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F475R06W1E3BOMA1
IGBT Module, Four Pack, 100 A, 1.45 V, 275 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:275W; Collector Emi; Available until stocks are exhausted
- SVHC: No SVHC (21-Jan-2025)
- Product Range: EasyPACK 1B
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 275W
- IGBT Configuration: Four Pack
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 100A
- Power Dissipation Pd: 275W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 29.27 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## F4-75R06W1E3
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J<br>VCES = 600V<br>IC nom = 75A / ICRM = 150A<br>**----- End of picture text -----**<br>
- Hilfsumrichter
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- USV-Systeme
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- CEsat
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- CEsat
- Al2O3 Substrat mit kleinem thermischen Widerstand
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- Lötverbindungstechnik
- Robuste Montage durch integrierte Befestigungsklammern
- Al2O3
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- Rugged mounting due to integrated mounting clamps
1
> IGBT-ModuleIGBT-modules F4-75R06W1E3
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,Wechselrichter�/�IGBT,Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F4-75R06W1E3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:3.0<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>75<br>100<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>275<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,60<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,145<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>tr<br>0,017<br>0,019<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>td off<br>0,20<br>0,22<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>tf<br>0,07<br>0,09<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 3600 A/µs (Tvj= 150°C)<br>RGon= 5,1Ω<br>Eon<br>0,40<br>0,45<br>0,55<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 4200 V/µs (Tvj= 150°C)<br>RGoff= 5,1Ω<br>Eoff<br>1,75<br>2,20<br>2,30<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>530<br>380<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,50<br>0,55<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,60<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
> IGBT-ModuleIGBT-modules F4-75R06W1E3
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|500<br>450<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||95,0<br>105<br>110||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,70<br>6,40<br>7,00||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,75||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,75|0,85|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,60||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�3.0
3
## Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules F4-75R06W1E3
**==> picture [86 x 38] intentionally omitted <==**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||8,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|
Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30 A rms per connector pin.
prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�3.0
4
IGBT-Module IGBT-modules
## F4-75R06W1E3
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 a . 150 a<br>Tvj = 25°C VGE = 19V<br>135 F Tvj = 125°C L ay 135 | VGE = 17V aly<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>120 ere | | | jy 120 | VGE = 11V peaar a|<br>VGE = 9V<br>105 105<br>S i e e s<br>Vx<br>90 90<br>PitttT faeTee E d ae| |<br>- /<br>75 75<br>v; “i /<br>60 BRRRRREeMelt TEP 60 ET Ayi,<br>45 Pete 45<br>it yer ipeer<br>POPPA) ee<br>30 30<br>BRR ARR Ane<br>15 15<br>7 f<br>poe ) TL<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =51 Ω ,R Goff =5.1 Ω ,V CE =300V<br>150 5,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Tvj = 125°C 4,5 Eoff, Tvj = 125°C<br>F Tvj = 150°C LO Po Eon, Tvj = 150°C e<br>Eoff, Tvj = 150°C<br>120 4,0<br>et E f eo<br>e e[Lf Z va<br>105 3,5<br>eet t ae ee eva<br>90 3,0<br>ee<br>eee eee Ae<br>75 2,5<br>ee<br>60 2,0<br>ae eee ae<br>ji) a<br>45 1,5<br>ee<br>30 1,0<br>oe ee vA = —I<br>Po ay “tebeod<br>15 0,5<br>pe 4 Lee<br>0 0,0<br>5 6 7 8 9 10 11 12 0 15 30 45 60 75 90 105 120 135 150<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## F4-75R06W1E3
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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =75A,V CE =300V<br>10,0 10 Y__{_{[{fii[{{{jfj_{[[ fT Pia ey<br>Eon, Tvj = 125°C ZthJH : IGBT<br>9,0 Eoff, Tvj = 125°C Rs |<br>Eon, Tvj = 150°C ee |<br>Eoff, Tvj = 150°C<br>8,0<br>COT [C] a [c] |<br>7,0<br>6,0 BRR7, WAa 1 ESeeCn eei eeeen e ee<br>5,0 A PTTCT<br>Pt A<br>4,0 | ft flee | fd ST<br>0,1<br>ee a ee ea<br>3,0 /LO |= Pt tt<br>2,0 P Liewb aay]= | | E|AE<br>i: 1 2 3 4<br>PTAA | | yl Ly CAM a / | TTee ri[K/W]: a 0,051 0,117 0,426 0,506<br>1,0 Pf TE} At τ i[s]: 0,0005 oo 0,005 0,05 0,2 l<br>0,0 0,01<br>0 5 10 15 20 25 30 35 40 45 50 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =+15V,R Goff =51 Ω ,T vj =150°C<br>175 Ld 150 4<br>IC, Modul Tvj = 25°C<br>IC, Chip 135 Tvj = 125°C U/<br>150 ae Tvj = 150°C eee<br>ee<br>120<br>125<br>105<br>90<br>100<br>75<br>75<br>60<br>pf} ity) pep py<br>ee 45 ee<br>50<br>30<br>25<br>15<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,5 1,0 1,5 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## F4-75R06W1E3
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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =5.1 Ω ,V CE =300V IF =75A,V CE =300V<br>3,5 2,5<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>3,0<br>2,0<br>2,5<br>2,0 | 1,5<br>| \ .<br>a a<br>1,5<br>1,0<br>1,0<br>Per BREE<br>0,5<br>TT | [i LTRS ete<br>0,5<br>0,0 0,0<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH = f (t) R=f(T)<br>10 100000<br>i ZthJH : Diode eo 1 Rtyp a<br>Ra er | jy<br>a ee ee | s e<br>PTE ETE TET a ee ee ee<br>PUI TERI TTT TTT TTT PF | ET<br>1 10000<br>eeMCI Mm2 m = KLNT<br>ee a<br>YT TT TT Ar ES NN se ee<br>a nD) a | | Ne ee ee<br>EN pot NE<br>PU PT CTT TTT TT Pot KR<br>UATE TIMELINE LE NE<br>0,1 1000<br>Seeeeee{ sce eS Eat aa<br>YT T7T TUT TTT TT NS<br>YA [TT] TT TT TT seee<br>PAL eae i: 1 2 eee 3 4 pot NT<br>ri[K/W]: 0,1 0,227 0,596 0,526<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,01 100<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
7
Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules F4-75R06W1E3
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Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>
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Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�3.0
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
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F4-75R06W1E3<br>**----- End of picture text -----**<br>
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Nutzungsbedingungen<br>**----- End of picture text -----**<br>
application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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