FAM65V05DF1

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## Auto SPM Series Automotive 3-Phase IGBT Smart Power Module 

## FAM65V05DF1 

## **General Description** 

FAM65V05DF1 is an advanced Auto SPM module providing a fully−featured high−performance auxiliary inverter output stage for hybrid and electric vehicles. These modules integrate optimized gate drive of the built−in IGBTs to minimize EMI and losses, while also providing various protection features, in a compact 12 cm[2] footprint. 

## **Features** 

- Automotive SPM in 27 Pin DIP Package 

- 650 V/50 A 3−phase IGBT Module with Low Loss IGBTs and Soft Recovery Diodes Optimized for Motor Control Applications 

3D Package Drawing (Click to Activate 3D Content) **ASPM27−CCA** s\ **CASE MODCB** ge **MARKING DIAGRAM** 

- Integrated Gate Drivers with Internal VS connection, Under Voltage lockout, Over−current shutdown, Temperature Sensing Unit and Fault reporting 

 Electrically Isolated AlN Substrate with Low R jc 

- Module Serialization for Full Traceability 

- UL Certified No. E209204 (UL 1557)  Pb−Free, Halid Free and RoHS Compliant  AEC & AQG324 Qualified and PPAP Capable **Applications and Benefits** eR 

- Automotive high voltage auxiliary motors such as air conditioning \ oo 

- compressor and oil pump.  Compact Design  .e Qe Simplified PCB Layout and Low EMI WO 

- Simplified Assembly  High Reliability Ww 

- «ww4 ae 

- **Related Resources**  AN−8422 − 650 V Auto SPM Series; Automotive 3−Phase IGBT Smart Power Module User’s Guide 

= **onsemi** Logo = Specific Device Code JuUY WU = Lot Number Uo 

ON = **onsemi** Logo FAM65V05DF1 = Specific Device Code XXX = Lot Number Y = Year WW = Work Week 

0000001 = Serial Number 

## ~~ee~~ 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 7 of this data sheet. 

Publication Order Number: **FAM65V05DF1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2016 **May, 2024 − Rev. 3** 

**FAM65V05DF1** 

## **PIN CONFIGURATION** 

TOP VIEW 

## **Figure 1. Pin Configuration** 

## **PIN DESCRIPTION** 

|**Pin Number**|**Name**|**Description**|
|---|---|---|
|1|VCC (L)|Low−side Common Bias Voltage for IC and IGBTs Driving|
|2|COM|Common Supply Ground|
|3|IN (UL)|Signal Input for Low−side U Phase|
|4|IN (VL)|Signal Input for Low−side V Phase|
|5|IN (WL)|Signal Input for Low−side W Phase|
|6|VFO|Fault Output|
|7|VTS|Output for LVIC temperature sense|
|8|CSC|Capacitor (Low−pass Filter) for Short−Current Detection Input|
|9|IN (UH)|Signal Input for High−side U Phase|
|10|VCC (H)|High−side Common Bias Voltage for IC and IGBTs Driving|
|11|VB (U)|High−side Bias Voltage for U Phase IGBT Driving|
|12|VS (U)|High−side Bias Voltage Ground for U Phase IGBT Driving|
|13|IN (VH)|Signal Input for High−side V Phase|
|14|VCC (H)|High−side Common Bias Voltage for IC and IGBTs Driving|
|15|VB (V)|High−side Bias Voltage for V Phase IGBT Driving|
|16|VS (V)|High−side Bias Voltage Ground for V Phase IGBT Driving|
|17|IN (WH)|Signal Input for High−side W Phase|
|18|VCC (H)|High−side Common Bias Voltage for IC and IGBTs Driving|
|19|VB (W)|High−side Bias Voltage for W Phase IGBT Driving|
|20|VS (W)|High−side Bias Voltage Ground for W Phase IGBT Driving|
|21|NU|Negative DC–Link Input for U Phase|
|22|NV|Negative DC–Link Input for V Phase|



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## **PIN DESCRIPTION** (continued) 

|**Pin Number**|**Name**|**Description**|
|---|---|---|
|23|NW|Negative DC–Link Input for W Phase|
|24|U|Output for U Phase|
|25|V|Output for V Phase|
|26|W|Output for W Phase|
|27|P|Positive DC–Link Input|



