Image not available
Illustrative purposes only
F43L50R07W2H3FB11BPSA2
IGBT Module, Eight Pack, 50 A, 1.45 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK CoolSiC
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Eight Pack
- Transistor Mounting: Panel
- DC Collector Current: 50A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 47.93 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
- F4-3L50R07W2H3F_B11
- a ETE
J VCES = 650V IC nom = 50A / ICRM = 100A
- 3-Level-Applikationen
- Motorantriebe
-
- USV-Systeme
- 3-level-applications
-
-
-
-
-
-
-
-
-
-
- Al2O3 Substrat mit kleinem thermischen Widerstand
-
-
- Robuste Montage durch integrierte Befestigungsklammern
-
- Al2O3
-
-
- Rugged mounting due to integrated mounting clamps
**Digit**
Datasheet www.infineon.com
2017-03-31
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|650|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 25°C, Tvj max= 175°C|IC nom|50|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|100|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,45<br>1,60<br>1,70|1,80|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,80 mA, VCE= VGE, Tvj= 25°C|VGEth|5,00|5,80|6,50|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V|QG||0,50||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||3,10||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,095||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 650 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 16Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,037<br>0,037<br>0,037||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 16Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,042<br>0,044<br>0,047||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 16Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,255<br>0,28<br>0,28||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 16Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,058<br>0,064<br>0,066||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 50 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 1100 A/µs (Tvj= 150°C)<br>RGon= 16Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||0,96<br>1,20<br>1,25||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 50 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 16Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||1,20<br>1,60<br>1,70||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤6 µs,|ISC||330||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,40||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
2
V�3.1 2017-03-31
Datasheet
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|||V|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 1100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>26,0<br>28,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 1100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,20<br>2,10<br>2,50||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 1100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,22<br>0,45<br>0,53||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,60||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
3
V�3.1 2017-03-31
Datasheet
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,3-Level/IGBT,3-Level**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,3-Level/IGBT,3-Level**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|650|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 25°C, Tvj max= 175°C|IC nom|30|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|60|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,55<br>1,80<br>1,85|1,95|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,80 mA, VCE= VGE, Tvj= 25°C|VGEth|5,00|5,80|6,50|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V|QG||0,30||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||1,65||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,051||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 650 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,03<br>0,03<br>0,031||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,035<br>0,036<br>0,05||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,175<br>0,19<br>0,20||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,019<br>0,038<br>0,043||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 30 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 830 A/µs (Tvj= 150°C)<br>RGon= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||0,38<br>0,42<br>0,42||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 30 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 5400 V/µs (Tvj= 150°C)<br>RGoff= 20Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||0,42<br>0,64<br>0,71||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤5 µs,|ISC||160||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||2,15||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
V�3.1 2017-03-31
Datasheet
4
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�3-Level�/�Diode,�3-Level**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|4,50|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,60<br>1,65|1,85|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||6,30<br>6,80<br>6,90||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,22<br>0,37<br>0,40||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,01<br>0,01<br>0,01||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||3,92||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
V�3.1 2017-03-31
Datasheet
5
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,0<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||45||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin
6
V�3.1 2017-03-31
Datasheet
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
