ID MAX** conduction loss, provide superior switching performance, and 650 V 260 m @ 10 V 12 A withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various power system miniaturization and higher D efficiency. **Features** • 700 V @ TJ = 150°C G • Typ. RDS(on) = 222 m • Ultra Low Gate Charge (Typ. Q ~~8~~ g = 24 nC) S 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF) 

**POWER MOSFET** • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant D **Applications** • Telecom / Server Power Supplies G S • Industrial Power Supplies **D[2] −PAK** • **CASE 418AJ** 

- UPS / Solar 

**MARKING DIAGRAM** 

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|$Y<br>~~:~~|~~:~~|= ON Semiconductor Logo<br>~~:~~||||||||
|&Z||= Assembly Plant Code||||||||
|&3||= Data Code (Year & Week)|||||||= Data Code (Year & Week)|
|&K||= Lot||||||||
|FCB260N65S3||= Specific Device Code||||||= Specific Device Code||



## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FCB260N65S3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **August, 2019 − Rev. 4** 

**FCB260N65S3** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise specified) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C, Unless other|wise specified)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VDSS|Drain to Source Voltage||650|V|
|VGSS|Gate to Source Voltage|DC|±30|V|
|||AC (f > 1 Hz)|±30|V|
|ID|Drain Current|Continuous (TC= 25°C)|12|A|
|||Continuous (TC= 100°C)|7.6||
|IDM|Drain Current|Pulsed (Note 1)|30|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||57|mJ|
|IAS|Avalanche Current (Note 1)||2.3|A|
|EAR|Repetitive Avalanche Energy (Note 1)||0.9|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||20||
|PD|Power Dissipation|(TC= 25°C)|90|W|
|||Derate Above 25°C|0.72|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″|from Case for 5 s|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: pulse-width limited by maximum junction temperature. 

2. IAS = 2.3 A, RG = 25 � , starting TJ = 25 ° C. 

3. ISD ≤ 6 A, di/dt ≤ 200 A/ � s, VDD ≤ 400 V, starting TJ = 25 ° C. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max.|1.39|�C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max. (Note 4)|40||



4. Device on 1 in[2] pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Reel Size**|**Tape Width**|**Shipping**†|
|---|---|---|---|---|---|
|FCB260N65S3|FCB260N65S3|D2−PAK|330 mm|24 mm|800 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**2** 

**FCB260N65S3** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unless|otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25�C|650|||V|
|||VGS= 0 V, ID= 1 mA, TJ= 150�C|700|||V|
|�BVDSS/�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 1 mA, Referenced to 25�C||0.66||V/�C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VGS= 0 V|||1|�A|
|||VDS= 520 V, TC= 125�C||0.77|||
|IGSS|Gate to Body Leakage Current|VGS=±30 V, VDS= 0 V|||±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 0.29 mA|2.5||4.5|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 6 A||222|260|m�|
|gFS|Forward Transconductance|VDS= 20 V, ID= 6 A||7.4||S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz||1010||pF|
|Coss|Output Capacitance|||25||pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V||248||pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V||33||pF|
|Qg(tot)|Total Gate Charge at 10 V|VDS= 400 V, ID= 6 A, VGS= 10 V<br>(Note 5)||24||nC|
|Qgs|Gate to Source Gate Charge|||6.1||nC|
|Qgd|Gate to Drain “Miller” Charge|||9.7||nC|
|ESR|Equivalent Series Resistance|f = 1 MHz||8.7||�|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 400 V, ID= 6 A,<br>VGS= 10 V, Rg= 4.7�<br>(Note 5)||18||ns|
|tr|Turn-On Rise Time|||18||ns|
|td(off)|Turn-Off Delay Time|||49||ns|
|tf|Turn-Off Fall Time|||12||ns|
|**SOURCE-DRAIN DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Source to Drain Diode Forward Current||||12|A|
|ISM|Maximum Pulsed Source to Drain Diode Forward Current||||30|A|
|VSD|Source to Drain Diode Forward Voltage|VGS= 0 V, ISD= 6 A|||1.2|V|
|trr|Reverse Recovery Time|VDD= 400 V, ISD= 6 A,<br>dIF/dt = 100 A/�s||251||ns|
|Qrr|Reverse Recovery Charge|||3.4||�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. 

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**3** 

**FCB260N65S3** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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40<br>VGS =10.0 V<br>8.0 V<br>7.0 V<br>10 6.5 V<br>6.0 V<br>5.5 V<br>1<br>250  � s Pulse Test<br>TC = 25 ° C<br>0.1<br>0.2 1 10 20<br>VDS, Drain−Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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30<br>VDS = 20 V<br>250  � s Pulse Test<br>10<br>150 ° C<br>25 ° C<br>−55 ° C<br>1<br>3 4 5 6 7 8 9<br>VGS, Gate−Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

**Figure 2. Transfer Characteristics** 

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0.8 TC = 25 ° C<br>0.6<br>0.4<br>VGS = 10 V<br>VGS = 20 V<br>0.2<br>0.0<br>0 10 20 30 40<br>ID, Drain Current (A)<br>Figure 3. On−Resistance Variation vs.<br>Drain Current and Gate Voltage<br>100000<br>10000<br>Ciss<br>1000<br>100<br>Coss<br>10 VGS = 0 V<br>f = 1 MHz<br>1 Ciss = Cgs + Cgd (Cds = shorted) Crss<br>Coss = Cds + Cgd<br>0.1 C rss  = C gd<br>0.1 1 10 100 1000<br>VDS, Drain−Source Voltage (V)<br>) �<br>, Drain−Source<br>DS(ON) On−Resistance (<br>R<br>Capacitances (pF)<br>**----- End of picture text -----**<br>


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100<br>VGS = 0 V<br>250  � s Pulse Test<br>10<br>150 ° C<br>1 25 ° C<br>0.1<br>−55 ° C<br>0.01<br>0.001<br>0.0 0.5 1.0 1.5<br>VSD, Body Diode Forward Voltage (V)<br>Figure 4. Body Diode Forward Voltage<br>Variation vs. Source Current and<br>Temperature<br>10<br>ID = 6 A<br>8<br>VDS = 130 V<br>VDS = 400 V<br>6<br>4<br>2<br>0<br>0 6 12 18 24 30<br>Qg, Total Gate Charge (nC)<br>, Reverse Drain Current (A)<br>IS<br>, Gate−Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance Characteristics** 

**Figure 6. Gate Charge Characteristics** 

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**FCB260N65S3** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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1.2<br>VGS = 0 V<br>ID = 10 mA<br>1.1<br>1.0<br>0.9<br>0.8<br>−50 0 50 100 150<br>TJ, Junction Temperature ( � C)<br>Figure 7. Breakdown Voltage Variation<br>vs. Temperature<br>100<br>30  � s<br>10 100  � s<br>1 ms<br>10 ms<br>DC<br>1<br>Operation in this Area<br>0.1 is Limited by RDS(on)<br>TC = 25 ° C<br>TJ = 150 ° C<br>Single Pulse<br>0.01<br>1 10 100 1000<br>VDS, Drain−Source Voltage (V)<br>Figure 9. Maximum Safe Operating Area<br>6<br>4<br>2<br>0<br>0 130 260 390 520 650<br>VDS, Drain to Source Voltage (V)<br>, Drain−Source<br>DSS<br>BV<br>Breakdown Voltage (Normalized)<br>, Drain Current (A)<br>ID<br>J)<br>�<br>, (<br>OSS<br>E<br>**----- End of picture text -----**<br>


**Figure 9. Maximum Safe Operating Area** 

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3.0<br>VGS = 10 V<br>ID = 6 A<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>−50 0 50 100 150<br>TJ, Junction Temperature ( � C)<br>Figure 8. On−Resistance Variation<br>vs. Temperature<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature ( � C)<br>, Drain−Source<br>DS(on)<br>R<br>On−Resistance (Normalized)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 10. Maximum Drain Current vs. Case Temperature** 

**Figure 11. EOSS vs. Drain to Source Voltage** 

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**FCB260N65S3** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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2<br>1 DUTY CYCLE − DESCENDING ORDER<br>D = 0.5<br>0.2<br>0.1<br>0.1 0.05 PDM<br>0.02<br>0.01 t1<br>t2<br>0.01 Z � JC(t) = r(t) x R � JC<br>SINGLE PULSE R � JC = 1.39 ° C/W<br>Peak TJ = PDM x Z � JC(t) + TC<br>Duty Cycle, D = t 1  / t 2<br>0.001<br>10−5 10−4 10−3 10−2 10−1 100 101<br>t, Rectangular Pulse Duration (sec)<br>Thermal Resistance<br>r(t), Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Figure 12. Transient Thermal Response Curve** 

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**FCB260N65S3** 

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**----- Start of picture text -----**<br>
VGS<br>RL Qg<br>VGS VDS Qgs Qgd<br>DUT<br>IG = Const.<br>Charge<br>**----- End of picture text -----**<br>


**Figure 13. Gate Charge Test Circuit & Waveform** 

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VDS RL VDS 90% 90% 90%<br>VGS VDD<br>RG<br>10% 10%<br>DUT VGS<br>VGS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


**Figure 14. Resistive Switching Test Circuit & Waveforms** 

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L<br>VDS EAS  � [1] 2 � LIAS2<br>BVDSS<br>ID<br>IAS<br>RG VDD ID(t)<br>VGS DUT VDD VDS(t)<br>t<br>p Time<br>t<br>p<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

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**FCB260N65S3** 

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+<br>DUT<br>VDS<br>−<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT<br>VDD<br>VGS<br>− dv/dt controlled by RG<br>− ISD controlled by pulse period<br>Gate Pulse Width<br>D  �<br>Gate Pulse Period<br>VGS 10 V<br>(Driver)<br>IFM, Body Diode Forward Current<br>ISD di/dt<br>(DUT)<br>IRM<br>Body Diode Reverse Current<br>Body Diode Recovery dv/dt<br>VDS<br>(DUT) VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**8** 

## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>ISSUE E<br>**----- End of picture text -----**<br>


**SCALE 1:1** 

## DATE 25 OCT 2019 

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XXXXXX = Specific Device Code<br>OP TI ON A L CONS T RUC TI ONS A = Assembly Location<br>GENERIC MARKING DIAGRAMS* WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>XX AYWW W = Week Code (SSG)<br>XXXXXXXXX XXXXXXXXG XXXXXXXXG XXXXXX M = Month Code (SSG)<br>AWLYWWG AYWW  AKA XXYMW G = Pb−Free Package<br>AKA = Polarity Indicator<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present. Some products<br>IC Standard Rectifier SSG may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON56370E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: D [2] PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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