## **INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS** 

**Figure 2. Schematic** 

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**FAM65V05DF1** 

## **GATE DRIVERS BLOCK DIAGRAM** 

## **High Side Gate Driver (x3 Single Channel)** 

- Control circuit under−voltage (UV) protection 

- 3.3 V/5 V CMOS/LSTTL compatible, Schmitt trigger input 

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AS7107X High−Side Region<br>VB<br>UVLO R<br>XOR<br>CommonMode Common Noise R Q DriverPre HO<br>Mode<br>VCC Filter<br>25 V CancellerNoise CancellerNoise S 25 V<br>25 V VS<br>HIN Input Short−Pulse<br>Filter Generator<br>5 k �<br>COM<br>RRS−Latch<br>**----- End of picture text -----**<br>


**Figure 3. High Side Gate Drivers (Block Diagram)** 

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## **Low Side Gate Driver (x1 Monolithic Three−Channel)** 

- Control circuit under−voltage (UV) protection 

- Fault Output 

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 3.3 V/5 V CMOS/LSTTL compatible, Schmitt trigger<br>input<br> U−Phase<br>LINU LOU<br> V−Phase<br>LINV LOV<br>W−Phase<br>VDD<br>LINW Input Filter Matching Delay Restart Pre LOW<br>Driver<br>5 k �<br>80 mA<br>TSD<br>TSU TSU FO<br>(Temperature Sensing Unit) UVLO Timer Filter<br>CSC<br>CSC Filter<br>0.5 V<br>VCC COM<br>25 V<br>AS4743X<br>**----- End of picture text -----**<br>


- Short circuit protection (SC) 

- Temperature sensing unit 

**Figure 4. Low Side Gate Drivers (Block Diagram)** 

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**FAM65V05DF1** 

**ABSOLUTE MAXIMUM RATINGS** (TJ = 25C, unless otherwise specified) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TJ= 25C|, unless otherwise specified)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|**INVERTER PART**|||||
|VPN|Supply Voltage|Applied between P− NU, NV, NW|500|V|
|VPN(Surge)|Supply Voltage (Surge)|Applied between P− NU, NV, NW<br>dI/dt3 A/ns|575|V|
|VCES|Collector−Emitter Voltage<br>at the IGBT/Diode|TJ= 25C|650|V|
|IC|IGBT Continuous Collector<br>Current|TC= 100C, TJmax= 175C (Note 1)|50|A|
|ICP|IGBT Peak Collector Pulse<br>Current|TC= 100C, TJmax= 175C,<br>VCC= VBS= 15 V, less than 1 ms (Note 6)|150|A|
|PC|Collector Dissipation|TC= 25C per IGBT|333|W|
|TJ|Junction Temperature|IGBT/Diode|−40 ~ +175|C|
|||Driver IC|−40 ~ +150|C|
|**CONTROL PART**|||||
|VCC|Control Supply Voltage|Applied between VCC(H), VCC(L)− COM|20|V|
|VBS|High−side Control Bias Voltage|Applied between VB(U)− VS(U),<br>VB(V)− VS(V), VB(W)− VS(W)|20|V|
|VIN|Input Signal Voltage|Applied between IN(UH), IN(VH), IN(WH),<br>IN(UL), IN(VL), IN(WL)− COM|−0.3 ~ VCC+ 0.3|V|
|VFO|Fault Output Supply Voltage|Applied between VFO− COM|−0.3 ~ VCC+ 0.3|V|
|IFO|Fault Output Current|Sink Current at VFOPin|5|mA|
|VSC|Current Sensing Input Voltage|Applied between CSC− COM|−0.3 ~ VCC+ 0.3|V|
|VTS|Temperature Sense Unit||−0.3 ~ 2/3VCC|V|
|**TOTAL SYSTEM**|||||
|TSTG|Storage Temperature||−40 ~ 125|C|
|VISO|Isolation Voltage|60 Hz, Sinusoidal, AC 1 minute,<br>Connection Pins to heat sink plate|2500|Vrms|
|TLEAD|Max Lead Temperature at the<br>Base of the Package During<br>pcb Assembly|No remelt of internal solder joints|200|C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **PACKAGE CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Conditions**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|Rth(j−c)Q|Junction to Case Thermal<br>Resistance (Note 2)|Inverter IGBT part (per IGBT)|−|0.45|C/W|
|Rth(j−c)F||Inverter FWD part (per DIODE)|−|0.85|C/W|
|L�|Package Stray Inductance|P to NU, NV, NW(Note 3)|24|−|nH|