**==> picture [237 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>Tvj = 25°C<br>Tvj = 125°C<br>90 T vj = 150°C<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C
**==> picture [237 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>VGE = 19V<br>VGE = 17V<br>90 V GE = 15V<br>VGE = 13V<br>VGE = 11V<br>80 V GE = 9V<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0,0 1,0 2,0 3,0 4,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�16� Ω ,�RGoff�=�16� Ω ,�VCE�=�300�V
**==> picture [255 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>Tvj = 25°C<br>Tvj = 125°C<br>90 T vj = 150°C<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>5 6 7 8 9 10 11 12<br>VGE [V]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
**==> picture [219 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
4<br>Eon, Tvj = 125°C<br>Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>IC [A]<br>**----- End of picture text -----**<br>
V�3.1 2017-03-31
Datasheet
7
F4-3L50R07W2H3F_B11
**==> picture [485 x 309] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =50A,V CE =300V<br>10 10<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>9 E on , T vj = 150°C ‘ Se<br>Eoff, Tvj = 150°C<br>ASS<br>8<br>7<br>y, / 1 SN palleT<br>f Pt<br>6 y, HH<br>5<br>4<br>0,1<br>3<br>2<br>i: 1 2 3 4<br>1 ri[K/W]: 0,0275 0,133 0,2766 0,9627<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,01<br>0 Pt 20 40 ett 60 80 100 120 ey 140 160 0,001 a 0,01 To 0,1 1 | 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
IF =f(V F))
**==> picture [483 x 310] intentionally omitted <==**
**----- Start of picture text -----**<br>
F =f(V F)) Erec =fi(l F)<br>RGon = '6 Ω ,V CE =300V<br>60 0,8<br>Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 150°C<br>Tvj = 150°C<br>50<br>0,6<br>40<br>30 0,4<br>777.<br>/<br>/<br>20 /<br>/<br>0,2 /<br>/<br>10<br>el vAyy / /<br>0 0,0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 0 10 20 30 40 50 60<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
8
Datasheet
2017-03-31
F4-3L50R07W2H3F_B11
**==> picture [486 x 656] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f(R G) ZthJH =f (t)<br>IF =30A,V CE =300V<br>0,7 10 po—t TT<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 150°C<br>0,6<br>0,5 \<br>\ paeel| |<br>\<br>0,4 \<br>\<br>\ 1<br>0,3<br>N\ c<br>\ val<br>aN<br>aN aw S<br>0,2 q<br>0,1 i: 1 2 3 4<br>ri[K/W]: 0,1999 0,4286 0,8282 1,1437<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,1<br>0 20 40 60 80 100 120 140 160 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Ausgangskennlinie IGBT,3-Level (typisch) Ausgangskennlinienfeld IGBT,3-Level (typisch)<br>output characteristic IGBT,3-Level (typical) output characteristic IGBT,3-Level (typical)<br>IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>60 60<br>Tvj = 25°C VGE = 19 V<br>Tvj = 125°C VGE = 17 V //<br>Tvj = 150°C VGE = 15 V iI; _<br>VGE = 13 V I; ff —_<br>50 50 VGE = 11 V lf; <<br>VGE = 9 V<br>if : U7<br>iffIf;lip 7 OA<br>40 40<br>Ili 7<br>Ii /<br>30 30 He/; A /<br>iy<br>Wi<br>20 20<br>./AR4<br>/<br>10 10<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
9
Datasheet
2017-03-31
F4-3L50R07W2H3F_B11
**==> picture [485 x 656] intentionally omitted <==**
**----- Start of picture text -----**<br>
IC =f(V GE) Eon =f(l),E C off =fil C)<br>VCE =20V VGE =415V,R Gon =20 Ω ,R Goff =20 Ω ,V CE =300V<br>60 1,5<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>50<br>40 1,0<br>30<br>i<br>7<br>20 0,5<br>10<br>0 0,0<br>5 6 7 8 9 10 11 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br>Schaltverluste IGBT,3-Level (typisch) Transienter Warmewiderstand IGBT,3-Level<br>switching losses IGBT,3-Level (typical) transient thermal impedance IGBT,3-Level<br>Eon =f{(R),E G off =f(R G) ZthJH = f (t)<br>VGE =+15V,1 C =30A,V CE =300V<br>6 10<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>5<br>1<br>yy,ff eea<br>4<br>Pall<br>f aii Sati seit ati<br>3 0,1<br>Seer eet eee erties<br>PT<br>2 / aOoooh<br>0,01<br>wee a<br>veceeeepete a<br>1<br>i: 1 2 3 4<br>ri[K/W]: 0,0423 0,2043 0,4249 1,4785<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,001<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IC E [mJ]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
10
Datasheet
2017-03-31
F4-3L50R07W2H3F_B11
**==> picture [34 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
IF =f(V F))<br>**----- End of picture text -----**<br>
**==> picture [483 x 309] intentionally omitted <==**
**----- Start of picture text -----**<br>
F =f(V F)) Erec =fil F)<br>RGon =20 Ω ,V CE =300V<br>20 0,015<br>Tvj = 25 ° C Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 150°C<br>18 T vj = 150°C<br>16<br>14<br>//<br>0,010<br>12<br>10<br>8<br>0,005<br>6<br>4<br>2<br>J<br>ZY<br>0 0,000<br>0,0 0,5 1,0 1,5 2,0 2,5 0 2 4 6 8 10 12 14 16<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
**==> picture [489 x 310] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f(R G) ZthJH =f (t)<br>IF =8A,V CE =300V<br>0,015 10<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 150°C<br>aa a | ec |<br>0,010<br>1<br>0,005<br>i: 1 2 3 4<br>ri[K/W]: 0,5571 0,8925 1,594 0,8764<br>τ i[s]: 0,0008097 0,007084 0,05044 0,2351<br>0,000 0,1<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
11
Datasheet
2017-03-31
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T)
**==> picture [240 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
12
V�3.1 2017-03-31
Datasheet
F4-3L50R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Schaltplan�/�Circuit�diagram**
**==> picture [3 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>
## **Gehäuseabmessungen�/�Package�outlines**
**==> picture [41 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>
**==> picture [152 x 105] intentionally omitted <==**
13
V�3.1 2017-03-31
Datasheet
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →