FCA47N60-F109

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## **FCA47N60 / FCA47N60_F109** 

## **N-Channel SuperFET[®] MOSFET** 

**600 V, 47 A, 70 m** Ω 

## **Features** 

- 650 V @ TJ = 150°C 

- Typ. RDS(on) = 58 mΩ 

- Ultra Low Gate Charge (Typ. Qg= 210 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) 

- 100% Avalanche Tested 

## **Application** 

## **Description** 

SuperFET[®] MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. 

- Solar Invertor 

• AC-DC Power Supply **D G TO-3PN G D** Ze **S** ~~&~~ **S Absolute Maximum Ratings Symbol Parameter FCA47N60 FCA47N60_F109 Unit** ~~fp~~ VDSS Drain-Source Voltage 600 V ID Drain Current                                - Continuous (TC = 25°C) 47 A - Continuous (TC = 100°C) 29.7 A ~~1.OhhCllU~~ IDM Drain Current                                - Pulsed                  (Note 1) 141 A ~~————~~ VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy                                 (Note 2) 1800 mJ ~~—~~ IAR Avalanche Current                                                       (Note 1) 47 A EAR Repetitive Avalanche Energy                                       (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt                                          (Note 3) 4.5 V/ns ~~eS~~ PD Power Dissipation (TC = 25°C) 417 W - Derate above 25°C 3.33 W/°C ~~i | Mm—oi(rd |~~ TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 300 °C 1/8” from Case for 5 Seconds ~~aee~~ **Thermal Characteristics Symbol Parameter Typ. Max. Unit** RθJC Thermal Resistance, Junction-to-Case, Max. -- 0.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. -- 41.7 °C/W 

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©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

**1** 

## **Package Marking and Ordering Information** 

|**Electrical Characteristics**TC= 25oC unless otherwise noted.<br>**Off Characteristics**<br>**On Characteristics**<br>**Dynamic Characteristics**<br>**Switching Characteristics**<br>**Drain-Source Diode Characteristics**<br>Device Marking<br>Device<br>Package<br>Reel Size<br>Tape Width<br>Quantity<br>FCA47N60<br>FCA47N60<br>TO-3PN<br>-<br>-<br>30<br>FCA47N60<br>FCA47N60_F109<br>TO-3PN<br>-<br>-<br>30<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>BVDSS<br>Drain-Source Breakdown Voltage<br>VGS= 0 V, ID= 250μA, TJ= 25°C<br>600<br>--<br>--<br>V<br>VGS= 0 V, ID= 250μA, TJ= 150°C<br>--<br>650<br>--<br>V<br>ΔBVDSS<br>/ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA, Referenced to 25°C<br>--<br>0.6<br>--<br>V/°C<br>BVDS<br>Drain-Source Avalanche Breakdown<br>Voltage<br>VGS= 0 V, ID= 47 A<br>--<br>700<br>--<br>V<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 600 V, VGS= 0 V<br>VDS= 480 V, TC= 125°C<br>--<br>--<br>--<br>--<br>1<br>10<br>μA<br>μA<br>IGSSF<br>Gate-Body Leakage Current, Forward<br>VGS= 30 V, VDS= 0 V<br>--<br>--<br>100<br>nA<br>IGSSR<br>Gate-Body Leakage Current, Reverse<br>VGS= -30 V, VDS= 0 V<br>--<br>--<br>-100<br>nA<br>VGS(th)<br>Gate Threshold Voltage<br>VDS= VGS, ID= 250μA<br>3.0<br>--<br>5.0<br>RDS(on)<br>Static Drain-Source<br>On-Resistance<br>VGS= 10 V, ID= 23.5 A<br>--<br>0.058<br>0.07<br>gFS<br>Forward Transconductance<br>VDS=20 V, ID= 23.5 A<br>--<br>40<br>--<br>VGS(th)<br>Gate Threshold Voltage<br>VDS= VGS, ID= 250μA<br>3.0<br>--<br>5.0<br>Ciss<br>Input Capacitance<br>VDS= 25 V, VGS= 0 V,<br>f = 1.0 MHz<br>--<br>5900<br>8000<br>pF<br>Coss<br>Output Capacitance<br>--<br>3200<br>4200<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>--<br>250<br>--<br>pF<br>Coss<br>Output Capacitance<br>VDS= 480 V, VGS= 0 V, f = 1.0 MHz<br>--<br>160<br>--<br>pF<br>Cosseff.<br>Effective Output Capacitance<br>VDS= 0 V to 400 V, VGS= 0 V<br>--<br>420<br>--<br>pF<br>td(on)<br>Turn-On Delay Time<br>VDD= 300 V, ID= 47 A<br>RG= 25Ω<br>(Note 4)<br>--<br>185<br>430<br>ns<br>tr<br>Turn-On Rise Time<br>--<br>210<br>450<br>ns<br>td(off)<br>Turn-Off Delay Time<br>--<br>520<br>1100<br>ns<br>tf<br>Turn-Off Fall Time<br>--<br>75<br>160<br>ns<br>Qg<br>Total Gate Charge<br>VDS= 480 V, ID= 47 A<br>VGS= 10 V<br>(Note 4)<br>--<br>210<br>270<br>nC<br>Qgs<br>Gate-Source Charge<br>--<br>38<br>--<br>nC<br>Qgd<br>Gate-Drain Charge<br>--<br>110<br>--<br>nC<br>IS<br>Maximum Continuous Drain-Source Diode Forward Current<br>--<br>--<br>47<br>A<br>ISM<br>Maximum Pulsed Drain-Source Diode Forward Current<br>--<br>--<br>141<br>A<br>VSD<br>Drain-Source Diode Forward Voltage<br>VGS= 0 V, IS= 47 A<br>--<br>--<br>1.4<br>V<br>trr<br>Reverse Recovery Time<br>VGS= 0 V, IS= 47 A<br>dIF/dt =100 A/μs(Note 4)<br>--<br>590<br>--<br>ns<br>Qrr<br>Reverse Recovery Charge<br>--<br>25<br>--<br>μC<br>**Notes:**<br>1. Repetitive Rating: Pulse-width limited by maximum junction temperature.<br>2. IAS= 18 A, RG= 25Ω, starting TJ= 25°C<br>~~CS~~<br>~~Saeeaeereee~~<br>~~SSeo~~<br>~~ea~~<br>~~So~~<br>~~itis~~|
|---|