1. Current limited by package terminal, defined by design. 

2. Case temperature measured below the package at the chip center, compliant with MIL STD 883−1012.1 (single chip heating), DBC discoloration allowed, please refer to application note AN−9190 _(Impact of DBC Oxidation on SPM Module Performance)._ 

3. Stray inductance per phase measured per IEC 60747−15. 

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## **ELECTRICAL CHARACTERISTICS** 

|**Symbol**|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**INVERTER PART**(TJas specified)||||||||
|VCE(SAT)||Collector-Emitter Leakage<br>Current|VCC= VBS= 15 V, VIN= 5 V<br>IC= 50 A, TJ= 25C|−|1.65|−|V|
||||VCC= VBS= 15 V, VIN= 5 V<br>IC= 50 A, TJ= 125C|−|1.9|2.4|V|
|VF||FWD Forward Voltage|VIN= 0 V, IF= 30 A, TJ= 25C|−|2.1|−|V|
||||VIN= 0 V, IF= 30 A, TJ= 125C|−|1.9|2.5|V|
|HS|tON|High Side Switching Times|VPN= 300 V, VCC= VBS= 15 V<br>IC= 50 A<br>VIN= 0 V5 V, Ls = 55 nH,<br>Inductive Load<br>TJ= 25C (Notes 4, 5)|−|0.73|−|�s|
||tC(ON)|||−|0.12|−||
||tOFF|||−|0.80|−||
||tC(OFF)|||−|0.14|−||
||trr|||−|0.10|−||
||tON|High Side Switching Times|VPN= 300 V, VCC= VBS= 15 V<br>IC= 50 A<br>VIN= 0 V5 V, Ls = 55 nH,<br>Inductive Load<br>TJ= 125C (Notes 4, 5)|−|0.70|−|�s|
||tC(ON)|||−|0.15|−||
||tOFF|||−|0.87|−||
||tC(OFF)|||−|0.19|−||
||trr|||−|0.20|−||
|LS|tON|Low Side Switching Times|VPN= 300 V, VCC= VBS= 15 V<br>IC= 50 A<br>VIN= 0 V5 V, Ls = 55 nH,<br>Inductive Load<br>TJ= 25C (Notes 4, 5)|−|0.68|−|�s|
||tC(ON)|||−|0.20|−||
||tOFF|||−|0.86|−||
||tC(OFF)|||−|0.19|−||
||trr|||−|0.14|−||
||tON|Low Side Switching Times|VPN= 300 V, VCC= VBS= 15 V<br>IC= 50 A<br>VIN= 0 V5 V, Ls = 55 nH,<br>Inductive Load<br>TJ= 125C (Notes 4, 5)|−|0.64|−|�s|
||tC(ON)|||−|0.24|−||
||tOFF|||−|0.88|−||
||tC(OFF)|||−|0.23|−||
||trr|||−|0.20|−||
|SCWT||Short Circuit Withstand Time<br>(Note 6)|VCC= VBS= 15 V, VPN= 450 V,<br>TJ= 25C, Non−repetitive|−|5|−|�s|
|ICES||Collector−Emitter Leakage<br>Current for IGBT and Diode<br>in Parallel|TJ= 25C, VCE= 650 V|−|3|−|�A|
||||TJ= 125C, VCE= 650 V|−|150|1500|�A|



