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F3L75R12W1H3B27BOMA1
IGBT Module, Three level Inverter, 45 A, 1.45 V, 275 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 21Pins
- Product Range: EasyPACK 1B
- IGBT Technology: IGBT 3 High Speed
- IGBT Termination: Press Fit
- Power Dissipation: 275W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: Quad N Channel
- DC Collector Current: 45A
- Power Dissipation Pd: 275W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 45A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 17.55 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [4 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> VCES = 1200V IC nom = 75A / ICRM = 150A - 3-Level-Applikationen - - 3-level-applications - - - - - CEsat - - - - CEsat - - Al2O3 Substrat mit kleinem thermischen Widerstand - - - Robuste Montage durch integrierte Befestigungsklammern - - Al2O3 - - - Rugged mounting due to integrated mounting clamps **Digit** 1 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** |TechnischeInformation/TechnicalInformation<br>F3L75R12W1H3_B27<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.2<br>**IGBT,T1-T4/IGBT,T1-T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>ImplementierterKollektor-Strom<br>Implementedcollectorcurrent<br>ICN<br>75<br>A<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>275<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,55<br>1,60<br>1,70<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 2,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,00<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,57<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,40<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,235<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 6,8Ω<br>td on<br>0,03<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 6,8Ω<br>tr<br>0,01<br>0,012<br>0,012<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 6,8Ω<br>td off<br>0,25<br>0,32<br>0,34<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 6,8Ω<br>tf<br>0,025<br>0,04<br>0,045<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, di/dt = 2600 A/µs (Tvj= 150°C)<br>RGon= 6,8Ω<br>Eon<br>0,40<br>0,60<br>0,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, du/dt = 2400 V/µs (Tvj= 150°C)<br>RGoff= 6,8Ω<br>Eoff<br>1,05<br>1,60<br>1,75<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>270<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,500 0,550 K/W|| |preparedby:CM|dateofpublication:2016-04-04| |---|---| |approvedby:AKDA|revision:V3.2| 2 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,450||K/W| |---|---|---|---|---|---|---| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **Diode,�D1�/�D4�/�Diode,�D1�/�D4 Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>75,0|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,90<br>1,90|2,40|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||72,0<br>80,0<br>82,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,35<br>2,85<br>3,70||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,80<br>1,30<br>1,35||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,950|1,05|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,850||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�CM approved�by:�AKDA date�of�publication:�2016-04-04 revision:�V3.2 3 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** **IGBT,�T2�/�T3�/�IGBT,�T2�/�T3 Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>F3L75R12W1H3_B27<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.2<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>150<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,90<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 10Ω<br>td on<br>0,022<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGon= 10Ω<br>tr<br>0,01<br>0,012<br>0,012<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 10Ω<br>td off<br>0,16<br>0,18<br>0,185<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 400 V<br>VGE= 15 V<br>RGoff= 10Ω<br>tf<br>0,025<br>0,037<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, di/dt = 2600 A/µs (Tvj= 150°C)<br>RGon= 10Ω<br>Eon<br>0,34<br>0,50<br>0,53<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 400 V, LS= 40 nH<br>VGE= 15 V, du/dt = 4700 V/µs (Tvj= 150°C)<br>RGoff= 10Ω<br>Eoff<br>0,85<br>1,15<br>1,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,900<br>1,00<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,850<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 4 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�D2�/�D3�/�Diode,�D2�/�D3** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|130<br>115|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,35<br>1,30|1,65|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||42,0<br>48,0<br>50,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,80<br>2,40<br>2,60||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,45<br>0,65<br>0,73||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,00|1,20|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,700||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�CM date�of�publication:�2016-04-04 approved�by:�AKDA revision:�V3.2 5 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,0<br>|||kV| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||5,00<br>6,00||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N| |Gewicht<br>Weight||G||24||g| Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. prepared�by:�CM date�of�publication:�2016-04-04 approved�by:�AKDA revision:�V3.2 6 ## Technische�Information�/�Technical�Information ## IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinie�IGBT,�T1-T4�(typisch) output�characteristic�IGBT,�T1-T4�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,�T1-T4�(typisch) output�characteristic�IGBT,�T1-T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 60 60<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>50 50 VVGEGE = 13V = 11V<br>VGE = 9V<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,�T1-T4�(typisch) transfer�characteristic�IGBT,�T1-T4�(typical)** IC�=�f�(VGE) VCE�=�20�V **Schaltverluste�IGBT,�T1-T4�(typisch) switching�losses�IGBT,�T1-T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�6.8� Ω ,�RGoff�=�6.8� Ω ,�VCE�=�400�V **==> picture [485 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 60 3,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 2,5 Eoff, Tvj = 150°C<br>40 2,0<br>30 1,5<br>20 1,0<br>10 0,5<br>0 0,0<br>5 6 7 8 9 10 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.2<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 7 ## IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =30A,V CE =400V<br>4,0 10<br>Eon, Tvj = 125°C aEe Z thJH : IGBT<br>Eoff, Tvj = 125°C<br>Po<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>3,0<br>2,0 1<br>1,0<br>I Ser eeeatiiiee atime<br>i: 1 2 3 4<br>ri[K/W]: 0,032 0,062 0,312 0,543<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,1 vil HL<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Rickwarts-Arbeitsbereich IGBT, T1-T4 (RBSOA) Durchlasskennlinie der Diode, D1 / D4 (typisch)<br>reverse bias safe operating area IGBT, T1-T4 (RBSOA) forward characteristic of Diode, D1 / D4 (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =415V,R Goff =68 Ω ,T vj =150°C<br>70 50<br>= IICC, Modul, Chip | 45 TTTvjvvjj = 25°C = 12 = 150°C5°C }<br>60<br>40<br>50<br>35<br>30<br>40<br>25<br>30<br>20<br>15<br>20<br>10<br>10<br>5<br>n/a Fa<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 8 IGBT-Modul IGBT-Module ## F3L75R12W1H3_B27 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =10 Ω ,V CE =400V IF =30A,V CE =400V<br>2,0 1,6<br>1,8 EErecrec, T, Tvjvj = 125°C = 150°C EErecrec, T, Tvjvj = 125°C = 150°C<br>1,4<br>1,6<br>1,2<br>1,4<br>1,0<br>1,2<br>~<br> ~<br>1,0 0,8<br>0,8 -<br>0,6<br>0,6<br>0,4<br>0,4<br>0,2<br>0,2<br>| ;<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0 10 20 30 40 50 60 70 80 90 100<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, D1 / D4 Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>transient thermal impedance Diode, D1 / D4 output characteristic IGBT, T2 / T3 (typical)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =15V<br>10 60<br>aA Z thJH : Diode 54 eLL TTTvjvvjj = 25°C = 12 = 150°C5°C<br>48<br>42<br>36<br>1 30<br>Sri 24<br>/Zh /<br>aot ott<br>18<br>Ht f /<br>Al 12 A<br>VA iN ‘<br>i: 1 2 3 4<br>ri[K/W]: 0,15 0,323 0,739 0,588<br>τ i[s]: 0,0005 0,005 0,05 0,2 6<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VCE [V]<br>E [mJ] E [mJ]<br> [K/W]thJH [A]IC<br>Z<br>**----- End of picture text -----**<br> 9 ## Technische�Information�/�Technical�Information ## IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** **Ausgangskennlinienfeld�IGBT,�T2�/�T3�(typisch) output�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VCE) Tvj�=�150°C **Übertragungscharakteristik�IGBT,�T2�/�T3�(typisch) transfer�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VGE) VCE�=�20�V **==> picture [483 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 60 60<br>54 VVVGEGEGE = 19V = 17V = 15V 54 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>VGE = 13V<br>48 VVGEGE = 11V = 9V 48<br>42 42<br>36 36<br>30 30<br>24 24<br>18 18<br>12 12<br>6 6<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�10� Ω ,�RGoff�=�10� Ω ,�VCE�=�400�V **Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(RG),�Eoff�=�f�(RG) VGE�=�±15�V,�IC�=�30�A,�VCE�=�400�V **==> picture [487 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 2,5 4,0<br>Eon, Tvj = 125°C Eon, Tvj = 125°C<br>EEoffon, T, Tvjvj = 125°C = 150°C 3,5 EEoff on , T, Tvj vj = 125°C = 150°C<br>Eoff, Tvj = 150°C Eoff, Tvj = 150°C<br>2,0<br>3,0<br>2,5<br>1,5<br>2,0<br>1,0<br>1,5<br>1,0<br>0,5<br>0,5<br>0,0 0,0<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90 100<br>IC [A] RG [ Ω ]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.2<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> 10 IGBT-Modul IGBT-Module ## F3L75R12W1H3_B27 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =10 Ω ,T vj =150°C<br>10 Loytt ty 70<br>Z thJH : IGBT IC, Modul<br>IC, Chip<br>fT = |<br>60<br>50<br>40<br>1<br>30<br>20<br>i: 1 2 3 4 10<br>ri[K/W]: 0,142 0,309 0,719 0,58<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,1 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700<br>t [s] VCE [V]<br>Durchlasskennlinie der Diode, D2 / D3 (typisch) Schaltverluste Diode, D2 / D3 (typisch)<br>forward characteristic of Diode, D2 / D3 (typical) switching losses Diode, D2 / D3 (typical)<br>IF =f(V F) Erec =fil F)<br>RGon =6.8 Ω ,V CE =400V<br>60 1,00<br>55 Ee. T T Tvj vj vj = 25°C = 125°C = 150°C fF] / 0,90 aa EErecrec, T, Tvjvj = 125°C = 150°C<br>50<br>0,80<br>45<br>0,70<br>40 eeLi<br>/ ee<br>35 ee) 0,60<br>/ eee ;<br>30 0,50<br>/on (7<br>25<br>0,40<br>20<br>ee / 2 ee }<br>/Mi 0,30 y,<br>15<br>Pf<br>/<br>VA 0,20<br>10<br>5 0,10<br>ee) a<br>0 SS A 0,00<br>0,0 0,5 1,0 1,5 2,0 0 10 20 30 40 50 60<br>VF [V] IF [A]<br> [K/W]thJH [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br> 11 IGBT-Modul IGBT-Module ## F3L75R12W1H3_B27 ## **==> picture [485 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(R G) ZthJH =f (t)<br>IF =30A,V CE =400V<br>0,90 10<br>Erec, Tvj = 125°C IE Z thJH : Diode ee<br>Erec, Tvj = 150°C<br>0,80 = | PTanEe<br>\<br>0,70<br>\<br>\<br>0,60<br>\ 0<br>AS<br>0,50<br>1<br>0,40<br>Sena cotiimmetiiLbert | memati<br>0,30<br>0,20<br>i: 1 2 3 4<br>0,10 r τ ii[K/W]:[s]: 0,250,0005 0,30,005 0,50,05 0,650,2<br>0,00 0,1<br>0 10 20 30 40 50 60 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>Rtyp<br>————<br>10000<br>Ki EE |<br>————NO [oe]<br>1000 (aEeaaNeeee———oe<br>PN<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 12 ## Technische�Information�/�Technical�Information IGBT-Modul IGBT-Module F3L75R12W1H3_B27 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [192 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>Infineon<br>**----- End of picture text -----**<br> **==> picture [88 x 119] intentionally omitted <==** prepared�by:�CM approved�by:�AKDA date�of�publication:�2016-04-04 revision:�V3.2 13 **==> picture [61 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br> ## F3L75R12W1H3_B27 ## **Nutzungsbedingungen** ## **WARNHINWEIS** ## **WARNINGS** 14
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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