FCB110N65F

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## **FCB110N65F** 

## **N-Channel SuperFET[® ] II FRFET[® ] MOSFET** 

## **650 V, 35 A, 110 m** Ω 

## **Features** 

- 700 V @TJ = 150°C 

- Typ. RDS(on) = 96 mΩ (Typ.) 

- Ultra Low Gate Charge (Typ. Qg = 98 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) 

- 100% Avalanche Tested 

- RoHS Compliant 

## **Applications** 

- Telecom/Server Power Supplies • Solar Inverters 

## **Description** 

SuperFET[®] II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. 

SuperFET[®] II FRFET[®] MOSFET combines a faster and more rugged intrinsic body diode performance with fast switching, aimed at achieving better reliability and efficiency especially in resonant switching applications. 

SuperFET[®] II FRFET[®] is very suitable for the switching power applications such as server/telecom power, Solar inverter, FPD TV power, computing power, lighting and industrial power applications. 

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• Computing Power Supplies • FPD TV Power/Lighting<br>D<br>D<br>G<br>G<br>S D [2] -PAK<br>2 @®<br>S<br>Absolute Maximum Ratings TC = 25oC unless otherwise noted.<br>Symbol Parameter FCB110N65F Unit<br>VDSS Drain to Source Voltage 650 V<br>- DC ±20<br>VGSS Gate to Source Voltage - AC                                                     ±30 V<br>7<br>ID Drain Current - Continuous - Continuous ((TTCC = 25 = 100 [o] C [o] C) ) 2435 A<br>a IDM Drain Current - Pulsed                                          (Note 1) 105 A<br>EAS Single Pulsed Avalanche Energy (Note 2) 809 mJ<br>IAR Avalanche Current                                                                                         (Note 1) 8 A<br>EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ<br>MOSFET dv/dt                                                                                           (Note 3) 100<br>dv/dt V/ns<br>Peak Diode Recovery dv/dt  50<br>PD Power Dissipation - Derate Above 25(TC = 25 [o] C) [o] C 2.86357 W/W [o] C<br>a TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC<br>TL Maximum Lead Temperature for Soldering,1/8” from Case for 5 Seconds 300 oC<br>aes<br>Thermal Characteristics<br>Symbol Parameter FCB110N65F Unit<br>RθJC Thermal Resistance, Junction to Case        0.35<br>Thermal Resistance, Junction to Ambient (Mimimum Pad of 2-oz copper), Max. 62.5 oC/W<br>RθJA<br>——— Thermal Resistance, Junction to Ambient (1 in [2]  Pad of 2-oz copper = ), Max. 40<br>©2015 Fairchild Semiconductor Corporation 1<br>FCB110N65F Rev. 1.1<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

## **Package Marking and Ordering Information** 

**Part Number Top Mark Package Packing Method Reel Size Tape Width Tape Width** FCB110N65F FCB110N65F D[2] -PAK Tape and Reel 330 mm 24 mm 800 units **Electrical Characteristics** TC = 25[o] C unless otherwise noted. **Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics** BVDSS Drain to Source Breakdown Voltage IIDD = 10 mA, V = 10 mA, VGSGS = 0 V, T = 0 V, TJJ = 25 = 150°C°C 700650 -- -- VV ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25[o] C - 0.72 - V/[o] C IDSS Zero Gate Voltage Drain Current VVDSDS = 650 V, V = 520 V, VGSGS  = 0 V, T= 0 V C = 125[o] C -- 11010μA ~~==~~ IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA **On Characteristics** VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3.5 mA 3 - 5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 17.5 A - 96 110 mΩ ~~——————————~~ gFS Forward Transconductance VDS = 20 V, ID = 17.5 A - 30 - S **Dynamic Characteristics** Ciss Input Capacitance - 3680 4895 pF Coss Output Capacitance Vf = 1 MHzDS = 100 V, VGS = 0 V, - 110 145 pF Crss Reverse Transfer Capacitance - 0.65 - pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 65 - pF Coss eff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 464 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 17.5 A, - 98 145 nC Qgs Gate to Source Gate Charge VGS = 10 V - 20 - nC Qgd Gate to Drain “Miller” Charge (Note  4) - 43 - nC ~~==~~ ESR ~~==~~ Equivalent Series Resistance f = 1 MHz ~~aS~~ - ~~=~~ 0.7 ~~=e~~ - Ω **Switching Characteristics** td(on) Turn-On Delay Time - 31 72 ns tr Turn-On Rise Time VDD = 380 V, ID = 17.5 A, - 21 52 ns td(off) Turn-Off Delay Time VGS = 10 V, Rg = 4.7 Ω - 89 188 ns ~~————==~~ tf Turn-Off Fall Time (Note 4) - 5.7 21 ns **Drain-Source Diode Characteristics** IS Maximum Continuous Drain to Source Diode Forward Current - - 35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 100 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 17.5 A - - 1.4 V trr Reverse Recovery Time VGS = 0 V, ISD = 17.5 A, - 133 - ns ~~eS~~ Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 0.67 - μC **Notes:** 1. Repetitive rating: pulse width limited by maximum junction temperature. 

