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FB50R07W2E3B23BOMA1
IGBT Module, PIM, 45 A, 1.45 V, 20 mW, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPIM Series
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: PIM
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 45A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 31.78 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FB50R07W2E3_B23** **EasyPIM[™] module** ## **EasyPIM[™] module with fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 650 V - IC nom = 50 A / ICRM = 100 A - Trench IGBT 3 - Low switching losses - Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps ## **Potential applications** - Air conditioning ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** **==> picture [26 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>;<br>**----- End of picture text -----**<br> Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.01 2022-09-16 **FB50R07W2E3_B23 EasyPIM[™] module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, Rectifier**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**IGBT, Boost**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Diode, Boost**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**Diode, Reverse**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10| |**9**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**10**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| |**11**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| |**12**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22| Datasheet Revision 1.01 2022-09-16 2 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|2.5|kV| |Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|11.5|mm| |Creepage distance|_d_Creep|terminal to terminal|6.3|mm| |Clearance|_d_Clear|terminal to heatsink|10.0|mm| |Clearance|_d_Clear|terminal to terminal|5.0|mm| |Comparative tracking<br>index|_CTI_||> 200|| |Relative thermal index<br>(electrical)|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE|||30||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TH=25°C, per switch||6||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch||5||mΩ| |Storage temperature|_T_stg||-40||125|°C| |Mounting force per clamp|_F_||40||80|N| |Weight|_G_|||39||g| _Note: The current under continuous operation is limited to 25 A rms per connector pin._ ## **2 IGBT, Inverter** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||50|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|45|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||100|A| ## **(table continues...)** Datasheet Revision 1.01 2022-09-16 3 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |Gate-emitter peak voltage|_V_GES|||±20|||V| ||||||||| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 50 A,_V_GE= 15 V|_T_vj= 25 °C||1.45|1.90|V| ||||_T_vj= 125 °C||1.60||| ||||_T_vj= 150 °C||1.70||| |Gate threshold voltage|_V_GEth|_I_C= 0.8 mA, VCE= VGE,_T_vj|= 25 °C|5.05|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 400 V|||0.5||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||3.1||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.095||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.018|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 8.2 Ω|_T_vj= 25 °C||0.029||µs| ||||_T_vj= 125 °C||0.030||| ||||_T_vj= 150 °C||0.031||| |Rise time (inductive load)|_t_r|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 8.2 Ω|_T_vj= 25 °C||0.059||µs| ||||_T_vj= 125 °C||0.060||| ||||_T_vj= 150 °C||0.061||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 8.2 Ω|_T_vj= 25 °C||0.180||µs| ||||_T_vj= 125 °C||0.210||| ||||_T_vj= 150 °C||0.220||| |Fall time (inductive load)|_t_f|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 8.2 Ω|_T_vj= 25 °C||0.110||µs| ||||_T_vj= 125 °C||0.140||| ||||_T_vj= 150 °C||0.150||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 50 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 8.2 Ω, di/dt = 550<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.37||mJ| ||||_T_vj= 125 °C||1.78||| ||||_T_vj= 150 °C||1.89||| **(table continues...)** Datasheet Revision 1.01 2022-09-16 4 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 50 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 8.2 Ω, dv/dt =<br>4000 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.17||mJ| ||||_T_vj= 125 °C||1.57||| ||||_T_vj= 150 °C||1.66||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 360 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 6 µs,<br>_T_vj=150 °C||250||A| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT|||1.02||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Continuous DC forward<br>current|_I_F|||50|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||100|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|370|A²s| ||||_T_vj= 150 °C|330|| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 50 A,_V_GE= 0 V|_T_vj= 25 °C||1.56|1.95|V| ||||_T_vj= 125 °C||1.49||| ||||_T_vj= 150 °C||1.45||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 300 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt = 550<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||34||A| ||||_T_vj= 125 °C||48||| ||||_T_vj= 150 °C||53||| |Recovered charge|_Q_r|_V_CC= 300 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt = 550<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||2.4||µC| ||||_T_vj= 125 °C||4.4||| ||||_T_vj= 150 °C||5.1||| ## **(table continues...)** Datasheet Revision 1.01 2022-09-16 5 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, Rectifier** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Reverse recovery energy|_E_rec|_V_CC= 300 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt = 550<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.62||mJ| ||||_T_vj= 125 °C||1.11||| ||||_T_vj= 150 °C||1.28||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode|||1.45||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 Diode, Rectifier** |**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|||| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1600|V| |Maximum RMS forward<br>current per chip|_I_FRMSM|_T_H= 80 °C||50|A| |Maximum RMS current at<br>rectifier output|_I_RMSM|_T_H= 80 °C||50|A| |Surge forward current|_I_FSM|_t_P= 10 ms|_T_vj= 25 °C|665|A| ||||_T_vj= 150 °C|526|| |I2t - value|_I_2_t_|_t_P= 10 ms|_T_vj= 25 °C|2210|A²s| ||||_T_vj= 150 °C|1380|| |**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 50 A|_T_vj= 150 °C||0.93||V| |Reverse current|_I_r|_T_vj= 150 °C,_V_R= 1600 V|||1.1||mA| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode|||1.03||K/W| |Temperature under<br>switching conditions|_T_vj, op|||-40||150|°C| Datasheet Revision 1.01 2022-09-16 6 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 IGBT, Boost** ## **5 IGBT, Boost** |**5**<br>**IGBT, Boost**|**5**<br>**IGBT, Boost**|**5**<br>**IGBT, Boost**|**5**<br>**IGBT, Boost**|**5**<br>**IGBT, Boost**|**5**<br>**IGBT, Boost**| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||50|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|35|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||100|A| |Gate-emitter peak voltage|_V_GES|||±20|V| **Table 10 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 50 A,_V_GE= 15 V|_T_vj= 25 °C||1.60|2.20|V| ||||_T_vj= 125 °C||1.75||| ||||_T_vj= 150 °C||1.79||| |Gate threshold voltage|_V_GEth|_I_C= 0.5 mA, VCE= VGE,_T_vj=|25 °C|3.85|4.60|5.35|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 400 V|||0.217||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||2.75||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.01||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.014|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 18 Ω|_T_vj= 25 °C||0.054||µs| ||||_T_vj= 125 °C||0.051||| ||||_T_vj= 150 °C||0.050||| |Rise time (inductive load)|_t_r|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 18 Ω|_T_vj= 25 °C||0.064||µs| ||||_T_vj= 125 °C||0.064||| ||||_T_vj= 150 °C||0.065||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 18 Ω|_T_vj= 25 °C||0.130||µs| ||||_T_vj= 125 °C||0.140||| ||||_T_vj= 150 °C||0.150||| **(table continues...)** Datasheet Revision 1.01 2022-09-16 7 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, Boost** |**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 50 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 18 Ω|_T_vj= 25 °C||0.016||µs| ||||_T_vj= 125 °C||0.027||| ||||_T_vj= 150 °C||0.029||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 50 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 18 Ω, di/dt = 650<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.52||mJ| ||||_T_vj= 125 °C||1.79||| ||||_T_vj= 150 °C||1.84||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 50 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 18 Ω, dv/dt = 1100<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.41||mJ| ||||_T_vj= 125 °C||0.54||| ||||_T_vj= 150 °C||0.57||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 400 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 0 µs,<br>_T_vj=150 °C||250||A| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT|||1.42||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 Diode, Boost** |**6**<br>**Diode, Boost**|**6**<br>**Diode, Boost**|**6**<br>**Diode, Boost**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Implemented forward<br>current|_I_FN|||50|A| |Continuous DC forward<br>current|_I_F|||50|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||100|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|225|A²s| ||||_T_vj= 150 °C|215|| Datasheet Revision 1.01 2022-09-16 8 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Diode, Reverse** |**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 50 A,_V_GE= 0 V|_T_vj= 25 °C||1.65|2.15|V| ||||_T_vj= 125 °C||1.55||| ||||_T_vj= 150 °C||1.50||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 300 V,_I_F= 50 A,<br>_V_GE= 15 V, -diF/dt = 650<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||14.9||A| ||||_T_vj= 125 °C||24.5||| ||||_T_vj= 150 °C||26.5||| |Recovered charge|_Q_r|_V_CC= 300 V,_I_F= 50 A,<br>_V_GE= 15 V, -diF/dt = 650<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.1||µC| ||||_T_vj= 125 °C||2.2||| ||||_T_vj= 150 °C||2.6||| |Reverse recovery energy|_E_rec|_V_CC= 300 V,_I_F= 50 A,<br>_V_GE= 15 V, -diF/dt = 650<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.18||mJ| ||||_T_vj= 125 °C||0.38||| ||||_T_vj= 150 °C||0.46||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode|||1.61||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 Diode, Reverse** |**7**<br>**Diode, Reverse**|**7**<br>**Diode, Reverse**|**7**<br>**Diode, Reverse**|||| |---|---|---|---|---|---| |**Table 13**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Continuous DC forward<br>current|_I_F|||10|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||20|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|12.5|A²s| ||||_T_vj= 150 °C|9.5|| Datasheet Revision 1.01 2022-09-16 9 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 NTC-Thermistor** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 14**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 10 A,_V_GE= 0 V|_T_vj= 25 °C||1.60|2.00|V| ||||_T_vj= 125 °C||1.55||| ||||_T_vj= 150 °C||1.52||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode|||2.72||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **8 NTC-Thermistor** |**8**<br>**NTC-Thermistor**|**8**<br>**NTC-Thermistor**|**8**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 15**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet Revision 1.01 2022-09-16 10 **FB50R07W2E3_B23 EasyPIM[™] module** **9 Characteristics diagrams** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, Inverter** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>90 90<br>80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, Inverter Switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 8.2 Ω, RGon = 8.2 Ω, VCC = 300 V, VGE = ± 15 V<br>100 7.0<br>90<br>6.0<br>80<br>5.0<br>70<br>60<br>4.0<br>50<br>3.0<br>40<br>30<br>2.0<br>20<br>1.0<br>10<br>0 0.0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.01 2022-09-16 11 **FB50R07W2E3_B23 EasyPIM[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, Inverter** ## E = f(RG) VGE = ± 15 V, IC = 50 A, VCC = 300 V ## **Switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCC = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0 10<br>7.0<br>6.0 1<br>5.0<br>4.0 0.1<br>3.0<br>2.0 0.01<br>1.0<br>0.0 0.001<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 100<br>Switching times (typical), IGBT, Inverter Transient thermal impedance , IGBT, Inverter<br>t = f(RG) Zth = f(t)<br>IC = 50 A, VCC = 300 V, VGE = ± 15 V, Tvj = 150 °C<br>10 10<br>1<br>1<br>0.1<br>0.1<br>0.01<br>0.001 0.01<br>0 10 20 30 40 50 60 70 80 90 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.01 2022-09-16 12 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **Reverse bias safe operating area (RBSOA), IGBT, Switching losses (typical), Diode, Inverter Inverter** Erec = f(IF) IC = f(VCE)C = f(VCE) = f(VCE)CE)) RGon = RGon(IGBT) , VCC = 300 V IC = f(VCE)C = f(VCE) = f(VCE)CE)) RGoff = 8.2 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 120 2.0<br>110<br>1.8<br>100<br>1.6<br>90<br>1.4<br>80<br>1.2<br>70<br>60 1.0<br>50<br>0.8<br>40<br>0.6<br>30<br>0.4<br>20<br>0.2<br>10<br>0 0.0<br>0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 100<br>Forward characteristic (typical), Diode, Inverter Switching losses (typical), Diode, Inverter<br>IF = f(VF) Erec = f(RG)<br>IF = 50 A, VCC = 300 V<br>100 1.6<br>90<br>1.4<br>80<br>1.2<br>70<br>1.0<br>60<br>50 0.8<br>40<br>0.6<br>30<br>0.4<br>20<br>0.2<br>10<br>0 0.0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 60 70 80 90<br>**----- End of picture text -----**<br> Datasheet Revision 1.01 2022-09-16 13 **FB50R07W2E3_B23 EasyPIM[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Transient thermal impedance, Diode, Inverter** Zth = f(t) **Output characteristic (typical), IGBT, Boost** IC = f(VCE) VGE = 15 V **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 10 100<br>90<br>80<br>70<br>1<br>60<br>50<br>40<br>0.1<br>30<br>20<br>10<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>Output characteristic field (typical), IGBT, Boost Transfer characteristic (typical), IGBT, Boost<br>IC = f(VCE) IC = f(VGE)<br>Tvj = 150 °C VCE = 20 V<br>100 100<br>90 90<br>80 80<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0.0 1.0 2.0 3.0 4.0 5.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.01 2022-09-16 14 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Switching losses (typical), IGBT, Boost** ## E = f(IC) RGoff = 18 Ω, RGon = 18 Ω, VCC = 300 V, VGE = ± 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Boost** t = f(IC) RGoff = 18 Ω, RGon = 18 Ω, VCC = 300 V, VGE = ± 15 V, Tvj = 150 °C ## **Switching losses (typical), IGBT, Boost** E = f(RG) VGE = ± 15 V, VCC = 300 V, IC = 50 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0<br>7.0<br>6.0<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> **Switching times (typical), IGBT, Boost** t = f(RG) IC = 50 A, VCC = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1<br>0.1 0.1<br>0.01 0.01<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> Datasheet Revision 1.01 2022-09-16 15 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **Reverse bias safe operating area (RBSOA), IGBT, Boost** IC = f(VCE) **Transient thermal impedance , IGBT, Boost** Zth = f(t) Tvj = 150 °C, RGoff = 18 Ω, VGE = ±15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, Boost** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, Boost** Erec = f(IF) RGon = RGon(IGBT) , VCC = 300 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.01 2022-09-16 16 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **==> picture [540 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> Switching losses (typical), Diode, Boost Transient thermal impedance, Diode, Boost<br>Erec = f(RG) Zth = f(t)<br>IF = 50 A, VCC = 300 V<br>0.5 10<br>0.4<br>1<br>0.3<br>0.2<br>0.1<br>0.1<br>0.0 0.01<br>0 20 40 60 80 100 120 140 160 180 200 0.001 0.01 0.1 1 10<br>Forward characteristic (typical), Diode, Reverse Transient thermal impedance, Diode, Reverse<br>IF = f(VF) Zth = f(t)<br>20 10<br>18<br>16<br>14<br>1<br>12<br>10<br>8<br>0.1<br>6<br>4<br>2<br>0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.01 2022-09-16 17 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Circuit diagram** **==> picture [167 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 10 Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [93 x 140] intentionally omitted <==** **==> picture [21 x 33] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.01 2022-09-16 18 **FB50R07W2E3_B23 EasyPIM[™] module** **11 Package outlines** **11 Package outlines** **Figure 2** Datasheet Revision 1.01 2022-09-16 19 **FB50R07W2E3_B23 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **12 Module label code** ## **12 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.01 2022-09-16 20 **FB50R07W2E3_B23 EasyPIM[™] module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |V1.0|2019-06-24|Target datasheet| |V1.1|2020-03-20|Target datasheet| |n/a|2020-09-01|Datasheet migrated to a new system with a new layout and new revision<br>number schema: target or preliminary datasheet = 0.xy; final datasheet =<br>1.xy| |1.00|2021-03-25|| |1.01|2022-09-16|Correction according ERRATA 10282ERRA| Datasheet Revision 1.01 2022-09-16 21 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2022-09-16 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2022 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAY200-004** Infineon Technologies in customer’s applications. ## 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Updated at April 28, 2026
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →