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FCB20N60
Power MOSFET, N Channel, 600 V, 20 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation P
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 208W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 20A
- Drain Source On State Resistance: 0.19ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 2.54 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**==> picture [56 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> March 2013<br>**----- End of picture text -----**<br> ## **FCB20N60** ## **N-Channel SuperFET[®] MOSFET** **600 V, 20 A, 190 m** Ω ## **Features** - 650V @TJ = 150°C - Typ. RDS(on) = 150 m Ω - Ultra Low Gate Charge (Typ. Qg = 75 nC) - Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) - 100% Avalanche Tested - RoHS Compliant ## **Description** SuperFET[®] MOSFET is Fairchild Semiconductor[®] ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. ## **Application** - Lighting - Solar Inverter - AC-DC Power Supply **==> picture [482 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>D<br>G<br>G S S<br>MOSFET Maximum Ratings TC = 25 [o] C unless otherwise noted*<br>Symbol Parameter FCB20N60 Unit<br>es<br>VDSS Drain to Source Voltage 600 V<br>es ID Drain Current eeee -Continuous -Continuous ((TTCC = 25 = 100 [o] C [o] C) ) 12.520 A<br>a IDM Drain Current - Pulsed (Note 1) 60.0 A<br>VGSS Gate to Source Voltage ±30 V<br>es<br>EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ<br>es<br>IAR Avalanche Current (Note 1) 20 A<br>es<br>EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ<br>es<br>dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns<br>es<br>PD Power Dissipation - Derate above 25(TC = 25 [o] C) [o] C 1.67208 W/W [o] C<br>ee ee oe<br>TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC<br>es a<br>TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 oC<br>*Drain current limited by maximum junction temperature<br>Thermal Characteristics<br>Symbol Parameter FCB20N60 Unit<br>R θ JC Thermal Resistance, Junction to Case, Max 0.6<br>R θ JA* Thermal Resistance, Junction to Ambient, Max* 40 oC/W<br>R θ JA Thermal Resistance, Junction to Ambient, Max 62.5<br>*When mounted on the minimum pad size recommended (PCBMount)<br>**----- End of picture text -----**<br> ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 www.fairchildsemi.com **1** ## **Package Marking and Ordering Information** |**Device Marking**|**Device Marking**|**Device**|**Package**|**Package**|**Reel Size**|**Tape Width**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|**Quantity**| |---|---|---|---|---|---|---|---|---|---|---|---| |FCB20N60||FCB20N60|D2-PAK||330mm|24m|||800||| |**Electrical Characteristics**TC= 25oC unless otherwise noted|||||||||||| |**Symbol**|**Parameter**|||**Test Conditions**|||**Min.**|**Typ.**||**Max.**|**Unit**| |**Off Characteristics**|||||||||||| |BVDSS|Drain to Source Breakdown Voltage|||VGS= 0 V,ID= 250μA, TC= 25oC|||600|-||-|V| |||||VGS= 0 V,ID= 250μA, TC= 150oC|||-|650||-|V| |ΔBVDSS<br> ΔTJ|Breakdown Voltage Temperature<br>Coefficient|||ID= 250μA, Referenced to 25oC|||-|0.6||-|V/oC| |BVDS|Drain-Source Avalanche Breakdown<br>Voltage|||VGS= 0 V, ID= 20 A|||-|700||-|V| |IDSS|Zero Gate Voltage Drain Current|||VDS= 600 V, VGS= 0 V|||-|-||1|μA| |||||VDS= 480 V, VGS= 0 V, TC= 125oC|||-|-||10|| |IGSS|Gate to Body Leakage Current|||VGS= ±30 V, VDS= 0 V|||-|-||±100|nA| |**On Characteristics**|||||||||||| |VGS(th)|Gate Threshold Voltage|||VGS= VDS, ID= 250μA|||3.0|-||5.0|V| |RDS(on)|Static Drain to Source On Resistance|||VGS= 10 V, ID= 10 A|||-|0.15||0.19|Ω| |gFS|Forward Transconductance|||VDS= 40 V, ID= 10 A(Note 4)|||-|17||-|S| |**Dynamic Characteristics**|||||||||||| |Ciss|Input Capacitance|||VDS= 25 V, VGS= 0 V<br>f = 1.0 MHz|||-|2370||3080|pF| |Coss|Output Capacitance||||||-|1280||1665|pF| |Crss|Reverse Transfer Capacitance||||||-|95||-|pF| |Coss|Output Capacitance|||VDS= 480 V, VGS= 0 V, f = 1.0 MHz|||-|65||85|pF| |Cosseff.|Effective Output Capacitance|||VDS= 0 V to 400 V, VGS= 0 V|||-|165||-|pF| |**Switching Characteristics**|||||||||||| |td(on)|Turn-On DelayTime|||VDD= 300 V, ID= 20 A<br>RG= 25Ω<br>(Note 4, 5)|||-|62||135|ns| |tr|Turn-On Rise Time||||||-|140||290|ns| |td(off)|Turn-Off DelayTime||||||-|230||470|ns| |tf|Turn-Off Fall Time||||||-|65||140|ns| |Qg(tot)|Total Gate Charge at 10V|||VDS= 480 V, ID= 20 A,<br>VGS= 10 V<br>(Note 4, 5)|||-|75||98|nC| |Qgs|Gate to Source Gate Charge||||||-|13.5||18|nC| |Qgd|Gate to Drain “Miller” Charge||||||-|36||-|nC| ## **Drain-Source Diode Characteristics** |IS|Maximum Continuous Drain to Source Diode Forward Current|Maximum Continuous Drain to Source Diode Forward Current|-|-|20|A| |---|---|---|---|---|---|---| |ISM|Maximum Pulsed Drain to Source Diode Forward Current||-|-|60|A| |VSD|Drain to Source Diode Forward Voltage|VGS = 0 V, ISD= 20 A|-|-|1.4|V| |trr|Reverse RecoveryTime|VGS= 0 V, ISD= 20 A<br>dIF/dt = 100 A/μs(Note 4)|-|530|-|ns| |Qrr|Reverse RecoveryCharge||-|10.5|-|μC| ## **Notes:** 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10 A, VDD = 50 V, RG = 25 Ω , Starting TJ = 25 ° C 3. ISD ≤ 20 A, di/dt ≤ 200 A/ μ s, VDD ≤ BVDSS, Starting TJ = 25 ° C 4. Pulse Test: Pulse width ≤ 300 μ s, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 **2** ## **Typical Performance Characteristics** ## **Figure 1. On-Region Characteristics** ## **Figure 2. Transfer Characteristics** **==> picture [468 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 102<br> VGS 102<br>Top : 15.0 V<br> 10.0 V<br> 8.0 V<br> 7.0 V<br> 6.5 V<br>101 6.0 V Bottom : 5.5 V 101 150 ° C<br>25 ° C<br>-55 ° C<br>100 100<br> Notes : Note<br> 1. 250 2. T C = μ 25 s Pulse Test ° C 1. V 2. 250DS μ =s Pulse Test 40V<br>10-1 100 101 2 4 6 8 10<br>VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]<br>Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage<br> Drain Current and Gate Voltage Variation vs. Source Current<br>and Temperatue<br>0.4 102<br>0.3<br>VGS = 10V 101<br>0.2<br>VGS = 20V<br>150 ° C 25 ° C<br>0.1 100<br> Notes :<br> 1. V GS = 0V<br>Note : TJ = 25 ° C 2. 250 μ s Pulse Test<br>0.0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>ID, Drain Current [A] VSD , Source-Drain Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>10000 12<br>9000 CCiss oss = C = Cgs ds + C + Cgd gd (Cds = shorted) VDS = 100V<br>8000 C rss = C gd 10 V DS = 250V<br>7000 VDS = 400V<br>8<br>6000 C oss<br>5000 6<br> Notes :<br>4000 C iss 1. V 2. f = GS 1 MHz = 0 V<br>4<br>3000<br>2000 C rss 2<br>1000 Note : ID = 20A<br>010-1 100 101 0 0 10 20 30 40 50 60 70 80<br>VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]<br>, Drain Current [A]ID , Drain Current [A]ID<br>],<br> [O<br>DS(ON)<br>R<br> , Reverse Drain Current [A]<br>Drain-Source On-Resistance IDR<br>Capacitance [pF]<br>, Gate-Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br> ## **Figure 5. Capacitance Characteristics** www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 **3** ## **Typical Performance Characteristics (Continued)** **==> picture [468 x 605] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation<br> vs. Temperature vs. Temperature<br>1.2 3.0<br>2.5<br>1.1<br>2.0<br>1.0 1.5<br>1.0<br> Notes :<br>0.9 1. V GS = 0 V Notes :<br> 2. ID = 250 μ A 0.5 1. V GS = 10 V<br> 2. ID = 20 A<br>0.8 0.0<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [ ° C] TJ, Junction Temperature [ ° C]<br>Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current<br>vs. Case Temperature<br>25<br>Operation in This Area<br>102 is Limited by R DS(on)<br>20<br>100 us<br>101 1 ms<br>10 ms 15<br>DC<br>100<br>10<br> Notes :<br>10-1 1. T 2. TCJ = 150 = 25 ° C ° C 5<br> 3. Single Pulse<br>10-2100 101 102 103 025 50 75 100 125 150<br>VDS, Drain-Source Voltage [V] TC, Case Temperature [ ° C]<br>Figure 11. Transient Thermal Response Curve<br>10 0<br>D =0.5<br>10 -1 0.2 N otes : 1. Z θ JC (t) = 0.6 ° C /W M ax.<br>0.1 2. D uty Factor, D =t 1 /t 2<br> 3. T JM - T C = P DM * Z θ JC (t)<br>0.05<br>PDM<br>0.02<br>0.01 t 1 t2<br>10 -2 sin g le p ulse<br>10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1<br>t 1, S quare W ave Pulse D uration [sec]<br>, (Normalized) , (Normalized)<br>DSS DS(ON)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]ID , Drain Current [A]ID<br>(t), Thermal Response<br>ZJC θ<br>**----- End of picture text -----**<br> www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 **4** **==> picture [446 x 577] intentionally omitted <==** **----- Start of picture text -----**<br> Gate Charge Test Circuit & Waveform<br>VGS<br>Same Type<br>50KΩ as DUT Qg<br>12V 200nF 300nF 10V<br>VGS VDS Qgs Qgd<br>DUT<br>3mA<br>Charge<br> Resistive Switching Test Circuit & Waveforms<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>DUT VGS<br>10V<br>td(on) tr td(off) tf<br>t on t off<br> Unclamped Inductive Switching Test Circuit & Waveforms<br>VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD<br>I D BVDSSIAS<br>RG VDD ID (t)<br>10V DUT VDD VDS (t)<br>t p t p Time<br>**----- End of picture text -----**<br> ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 www.fairchildsemi.com **5** ## **Peak Diode Recovery dv/dt Test Circuit & Waveforms** **==> picture [320 x 494] intentionally omitted <==** **----- Start of picture text -----**<br> DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------Gate Pulse Period 10V<br>( Driver )<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br> www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 **6** ## **Mechanical Dimensions** **==> picture [57 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> D [2] PAK<br>**----- End of picture text -----**<br> Dimensions in Millimeters www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 **7** ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. |2Cool™<br>AccuPower™<br>AX-CAP®*<br>BitSiC™<br>Build it Now™<br>CorePLUS™<br>CorePOWER™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>DEUXPEED®<br>Dual Cool™<br>EcoSPARK®<br>EfficentMax™<br>ESBC™<br>®|FPS™<br>F-PFS™<br>FRFET®<br>Global Power ResourceSM<br>Green Bridge™<br>Green FPS™<br>Green FPS™ e-Series™<br>G_max_™<br>GTO™<br>IntelliMAX™<br>ISOPLANAR™<br>Marking Small Speakers Sound Louder<br>and Better™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™|PowerTrench®<br>PowerXS™<br>Programmable Active Droop™<br>QFET®<br>QS™<br>Quiet Series™<br>RapidConfigure™<br>Saving our world, 1mW/W/kW at a time™<br>SignalWise™<br>SmartMax™<br>SMART START™<br>Solutions for Your Success™<br>SPM®<br>™<br>tm®|Sync-Lock™<br>®*<br>TinyBoost™<br>TinyBuck™<br>TinyCalc™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>TranSiC®<br>TriFault Detect™<br>TRUECURRENT®*<br>μSerDes™<br>E SYSTEM<br>GENERAL| |---|---|---|---| |Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series™<br>FACT®<br>FAST®<br>FastvCore™<br>FETBench™|MicroPak2™<br>MillerDrive™<br>MotionMax™<br>mWSaver™<br>OptoHiT™<br>OPTOLOGIC®<br>OPTOPLANAR®|STEALTH™<br>SuperFET®<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SupreMOS®<br>SyncFET™|UHC®<br>Ultra FRFET™<br>UniFET™<br>VCX™<br>VisualMax™<br>VoltagePlus™<br>XS™| *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ## **ANTI-COUNTERFEITING POLICY** Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. ## **PRODUCT STATUS DEFINITIONS Definition of Terms** |**Datasheet Identification**|**Product Status**|**Definition**| |---|---|---| |Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.| |Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.| Rev. I64 ©2008 Fairchild Semiconductor Corporation FCB20N60 Rev. C0 www.fairchildsemi.com **8**
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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