2. IAS = 8 A, RG = 25 Ω, starting TJ = 25°C. 

3. ISD ≤ 17.5 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 

4. Essentially independent of operating temperature typical characteristics. 

©2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1 

www.fairchildsemi.com 

**2** 

## **Typical Performance Characteristics** 

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Figure 2. Transfer Characteristics<br>**----- End of picture text -----**<br>


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200 200<br>VGS = 10.0V *Notes:<br>100             8.0V 100    1. V DS  = 20V<br>            7.0V    2. 250 μ s Pulse Test<br>            6.5V<br>            6.0V<br>            5.5V<br>150oC<br>10 10<br>25oC<br>*Notes: -55 o C<br>   1. 250 μ s Pulse Test<br>   2. TC = 25 [o] C<br>1 oe) 1 LA<br>0.3 1 10 20 3 4 5 6 7 8<br>VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                  Variation vs. Source Current<br>                                                                                                               and Temperature<br>0.25 200<br>100<br>0.20 10<br>CEEEHEH-H i EES<br> 150 [o] C<br>1<br>0.15<br>25 [o] C<br>A V GS  = 10V 0.1 ere<br>0.10<br>VGS = 20V 0.01 *Notes:<br>1. VGS = 0V<br>*Note: TC = 25 [o] C 2. 250 μ s Pulse Test<br>[ann oaae He<br>0.05 0.001<br>0 Ppp 20 40 60 pt 80 100 0.0 Tae 0.3 0.6 0.9 1.2 1.5 1.8<br>ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>100000 10<br>*Note: ID = 17.5A<br>10000 Ser Sail Gill Ciss 8 VDS = 130V<br>VDS = 325V<br>1000<br>Sa 6 EL VDS = 520V<br>Coss<br>100<br>*Note: 4<br>10 eps    2. f = 1MHz   1. VGS = 0V Crss EAE<br>1 Poa Ciss = Cgs + Cgd (Cds = shorted) 2<br>Coss = Cds + Cgd<br>Crss = Cgd<br>0.1 Piet 0 EEEEEEES<br>0.1 1 10 100 660 0 20 40 60 80 100<br>VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]<br>, Drain Current[A] , Drain Current[A]<br>ID ID<br>],<br>Ω<br> [<br>DS(ON)<br>R<br>, Reverse Drain Current [A]<br>Drain-Source On-Resistance IS<br>, Gate-Source Voltage [V]<br>Capacitances [pF]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage and Temperature** 

©2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1 

www.fairchildsemi.com 

**3** 

**Typical Performance Characteristics** (Continued) 

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       Figure 7. Breakdown Voltage Variation                      Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                            vs. Temperature<br>1.15 2.5<br>*Notes: *Notes:<br>   1. V GS  = 0V    1. VGS = 10V<br>1.10    2. I D = 10mA    2. ID = 17.5A<br>2.0<br>1.05 meeeval<br>1.5<br>1.00 Taam Annee<br>1.0<br>0.95 Tia annnene<br>0.90 AiG 0.5<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [ [o] C] TJ, Junction Temperature [ [o] C]<br>          Figure 9. Maximum Safe Operating Area                   Figure 10. Maximum Drain Current<br>                                                                                                                     vs. Case Temperature<br>300 40<br>100<br>10 μ s<br>S65 100 μ s 30 LT<br>10<br>Seal 1ms Pe<br>DC 20<br>1 Operation in This Area<br>ors) is Limited by R DS(on) =  LAE<br>* Notes:<br>0.1    1. TC = 25 [o] C 10<br>   2. TJ = 150 [o] C<br>   3. Single Pulse<br>0.01 0<br>0.1 1 10 100 1000 25 50 75 100 125 150<br>VDS, Drain-Source Voltage [V] TC, Case Temperature [ [o] C]<br>   Figure 11. Eoss vs. Drain to Source Voltage<br>                     Switching Capability<br>20<br>16<br>ppp<br>12<br>ae<br>8<br>Ealep- dene<br>4 oeff<br>0 ft ft<br>0 132 264 396 528 660<br>VDS, Drain to Source Voltage [V]<br>, [Normalized] , [Normalized]<br>DSS DS(on)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]<br>ID<br>, Drain Current [A]<br>ID<br>J]<br>μ<br>, [<br>OSS<br>E<br>**----- End of picture text -----**<br>