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## **ELECTRICAL CHARACTERISTICS** (continued) 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**CONTROL PART**(TJ= −40C to 150C, unless otherwise specified, typical values specified at TJ= 125C)||||||||
|IQCCL|Quiescent VCCSupply Current|VCC= 15 V,<br>IN(UL, VL, WL)= 0 V|VCC(L)− COM|−|−|5|mA|
|IQCCH||VCC= 15 V,<br>IN(UH, VH, WH)= 0 V|VCC(H)− COM|−|−|150|�A|
|IPCCH|Operating VCCSupply Current|VCC(UH, VH, WH)= 15 V<br>fPWM= 20 kHz<br>Duty = 50%, applied to<br>one PWM signal input<br>for high−side|VCC(UH)– COM<br>VCC(VH)– COM<br>VCC(WH)– COM|−|−|0.30|mA|
|IQCCL||VCC(UH, VH, WH)= 15 V<br>fPWM= 20 kHz<br>Duty = 50%, applied to<br>one PWM signal input<br>for low−side|VCC(L)– COM|−|−|8.5|mA|
|IQBS|Quiescent VBSSupply Current|VBS= 15 V,<br>IN(UH, VH, WH)= 0 V|VB(U)− VS(U)<br>VB(V)−VS(V)<br>VB(W)− VS(W)|−|−|150|�A|
|IPBS|Operating VBSSupply Current|VCC= VBC= 15 V<br>IN(UH, VH, WH)= 0 V|VB(U)− VS(U)<br>VB(V)−VS(V)<br>VB(W)− VS(W)|−|−|4.5|mA|
|VFOH|Fault Output Voltage|VSC= 0 V, VFOCircuit: 4.7 k�to 5 V Pull−up||4.5|−|−|V|
|VFOL||VSC= 1 V, VFOCircuit: 4.7 k�to 5 V Pull−up||−|−|0.5|V|
|VSC(ref)|Short−Circuit Trip Level|VCC= 15 V (Note 7)|CSC−COM|0.45|0.52|0.59|V|
|UVCCD|Supply Circuit Under−<br>Voltage Protection|Detection Level, TJ= 125C||10.6|−|13.2|V|
|UVCCR||Reset Level, TJ= 125C||11.0|−|13.8|V|
|UVBSD||Detection Level, TJ= 125C||10.5|−|13|V|
|UVBSR||Reset Level, TJ= 125C||10.8|−|13.3|V|
|tFOD|Fault−out Pulse Width|||−|60|−|�s|
|VTS|LVIC Temperature Sensing<br>Voltage Output|VCC(L)= 15 V, TLVIC=125C (Note 8)||−|2.4|−|V|
|VIN(ON)|ON Threshold Voltage|Applied between IN(UH), IN(VH), IN(WH),<br>IN(UL), IN(VL), IN(WL)– COM||−|2.6|3.1|V|
|VIN(OFF)|OFF Threshold Voltage|||0.9|1.2|−|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

4. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching times of IGBT itself under the given gate driving condition internally. Refer to Figure 6 for detailed information. 

5. Stray inductance Ls is sum of stray inductance of module & setup. 

6. Verified by design and bench−testing only. 

7. Short−circuit current protection is functional only for low side. 

8. TLVIC is the junction temperature of the LVIC itself. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Shipping**|
|---|---|---|---|
|FAM65V05DF1|FAM65V05DF1|ASPM27−CCA|10 Units/Tube|



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FAM65V05DF1<br>HINx<br>LINx<br>''<br>1'<br>''<br>'' 1 trr t<br>\' toff \ ton 1 i)<br>f i]<br>i] ' 1 100% ICx<br>ae h<br>ICx ! | ;<br>90% ICx<br>VCEx 10% VCEx f 10% ICx 10% ICx 7 t4 10% V - CEx<br>1f'<br>i) 4 1 tc(off) » i)' i)‘' 4 tc(on) > 1V<br>Figure 5. Switching Time Definition<br>**----- End of picture text -----**<br>


**Figure 6. Switching Evaluation Circuit** 

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## **RECOMMENDED OPERATING CONDITIONS** 

|**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VPN|Supply Voltage|Applied between P − NU, NV, NW|−|450|500|V|
|VCC|Control Supply Voltage|Applied between VCC(H), VCC(L)− COM|13.5|15|16.5|V|
|VBS|High−side Bias Voltage|Applied between VB(U)− VS(U),<br>VB(V)− VS(V), VB(W)− VS(W)|13.3|15|18.5|V|
|dVCC/dt,<br>dVBS/dt<br>~~a~~|Control Supply Variation<br>~~es~~||−1|−|1|V/ s|
|tdead<br>~~a~~|Blanking Time for Preventing Arm−short<br>~~es~~|For Each Input Signal|1.0|−|−|s|
|fPWM<br>~~a~~|PWM Input Signal<br>~~es~~|TC= 125C|−|−|20|kHz|
|VSEN|Voltage for Current Sensing|Applied between NU, NV, NW<br>– COM (Including surge voltage)|−4|−|4|V|
|TJ|Junction Temperature||−40|−|150|C|



