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F475R17N3E7B58BPSA1
IGBT Module, Four Pack, 75 A, 1.7 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 3 Series
- IGBT Technology: IGBT 7 [Trench]
- IGBT Termination: Solder Pin
- Power Dissipation: -
- IGBT Configuration: Four Pack
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 90.67 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F4-75R17N3E7_B58 EconoPACK[™] 3 module** ## **Final datasheet** ## **EconoPACK[™] 3 module with TRENCHSTOP[™] IGBT7 and emitter controlled 7 diode and NTC** ## **Features** - Electrical features - VCES = 1700 V - IC nom = 75 A / ICRM = 150 A - Low V CE,sat - T = 150°C vj,op - TRENCHSTOP[TM] IGBT7 - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder - Mechanical features - Integrated NTC temperature sensor - Standard housing - Solder contact technology - Isolated base plate ## **Potential applications** - High-power converters - Medium-voltage converters ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** **==> picture [10 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2024-12-16 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, Rectifier**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |**6**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**7**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |**8**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**9**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| Datasheet Revision 1.00 2024-12-16 2 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||| |---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||3.4|kV| |Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|||3.4|kV| |Material of module<br>baseplate|||||Cu|| |Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3|| |Creepage distance|_d_Creep nom|terminal to baseplate, nom.|||10.0|mm| |Clearance|_d_Clear nom|terminal to baseplate, nom.|||7.5|mm| |Comparative tracking<br>index|_CTI_||||> 225|| |Relative thermal index<br>(electrical)|_RTI_|housing|||140|°C| |Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|7.5<br>mm<br>> 225<br>140<br>°C|7.5<br>mm<br>> 225<br>140<br>°C|7.5<br>mm<br>> 225<br>140<br>°C|7.5<br>mm<br>> 225<br>140<br>°C| |---|---|---|---|---|---|---|---| |**Table 2**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||33||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC= 25 °C, per switch|||2.1||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC= 25 °C, per switch|||2.2||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Weight|_G_||||300||g| _**Note** : The current under continuous operation is limited to 50 A rms per connector pin._ ## **2 IGBT, Inverter** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1700|V| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 90 °C|75|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||150|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 3 2024-12-16 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 75 A,_V_GE= 15 V|_T_vj= 25 °C||1.70|1.85|V| ||||_T_vj= 125 °C||1.95||| ||||_T_vj= 150 °C||2.05||| ||||_T_vj= 175 °C||2.10||| |Gate threshold voltage|_V_GEth|_I_C= 1.54 mA, VCE= VGE,_T_vj= 25 °C||5.2|5.8|6.4|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 900 V, Tvj= 25 °C|||0.7||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||3||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||7.6||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.027||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1700 V,_V_GE= 0 V|_T_vj= 25 °C|||3|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 2.7 Ω|_T_vj= 25 °C||0.109||µs| ||||_T_vj= 125 °C||0.119||| ||||_T_vj= 175 °C||0.124||| |Rise time (inductive load)|_t_r|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 2.7 Ω|_T_vj= 25 °C||0.016||µs| ||||_T_vj= 125 °C||0.021||| ||||_T_vj= 175 °C||0.025||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 6.8 Ω|_T_vj= 25 °C||0.344||µs| ||||_T_vj= 125 °C||0.433||| ||||_T_vj= 175 °C||0.472||| |Fall time (inductive load)|_t_f|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 6.8 Ω|_T_vj= 25 °C||0.274||µs| ||||_T_vj= 125 °C||0.498||| ||||_T_vj= 175 °C||0.640||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 23 nH,_V_GE= ±15 V,<br>_R_Gon= 2.7 Ω, di/dt =<br>2700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||8.4||mJ| ||||_T_vj= 125 °C||13.5||| ||||_T_vj= 175 °C||16.7||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 23 nH,_V_GE= ±15 V,<br>_R_Gof= 6.8 Ω, dv/dt =<br>3500 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||11.9||mJ| ||||_T_vj= 125 °C||19||| ||||_T_vj= 175 °C||23.2||| **(table continues...)