©2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1 

www.fairchildsemi.com 

**4** 

## **Typical Performance Characteristics** (Continued) 

**Figure 12. Transient Thermal Response Curve** 

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1<br>0.5<br>0.1<br>0.2<br>Es SS ori al al<br>0.1 —“a PDM :<br>0.05 t1<br>0.01 0.02 0.01 A *Notes: t2<br>|<br>Single pulse    1. Z θ JC(t) = 0.35 [o] C/W Max.<br>   2. Duty Factor, D= t 1 /t 2<br>   3. TJM - TC = PDM * Z θ JC(t)<br>0.001 fina<br>10-5 10-4 10-3 10-2 10-1 1<br>t1, Rectangular Pulse Duration [sec]<br>oC/W]Thermal Response [<br>(t),<br>ZJC θ<br>**----- End of picture text -----**<br>


©2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1 

www.fairchildsemi.com 

**5** 

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IG = const.<br>F<br>Charge<br> Figure 13. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>=n wa t on 4S t off<br> Figure 14. Resistive Switching Test Circuit & Waveforms<br>Vos oyL Eas= >4 Llas5<br>| D ~ dD BVpss = —_<br>of las |— _<br>: Rnr <r) FF Voo lo(t)<br>VGS TL DUT Vop<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms** 

©2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1 

www.fairchildsemi.com 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

©2015 Fairchild Semiconductor Corporation FCB110N65F Rev. 1.1 

www.fairchildsemi.com 

**7** 

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10.67 -A- 10.67<br>9.65<br>1.68<br>4 1.00 4<br>9.45<br>9.65<br>8.38<br>10.00<br>1.78 MAX 2<br>2 0.25 MAX<br>PLASTIC BODY 3.80<br>STUB<br>1 3 1 3<br>(2.12) 1.781.14 1.05<br>0.99 0.25 M B A M 5.08<br>0.51<br>LAND PATTERN RECOMMENDATION<br>5.08<br>UNLESS NOTED, ALL DIMS TYPICAL<br>FRONT VIEW - DIODE PRODUCTS VERSION<br>ALTERNATIVE SUPPLIER DETAIL -B-<br>4.83<br>4.06<br>6.22 MIN<br>1.65<br>1.14<br>4 4<br>6.86 MIN<br>15.88<br>14.61 SEE<br>DETAIL A<br>2<br>2<br>3 1 3 1<br>BACK VIEW - DIODE PRODUCTS VERSION NOTES: UNLESS OTHERWISE SPECIFIED<br>ALTERNATIVE SUPPLIER DETAIL    A)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>   B)  REFERENCE JEDEC, TO-263, VARIATION AB.<br>   C)  DIMENSIONING AND TOLERANCING PER<br>GAGE PLANE        DIMENSIONING AND TOLERANCING PER<br>       ASME Y14.5 - 2009.<br>0.74    D)  LOCATION OF THE PIN HOLE MAY VARY<br>0.25 0.33 ��        (LOWER LEFT CORNER, LOWER CENTER<br>��         AND CENTER OF THE PACKAGE).<br>   E)  LANDPATTERN RECOMMENDATION PER IPC<br>         TO254P1524X482-3N<br>2.79 0.10 B    F)  FILENAME: TO263A02REV8<br>1.78 ��<br>0.25 MAX (5.38) ��<br>SEATING<br>PLANE<br>���������������������<br>SCALE: 2X<br>**----- End of picture text -----**<br>


ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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