## **MECHANICAL CHARACTERISTICS AND RATINGS** 

|**Parameter**|**Conditions**|**Conditions**|**Limits**|**Limits**|**Limits**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min**|**Typ**|**Max**||
|Mounting Torque|Mounting Screw: − M3|Recommended 0.62 Nm|0.52|0.62|0.80|Nm|
|Device Flatness<br>~~ee~~|~~ee~~|~~ee~~|−<br>~~ee~~|−<br>~~ee~~|+150<br>~~ee~~|m<br>~~ee~~|
|Weight|||−|15|−|g|



**Figure 7. Flatness Measurement Position** 

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## **TYPICAL INVERTER CHARACTERISTICS** 

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100 100<br>90 TTJJ = 25 = 125CC 90 TTJJ = 125= 25CC<br>80 T J  = 150C 80 T J  = 150C<br>70 70<br>60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>VCE (V) VCE (V)<br>Figure 8. Output Characteristics IGBT Inverter Figure 9. Forward Characteristics DIODE Inverter<br>(Typical) (Typical)<br>VCC = VBS = 15 V, VIN = 5 V VIN = 0 V<br>18.00 18.00<br>16.00 EON, VPN = 450 VEOFF, VPN = 450 V 16.00 EONEOFF, VPN = 450 V, VPN = 450 V<br>14.00 EON, VPN = 300 V 14.00 EON, VPN = 300 V<br>EOFF, VPN = 300 V EOFF, VPN = 300 V<br>12.00 12.00<br>10.00 10.00<br>8.00 8.00<br>6.00 6.00<br>4.00 4.00<br>2.00 2.00<br>0.00 0.00<br>0 20 40 60 80 100 0 20 40 60 80 100<br>IC, Collector Current (A) IC, Collector Current (A)<br> (A)  (A)<br>IC IC<br>Switching Energy (mJ) Switching Energy (mJ)<br>**----- End of picture text -----**<br>


**Figure 10. Switching Losses IGBT Inverter High−Side (Typical) versus Collector Current** VCC = VBS = 15 V VIN = 0 V  5 V, Ls = 55 nH, Inductive Load, TJ = 125C 

**Figure 11. Switching Losses IGBT Inverter Low−Side (Typical) versus Collector Current** VCC = VBS = 15 V VIN = 0 V  5 V, Ls = 55 nH, Inductive Load, TJ = 125C 

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## **TYPICAL INVERTER CHARACTERISTICS** (continued) 

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0.50<br>ERR, VPN = 450 V, HS<br>0.40 ERRERR, VPN = 300 V, HS, VPN = 450 V, LS<br>ERR, VPN = 300 V, LS<br>0.30<br>0.20<br>0.10<br>0.00<br>0 20 40 60 80 100<br>IF, Forward Current (A)<br>Reverse Recovery Energy (mJ)<br>**----- End of picture text -----**<br>


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175<br>150<br>IC Module<br>125<br>IC Chip<br>100<br>75<br>50<br>25<br>0<br>0 100 200 300 400 500 600 700<br>VCE (V)<br> (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 12. Reverse Recovery Energy DIODE Inverter (Typical) versus Forward Current** VCC = VBS = 15 V VIN = 0 V  5 V, Ls = 55 nH, Inductive Load, TJ = 125C 

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1.00<br>ZthJC IGBT<br>0.10<br>i: 1 2 3 4<br>ri [C/W]: 0.0264 0.0615 0.132 0.05<br>�  [s]: 6.04e−6 5.8e−5 1.25e−3 5.14e−3<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Time Duration (s)<br>)JC<br>�<br>Thermal Response (Z<br>**----- End of picture text -----**<br>


**Figure 14. Transient Thermal Impedance IGBT Inverter** 

**Figure 13. Reverse Bias Safe Operating Area IGBT (RBSOA) Inverter** VCC = VBS = 15 V, Tj = 150C 

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1.00<br>ZthJC DIODE<br>0.10<br>i: 1 2 3 4<br>ri [C/W]: 0.0070 0.1389 0.2439 0.1411<br>�  [s]: 1.05e−5 1.31e−4 2.09e−3 5.86e−<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Time Duration (s)<br>)JC<br>�<br>Thermal Response (Z<br>**----- End of picture text -----**<br>


**Figure 15. Transient Thermal Impedance DIODE Inverter** 

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## **TYPICAL CONTROLLER CHARACTERISTICS** 