** Datasheet Revision 1.00 2024-12-16 4 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 1000 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 8 µs,<br>_T_vj= 150 °C||330||A| ||||_t_P≤ 6 µs,<br>_T_vj= 175 °C||320||| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||0.486|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 1 W/(m·K)|||0.0706||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vjop _> 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1700|V| |Continuous DC forward<br>current|_I_F|||75|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||150|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|600|A²s| ||||_T_vj= 175 °C|510|| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 75 A,_V_GE= 0 V|_T_vj= 25 °C||2.35|2.50|V| ||||_T_vj= 125 °C||2.25||| ||||_T_vj= 150 °C||2.20||| ||||_T_vj= 175 °C||2.10||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 900 V,_I_F= 75 A,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||119||A| ||||_T_vj= 125 °C||111||| ||||_T_vj= 175 °C||110||| ## **(table continues...)** Datasheet Revision 1.00 2024-12-16 5 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, Rectifier** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Recovered charge|_Q_r|_V_CC= 900 V,_I_F= 75 A,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||9.3||µC| ||||_T_vj= 125 °C||18.2||| ||||_T_vj= 175 °C||24||| |Reverse recovery energy|_E_rec|_V_CC= 900 V,_I_F= 75 A,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||4.6||mJ| ||||_T_vj= 125 °C||10.1||| ||||_T_vj= 175 °C||13.7||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.732|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)|||0.0880||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vjop _> 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ ## **4 Diode, Rectifier** |**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|||| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|2200|V| |Maximum RMS forward<br>current per chip|_I_FRMSM|_T_C= 110 °C||135|A| |Maximum RMS current at<br>rectifier output|_I_RMSM|_T_C= 110 °C||150|A| |Surge forward current|_I_FSM|_t_p= 10 ms|_T_vj= 25 °C|1580|A| ||||_T_vj= 150 °C|1290|| |I2t - value|_I_2_t_|_t_p= 10 ms|_T_vj= 25 °C|7990|A²s| ||||_T_vj= 150 °C|5300|| Datasheet Revision 1.00 2024-12-16 6 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 NTC-Thermistor** |**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 168 A|_T_vj= 25 °C||1.15|1.25|V| ||||_T_vj= 125 °C||1.10||| ||||_T_vj= 150 °C||1.10||| |Reverse current|_I_r|_T_vj= 150 °C,_V_R= 2200 V|||2||mA| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.368|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)|||0.0680||K/W| |Temperature under<br>switching conditions|_T_vj, op|||-40||150|°C| _**Note** : According to standard IEC 60749-23, rev. 1.1, 2011-03, HTRB is performed at 125°C_ ## **5 NTC-Thermistor** |**5**<br>**NTC-Thermistor**|**5**<br>**NTC-Thermistor**|**5**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 9**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4._ Datasheet Revision 1.00 2024-12-16 7 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **6 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **6 Characteristics diagrams** **Output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, Inverter** IC = f(VCE) T = 175 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 150 150<br>135 135<br>120 120<br>105 105<br>90 90<br>75 75<br>60 60<br>45 45<br>30 30<br>15 15<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, Inverter Gate charge characteristic (typical), IGBT, Inverter<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 75 A, Tvj = 25 °C<br>150 15<br>135<br>10<br>120<br>105<br>5<br>90<br>75 0<br>60<br>-5<br>45<br>30<br>-10<br>15<br>0 -15<br>5 6 7 8 9 10 11 12 13 14 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-16 8 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Characteristics diagrams** ## **Capacity characteristic (typical), IGBT, Inverter** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C ## **Switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 6.8 Ω, RGon = 2.7 Ω, VGE = ±15 V, VCC = 900 V, Tvj = 175 °C **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>1 1<br>0.1 0.1<br>0.01 0.01<br>0 10 20 30 40 50 60 70 80 90 100 0 15 30 45 60 75 90 105 120 135 150<br>Switching times (typical), IGBT, Inverter Voltage slope (typical), IGBT, Inverter<br>t = f(RG) dv/dt = f(RG)<br>VGE = ±15 V, IC = 75 A, VCC = 900 V, Tvj = 175 °C VGE = ±15 V, IC = 75 A, VCC = 900 V, Tvj = 25 °C<br>10 20<br>15<br>1<br>10<br>0.1<br>5<br>0.01 0<br>1 10 100 1 10 