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F4100R12KS4BOSA1
IGBT Module, Four Pack, 130 A, 3.2 V, 660 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Product Range: EconoPACK 3
- IGBT Technology: IGBT 2 Fast
- IGBT Termination: Press Fit
- Power Dissipation: 660W
- IGBT Configuration: Four Pack
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 130A
- Power Dissipation Pd: 660W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 130A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 3.2V
- Collector Emitter Saturation Voltage Vce(on): 3.2V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 134.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
> IGBT-ModuleIGBT-modules F4-100R12KS4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>F4-100R12KS4<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:MK<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>100<br>130<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>660<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>3,20<br>3,85<br>3,75<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 4,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,5<br>5,5<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,10<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,80<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,42<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 5,6Ω<br>td on<br>0,12<br>0,13<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 5,6Ω<br>tr<br>0,05<br>0,06<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 5,6Ω<br>td off<br>0,31<br>0,36<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 5,6Ω<br>tf<br>0,02<br>0,03<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGon= 5,6Ω<br>Eon<br>12,0<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGoff= 5,6Ω<br>Eoff<br>5,00<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,19<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| |preparedby:MK|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.1| 1 ## Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules F4-100R12KS4 **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|4300|||A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||2,00<br>1,70|2,55|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 2300 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||56,0<br>82,0||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 2300 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||6,00<br>17,0||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 2300 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||2,00<br>5,50||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,32|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�MK date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1 2 > IGBT-ModuleIGBT-modules F4-100R12KS4 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al203||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W| |Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|21<br>~~ee~~|||nH| |Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||2,60||mΩ| |Module lead resistance, terminals - chip||||||| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |Gewicht<br>Weight||G||300||g| 3 IGBT-Module IGBT-modules ## F4-100R12KS4 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>200 200<br>Tvj = 25°C VGE = 8V<br>180 Tvj = 125°C / 180 VGE = 9V J<br>(ee=| ee ee VGE = 10V ee<br>160 Ti t i yy} 160 | VVGEGE = 12V = 15V Li}VA<br>‘ y<br>VGE = 20V<br>140 pte A 140 F E<br>Ji: /o/<br>/ J\/<br>120 120<br>Pte Ae Er<br>100 100<br>80 PCE FET) 80 LEE eeees<br>60 SERRE , eee 60 eee VL,a e<br>’/ T, “ Ue<br>40 40<br>tia Ht geeUpatre<br>ERED rae<br>20 20<br>ERARR ZEReeee e eeeee s eee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [487 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =56 Ω ,R Goff =56 Ω ,V CE =600V<br>200 35<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 E Tvj = 125°C O] Eoff, Tvj = 125°C<br>30<br>_ |) IE /<br>160<br>25<br>140 ee ee ee e e<br>120<br>20<br>100<br>15<br>80<br>60<br>10<br>40<br>5<br>20<br>TE] er<br>0 0<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 4 IGBT-Module IGBT-modules ## F4-100R12KS4 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =100A,V CE =600V<br>50 a 1 ee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>45 EeL Eoff, Tvj = 125°C LY eee<br>40 PTT ].dst | tly LY ZI a| Titi TT<br>35 PT Tt tt | fry] 4 a a e ee ll<br>7 LUTCEI ETT<br>30<br>25 SERRE Zee 0,1 alll<br>20 PTT TtLZ |} yd dd FEEEeeEE EH $ -HH<br>15 Seva4 eee en)LT LTA LETT ETE ETT<br>10 SEZs tN TE EINE<br>i: 1 2 3 4<br>5 CCE PAT I r τ ii[K/W]: [s]: ET 0,0036 0,0000119 0,01097 0,00236 0,09564 0,026 T 0,07979 0,065<br>0 PEE; TEE 0,01 7 a<br>0 5 10 15 20 25 30 35 40 45 50 55 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ee V,R Goff =56 Ω ,T vj =125°C<br>220 Ld 200 | T<br>IC, Modul Tvj = 25°C<br>200 FmL I C , Chip ett) 180 f Tvj = 125°C e<br>180 (ene ee M T o tll)<br>i 160<br>160<br>140<br>140 Pet Et a<br>120<br>120 Pt | | etd<br>100<br>FEES] HH HLA<br>100<br>80<br>80 ee ae<br>60<br>60<br>es ee eee eee<br>[eee] 40 oY<br>40 eee [ee] Soeeeeaveneee<br>20 ee| | 20 EiaeeaveneeeePeer<br>0 PoE eee ee 0 oYTE<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules ## F4-100R12KS4 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon I! Ω ,V CE =600V IF = 100A, V CE = 600 V<br>7 7<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>6 —— ff 6 | Ss | [|<br>Liberty)Lay EN ULEE ELL<br>5 5<br>PLACE LEP<br>4 4<br>3 3<br>2 2<br>1 1<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 40 45 50 55<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>a or<br>e ZthJC : Diode T — R E typ —————<br>a pt<br>A DO<br>| ll es ee<br>SET I ry.<br>10000<br>MWri EIM XE<br>/) a<br>ES NN se ee<br>0,1<br>PT TTTPP CT aN\ eee<br>a | el 1000 ————_————<br>VU TL EE es ee ec<br>7 LL i: 1 2 3 4 co ) = ee<br>ri[K/W]: 0,00605 0,01817 0,16135 0,13443<br>CS τ i[s]: 0,0000119 0,00236 0,026 0,065 pot NT<br>0,01 Coon 100 Pt EE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 6 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules F4-100R12KS4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data Schaltplan�/�circuit_diagram_headline** J **Gehäuseabmessungen�/�package�outlines** **==> picture [494 x 411] intentionally omitted <==** prepared�by:�MK date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1 7 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## F4-100R12KS4 ## **Nutzungsbedingungen** ## application. 8
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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