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3.50<br>VTS<br>3.00<br>2.50<br>2.00<br>1.50<br>1.00<br>0.50<br>0.00<br>−40 −10 20 50 80 110 140<br>TJ ( � C)<br>VTS (V)<br>**----- End of picture text -----**<br>


**Figure 16. Temperature Profile of VTS (Typical)** 

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12.40<br>UVBSD<br>12.20 UVBSR<br>12.00<br>11.80<br>11.60<br>11.40<br>11.20<br>11.00<br>−40 −10 20 50 80 110 140<br>TJ ( � C)<br>UVBS (V)<br>**----- End of picture text -----**<br>


**Figure 18. Supply Under−Voltage Protection High−Side (Typical)** 

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3.50<br>VIN(ON)<br>3.00 VIN(OFF)<br>2.50<br>2.00<br>1.50<br>1.00<br>0.50<br>−40 −10 20 50 80 110 140<br>TJ ( � C)<br>Figure 17. Threshold Voltage versus Temperature<br>12.80<br>UVCCD<br>12.60 UVCCR<br>12.40<br>12.20<br>12.00<br>11.80<br>11.60<br>11.40<br>11.20<br>−40 −10 20 50 80 110 140<br>TJ ( � C)<br> (V)<br>IN<br>V<br>UVCC (V)<br>**----- End of picture text -----**<br>


**Figure 17. Threshold Voltage versus Temperature** 

**Figure 19. Supply Under−Voltage Protection Low−Side (Typical)** 

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## **TIMING CHART PROTECTIVE FUNCTION** 

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Lower arms<br>A6 A7<br>control input<br>Protection SET RESET<br>circuit state<br>Lower arms A4<br>gate input<br>A3<br>A2<br>SC<br>A1<br>Output Current A8<br>SC Reference Voltage<br>Sensing Voltage<br>tFOD<br>Fault Output Signal A5<br>Step Description<br>A1 Normal operation. IGBT on and carrying current<br>A2 Short−circuit current threshold reached<br>A3 Protection function triggered<br>A4 IGBT turns off with soft turn−off<br>A5 Fault output activated (initial delay 2 � s, tFOD min. 50  � s)<br>A6 IGBT “LO” input<br>A7 IGBT “HI” input is ignored<br>A8 Current stays at zero during fault state<br>**----- End of picture text -----**<br>


**Figure 20. Short−Circuit Current Protection** 

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**13** 

**FAM65V05DF1** 

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Input Signal<br>Protection Circuit<br>RESET SET RESET<br>State<br>UVCCR Filtering<br>Control B1 B6<br>Supply Voltage UVCCD B3<br>B2<br>Restart B4 B7<br>Output Current<br>High−level (no fault output)<br>Fault Output Signal B5<br>**----- End of picture text -----**<br>


|Fault Output Signal|High−level(nofault output)<br>B5|
|---|---|
|**Step**|**Description**|
|B1|Control supply voltage rises above reset voltage UVCCR|
|B2|Normal operation. IGBT on and carrying current|
|B3|Control supply voltage falls below detection voltage UVCCD|
|B4|Filtered supply voltage falls below UVCCDand IGBT turns off|
|B5|Fault output activated (initial delay 2�s, tFODmin. 50ms)|
|B6|Control supply voltage rises above reset voltage UVCCR|
|B7|IGBT “HI” input is followed after fault output duration and supply voltage rise|
|||



**Figure 21. Under−Voltage Protection (Low−side)** 

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Input Signal<br>Protection Circuit RESET SET RESET<br>State<br>UVBSR Filtering<br>Control C1 C5<br>Supply Voltage UVBSD C3<br>C2<br>Restart C4 C6<br>Output Current<br>Fault Output Signal<br>**----- End of picture text -----**<br>


|Output Signal||
|---|---|
|**Step**|**Description**|
|C1|Control supply voltage rises above reset voltage UVCCR|
|C2|Normal operation. IGBT on and carrying current|
|C3|Control supply voltage falls below detection voltage UVCCD|
|C4|Filtered supply voltage falls below UVCCD and IGBT turns off|
|C5|Control supply voltage rises above reset voltage UVCCR|
|C6|IGBT “HI” input is followed after supply voltage rise|



**Figure 22. Under−Voltage Protection (High−side)** 

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**14** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **27LD MODULE PDD STD** CASE MODCB ISSUE A 

DATE 30 JAN 2023 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13500G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: 27LD MODULE PDD STD PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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