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-16 9 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **6 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, Inverter** ## E = f(IC) RGoff = 6.8 Ω, RGon = 2.7 Ω, VGE = ±15 V, VCC = 900 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 15 30 45 60 75 90 105 120 135 150<br>**----- End of picture text -----**<br> ## **Reverse bias safe operating area (RBSOA), IGBT, Inverter** ## **Switching losses (typical), IGBT, Inverter** E = f(RG) VGE = ±15 V, IC = 75 A, VCC = 900 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>1 10 100<br>**----- End of picture text -----**<br> **Transient thermal impedance, IGBT, Inverter** Zth = f(t) IC = f(VCE) RGoff = 6.8 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 200 400 600 800 1000 1200 1400 1600 1800<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-16 10 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Characteristics diagrams** ## **Forward characteristic (typical), Diode, Inverter** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>125<br>100<br>75<br>50<br>25<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br> ## **Switching losses (typical), Diode, Inverter** Erec = f(RG) IF = 75 A, VCC = 900 V ## **Switching losses (typical), Diode, Inverter** Erec = f(IF) RGon = 2.7 Ω, VCC = 900 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>15<br>10<br>5<br>0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> **Transient thermal impedance, Diode, Inverter** Zth = f(t) **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 20 1<br>15<br>10 0.1<br>5<br>0 0.01<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-16 11 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Characteristics diagrams** **==> picture [540 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> Forward characteristic (typical), Diode, Rectifier Transient thermal impedance, Diode, Rectifier<br>IF = f(VF) Zth = f(t)<br>350 1<br>300<br>250<br>200<br>0.1<br>150<br>100<br>50<br>0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0.01 0.1 1 10<br>Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-16 12 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Circuit diagram** **==> picture [541 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> 7 Circuit diagram<br>30,31,32 27,28,29<br>T1 D1 T3 D3<br>D5 D7 D9<br>10 14<br>18<br>1,2,3 4,5,6 7,8,9 11,12,13 15,16,17 NTC �<br>19<br>T2 T4<br>D8 D10 D6 D2 D4<br>23 21<br>33,34,35 24,25,26<br>22 20<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.00 2024-12-16 13 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **8 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **8 Package outlines** **==> picture [361 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>122 ` 0,5<br>B According to Application Note E<br>(28,75) j Ø0,3 A B C<br>25<br>Y<br>X<br>0<br>25<br>(28,75)<br>D ( n 5,5) j Ø0,3 A D E<br>110 ` 0,1 Distance of threaded holes in heatsink 2x<br>j Ø0,3 A B C<br>A<br>j 0,5 A<br>4x<br>c 0,3 CZ<br>j 1 A j 0,7 A<br>35x<br>according to screw head washer<br>according to screw head<br>29,21 29 28 27 26 25 24 23 22 21 20<br>28,75<br>25<br>13,349,53 3031 1918<br>5,72 32<br>0 17<br>1,91 16<br>13,345,729,53 333435 1514<br>25<br>28,75<br>29,21 1 2 3 4 5 6 7 8 9 10 11 12 13<br>Tolerance of PCB hole pattern j n 0,1<br>For PressFIT pin: Details about hole specification for contacts refer to AN2007-09<br>For Solderpin: Details about hole specification for contacts refer to AN2017-03<br>Dimensions according to ISO 14405 GG (Method of least squares (LSQ)).<br>Reference D and E defined with GG<br>ISO 8015 - Independency principle<br>120,8305<br>( n<br>5,5)<br>( n<br>5,5)<br>24,444°<br>55 (47,25) 0 (47,25) 55<br>0,5 0,5<br> ` `<br>62,5 62<br>0,1 Distance of threaded holes in heatsink<br> `<br>50<br>6,85<br>20,6 17<br>59,06 55 47,25 40,01 36,2 32,39 20,96 17,15 15,24 13,34 11,43 7,62 1,91 0 1,91 3,81 5,72 7,62 11,43 17,15 20,96 22,86 24,77 26,67 28,58 38,1 41,91 47,25 55 59,06<br>W00266649.00<br>**----- End of picture text -----**<br> ## **Figure 2** Datasheet Revision 1.00 2024-12-16 14 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Module label code** ## **9 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2024-12-16 15 **F4-75R17N3E7_B58 EconoPACK[™] 3 module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |1.00|2024-12-16|Final datasheet| Datasheet Revision 1.00 2024-12-16 16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2024-12-16 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABL666-001** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
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