2. IAS = 18 A, RG = 25 Ω, starting TJ = 25°C 

3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C 

4. Essentially independent of operating temperature typical characteristics. 

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©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

**2** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>                    VTop :       15.0 V GS<br>102                 10.0 V                   8.0 V                  7.0 V 102<br>                  6.5 V<br>                  6.0 V<br>__ Bottom :    5.5 V 150℃<br>101<br>101 25℃<br>-55℃<br>100 ※   1. 250    2. T  Notes : C = 25 μ s Pulse Test ℃ 100 ※   2. 250    1. V  Note DS = 40V μ s Pulse Test<br>10-1 100 101 2 4 6 8 10<br>VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage  [V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>Drain Current and Gate Voltage Variation vs. Source Current<br>and Temperatue<br>0.20<br>0.15 102 SS<br>VGS = 10V<br>0.10<br>. 101 Off<br>VGS = 20V 150℃ 25℃<br>0.05<br>※ Notes :<br>※ Note : TJ = 25℃ 100    2. 250    1. VGS = 0V μ s Pulse Test<br>0.00<br>0 20 40 60 80 100 120 140 160 180 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>ID, Drain Current [A] VSD , Source-Drain Voltage  [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>30000 12<br>CC iss oss = C = C gs ds + C + C gd gd(C ds  = shorted) VDS = 100V<br>25000 C rss  = C gd 10 V DS  = 250V<br>VDS = 400V<br>20000 8<br>Coss<br>15000 6<br>※ Notes :<br>Ciss    1. V    2. f = 1 MHzGS  = 0 V<br>10000 4<br>5000 C rss 2<br>※ Note : ID = 47A<br>010 cE -1 100 101 0 0 50 100 150 200 250<br>VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]<br>, Drain Current [A]ID  , Drain Current  [A]ID<br>],Drain-Source On-Resistance<br>Ω  , Reverse Drain Current  [A]<br> [DS(ON) IDR<br>R<br>Capacitance [pF]<br>, Gate-Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


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©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

**3** 

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Typical Characteristics  (Continued)<br>       Figure 7. Breakdown Voltage Variation                          Figure 8. On-Resistance Variation<br>vs. Temperature  vs. Temperature<br>1.2 3.0<br>2.5<br>1.1<br>2.0<br>1.0 1.5<br>1.0<br>※ Notes :<br>0.9    1. V    2. IDGS = 250 A  = 0 V μ 0.5    1. V ※ Notes :GS  = 10 V<br>   2. ID = 47 A<br>0.8 0.0<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]<br>       Figure 9. Safe Operating Area                                        Figure 10. Maximum Drain Current<br>                                                                                                     vs. Case Temperature<br>50<br>Operation in This Area<br>102 . is Limited by R  DS( o n) s 7saS= = = iga . \<br>Zz - . =<= ~= = ~. 100 us \ 40<br>101 - - 2 > . . 7 x4 DC “|he. 10 ms ~ .. 1 ms ~5~=~so~..tL 2 “|I1\ i) 30<br>100 \<br>20<br>※ Notes :<br>10-1    2. T    1. T CJ = =  150   25 oC oC 10<br>   3. Single Pulse<br>10-2100 101 102 103 025 50 75 100 125 150<br>VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]<br>    Figure 11. Transient Thermal Response Curve<br>D = 0.5<br>1 0 -1 ※  N o te s  :<br>0.2    1 . Z θ JC [(t) =  0 .3  ] ℃ /W  M a x.<br>   2 . D u ty F a c to r, D = t 1 /t 2<br>   3 . T JM  - T C  =  P D M  * Z θ JC [(] [t][)]<br>0.1<br>0.05 PDM<br>0.02 t1<br>1 0 -2 0.01 t2<br>single pulse<br>1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1<br>t 1, S q u a re  W a ve  P u ls e  D u ra tio n  [se c ]<br>, (Normalized) , (Normalized)<br>DSS DS(ON)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]ID , Drain Current [A]ID<br>(t), Thermal ResponseJC<br>Zθ<br>**----- End of picture text -----**<br>


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©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

**4** 

**Figure 12. Gate Charge Test Circuit & Waveform** 

**Figure 13. Resistive Switching Test Circuit & Waveforms** 

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**----- Start of picture text -----**<br>
VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>t on t off<br>**----- End of picture text -----**<br>


**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms** 

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**----- Start of picture text -----**<br>
VGS<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

**5** 

**Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

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**----- Start of picture text -----**<br>
DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ff}<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>eerie<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


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©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

**6** 

## **Mechanical Dimensions** 

## **Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65** 

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©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

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Rev. I68 

©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. 1 

**8** 

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