Image not available
Illustrative purposes only
F475R12KS4BPSA1
IGBT Module, Four Pack, 100 A, 3.2 V, 500 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 2 Series
- IGBT Technology: IGBT 2 Fast
- IGBT Termination: Solder
- Power Dissipation: 500W
- IGBT Configuration: Four Pack
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 3.2V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 66.75 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
> IGBT-ModuleIGBT-modules F4-75R12KS4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>F4-75R12KS4<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:MK<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>75<br>100<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>500<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>3,20<br>3,85<br>3,75<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,5<br>5,5<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>5,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,30<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 7,5Ω<br>td on<br>0,12<br>0,13<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 7,5Ω<br>tr<br>0,05<br>0,06<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 7,5Ω<br>td off<br>0,31<br>0,36<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 7,5Ω<br>tf<br>0,02<br>0,03<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGon= 7,5Ω<br>Eon<br>9,00<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGoff= 7,5Ω<br>Eoff<br>3,80<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>450<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,25<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| |preparedby:MK|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.0| 1 > IGBT-ModuleIGBT-modules F4-75R12KS4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|2450<br>|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||2,00<br>1,70|2,55|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 1800 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||43,0<br>62,0||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 1800 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||4,50<br>13,0||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 1800 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||1,70<br>4,70||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,55|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�MK date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 2 IGBT-Module IGBT-modules ## F4-75R12KS4 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al203||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W| |Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|30<br>~~ee~~|||nH| |Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||2,20||mΩ| |Module lead resistance, terminals - chip||||||| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |Gewicht<br>Weight||G||180||g| 3 IGBT-Module IGBT-modules ## F4-75R12KS4 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>150 150<br>Tvj = 25°C VGE = 8V<br>135 (=| Tvj = 125°C ee [iee 135 ee VGE = 9V J<br>VGE = 10V<br>120 Ti t i yy} 120 | VVGEGE = 12V = 15V Li}VA<br>‘ y<br>VGE = 20V<br>pte : WAVA<br>105 A 105 F E<br>Ji: /o/<br>/ /\/<br>90 90<br>Pte Ae Er<br>75 75<br>60 PCE FET) 60 LEE eeees<br>45 SERRE eee 45 eee a e<br>/ y o a “<br>‘ ape<br>30 30<br>tia Ht gee<br>ERED rae<br>15 15<br>ERARR ZEReeee eeeeeees eee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =75 Ω ,R Goff =7.5 Ω ,V CE =600V<br>150 27<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 ( Tvj = 125°C SY 24 |e Eoff, Tvj = 125°C<br>120 “ TT | i tg | + oy<br>21<br>105<br>i 18 Ty] Tl OUT CU<br>90<br>15<br>75<br>12<br>60<br>9<br>45<br>6<br>30<br>es oe ears<br>15 3<br>0 0<br>eT TT) (4et ttt<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 4 IGBT-Module IGBT-modules ## F4-75R12KS4 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =75A,V CE =600V<br>35 1<br>— ET<br>Eon, Tvj = 125°C ZthJC : IGBT oe th<br>Eoff, Tvj = 125°C a a | |<br>30 — v4 Z aa | en |<br>y a a I<br>25 a ee stiiimmmani<br>20<br>0,1 FEZ<br>15 LLo7 a 2| |<br>| TTA TT TET TT<br>|<br>vA TAT<br>10 AN<br>5 4A || i: TEA 1 2 EINE 3 4<br>ri[K/W]: 0,0488 0,164264 0,013036 0,0239<br>τ i[s]: 0,009 0,045 0,073 0,229<br>PPE El0 le<br>0 0,01<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =7.5 Ω ,T vj =125°C<br>175 150<br>IC, Modul Tvj = 25°C<br>IC, Chip 135 Tvj = 125°C<br>150 FE]— | | Ee<br>120<br>PTT T U TTE<br>125 BERR RRREE ae<br>105<br>| Gee 7<br>90<br>pti / /<br>100<br>tt dy) AE<br>75<br>PCCEERCE FRA<br>75<br>60<br>Litt TPA<br>45<br>50 PEt TTT ALE<br>v4<br>30<br>Saeeee BRRRRnay anne<br>25<br>eu TA<br>15<br>0 0<br>fibertT<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules ## F4-75R12KS4 **==> picture [485 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon 5 Ω ,V CE =600V IF 76K CE = 600 V<br>6,0 6,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>[— ae<br>5,5 Se 5,5 [ eee<br>5,0 re 5,0 Pot P P<br>4,5 ee a [—] a ee 4,5 e ee eeeee<br>a )<br>4,0 4,0<br>3,5 PF iy tae| 3,5 NePPT N eee| yt<br>3,0 poy[| | 3,0 PoPTN<br>2,5 | fE | 2,5 po PPMN ~~ —<br>2,0 pf to | 2,0 PoEN<br>1,5 1,5<br>1,0 1,0<br>0,5 0,5<br>0,0 0,0<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC =f (t) R=f(T)<br>1 100000<br>a —E——__—__—__—_——<br>e ZthJC : Diode T — R — typ E————<br>a [J p<br>Pt es s e<br>aa ee ll es ee<br>ee ry.<br>ETN EHIME EHIME EPH 10000 Xp<br>| —————————<br>0,1 Al Se<br>PLE7 VE TT aNNX eee<br>ee a ll 1000 ————_————<br>Pa | || eer nnn Gn nTSSG<br>i: 1 2 3 4<br>ri[K/W]: 0,0297 0,2399 0,2153 0,0651<br>2 τ i[s]: 0,003 0,022 0,064 0,344 a<br>pT<br>0,01 TOO 100 Pt<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 6 **==> picture [313 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules F4-75R12KS4<br>**----- End of picture text -----**<br> **==> picture [86 x 38] intentionally omitted <==** **==> picture [477 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br> **==> picture [494 x 414] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�MK date�of�publication:�2013-10-03<br>approved�by:�RS revision:�2.0<br>**----- End of picture text -----**<br> 7 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> **==> picture [140 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> F4-75R12KS4<br>**----- End of picture text -----**<br> ## **Nutzungsbedingungen** ## application. 8
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →